DE112006001768B8 - Verwendung eines superkritischen Fluids zum Trocknen der Scheiben und zum Reinigen der Linsen in einer Immersionslithographie - Google Patents
Verwendung eines superkritischen Fluids zum Trocknen der Scheiben und zum Reinigen der Linsen in einer Immersionslithographie Download PDFInfo
- Publication number
- DE112006001768B8 DE112006001768B8 DE112006001768T DE112006001768T DE112006001768B8 DE 112006001768 B8 DE112006001768 B8 DE 112006001768B8 DE 112006001768 T DE112006001768 T DE 112006001768T DE 112006001768 T DE112006001768 T DE 112006001768T DE 112006001768 B8 DE112006001768 B8 DE 112006001768B8
- Authority
- DE
- Germany
- Prior art keywords
- discs
- lenses
- clean
- dry
- supercritical fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012530 fluid Substances 0.000 title 1
- 238000000671 immersion lithography Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/173,257 US7262422B2 (en) | 2005-07-01 | 2005-07-01 | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
US11/173,257 | 2005-07-01 | ||
PCT/US2006/024765 WO2007005362A2 (en) | 2005-07-01 | 2006-06-23 | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
Publications (3)
Publication Number | Publication Date |
---|---|
DE112006001768T5 DE112006001768T5 (de) | 2008-08-14 |
DE112006001768B4 DE112006001768B4 (de) | 2012-02-16 |
DE112006001768B8 true DE112006001768B8 (de) | 2012-07-12 |
Family
ID=37547708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112006001768T Expired - Fee Related DE112006001768B8 (de) | 2005-07-01 | 2006-06-23 | Verwendung eines superkritischen Fluids zum Trocknen der Scheiben und zum Reinigen der Linsen in einer Immersionslithographie |
Country Status (8)
Country | Link |
---|---|
US (1) | US7262422B2 (de) |
JP (1) | JP2009500828A (de) |
KR (1) | KR20080026204A (de) |
CN (1) | CN101467102B (de) |
DE (1) | DE112006001768B8 (de) |
GB (1) | GB2442402B (de) |
TW (1) | TW200707123A (de) |
WO (1) | WO2007005362A2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201803122UA (en) | 2003-04-11 | 2018-06-28 | Nikon Corp | Immersion lithography apparatus and device manufacturing method |
TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN105467775B (zh) | 2004-06-09 | 2018-04-10 | 株式会社尼康 | 曝光装置及元件制造方法 |
US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
US7156925B1 (en) * | 2004-11-01 | 2007-01-02 | Advanced Micro Devices, Inc. | Using supercritical fluids to clean lenses and monitor defects |
EP1821337B1 (de) * | 2004-12-06 | 2016-05-11 | Nikon Corporation | Wartungsverfahren |
US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US7528387B2 (en) * | 2005-12-29 | 2009-05-05 | Interuniversitair Microelektronica Centrum (Imec) | Methods and systems for characterising and optimising immersion lithographic processing |
JP4704221B2 (ja) * | 2006-01-26 | 2011-06-15 | 株式会社Sokudo | 基板処理装置および基板処理方法 |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
EP2034514A4 (de) * | 2006-05-22 | 2012-01-11 | Nikon Corp | Belichtungsverfahren und vorrichtung, wartungsverfahren und bauelementeherstellungsverfahren |
KR101523388B1 (ko) * | 2006-08-30 | 2015-05-27 | 가부시키가이샤 니콘 | 노광 장치, 디바이스 제조 방법, 클리닝 방법 및 클리닝용 부재 |
WO2008029884A1 (fr) * | 2006-09-08 | 2008-03-13 | Nikon Corporation | Dispositif et procédé de nettoyage, et procédé de fabrication du dispositif |
US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
US8947629B2 (en) * | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US7866330B2 (en) | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9013672B2 (en) * | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US8264662B2 (en) * | 2007-06-18 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-line particle detection for immersion lithography |
US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8454409B2 (en) * | 2009-09-10 | 2013-06-04 | Rave N.P., Inc. | CO2 nozzles |
CA2784148A1 (en) * | 2009-12-28 | 2011-07-28 | Pioneer Hi-Bred International, Inc. | Sorghum fertility restorer genotypes and methods of marker-assisted selection |
JP6876417B2 (ja) * | 2016-12-02 | 2021-05-26 | 東京エレクトロン株式会社 | 基板処理装置の洗浄方法および基板処理装置の洗浄システム |
CN113189849B (zh) * | 2021-04-22 | 2023-08-11 | 中国科学院光电技术研究所 | 一种近场光刻浸没***及其浸没单元和接口模组 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040011386A1 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies Inc. | Composition and method for removing photoresist and/or resist residue using supercritical fluids |
US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
WO2004093130A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
US20050028927A1 (en) * | 2003-08-06 | 2005-02-10 | Cem Basceri | Supercritical fluid technology for cleaning processing chambers and systems |
WO2005015315A2 (de) * | 2003-07-24 | 2005-02-17 | Carl Zeiss Smt Ag | Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum |
Family Cites Families (15)
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US5879866A (en) * | 1994-12-19 | 1999-03-09 | International Business Machines Corporation | Image recording process with improved image tolerances using embedded AR coatings |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
JPH11162831A (ja) * | 1997-11-21 | 1999-06-18 | Nikon Corp | 投影露光装置及び投影露光方法 |
CN1246888C (zh) * | 2000-08-14 | 2006-03-22 | 东京毅力科创株式会社 | 用超临界二氧化碳工艺从半导体上去除光致抗蚀剂和光致抗蚀残留物 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
WO2003040830A2 (en) * | 2001-11-07 | 2003-05-15 | Applied Materials, Inc. | Optical spot grid array printer |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
JP2004193231A (ja) * | 2002-12-10 | 2004-07-08 | Mitsubishi Electric Corp | 基板洗浄方法 |
US6875286B2 (en) * | 2002-12-16 | 2005-04-05 | International Business Machines Corporation | Solid CO2 cleaning |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
EP1486827B1 (de) * | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
US6844206B1 (en) * | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
JP4305095B2 (ja) * | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
JP2005081302A (ja) * | 2003-09-10 | 2005-03-31 | Japan Organo Co Ltd | 超臨界流体による電子部品部材類の洗浄方法及び洗浄装置 |
US20070002296A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
-
2005
- 2005-07-01 US US11/173,257 patent/US7262422B2/en not_active Expired - Fee Related
-
2006
- 2006-06-23 KR KR1020087002830A patent/KR20080026204A/ko not_active Application Discontinuation
- 2006-06-23 CN CN2006800236145A patent/CN101467102B/zh not_active Expired - Fee Related
- 2006-06-23 DE DE112006001768T patent/DE112006001768B8/de not_active Expired - Fee Related
- 2006-06-23 JP JP2008519446A patent/JP2009500828A/ja active Pending
- 2006-06-23 WO PCT/US2006/024765 patent/WO2007005362A2/en active Application Filing
- 2006-06-27 TW TW095123101A patent/TW200707123A/zh unknown
-
2008
- 2008-01-22 GB GB0801083A patent/GB2442402B/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
US20040011386A1 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies Inc. | Composition and method for removing photoresist and/or resist residue using supercritical fluids |
WO2004093130A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
WO2005015315A2 (de) * | 2003-07-24 | 2005-02-17 | Carl Zeiss Smt Ag | Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum |
US20050028927A1 (en) * | 2003-08-06 | 2005-02-10 | Cem Basceri | Supercritical fluid technology for cleaning processing chambers and systems |
Also Published As
Publication number | Publication date |
---|---|
CN101467102B (zh) | 2012-01-11 |
US20070026345A1 (en) | 2007-02-01 |
TW200707123A (en) | 2007-02-16 |
WO2007005362A3 (en) | 2007-04-12 |
DE112006001768B4 (de) | 2012-02-16 |
GB2442402B (en) | 2009-02-18 |
US7262422B2 (en) | 2007-08-28 |
WO2007005362A2 (en) | 2007-01-11 |
GB2442402A (en) | 2008-04-02 |
KR20080026204A (ko) | 2008-03-24 |
CN101467102A (zh) | 2009-06-24 |
GB0801083D0 (en) | 2008-02-27 |
DE112006001768T5 (de) | 2008-08-14 |
JP2009500828A (ja) | 2009-01-08 |
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Legal Events
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OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY Owner name: SPANSION LLC, SUNNYVALE, CALIF., US |
|
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final | ||
R020 | Patent grant now final |
Effective date: 20120517 |
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R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |