DE1764251B2 - - Google Patents
Info
- Publication number
- DE1764251B2 DE1764251B2 DE1764251A DE1764251A DE1764251B2 DE 1764251 B2 DE1764251 B2 DE 1764251B2 DE 1764251 A DE1764251 A DE 1764251A DE 1764251 A DE1764251 A DE 1764251A DE 1764251 B2 DE1764251 B2 DE 1764251B2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
- G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- General Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electronic Switches (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1967D0054814 DE1589707B2 (de) | 1967-12-09 | 1967-12-09 | Temperaturkompensierte Z Diodenanord nung |
DE1639173A DE1639173C3 (de) | 1967-12-09 | 1968-01-20 | Temperaturkompensierte Z-Diodenanordnung |
DE1764251A DE1764251C3 (de) | 1967-12-09 | 1968-05-02 | Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung |
GB1230879D GB1230879A (de) | 1967-12-09 | 1968-12-05 | |
US781358A US3567965A (en) | 1967-12-09 | 1968-12-05 | Temperature compensated zener diode |
ES361196A ES361196A1 (es) | 1967-12-09 | 1968-12-07 | Un diodo zener con compensacion de temperatura. |
NL6817648A NL6817648A (de) | 1967-12-09 | 1968-12-09 | |
FR1599179D FR1599179A (de) | 1967-12-09 | 1968-12-09 | |
GB2563/69A GB1245531A (en) | 1967-12-09 | 1969-01-16 | Temperature compensated zener diode |
GB20659/69A GB1245668A (en) | 1967-12-09 | 1969-04-23 | Temperature compensated zener diode |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1967D0054814 DE1589707B2 (de) | 1967-12-09 | 1967-12-09 | Temperaturkompensierte Z Diodenanord nung |
DE19671589707 DE1589707C3 (de) | 1967-12-09 | 1967-12-09 | Temperaturkompensierte Z-Diodenanordnung |
DE1639173A DE1639173C3 (de) | 1967-12-09 | 1968-01-20 | Temperaturkompensierte Z-Diodenanordnung |
DE1639173 | 1968-01-20 | ||
DE1764251A DE1764251C3 (de) | 1967-12-09 | 1968-05-02 | Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung |
Publications (3)
Publication Number | Publication Date |
---|---|
DE1764251A1 DE1764251A1 (de) | 1972-05-04 |
DE1764251B2 true DE1764251B2 (de) | 1979-09-27 |
DE1764251C3 DE1764251C3 (de) | 1980-06-19 |
Family
ID=27509903
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1967D0054814 Granted DE1589707B2 (de) | 1967-12-09 | 1967-12-09 | Temperaturkompensierte Z Diodenanord nung |
DE1639173A Expired DE1639173C3 (de) | 1967-12-09 | 1968-01-20 | Temperaturkompensierte Z-Diodenanordnung |
DE1764251A Expired DE1764251C3 (de) | 1967-12-09 | 1968-05-02 | Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1967D0054814 Granted DE1589707B2 (de) | 1967-12-09 | 1967-12-09 | Temperaturkompensierte Z Diodenanord nung |
DE1639173A Expired DE1639173C3 (de) | 1967-12-09 | 1968-01-20 | Temperaturkompensierte Z-Diodenanordnung |
Country Status (5)
Country | Link |
---|---|
US (1) | US3567965A (de) |
DE (3) | DE1589707B2 (de) |
FR (1) | FR1599179A (de) |
GB (3) | GB1230879A (de) |
NL (1) | NL6817648A (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE756061A (fr) * | 1969-09-11 | 1971-03-11 | Philips Nv | Dispositif semi-conducteur |
US3703651A (en) * | 1971-07-12 | 1972-11-21 | Kollmorgen Corp | Temperature-controlled integrated circuits |
US3723776A (en) * | 1971-12-27 | 1973-03-27 | Us Navy | Temperature compensated zener diode circuit |
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
JPS5240017B2 (de) * | 1972-10-16 | 1977-10-08 | ||
JPS5330205Y2 (de) * | 1972-11-13 | 1978-07-28 | ||
US3875539A (en) * | 1973-11-26 | 1975-04-01 | Amp Inc | High voltage ripple reduction circuit |
DE2452107C3 (de) * | 1974-11-02 | 1979-08-23 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperaturkompensierte Z-Diodenanordnung |
DE2532847C2 (de) * | 1975-07-23 | 1982-08-19 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrierte Schaltung mit Zenerdiodenkennlinie |
US4075649A (en) * | 1975-11-25 | 1978-02-21 | Siemens Corporation | Single chip temperature compensated reference diode and method for making same |
DE2645182C2 (de) * | 1976-10-07 | 1983-02-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperaturkompensierte Z-Diodenanordnung, Betriebsschaltung hierfür und Verwendung der Anordnung mit dieser Betriebsschaltung |
US4311926A (en) * | 1977-08-11 | 1982-01-19 | Gte Laboratories Incorporated | Emitter coupled logic programmable logic arrays |
US4529998A (en) * | 1977-12-14 | 1985-07-16 | Eaton Corporation | Amplified gate thyristor with non-latching amplified control transistors across base layers |
JPS6048765B2 (ja) * | 1977-12-19 | 1985-10-29 | 日本電気株式会社 | 定電圧半導体集積回路 |
US4319257A (en) * | 1980-01-16 | 1982-03-09 | Harris Corporation | Low thermal coefficient semiconductor device |
DE3416404A1 (de) * | 1984-05-04 | 1985-11-07 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung |
US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
DE19526902A1 (de) * | 1995-07-22 | 1997-01-23 | Bosch Gmbh Robert | Monolithisch integrierte planare Halbleiteranordnung |
-
1967
- 1967-12-09 DE DE1967D0054814 patent/DE1589707B2/de active Granted
-
1968
- 1968-01-20 DE DE1639173A patent/DE1639173C3/de not_active Expired
- 1968-05-02 DE DE1764251A patent/DE1764251C3/de not_active Expired
- 1968-12-05 US US781358A patent/US3567965A/en not_active Expired - Lifetime
- 1968-12-05 GB GB1230879D patent/GB1230879A/en not_active Expired
- 1968-12-09 FR FR1599179D patent/FR1599179A/fr not_active Expired
- 1968-12-09 NL NL6817648A patent/NL6817648A/xx unknown
-
1969
- 1969-01-16 GB GB2563/69A patent/GB1245531A/en not_active Expired
- 1969-04-23 GB GB20659/69A patent/GB1245668A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1589707A1 (de) | 1970-05-06 |
DE1589707B2 (de) | 1971-02-04 |
DE1764251C3 (de) | 1980-06-19 |
DE1639173A1 (de) | 1971-04-08 |
GB1245531A (en) | 1971-09-08 |
GB1245668A (en) | 1971-09-08 |
DE1764251A1 (de) | 1972-05-04 |
FR1599179A (de) | 1970-07-15 |
DE1639173B2 (de) | 1971-09-23 |
GB1230879A (de) | 1971-05-05 |
US3567965A (en) | 1971-03-02 |
NL6817648A (de) | 1969-06-11 |
DE1639173C3 (de) | 1979-03-15 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C3 | Grant after two publication steps (3rd publication) | ||
8320 | Willingness to grant licences declared (paragraph 23) |