BE776465A - Procede de fabrication de corps tubulaires en matiere semi-conductrice et installation pour sa mise en oeuvre - Google Patents

Procede de fabrication de corps tubulaires en matiere semi-conductrice et installation pour sa mise en oeuvre

Info

Publication number
BE776465A
BE776465A BE776465A BE776465A BE776465A BE 776465 A BE776465 A BE 776465A BE 776465 A BE776465 A BE 776465A BE 776465 A BE776465 A BE 776465A BE 776465 A BE776465 A BE 776465A
Authority
BE
Belgium
Prior art keywords
implementation
installation
semiconductor material
tubular bodies
manufacturing tubular
Prior art date
Application number
BE776465A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE776465A publication Critical patent/BE776465A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
BE776465A 1970-12-09 1971-12-09 Procede de fabrication de corps tubulaires en matiere semi-conductrice et installation pour sa mise en oeuvre BE776465A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702060651 DE2060651A1 (de) 1970-12-09 1970-12-09 Verfahren zum Herstellen von rohrfoermigen Koerpern aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
BE776465A true BE776465A (fr) 1972-04-04

Family

ID=5790480

Family Applications (1)

Application Number Title Priority Date Filing Date
BE776465A BE776465A (fr) 1970-12-09 1971-12-09 Procede de fabrication de corps tubulaires en matiere semi-conductrice et installation pour sa mise en oeuvre

Country Status (7)

Country Link
JP (1) JPS5240829B1 (fr)
BE (1) BE776465A (fr)
DE (1) DE2060651A1 (fr)
FR (1) FR2117271A5 (fr)
GB (1) GB1337687A (fr)
IT (1) IT943708B (fr)
NL (1) NL7112809A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60185931U (ja) * 1984-05-18 1985-12-10 株式会社　オ−シマ ボツクス型学習机

Also Published As

Publication number Publication date
NL7112809A (fr) 1972-06-13
JPS5240829B1 (fr) 1977-10-14
DE2060651A1 (de) 1972-06-29
GB1337687A (en) 1973-11-21
IT943708B (it) 1973-04-10
FR2117271A5 (fr) 1972-07-21

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