DE2418662A1 - Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrate - Google Patents

Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrate

Info

Publication number
DE2418662A1
DE2418662A1 DE2418662A DE2418662A DE2418662A1 DE 2418662 A1 DE2418662 A1 DE 2418662A1 DE 2418662 A DE2418662 A DE 2418662A DE 2418662 A DE2418662 A DE 2418662A DE 2418662 A1 DE2418662 A1 DE 2418662A1
Authority
DE
Germany
Prior art keywords
substrates
substrate
space
gas mixture
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2418662A
Other languages
German (de)
English (en)
Inventor
Pierre Pinchon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2418662A1 publication Critical patent/DE2418662A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2418662A 1973-04-27 1974-04-18 Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrate Pending DE2418662A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7315461A FR2227640B1 (ja) 1973-04-27 1973-04-27

Publications (1)

Publication Number Publication Date
DE2418662A1 true DE2418662A1 (de) 1974-11-21

Family

ID=9118616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2418662A Pending DE2418662A1 (de) 1973-04-27 1974-04-18 Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrate

Country Status (9)

Country Link
US (1) US3922467A (ja)
JP (1) JPS5314464B2 (ja)
AU (1) AU6831374A (ja)
BE (1) BE814192A (ja)
DE (1) DE2418662A1 (ja)
FR (1) FR2227640B1 (ja)
GB (1) GB1460758A (ja)
IT (1) IT1010097B (ja)
NL (1) NL7405442A (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
US4279947A (en) * 1975-11-25 1981-07-21 Motorola, Inc. Deposition of silicon nitride
US4179326A (en) * 1976-04-22 1979-12-18 Fujitsu Limited Process for the vapor growth of a thin film
FR2354810A1 (fr) * 1976-06-14 1978-01-13 Anvar Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
JPS53126271A (en) * 1977-04-11 1978-11-04 Kokusai Electric Co Ltd Reduced pressure gaseous growing method and boarding jig
US4225647B1 (en) * 1977-12-02 1995-05-09 Richard A Parent Articles having thin, continuous, impervious coatings
US4220116A (en) * 1978-10-30 1980-09-02 Burroughs Corporation Reactant gas flow structure for a low pressure chemical vapor deposition system
NL7812388A (nl) * 1978-12-21 1980-06-24 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4401689A (en) * 1980-01-31 1983-08-30 Rca Corporation Radiation heated reactor process for chemical vapor deposition on substrates
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
US4355974A (en) * 1980-11-24 1982-10-26 Asq Boats, Inc. Wafer boat
KR830002904Y1 (ko) * 1982-06-16 1983-12-13 채이순 차수용(遵水用)매드
US4574093A (en) * 1983-12-30 1986-03-04 At&T Bell Laboratories Deposition technique
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor
JPS6223983A (ja) * 1985-07-25 1987-01-31 Anelva Corp 真空化学反応装置
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
FR2604297B1 (fr) * 1986-09-19 1989-03-10 Pauleau Yves Reacteur de depot de silicium dope
JPS63162862U (ja) * 1988-03-16 1988-10-24
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
KR20040047874A (ko) * 2001-09-29 2004-06-05 크리, 인코포레이티드 반전(反轉)된 화학 증착(ｃｖｄ)용 장치
JP2012004408A (ja) * 2010-06-18 2012-01-05 Tokyo Electron Ltd 支持体構造及び処理装置
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置
JP2015185750A (ja) * 2014-03-25 2015-10-22 東京エレクトロン株式会社 真空処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
US3816166A (en) * 1970-03-11 1974-06-11 Philips Corp Vapor depositing method
US3678893A (en) * 1970-05-01 1972-07-25 Stewart Warner Corp Improved device for supporting semiconductor wafers

Also Published As

Publication number Publication date
JPS5016476A (ja) 1975-02-21
US3922467A (en) 1975-11-25
BE814192A (fr) 1974-10-25
FR2227640B1 (ja) 1977-12-30
GB1460758A (en) 1977-01-06
IT1010097B (it) 1977-01-10
FR2227640A1 (ja) 1974-11-22
NL7405442A (ja) 1974-10-29
JPS5314464B2 (ja) 1978-05-17
AU6831374A (en) 1975-10-30

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