DE2060651A1 - Verfahren zum Herstellen von rohrfoermigen Koerpern aus Halbleitermaterial - Google Patents

Verfahren zum Herstellen von rohrfoermigen Koerpern aus Halbleitermaterial

Info

Publication number
DE2060651A1
DE2060651A1 DE19702060651 DE2060651A DE2060651A1 DE 2060651 A1 DE2060651 A1 DE 2060651A1 DE 19702060651 DE19702060651 DE 19702060651 DE 2060651 A DE2060651 A DE 2060651A DE 2060651 A1 DE2060651 A1 DE 2060651A1
Authority
DE
Germany
Prior art keywords
carrier
tubular
annular
semiconductor
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702060651
Other languages
German (de)
English (en)
Inventor
Wolfgang Dr Dietze
Andreas Kasper
Konrad Dr Reuschel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19702060651 priority Critical patent/DE2060651A1/de
Priority to NL7112809A priority patent/NL7112809A/xx
Priority to GB5567971A priority patent/GB1337687A/en
Priority to FR7143208A priority patent/FR2117271A5/fr
Priority to IT3201971A priority patent/IT943708B/it
Priority to JP9913771A priority patent/JPS5240829B1/ja
Priority to BE776465A priority patent/BE776465A/fr
Publication of DE2060651A1 publication Critical patent/DE2060651A1/de
Priority to US05/417,380 priority patent/US3979490A/en
Priority to US05/658,892 priority patent/US4015922A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
DE19702060651 1970-12-09 1970-12-09 Verfahren zum Herstellen von rohrfoermigen Koerpern aus Halbleitermaterial Pending DE2060651A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE19702060651 DE2060651A1 (de) 1970-12-09 1970-12-09 Verfahren zum Herstellen von rohrfoermigen Koerpern aus Halbleitermaterial
NL7112809A NL7112809A (fr) 1970-12-09 1971-09-17
GB5567971A GB1337687A (en) 1970-12-09 1971-12-01 Production of tubular bodies of semiconductor material
FR7143208A FR2117271A5 (fr) 1970-12-09 1971-12-02
IT3201971A IT943708B (it) 1970-12-09 1971-12-03 Processo per la preparazione di corpi di forma tubolare costitui ti da un materiale semiconduttore
JP9913771A JPS5240829B1 (fr) 1970-12-09 1971-12-09
BE776465A BE776465A (fr) 1970-12-09 1971-12-09 Procede de fabrication de corps tubulaires en matiere semi-conductrice et installation pour sa mise en oeuvre
US05/417,380 US3979490A (en) 1970-12-09 1973-11-19 Method for the manufacture of tubular bodies of semiconductor material
US05/658,892 US4015922A (en) 1970-12-09 1976-02-18 Apparatus for the manufacture of tubular bodies of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702060651 DE2060651A1 (de) 1970-12-09 1970-12-09 Verfahren zum Herstellen von rohrfoermigen Koerpern aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
DE2060651A1 true DE2060651A1 (de) 1972-06-29

Family

ID=5790480

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702060651 Pending DE2060651A1 (de) 1970-12-09 1970-12-09 Verfahren zum Herstellen von rohrfoermigen Koerpern aus Halbleitermaterial

Country Status (7)

Country Link
JP (1) JPS5240829B1 (fr)
BE (1) BE776465A (fr)
DE (1) DE2060651A1 (fr)
FR (1) FR2117271A5 (fr)
GB (1) GB1337687A (fr)
IT (1) IT943708B (fr)
NL (1) NL7112809A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60185931U (ja) * 1984-05-18 1985-12-10 株式会社　オ−シマ ボツクス型学習机

Also Published As

Publication number Publication date
GB1337687A (en) 1973-11-21
BE776465A (fr) 1972-04-04
FR2117271A5 (fr) 1972-07-21
NL7112809A (fr) 1972-06-13
IT943708B (it) 1973-04-10
JPS5240829B1 (fr) 1977-10-14

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