DE2643987A1 - N-kanal-speicher-fet - Google Patents
N-kanal-speicher-fetInfo
- Publication number
- DE2643987A1 DE2643987A1 DE19762643987 DE2643987A DE2643987A1 DE 2643987 A1 DE2643987 A1 DE 2643987A1 DE 19762643987 DE19762643987 DE 19762643987 DE 2643987 A DE2643987 A DE 2643987A DE 2643987 A1 DE2643987 A1 DE 2643987A1
- Authority
- DE
- Germany
- Prior art keywords
- channel
- memory
- gate
- memory gate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000003860 storage Methods 0.000 title claims abstract description 25
- 239000012212 insulator Substances 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 230000005684 electric field Effects 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 238000012546 transfer Methods 0.000 claims description 39
- 230000002401 inhibitory effect Effects 0.000 claims description 5
- 230000001133 acceleration Effects 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 abstract description 2
- 230000005669 field effect Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 description 35
- 230000000694 effects Effects 0.000 description 20
- 239000000758 substrate Substances 0.000 description 16
- 238000012217 deletion Methods 0.000 description 12
- 230000037430 deletion Effects 0.000 description 12
- 210000004027 cell Anatomy 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000012549 training Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 231100000572 poisoning Toxicity 0.000 description 4
- 230000000607 poisoning effect Effects 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Description
10
P 26 13 895.4-33 = VPA 76 P 6O9I BRD.
Claims (5)
- - 3βΤ- 7SP 6 2 5 7 BRDPatentansprücheΛ») n-Kanal-Speicher-FET mit wenigsten einem Gate, nämlich mit einem allseitig von einem Isolator umgebenen floatenden Speichergate, bei dem zur Umladung des Speichergate die Elektronen injizierende Kanalinjektion - das heißt Umladung durch im eigenen leitenden Kanal stark beschleunigte und hierdurch aufgeheizte Elektronen, die wegen ihrer Aufheizung durch ein in Source-Drain-Richtung wirkendes elektrisches Feld die Energieschwelle zum Leitfähigkeitsband des Isolators überwinden und dadurch zum Speichergate gelangen - ausgenutzt wird,wobei die Kanalinjektion zum Programmieren, also Aufladen des Speichergate ausgenutzt wird, so daß das Speichergate nach dieser Aufladung mittels seiner negativen Ladung durch Influenz in den Source-Drain-Strom hemmender Weise auf die Source-Drain-Strecke einwirkt,wobei ein zusätzliches, einen Anschluß aufweisendes, steuerbares Steuergate vorgesehen ist, das kapazitiv auf das Speichergate wirkt,wobei das Speichergate leitend mit einem leitenden Lappen, über den beim elektrisch gesteuerten Löschen die Entladung des Speichergate erfolgt, verbunden ist, wobei der Lappen zumindest einen Teil eines zur Entladung des Speichergate dienendem Halbleiterbereiches bedeckt und wobei der Lappen von] durch ihn bedeckten Halbleiterbereich durch eine dünne Isolatorschicht getrennt ist, nach Anmeldung P 24 45 137.4-33, insbesondere für Programmspeicher eines Fernsprech-Vermittlungssystems, dadurch gekennzeichnet ,daß der Halbleiterbereich (BX) durch einen von den beiden Hauptstrecken-Anschlußbereichen (S,D) isolierten Umladebereich (BX) gebildet wird.809813/0602ORIGINAL INSPECTED* 76 P 6 2 5 7 BRQ
- 2. n-Kanal-Speicher-FET nach Anspruch 1, dadurch gekennzeichnet,daß die Isolatorschicht, die den Lappen (L) vom durch ihn
bedeckten Umladebereich (BX) trennt, dünner ist als die das Speichergate (G1) vom Kambereich (K) trennende Isolatorschicht. - 3. n-Kanal-Speicher-FET nach Anspruch 1 oder 2, dadurch gekennzeichnet,daß das Speichergate (G1) nur einen ersten Teil des Kanalbereiches (K1) bedeckt und daß der zweite Teil des Kanalbereiches (K) zwar vom Steuergate (G2, G2')> aber nicht vom Speichergate (G1) bedeckt wird.
- 4. n-Kanal-Speieher-FET nach Anspruch 1 oder 2, dadurch gekennzeichnet ,daß das Speichergate (G1) den Kanalbereich (K) längs seiner gesamten Länge zwischen Source (S) und Drain (D) bedeckt.
- 5. n-Kanal-Speicher-FET nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet,daß sein Kanalbereich (K) zumindest angenähert trapezförmig ist und daß die Schmalseite (V, Fig. 2) des Trapezes an den Drain (D) angrenzt.80981 3/0602
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2445137A DE2445137C3 (de) | 1974-09-20 | 1974-09-20 | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
DE2643947A DE2643947C2 (de) | 1974-09-20 | 1976-09-29 | n-Kanal-Speicher-FET |
DE2643932A DE2643932C2 (de) | 1974-09-20 | 1976-09-29 | n-Kanal-Speicher-FET |
DE2643987A DE2643987C2 (de) | 1974-09-20 | 1976-09-29 | n-Kanal-Speicher-FET |
US05/834,425 US4148044A (en) | 1976-09-29 | 1977-09-19 | N-channel memory field effect transistor |
FR7729038A FR2366668A2 (fr) | 1976-09-29 | 1977-09-27 | Transistor a effet de champ de memorisation a canal n |
GB40244/77A GB1550784A (en) | 1976-09-29 | 1977-09-28 | Field-effedt transistors |
JP11728877A JPS5342686A (en) | 1976-09-29 | 1977-09-29 | Nnchannel fet memory |
FR7802924A FR2380639A2 (fr) | 1976-09-29 | 1978-02-02 | Transistor a effet de champ de memorisation a canal n |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2445137A DE2445137C3 (de) | 1974-09-20 | 1974-09-20 | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
DE2638730A DE2638730C2 (de) | 1974-09-20 | 1976-08-27 | n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET |
DE2643987A DE2643987C2 (de) | 1974-09-20 | 1976-09-29 | n-Kanal-Speicher-FET |
DE19772759039 DE2759039A1 (de) | 1974-09-20 | 1977-12-30 | N-kanal-speicher-fet |
DE2812049A DE2812049C2 (de) | 1974-09-20 | 1978-03-20 | n-Kanal-Speicher-FET |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2643987A1 true DE2643987A1 (de) | 1978-03-30 |
DE2643987C2 DE2643987C2 (de) | 1984-03-29 |
Family
ID=33102470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2643987A Expired DE2643987C2 (de) | 1974-09-20 | 1976-09-29 | n-Kanal-Speicher-FET |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2643987C2 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2828855A1 (de) * | 1978-06-30 | 1980-01-03 | Siemens Ag | Wortweise elektrisch umprogrammierbarer, nichtfluechtiger speicher |
DE2828836A1 (de) * | 1978-06-30 | 1980-01-03 | Siemens Ag | Wortweise elektrisch loeschbarer, nichtfluechtiger speicher |
DE3009719A1 (de) * | 1979-03-14 | 1980-09-25 | Centre Electron Horloger | Elektrisch loeschbares und wiederholt programmierbares speicherelement zum dauerhaften speichern |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2201028A1 (de) * | 1971-01-15 | 1972-08-31 | Intel Corp | Feldeffekt-Speicherelement |
DE2356275A1 (de) * | 1972-12-29 | 1974-07-04 | Ibm | Leistungsunabhaengiger halbleiterspeicher mit doppelgate-isolierschichtfeldeffekttransistoren |
LU72605A1 (de) * | 1974-09-20 | 1975-08-21 | ||
US3919711A (en) * | 1973-02-26 | 1975-11-11 | Intel Corp | Erasable floating gate device |
-
1976
- 1976-09-29 DE DE2643987A patent/DE2643987C2/de not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2201028A1 (de) * | 1971-01-15 | 1972-08-31 | Intel Corp | Feldeffekt-Speicherelement |
DE2356275A1 (de) * | 1972-12-29 | 1974-07-04 | Ibm | Leistungsunabhaengiger halbleiterspeicher mit doppelgate-isolierschichtfeldeffekttransistoren |
US3919711A (en) * | 1973-02-26 | 1975-11-11 | Intel Corp | Erasable floating gate device |
LU72605A1 (de) * | 1974-09-20 | 1975-08-21 |
Non-Patent Citations (7)
Title |
---|
JP-Z: Japanese J. Appl.Phys., Bd. 13, Nr.9, Sept. 1974, S. 1414-1426 * |
JP-Z: Proceedings of the 4th Conference on Solid-State Devices, Tokyo 1972, Supplement of the Journal of the Japan Society of Applied Physics, Vol. 42, S. 158-166 * |
US-Z: 11th Annual Proceedings Reliability Physics, 1973, S. 163-169 * |
US-Z: IBM Technical Disclosure Bulletin, Bd. 17, Nr. 8, Jan. 1975, S. 2266 * |
US-Z: IEEE Journal of Solid-State Circuits, Vol. SC-7, 1972, S. 369-375 * |
US-Z: Journal of Applied Physics, Bd. 40, 1969, S. 278-283 * |
US-Z: Journal of the Electrochemical Society, Bd. 119, 1972, S. 597-603 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2828855A1 (de) * | 1978-06-30 | 1980-01-03 | Siemens Ag | Wortweise elektrisch umprogrammierbarer, nichtfluechtiger speicher |
DE2828836A1 (de) * | 1978-06-30 | 1980-01-03 | Siemens Ag | Wortweise elektrisch loeschbarer, nichtfluechtiger speicher |
DE3009719A1 (de) * | 1979-03-14 | 1980-09-25 | Centre Electron Horloger | Elektrisch loeschbares und wiederholt programmierbares speicherelement zum dauerhaften speichern |
Also Published As
Publication number | Publication date |
---|---|
DE2643987C2 (de) | 1984-03-29 |
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