GB1337687A - Production of tubular bodies of semiconductor material - Google Patents

Production of tubular bodies of semiconductor material

Info

Publication number
GB1337687A
GB1337687A GB5567971A GB5567971A GB1337687A GB 1337687 A GB1337687 A GB 1337687A GB 5567971 A GB5567971 A GB 5567971A GB 5567971 A GB5567971 A GB 5567971A GB 1337687 A GB1337687 A GB 1337687A
Authority
GB
United Kingdom
Prior art keywords
carrier
tubular body
annular
semi
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5567971A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1337687A publication Critical patent/GB1337687A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

1337687 Silicon SIEMENS AG 1 Dec 1971 [9 Dec 1970] 55679/71 Heading C1A A tubular body of semi-conductor material, e.g. silicon, is produced by heating a rod-shaped or tubular body of carbon in a reaction gas which will deposit the said semi-conductor on the carrier, and removing the carrier from the tubular body, at least one annular zone of the cylindrical surface of said carrier being heated to a temperature different from that of the remainder of said surface such that an annular thickening of the tubular body is produced at said annular part. The thickening may be located at one end of the tubular body or at an intended point of division of the tube intermediate its ends. The annular zone may be produced by a reduction of the wall thickness of the carrier, the outer diameter remaining constant as in Fig. 1. The carbon carrier 1 is connected electrically by a carbon or graphite bridge element 2 to an inner rod 3, the carrier 1 and rod 3 being connected to electrodes 7 and 6 respectively. Alternatively the carrier may be of constant wall thickness but the inner rod 3 may have a zone of reduced diameter. An insulating cooling gas may be passed along the annular space between the inner rod 3 and the carrier 1. The tube so-formed may, after removal of the carrier, be used as a treatment vessel for semi-conductor bodies, e.g. wafers, which may be placed inside the tube.
GB5567971A 1970-12-09 1971-12-01 Production of tubular bodies of semiconductor material Expired GB1337687A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702060651 DE2060651A1 (en) 1970-12-09 1970-12-09 Process for the production of tubular bodies from semiconductor material

Publications (1)

Publication Number Publication Date
GB1337687A true GB1337687A (en) 1973-11-21

Family

ID=5790480

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5567971A Expired GB1337687A (en) 1970-12-09 1971-12-01 Production of tubular bodies of semiconductor material

Country Status (7)

Country Link
JP (1) JPS5240829B1 (en)
BE (1) BE776465A (en)
DE (1) DE2060651A1 (en)
FR (1) FR2117271A5 (en)
GB (1) GB1337687A (en)
IT (1) IT943708B (en)
NL (1) NL7112809A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60185931U (en) * 1984-05-18 1985-12-10 株式会社　オ−シマ box type study desk

Also Published As

Publication number Publication date
NL7112809A (en) 1972-06-13
BE776465A (en) 1972-04-04
JPS5240829B1 (en) 1977-10-14
DE2060651A1 (en) 1972-06-29
IT943708B (en) 1973-04-10
FR2117271A5 (en) 1972-07-21

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee