GB1245531A - Temperature compensated zener diode - Google Patents

Temperature compensated zener diode

Info

Publication number
GB1245531A
GB1245531A GB2563/69A GB256369A GB1245531A GB 1245531 A GB1245531 A GB 1245531A GB 2563/69 A GB2563/69 A GB 2563/69A GB 256369 A GB256369 A GB 256369A GB 1245531 A GB1245531 A GB 1245531A
Authority
GB
United Kingdom
Prior art keywords
deposited
collector
transistor
resistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2563/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19671589707 external-priority patent/DE1589707C3/en
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1245531A publication Critical patent/GB1245531A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electronic Switches (AREA)

Abstract

1,245,531. Semiconductor devices. ITT INDUSTRIES Inc. 16 Jan., 1969 [20 Jan., 1968], No. 2563/69. Addition to 1,230,879. Heading H1K. [Also in Division H3] The temperature coefficient of the simulated Zener diode of the main Specification 1,230,879 which comprises at least three transistor structures formed as an integrated circuit and having a common collector region, the emitter junctions of the transistors being connected in series so that at least one is reverse biased to form a Zener diode and the remainder are forward biased, is reduced by incorporating a further transistor in the structure sharing the common collector region and having its emitter junction forward biased, and its base region biased by a potential divider comprising two resistors connected to the transistor collector and emitter, the value of at least one of the resistors being adjustable during manufacture. The residual temperature coefficient of the structure is measured and the values of the resistor are selected to provide compensation. In a first embodiment, Fig. 3 (not shown), the resistors are formed as diffused regions, the collector-base arm being formed in four sections in series the connections between which are provided with conductive connecting pads overlying an insulating layer on the surface of the wafer. One pair of adjacent pads may be bridged by a deposited track to select the desired resistance value. In a second embodiment, Fig. 4 (not shown), the resistors are formed as deposited tracks the arms of the potential divider being connected to the collector and emitter of the transistor and each comprising a plurality of sections of varying resistance having connection pads located on either side of a conducting strip connected to the base region of the transistor. A single strip of conductive material deposited across the conductive strip interconnects the connection pads of the desired resistor tapping parts and the base of the transistor. In a further embodiment, Fig. 5 (not shown), the resistors are in the form of deposited tracks, the emitter-base resistor being fixed in value and the collector-base resistor comprising a plurality of sections of different resistances joined by conductive pads adjacent ones of which may be connected together by a deposited connection to short out the relevant resistor section. The deposited selective connections may be connected together by a deposited connection to short out the relevant resistor section. The deposited selective connections may be replaced by wires bonded to the pads. In a further embodiment, Fig. 6 (not shown), the collector-base resistor comprises a broad diffused region or deposited area the resistance of which may be increased to the desired value by removing its lateral edge by sandblasting or etching. Reference has been directed by the Comptroller to Specification 1,082,519.
GB2563/69A 1967-12-09 1969-01-16 Temperature compensated zener diode Expired GB1245531A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE1967D0054814 DE1589707B2 (en) 1967-12-09 1967-12-09 Temperature compensated Z diode arrangement
DE19671589707 DE1589707C3 (en) 1967-12-09 1967-12-09 Temperature-compensated Zener diode arrangement
DE1639173A DE1639173C3 (en) 1967-12-09 1968-01-20 Temperature-compensated Zener diode arrangement
DE1639173 1968-01-20
DE1764251A DE1764251C3 (en) 1967-12-09 1968-05-02 Temperature-compensated Zener diode arrangement and method for their production

Publications (1)

Publication Number Publication Date
GB1245531A true GB1245531A (en) 1971-09-08

Family

ID=27509903

Family Applications (3)

Application Number Title Priority Date Filing Date
GB1230879D Expired GB1230879A (en) 1967-12-09 1968-12-05
GB2563/69A Expired GB1245531A (en) 1967-12-09 1969-01-16 Temperature compensated zener diode
GB20659/69A Expired GB1245668A (en) 1967-12-09 1969-04-23 Temperature compensated zener diode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1230879D Expired GB1230879A (en) 1967-12-09 1968-12-05

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB20659/69A Expired GB1245668A (en) 1967-12-09 1969-04-23 Temperature compensated zener diode

Country Status (5)

Country Link
US (1) US3567965A (en)
DE (3) DE1589707B2 (en)
FR (1) FR1599179A (en)
GB (3) GB1230879A (en)
NL (1) NL6817648A (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756061A (en) * 1969-09-11 1971-03-11 Philips Nv SEMICONDUCTOR DEVICE
US3703651A (en) * 1971-07-12 1972-11-21 Kollmorgen Corp Temperature-controlled integrated circuits
US3723776A (en) * 1971-12-27 1973-03-27 Us Navy Temperature compensated zener diode circuit
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS5240017B2 (en) * 1972-10-16 1977-10-08
JPS5330205Y2 (en) * 1972-11-13 1978-07-28
US3875539A (en) * 1973-11-26 1975-04-01 Amp Inc High voltage ripple reduction circuit
DE2452107C3 (en) * 1974-11-02 1979-08-23 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperature-compensated Zener diode arrangement
DE2532847C2 (en) * 1975-07-23 1982-08-19 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrated circuit with Zener diode characteristic
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
DE2645182C2 (en) * 1976-10-07 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperature-compensated Zener diode arrangement, operating circuit for this and use of the arrangement with this operating circuit
US4311926A (en) * 1977-08-11 1982-01-19 Gte Laboratories Incorporated Emitter coupled logic programmable logic arrays
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS6048765B2 (en) * 1977-12-19 1985-10-29 日本電気株式会社 Constant voltage semiconductor integrated circuit
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
DE3416404A1 (en) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart MONOLITHICALLY INTEGRATED PLANAR SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
DE19526902A1 (en) * 1995-07-22 1997-01-23 Bosch Gmbh Robert Monolithically integrated planar semiconductor device

Also Published As

Publication number Publication date
DE1589707A1 (en) 1970-05-06
DE1589707B2 (en) 1971-02-04
DE1764251C3 (en) 1980-06-19
DE1639173A1 (en) 1971-04-08
GB1245668A (en) 1971-09-08
DE1764251A1 (en) 1972-05-04
FR1599179A (en) 1970-07-15
DE1639173B2 (en) 1971-09-23
GB1230879A (en) 1971-05-05
US3567965A (en) 1971-03-02
NL6817648A (en) 1969-06-11
DE1639173C3 (en) 1979-03-15
DE1764251B2 (en) 1979-09-27

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