GB1245531A - Temperature compensated zener diode - Google Patents
Temperature compensated zener diodeInfo
- Publication number
- GB1245531A GB1245531A GB2563/69A GB256369A GB1245531A GB 1245531 A GB1245531 A GB 1245531A GB 2563/69 A GB2563/69 A GB 2563/69A GB 256369 A GB256369 A GB 256369A GB 1245531 A GB1245531 A GB 1245531A
- Authority
- GB
- United Kingdom
- Prior art keywords
- deposited
- collector
- transistor
- resistor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010079 rubber tapping Methods 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
- G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- General Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electronic Switches (AREA)
Abstract
1,245,531. Semiconductor devices. ITT INDUSTRIES Inc. 16 Jan., 1969 [20 Jan., 1968], No. 2563/69. Addition to 1,230,879. Heading H1K. [Also in Division H3] The temperature coefficient of the simulated Zener diode of the main Specification 1,230,879 which comprises at least three transistor structures formed as an integrated circuit and having a common collector region, the emitter junctions of the transistors being connected in series so that at least one is reverse biased to form a Zener diode and the remainder are forward biased, is reduced by incorporating a further transistor in the structure sharing the common collector region and having its emitter junction forward biased, and its base region biased by a potential divider comprising two resistors connected to the transistor collector and emitter, the value of at least one of the resistors being adjustable during manufacture. The residual temperature coefficient of the structure is measured and the values of the resistor are selected to provide compensation. In a first embodiment, Fig. 3 (not shown), the resistors are formed as diffused regions, the collector-base arm being formed in four sections in series the connections between which are provided with conductive connecting pads overlying an insulating layer on the surface of the wafer. One pair of adjacent pads may be bridged by a deposited track to select the desired resistance value. In a second embodiment, Fig. 4 (not shown), the resistors are formed as deposited tracks the arms of the potential divider being connected to the collector and emitter of the transistor and each comprising a plurality of sections of varying resistance having connection pads located on either side of a conducting strip connected to the base region of the transistor. A single strip of conductive material deposited across the conductive strip interconnects the connection pads of the desired resistor tapping parts and the base of the transistor. In a further embodiment, Fig. 5 (not shown), the resistors are in the form of deposited tracks, the emitter-base resistor being fixed in value and the collector-base resistor comprising a plurality of sections of different resistances joined by conductive pads adjacent ones of which may be connected together by a deposited connection to short out the relevant resistor section. The deposited selective connections may be connected together by a deposited connection to short out the relevant resistor section. The deposited selective connections may be replaced by wires bonded to the pads. In a further embodiment, Fig. 6 (not shown), the collector-base resistor comprises a broad diffused region or deposited area the resistance of which may be increased to the desired value by removing its lateral edge by sandblasting or etching. Reference has been directed by the Comptroller to Specification 1,082,519.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1967D0054814 DE1589707B2 (en) | 1967-12-09 | 1967-12-09 | Temperature compensated Z diode arrangement |
DE19671589707 DE1589707C3 (en) | 1967-12-09 | 1967-12-09 | Temperature-compensated Zener diode arrangement |
DE1639173A DE1639173C3 (en) | 1967-12-09 | 1968-01-20 | Temperature-compensated Zener diode arrangement |
DE1639173 | 1968-01-20 | ||
DE1764251A DE1764251C3 (en) | 1967-12-09 | 1968-05-02 | Temperature-compensated Zener diode arrangement and method for their production |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1245531A true GB1245531A (en) | 1971-09-08 |
Family
ID=27509903
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1230879D Expired GB1230879A (en) | 1967-12-09 | 1968-12-05 | |
GB2563/69A Expired GB1245531A (en) | 1967-12-09 | 1969-01-16 | Temperature compensated zener diode |
GB20659/69A Expired GB1245668A (en) | 1967-12-09 | 1969-04-23 | Temperature compensated zener diode |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1230879D Expired GB1230879A (en) | 1967-12-09 | 1968-12-05 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB20659/69A Expired GB1245668A (en) | 1967-12-09 | 1969-04-23 | Temperature compensated zener diode |
Country Status (5)
Country | Link |
---|---|
US (1) | US3567965A (en) |
DE (3) | DE1589707B2 (en) |
FR (1) | FR1599179A (en) |
GB (3) | GB1230879A (en) |
NL (1) | NL6817648A (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE756061A (en) * | 1969-09-11 | 1971-03-11 | Philips Nv | SEMICONDUCTOR DEVICE |
US3703651A (en) * | 1971-07-12 | 1972-11-21 | Kollmorgen Corp | Temperature-controlled integrated circuits |
US3723776A (en) * | 1971-12-27 | 1973-03-27 | Us Navy | Temperature compensated zener diode circuit |
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
JPS5240017B2 (en) * | 1972-10-16 | 1977-10-08 | ||
JPS5330205Y2 (en) * | 1972-11-13 | 1978-07-28 | ||
US3875539A (en) * | 1973-11-26 | 1975-04-01 | Amp Inc | High voltage ripple reduction circuit |
DE2452107C3 (en) * | 1974-11-02 | 1979-08-23 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperature-compensated Zener diode arrangement |
DE2532847C2 (en) * | 1975-07-23 | 1982-08-19 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrated circuit with Zener diode characteristic |
US4075649A (en) * | 1975-11-25 | 1978-02-21 | Siemens Corporation | Single chip temperature compensated reference diode and method for making same |
DE2645182C2 (en) * | 1976-10-07 | 1983-02-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperature-compensated Zener diode arrangement, operating circuit for this and use of the arrangement with this operating circuit |
US4311926A (en) * | 1977-08-11 | 1982-01-19 | Gte Laboratories Incorporated | Emitter coupled logic programmable logic arrays |
US4529998A (en) * | 1977-12-14 | 1985-07-16 | Eaton Corporation | Amplified gate thyristor with non-latching amplified control transistors across base layers |
JPS6048765B2 (en) * | 1977-12-19 | 1985-10-29 | 日本電気株式会社 | Constant voltage semiconductor integrated circuit |
US4319257A (en) * | 1980-01-16 | 1982-03-09 | Harris Corporation | Low thermal coefficient semiconductor device |
DE3416404A1 (en) * | 1984-05-04 | 1985-11-07 | Robert Bosch Gmbh, 7000 Stuttgart | MONOLITHICALLY INTEGRATED PLANAR SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF |
US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
DE19526902A1 (en) * | 1995-07-22 | 1997-01-23 | Bosch Gmbh Robert | Monolithically integrated planar semiconductor device |
-
1967
- 1967-12-09 DE DE1967D0054814 patent/DE1589707B2/en active Granted
-
1968
- 1968-01-20 DE DE1639173A patent/DE1639173C3/en not_active Expired
- 1968-05-02 DE DE1764251A patent/DE1764251C3/en not_active Expired
- 1968-12-05 US US781358A patent/US3567965A/en not_active Expired - Lifetime
- 1968-12-05 GB GB1230879D patent/GB1230879A/en not_active Expired
- 1968-12-09 FR FR1599179D patent/FR1599179A/fr not_active Expired
- 1968-12-09 NL NL6817648A patent/NL6817648A/xx unknown
-
1969
- 1969-01-16 GB GB2563/69A patent/GB1245531A/en not_active Expired
- 1969-04-23 GB GB20659/69A patent/GB1245668A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1589707A1 (en) | 1970-05-06 |
DE1589707B2 (en) | 1971-02-04 |
DE1764251C3 (en) | 1980-06-19 |
DE1639173A1 (en) | 1971-04-08 |
GB1245668A (en) | 1971-09-08 |
DE1764251A1 (en) | 1972-05-04 |
FR1599179A (en) | 1970-07-15 |
DE1639173B2 (en) | 1971-09-23 |
GB1230879A (en) | 1971-05-05 |
US3567965A (en) | 1971-03-02 |
NL6817648A (en) | 1969-06-11 |
DE1639173C3 (en) | 1979-03-15 |
DE1764251B2 (en) | 1979-09-27 |
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