DE3271995D1 - Method of manufacturing a semiconductor device - Google Patents
Method of manufacturing a semiconductor deviceInfo
- Publication number
- DE3271995D1 DE3271995D1 DE8282302044T DE3271995T DE3271995D1 DE 3271995 D1 DE3271995 D1 DE 3271995D1 DE 8282302044 T DE8282302044 T DE 8282302044T DE 3271995 T DE3271995 T DE 3271995T DE 3271995 D1 DE3271995 D1 DE 3271995D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/131—Reactive ion etching rie
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/963—Removing process residues from vertical substrate surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6106981A JPS57176742A (en) | 1981-04-21 | 1981-04-21 | Semiconductor device and manufacture thereof |
JP56061066A JPS57176727A (en) | 1981-04-21 | 1981-04-21 | Forming method for pattern |
JP6106881A JPS57176769A (en) | 1981-04-21 | 1981-04-21 | Semiconductor device and manufacture thereof |
JP6106781A JPS57176745A (en) | 1981-04-21 | 1981-04-21 | Manufacture of multilayer wiring |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3271995D1 true DE3271995D1 (en) | 1986-08-21 |
Family
ID=27463992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282302044T Expired DE3271995D1 (en) | 1981-04-21 | 1982-04-21 | Method of manufacturing a semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4564997A (de) |
EP (1) | EP0063917B1 (de) |
CA (1) | CA1204883A (de) |
DE (1) | DE3271995D1 (de) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846193B2 (ja) * | 1980-07-15 | 1983-10-14 | 株式会社東芝 | 半導体装置 |
DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
US4508815A (en) * | 1983-11-03 | 1985-04-02 | Mostek Corporation | Recessed metallization |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US5780313A (en) | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
US4584761A (en) * | 1984-05-15 | 1986-04-29 | Digital Equipment Corporation | Integrated circuit chip processing techniques and integrated chip produced thereby |
US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
US5178904A (en) * | 1985-02-16 | 1993-01-12 | Canon Kabushiki Kaisha | Process for forming deposited film from a group II through group VI metal hydrocarbon compound |
US4726963A (en) * | 1985-02-19 | 1988-02-23 | Canon Kabushiki Kaisha | Process for forming deposited film |
JPS61223756A (ja) * | 1985-03-28 | 1986-10-04 | Canon Inc | 複写装置 |
US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
JP2537175B2 (ja) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | 機能性堆積膜の製造装置 |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6673722B1 (en) * | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US5512102A (en) * | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
JPH0647727B2 (ja) * | 1985-12-24 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
JPS62193147A (ja) * | 1986-02-19 | 1987-08-25 | Toshiba Corp | 半導体装置の製造方法 |
WO1987005441A1 (en) * | 1986-03-05 | 1987-09-11 | Sumitomo Electric Industries, Ltd. | Semiconductor device and a method of producing the same |
JPH0752772B2 (ja) * | 1986-11-22 | 1995-06-05 | ヤマハ株式会社 | 半導体装置の製法 |
KR880013424A (ko) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
US4944961A (en) * | 1988-08-05 | 1990-07-31 | Rensselaer Polytechnic Institute | Deposition of metals on stepped surfaces |
US4931132A (en) * | 1988-10-07 | 1990-06-05 | Bell Communications Research, Inc. | Optical control of deposition of crystal monolayers |
EP0364214B1 (de) * | 1988-10-11 | 1995-01-11 | Sony Corporation | Vorrichtungen zur Umwandlung von optischen Wellenlängen |
US5202286A (en) * | 1989-02-27 | 1993-04-13 | Mitsubishi Denki Kabushiki Kaisha | Method of forming three-dimensional features on substrates with adjacent insulating films |
JP2597703B2 (ja) * | 1989-02-27 | 1997-04-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5061838A (en) * | 1989-06-23 | 1991-10-29 | Massachusetts Institute Of Technology | Toroidal electron cyclotron resonance reactor |
JP2870054B2 (ja) * | 1989-10-25 | 1999-03-10 | ソニー株式会社 | 半導体装置の製造方法 |
JP3123061B2 (ja) * | 1990-06-13 | 2001-01-09 | ソニー株式会社 | バイアスecr―cvd法による埋め込み平坦化方法 |
KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
FR2675947A1 (fr) * | 1991-04-23 | 1992-10-30 | France Telecom | Procede de passivation locale d'un substrat par une couche de carbone amorphe hydrogene et procede de fabrication de transistors en couches minces sur ce substrat passive. |
KR0170456B1 (ko) * | 1993-07-16 | 1999-03-30 | 세끼사와 다까시 | 반도체 장치 및 그 제조방법 |
US5620909A (en) * | 1995-12-04 | 1997-04-15 | Lucent Technologies Inc. | Method of depositing thin passivating film on microminiature semiconductor devices |
US5707452A (en) * | 1996-07-08 | 1998-01-13 | Applied Microwave Plasma Concepts, Inc. | Coaxial microwave applicator for an electron cyclotron resonance plasma source |
US6362097B1 (en) * | 1998-07-14 | 2002-03-26 | Applied Komatsu Technlology, Inc. | Collimated sputtering of semiconductor and other films |
JP2001347499A (ja) * | 2000-06-05 | 2001-12-18 | Sony Corp | 微細装置の製造方法 |
US6784065B1 (en) | 2001-06-15 | 2004-08-31 | National Semiconductor Corporation | Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor |
US6649482B1 (en) * | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
US7087979B1 (en) | 2001-06-15 | 2006-08-08 | National Semiconductor Corporation | Bipolar transistor with an ultra small self-aligned polysilicon emitter |
AU2003237668A1 (en) | 2002-05-23 | 2003-12-12 | Schott Ag | Method for producing a component comprising a conductor structure that is suitable for use at high frequencies and corresponding component |
CN1656612A (zh) * | 2002-05-23 | 2005-08-17 | 肖特股份公司 | 用于高频的玻璃材料 |
US8399349B2 (en) * | 2006-04-18 | 2013-03-19 | Air Products And Chemicals, Inc. | Materials and methods of forming controlled void |
DE102007006640A1 (de) * | 2007-02-06 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Aufbringen einer Struktur auf ein Halbleiterbauelement |
DE102008044938B4 (de) | 2008-08-29 | 2013-10-10 | Schott Ag | Verfahren zur Terminierung von lichtleitenden Faserbündeln sowie Hülse mit einem Faserbündel |
US8076682B2 (en) * | 2009-07-21 | 2011-12-13 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
WO2011018110A1 (en) * | 2009-08-12 | 2011-02-17 | X-Fab Semiconductor Foundries Ag | Method of manufacturing an organic light emitting diode by lift-off |
TWI567759B (zh) * | 2013-12-27 | 2017-01-21 | Lg化學股份有限公司 | 導電膜及其製備方法 |
US10365564B2 (en) * | 2017-08-09 | 2019-07-30 | Saudi Arabian Oil Company | Calcite channel nanofluidics |
US10761428B2 (en) | 2018-08-28 | 2020-09-01 | Saudi Arabian Oil Company | Fabricating calcite nanofluidic channels |
US10926227B2 (en) * | 2018-12-03 | 2021-02-23 | Saudi Arabian Oil Company | Fabricating calcite nanofluidic channels |
CN109950196A (zh) * | 2019-03-13 | 2019-06-28 | 深圳大学 | 一种应用于场隔离的低温氧化隔离工艺 |
US11300554B2 (en) | 2020-01-14 | 2022-04-12 | Saudi Arabian Oil Company | Calcite channel structures with heterogeneous wettability |
US11454097B2 (en) | 2021-01-04 | 2022-09-27 | Saudi Arabian Oil Company | Artificial rain to enhance hydrocarbon recovery |
US11961702B2 (en) | 2021-12-09 | 2024-04-16 | Saudi Arabian Oil Company | Fabrication of in situ HR-LCTEM nanofluidic cell for nanobubble interactions during EOR processes in carbonate rocks |
US11787993B1 (en) | 2022-03-28 | 2023-10-17 | Saudi Arabian Oil Company | In-situ foamed gel for lost circulation |
US11913319B2 (en) | 2022-06-21 | 2024-02-27 | Saudi Arabian Oil Company | Sandstone stimulation |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3860783A (en) * | 1970-10-19 | 1975-01-14 | Bell Telephone Labor Inc | Ion etching through a pattern mask |
US3856588A (en) * | 1972-10-11 | 1974-12-24 | Matsushita Electric Ind Co Ltd | Stabilizing insulation for diffused group iii-v devices |
JPS4960870A (de) * | 1972-10-16 | 1974-06-13 | ||
FR2252638B1 (de) * | 1973-11-23 | 1978-08-04 | Commissariat Energie Atomique | |
US4004044A (en) * | 1975-05-09 | 1977-01-18 | International Business Machines Corporation | Method for forming patterned films utilizing a transparent lift-off mask |
US4035276A (en) * | 1976-04-29 | 1977-07-12 | Ibm Corporation | Making coplanar layers of thin films |
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
US4407851A (en) * | 1981-04-13 | 1983-10-04 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing semiconductor device |
JPS57210635A (en) * | 1981-06-19 | 1982-12-24 | Tokyo Daigaku | Manufacture of semiconductor device |
CA1200624A (en) * | 1981-08-10 | 1986-02-11 | Susumu Muramoto | Method for the manufacture of semiconductor device using refractory metal in a lift-off step |
US4419810A (en) * | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Self-aligned field effect transistor process |
JPS58132946A (ja) * | 1982-02-03 | 1983-08-08 | Toshiba Corp | 半導体装置の製造方法 |
JPH0635323B2 (ja) * | 1982-06-25 | 1994-05-11 | 株式会社日立製作所 | 表面処理方法 |
US4440804A (en) * | 1982-08-02 | 1984-04-03 | Fairchild Camera & Instrument Corporation | Lift-off process for fabricating self-aligned contacts |
-
1982
- 1982-04-16 US US06/369,235 patent/US4564997A/en not_active Expired - Lifetime
- 1982-04-20 CA CA000401294A patent/CA1204883A/en not_active Expired
- 1982-04-21 DE DE8282302044T patent/DE3271995D1/de not_active Expired
- 1982-04-21 EP EP82302044A patent/EP0063917B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0063917B1 (de) | 1986-07-16 |
CA1204883A (en) | 1986-05-20 |
US4564997A (en) | 1986-01-21 |
EP0063917A1 (de) | 1982-11-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: BENEDUM, U., DIPL.-CHEM.UNIV.DR.RER.NAT., PAT.-ANW., 81669 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |