DE19882202T1 - Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE19882202T1
DE19882202T1 DE19882202T DE19882202T DE19882202T1 DE 19882202 T1 DE19882202 T1 DE 19882202T1 DE 19882202 T DE19882202 T DE 19882202T DE 19882202 T DE19882202 T DE 19882202T DE 19882202 T1 DE19882202 T1 DE 19882202T1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
same
emitting device
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19882202T
Other languages
English (en)
Other versions
DE19882202B4 (de
Inventor
Masayuki Sonobe
Shunji Nakata
Tsuyoshi Tsutsui
Norikazu Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE19882202T1 publication Critical patent/DE19882202T1/de
Application granted granted Critical
Publication of DE19882202B4 publication Critical patent/DE19882202B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE19882202T 1998-01-21 1998-01-21 Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung Expired - Fee Related DE19882202B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/000251 WO1999038218A1 (fr) 1998-01-21 1998-01-21 Element luminescent a semiconducteur et procede de fabrication

Publications (2)

Publication Number Publication Date
DE19882202T1 true DE19882202T1 (de) 2000-04-13
DE19882202B4 DE19882202B4 (de) 2007-03-22

Family

ID=14207452

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19882202T Expired - Fee Related DE19882202B4 (de) 1998-01-21 1998-01-21 Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (1) US6191437B1 (de)
JP (1) JP3602856B2 (de)
KR (1) KR100542870B1 (de)
DE (1) DE19882202B4 (de)
WO (1) WO1999038218A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3609661B2 (ja) * 1999-08-19 2005-01-12 株式会社東芝 半導体発光素子
TW541710B (en) * 2001-06-27 2003-07-11 Epistar Corp LED having transparent substrate and the manufacturing method thereof
JP4015865B2 (ja) * 2002-03-22 2007-11-28 松下電器産業株式会社 半導体装置の製造方法
US7112825B2 (en) * 2002-07-11 2006-09-26 Rohm Co., Ltd. Semiconductor light emitting device
KR100497127B1 (ko) * 2002-09-05 2005-06-28 삼성전기주식회사 질화갈륨계 반도체 엘이디 소자
GB2395839A (en) * 2002-11-30 2004-06-02 Sharp Kk MBE growth of p-type nitride semiconductor materials
JP3767863B2 (ja) * 2003-12-18 2006-04-19 ローム株式会社 半導体発光素子およびその製法
US7804100B2 (en) * 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
JP4907121B2 (ja) * 2005-07-28 2012-03-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP4872450B2 (ja) * 2006-05-12 2012-02-08 日立電線株式会社 窒化物半導体発光素子
JP2007184644A (ja) * 2007-04-02 2007-07-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100864609B1 (ko) * 2007-07-04 2008-10-22 우리엘에스티 주식회사 화합물 반도체를 이용한 발광소자
EP2484816B1 (de) 2009-09-28 2015-03-11 Tokuyama Corporation Verfahren zur herstellung eines laminats
DE102011114670A1 (de) * 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102011114671A1 (de) 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP6331572B2 (ja) * 2014-03-28 2018-05-30 日亜化学工業株式会社 窒化物半導体素子の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2599088B2 (ja) * 1993-04-12 1997-04-09 信越半導体株式会社 ＧａＰ赤色発光素子基板及びその製造方法
US5693963A (en) * 1994-09-19 1997-12-02 Kabushiki Kaisha Toshiba Compound semiconductor device with nitride
WO1996011502A1 (en) * 1994-10-11 1996-04-18 International Business Machines Corporation WAVELENGTH TUNING OF GaN-BASED LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS AND DISPLAYS BY INTRODUCTION OF DEEP DONORS
JP3182346B2 (ja) * 1995-08-31 2001-07-03 株式会社東芝 青色発光素子及びその製造方法
JP3700872B2 (ja) * 1995-12-28 2005-09-28 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置およびその製造方法
JP3448450B2 (ja) * 1996-04-26 2003-09-22 三洋電機株式会社 発光素子およびその製造方法

Also Published As

Publication number Publication date
US6191437B1 (en) 2001-02-20
JP3602856B2 (ja) 2004-12-15
KR100542870B1 (ko) 2006-01-20
WO1999038218A1 (fr) 1999-07-29
KR20000076084A (ko) 2000-12-26
DE19882202B4 (de) 2007-03-22

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20110802