DE19606105A1 - Back-Source-MOSFET - Google Patents
Back-Source-MOSFETInfo
- Publication number
- DE19606105A1 DE19606105A1 DE19606105A DE19606105A DE19606105A1 DE 19606105 A1 DE19606105 A1 DE 19606105A1 DE 19606105 A DE19606105 A DE 19606105A DE 19606105 A DE19606105 A DE 19606105A DE 19606105 A1 DE19606105 A1 DE 19606105A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- source
- base layer
- drain
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000004020 conductor Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 60
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
Dadurch, daß bei dem Back-Source-MOSFET die Sourceelektrode und die Drainelektrode getrennt auf jeweiligen (insbes. gegenüberliegenden) Hauptflächen des Wafers angeordnet sind werden das Verdrahtungsmuster vereinfacht und der Verdrahtungswiderstand deutlich verrin gert. Indem dabei ferner die Sourcezone elektrisch mit dem Substrat verbunden wird und die Sourceelektrode an der Rückseite des Substrats angeordnet wird, wird das Substratpotential stabil, so daß keine Störung in einem Logikteil zu befürchten ist, das mit dem MOSFET als Leistungsteil in einem Leistungs-IC enthalten ist.
Claims (11)
ein Halbleitersubstrat (101; 201; 301; 401; 501; 601) eines ersten Leitungstyps (n),
eine auf einer ersten Fläche des Halbleitersubstrats ausgebildete Basisschicht (102; 202; 302; 402; 502; 602) eines zweiten Leitungstyps (p),
eine in der Basisschicht ausgebildete Sourcezone (104; 204; 304; 404; 504; 604) des ersten Leitungstyps, die mit dem Halbleitersubstrat verbunden ist,
eine in der Basisschicht ausgebildete Draindriftzone (105) des ersten Leitungstyps,
eine in der Draindriftzone ausgebildete Drainzone (106) des ersten Leitungstyps,
eine Gateelektrode (107), die unter Zwischenlage eines Gateisolierfilms (108) auf dem Abschnitt der Basisschicht ausgebildet ist, der sich zwischen der Sourcezone und der Draindrift zone erstreckt,
eine mit der Drainzone verbundene Drainelektrode (111, 211, 311, 411), und eine auf einer zweiten Fläche des Halbleitersubstrats ausgebildete, mit der Sourcezone verbundene Sourceelektrode (110; 210; 310; 410).
ein Halbleitersubstrat (701) eines ersten Leitungstyps (n),
eine auf einer ersten Fläche des Halbleitersubstrats ausgebildete Basisschicht (702) eines zweiten Leitungstyps (p),
eine auf der Basisschicht ausgebildete Draindriftzone (705) des ersten Leitungstyps,
eine auf der Draindriftzone ausgebildete Drainzone (706),
einen von der Oberfläche der Drainzone bis hin zum Halbleitersubstrat ausgebildeten Graben (713),
eine in dem Graben ausgebildete Gateelektrode (707), die unter Zwischenlage eines Gateoxidfilms (708) der zum Graben hin freiliegenden Oberfläche der Basisschicht (702) gegen überliegt,
eine auf einer zweiten Fläche des Halbleitersubstrats (701) ausgebildete Sourceelek trode (710), und
eine mit der Drainzone (706) verbundene Drainelektrode (711).
ein Halbleitersubstrat (801) eines ersten Leitungstyps (n), eine auf einer ersten Fläche des Halbleitersubstrats ausgebildete Basisschicht (820) des ersten Leitungstyps,
eine auf der Basisschicht ausgebildete Draindriftzone (805) des ersten Leitungstyps,
eine auf der Draindriftzone ausgebildete Drainzone (806), einen von der Oberfläche der Drainzone bis hin zum Halbleitersubstrat ausgebildeten Graben (813),
eine in dem Graben ausgebildete Gateelektrode (807), die unter Zwischenlage eines Gateoxidfilms (808) der zum Graben hin freiliegenden Oberfläche der Basisschicht (820) gegen überliegt,
eine auf einer zweiten Fläche des Halbleitersubstrats (801) ausgebildete Sourceelek trode (810), und
eine mit der Drainzone (806) verbundene Drainelektrode (811).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31284/95 | 1995-02-21 | ||
JP03128495A JP3291958B2 (ja) | 1995-02-21 | 1995-02-21 | バックソースmosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19606105A1 true DE19606105A1 (de) | 1996-08-22 |
DE19606105B4 DE19606105B4 (de) | 2006-08-24 |
Family
ID=12327023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19606105A Expired - Fee Related DE19606105B4 (de) | 1995-02-21 | 1996-02-19 | Back-Source-MOSFET |
Country Status (3)
Country | Link |
---|---|
US (1) | US5760440A (de) |
JP (1) | JP3291958B2 (de) |
DE (1) | DE19606105B4 (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0833392A2 (de) * | 1996-09-19 | 1998-04-01 | Siemens Aktiengesellschaft | Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement |
WO1999036964A1 (de) * | 1998-01-15 | 1999-07-22 | Siemens Aktiengesellschaft | Fet mit source-substratanschluss |
DE102004024885A1 (de) * | 2004-05-19 | 2005-12-22 | Infineon Technologies Ag | Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102004041198A1 (de) * | 2004-08-25 | 2006-03-02 | Infineon Technologies Austria Ag | Entladestruktur und Eckstruktur für ein laterales Halbleiterbauelement mit einer Feldelektrode |
DE19801095B4 (de) * | 1998-01-14 | 2007-12-13 | Infineon Technologies Ag | Leistungs-MOSFET |
DE10042226B4 (de) * | 2000-08-28 | 2014-12-24 | Infineon Technologies Ag | Source-Down-Leistungs-MOSFET und Verfahren zu dessen Herstellung |
US9852945B2 (en) | 2012-10-31 | 2017-12-26 | Infineon Technologies Austria Ag | Method of manufacturing a semiconductor device having a cell field portion and a contact area |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2764735B1 (fr) * | 1997-06-17 | 1999-08-27 | Sgs Thomson Microelectronics | Protection du caisson logique d'un composant incluant un transistor mos de puissance integre |
US6781804B1 (en) | 1997-06-17 | 2004-08-24 | Sgs-Thomson Microelectronics S.A. | Protection of the logic well of a component including an integrated MOS power transistor |
US6063678A (en) * | 1998-05-04 | 2000-05-16 | Xemod, Inc. | Fabrication of lateral RF MOS devices with enhanced RF properties |
DE19923522A1 (de) * | 1999-05-21 | 2000-11-30 | Siemens Ag | Source-Down-Leistungstransistor |
JP2001094094A (ja) | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
EP1187220A3 (de) | 2000-09-11 | 2007-10-10 | Kabushiki Kaisha Toshiba | MOS-Feldeffekttransistor mit reduziertem Anschaltwiderstand |
US6768171B2 (en) * | 2000-11-27 | 2004-07-27 | Power Integrations, Inc. | High-voltage transistor with JFET conduction channels |
US6552389B2 (en) | 2000-12-14 | 2003-04-22 | Kabushiki Kaisha Toshiba | Offset-gate-type semiconductor device |
JP2002270840A (ja) * | 2001-03-09 | 2002-09-20 | Toshiba Corp | パワーmosfet |
JP2002270830A (ja) * | 2001-03-12 | 2002-09-20 | Fuji Electric Co Ltd | 半導体装置 |
FR2826183A1 (fr) * | 2001-06-15 | 2002-12-20 | St Microelectronics Sa | Transistor mos de puissance lateral |
US7221011B2 (en) * | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
US7786533B2 (en) * | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
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US6555873B2 (en) * | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
US6635544B2 (en) * | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
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US6906380B1 (en) | 2004-05-13 | 2005-06-14 | Vishay-Siliconix | Drain side gate trench metal-oxide-semiconductor field effect transistor |
US8183629B2 (en) * | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
JP5021301B2 (ja) | 2004-08-17 | 2012-09-05 | ローム株式会社 | 半導体装置およびその製造方法 |
US7439580B2 (en) | 2004-09-02 | 2008-10-21 | International Rectifier Corporation | Top drain MOSgated device and process of manufacture therefor |
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DE102005030886B3 (de) * | 2005-07-01 | 2007-02-08 | Infineon Technologies Ag | Schaltungsanordnung mit einem Transistorbauelement und einem Freilaufelement |
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US8368126B2 (en) * | 2007-04-19 | 2013-02-05 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
JP5207666B2 (ja) * | 2007-06-11 | 2013-06-12 | ローム株式会社 | 半導体装置 |
JP5389339B2 (ja) * | 2007-06-06 | 2014-01-15 | ローム株式会社 | 半導体装置 |
JP2009170747A (ja) * | 2008-01-18 | 2009-07-30 | Toshiba Corp | 半導体装置及びその製造方法 |
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US8471331B2 (en) | 2011-08-15 | 2013-06-25 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device with source-substrate connection and structure |
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US9425304B2 (en) | 2014-08-21 | 2016-08-23 | Vishay-Siliconix | Transistor structure with improved unclamped inductive switching immunity |
US9431532B1 (en) * | 2015-02-13 | 2016-08-30 | PowerWyse, Inc. | System and method for fabricating high voltage power MOSFET |
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Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4738936A (en) * | 1983-07-01 | 1988-04-19 | Acrian, Inc. | Method of fabrication lateral FET structure having a substrate to source contact |
US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
JPH01147854A (ja) * | 1987-12-04 | 1989-06-09 | Nissan Motor Co Ltd | 半導体装置 |
US5023196A (en) * | 1990-01-29 | 1991-06-11 | Motorola Inc. | Method for forming a MOSFET with substrate source contact |
US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
US5155563A (en) * | 1991-03-18 | 1992-10-13 | Motorola, Inc. | Semiconductor device having low source inductance |
JPH0590579A (ja) * | 1991-09-30 | 1993-04-09 | Nec Kansai Ltd | パワー電界効果トランジスタ |
JPH05121739A (ja) * | 1991-10-25 | 1993-05-18 | Hitachi Ltd | 絶縁ゲート半導体装置 |
JPH07122749A (ja) * | 1993-09-01 | 1995-05-12 | Toshiba Corp | 半導体装置及びその製造方法 |
-
1995
- 1995-02-21 JP JP03128495A patent/JP3291958B2/ja not_active Expired - Lifetime
-
1996
- 1996-02-19 DE DE19606105A patent/DE19606105B4/de not_active Expired - Fee Related
- 1996-02-21 US US08/604,331 patent/US5760440A/en not_active Expired - Lifetime
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0833392A2 (de) * | 1996-09-19 | 1998-04-01 | Siemens Aktiengesellschaft | Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement |
EP0833392A3 (de) * | 1996-09-19 | 1998-10-21 | Siemens Aktiengesellschaft | Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement |
US6373097B1 (en) | 1996-09-19 | 2002-04-16 | Infineon Technologies Ag | Field-effect-controllable, vertical semiconductor component, and monolithically integrated half bridge |
DE19801095B4 (de) * | 1998-01-14 | 2007-12-13 | Infineon Technologies Ag | Leistungs-MOSFET |
WO1999036964A1 (de) * | 1998-01-15 | 1999-07-22 | Siemens Aktiengesellschaft | Fet mit source-substratanschluss |
DE10042226B4 (de) * | 2000-08-28 | 2014-12-24 | Infineon Technologies Ag | Source-Down-Leistungs-MOSFET und Verfahren zu dessen Herstellung |
DE102004024885A1 (de) * | 2004-05-19 | 2005-12-22 | Infineon Technologies Ag | Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102004024885B4 (de) * | 2004-05-19 | 2007-09-06 | Infineon Technologies Ag | Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102004041198A1 (de) * | 2004-08-25 | 2006-03-02 | Infineon Technologies Austria Ag | Entladestruktur und Eckstruktur für ein laterales Halbleiterbauelement mit einer Feldelektrode |
DE102004041198B4 (de) * | 2004-08-25 | 2016-06-09 | Infineon Technologies Austria Ag | Laterales Halbleiterbauelement mit einer Feldelektrode und einer Entladestruktur |
US9852945B2 (en) | 2012-10-31 | 2017-12-26 | Infineon Technologies Austria Ag | Method of manufacturing a semiconductor device having a cell field portion and a contact area |
DE102013112012B4 (de) | 2012-10-31 | 2023-06-15 | Infineon Technologies Austria Ag | Halbleitervorrichtungen und Verfahren zum Herstellen einer Halbleitervorrichtung |
Also Published As
Publication number | Publication date |
---|---|
JPH08227998A (ja) | 1996-09-03 |
JP3291958B2 (ja) | 2002-06-17 |
US5760440A (en) | 1998-06-02 |
DE19606105B4 (de) | 2006-08-24 |
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