DE3062660D1 - System for selecting word lines in a bipolar ram - Google Patents
System for selecting word lines in a bipolar ramInfo
- Publication number
- DE3062660D1 DE3062660D1 DE8080300458T DE3062660T DE3062660D1 DE 3062660 D1 DE3062660 D1 DE 3062660D1 DE 8080300458 T DE8080300458 T DE 8080300458T DE 3062660 T DE3062660 T DE 3062660T DE 3062660 D1 DE3062660 D1 DE 3062660D1
- Authority
- DE
- Germany
- Prior art keywords
- word lines
- selecting word
- bipolar ram
- bipolar
- ram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54023086A JPS5833634B2 (ja) | 1979-02-28 | 1979-02-28 | メモリセルアレイの駆動方式 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3062660D1 true DE3062660D1 (en) | 1983-05-19 |
Family
ID=12100607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080300458T Expired DE3062660D1 (en) | 1979-02-28 | 1980-02-18 | System for selecting word lines in a bipolar ram |
Country Status (4)
Country | Link |
---|---|
US (1) | US4348747A (de) |
EP (1) | EP0019988B1 (de) |
JP (1) | JPS5833634B2 (de) |
DE (1) | DE3062660D1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56112122A (en) * | 1980-02-08 | 1981-09-04 | Fujitsu Ltd | Decoder circuit |
JPS598913B2 (ja) * | 1980-04-01 | 1984-02-28 | 富士通株式会社 | 記憶装置 |
JPS6010400B2 (ja) * | 1980-10-09 | 1985-03-16 | 富士通株式会社 | 半導体集積回路装置 |
JPS5841597B2 (ja) * | 1980-12-24 | 1983-09-13 | 富士通株式会社 | 半導体メモリディスチャ−ジ回路 |
JPH0831278B2 (ja) * | 1981-03-09 | 1996-03-27 | 富士通株式会社 | メモリ回路 |
DE3227121A1 (de) * | 1982-07-20 | 1984-01-26 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung zum lesen bipolarer speicherzellen |
JPS6080195A (ja) * | 1983-10-07 | 1985-05-08 | Fujitsu Ltd | 半導体記憶装置 |
JPS60254484A (ja) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | 2段デコーダ回路 |
US4613774A (en) * | 1984-07-09 | 1986-09-23 | Advanced Micro Devices, Inc. | Unitary multiplexer-decoder circuit |
JPS61104394A (ja) * | 1984-10-22 | 1986-05-22 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS62202537A (ja) * | 1986-02-19 | 1987-09-07 | Hitachi Ltd | 半導体集積回路装置 |
JP2793296B2 (ja) * | 1989-11-10 | 1998-09-03 | 株式会社東芝 | 半導体装置 |
CA2042432A1 (en) * | 1990-05-31 | 1991-12-01 | Robert M. Reinschmidt | Memory selection circuit |
JP2754906B2 (ja) * | 1990-11-06 | 1998-05-20 | 日本電気株式会社 | 半導体集積回路 |
US5285118A (en) * | 1992-07-16 | 1994-02-08 | International Business Machines Corporation | Complementary current tree decoder |
US5276363A (en) * | 1992-08-13 | 1994-01-04 | International Business Machines Corporation | Zero power decoder/driver |
US6452858B1 (en) | 1999-11-05 | 2002-09-17 | Hitachi, Ltd. | Semiconductor device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1162109A (en) * | 1966-12-22 | 1969-08-20 | Ibm | Semi Conductor Data and Storage Devices and Data Stores Employing Such Devices |
US3541531A (en) * | 1967-02-07 | 1970-11-17 | Bell Telephone Labor Inc | Semiconductive memory array wherein operating power is supplied via information paths |
US3703709A (en) * | 1969-05-24 | 1972-11-21 | Nippon Electric Co | High speed associative memory circuits |
US3636377A (en) * | 1970-07-21 | 1972-01-18 | Semi Conductor Electronic Memo | Bipolar semiconductor random access memory |
US3703711A (en) * | 1971-01-04 | 1972-11-21 | Honeywell Inf Systems | Memory cell with voltage limiting at transistor control terminals |
US3736574A (en) * | 1971-12-30 | 1973-05-29 | Ibm | Pseudo-hierarchy memory system |
US3916394A (en) * | 1974-12-09 | 1975-10-28 | Honeywell Inf Systems | High-speed random access memory |
JPS5341968A (en) * | 1976-09-29 | 1978-04-15 | Hitachi Ltd | Semiconductor circuit |
JPS5375828A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | Semiconductor circuit |
DE2658523A1 (de) * | 1976-12-23 | 1978-06-29 | Siemens Ag | Halbleiterspeicher |
DE2740565B1 (de) * | 1977-09-08 | 1978-10-19 | Siemens Ag | Schreib-Lese-Ansteueranordnung fuer einen Bipolarhalbleiterspeicher |
US4172291A (en) * | 1978-08-07 | 1979-10-23 | Fairchild Camera And Instrument Corp. | Preset circuit for information storage devices |
-
1979
- 1979-02-28 JP JP54023086A patent/JPS5833634B2/ja not_active Expired
-
1980
- 1980-02-18 EP EP80300458A patent/EP0019988B1/de not_active Expired
- 1980-02-18 DE DE8080300458T patent/DE3062660D1/de not_active Expired
- 1980-02-22 US US06/123,643 patent/US4348747A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5833634B2 (ja) | 1983-07-21 |
EP0019988B1 (de) | 1983-04-13 |
JPS55117789A (en) | 1980-09-10 |
EP0019988A1 (de) | 1980-12-10 |
US4348747A (en) | 1982-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |