DE10326335B8 - Halbleiterlaser mit Fensterbereich und Element zur optischen Nachrichtenübertragung - Google Patents

Halbleiterlaser mit Fensterbereich und Element zur optischen Nachrichtenübertragung Download PDF

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Publication number
DE10326335B8
DE10326335B8 DE10326335A DE10326335A DE10326335B8 DE 10326335 B8 DE10326335 B8 DE 10326335B8 DE 10326335 A DE10326335 A DE 10326335A DE 10326335 A DE10326335 A DE 10326335A DE 10326335 B8 DE10326335 B8 DE 10326335B8
Authority
DE
Germany
Prior art keywords
semiconductor laser
optical communication
window area
communication element
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10326335A
Other languages
English (en)
Other versions
DE10326335B4 (de
DE10326335A1 (de
Inventor
Yuichiro Okunuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10326335A1 publication Critical patent/DE10326335A1/de
Application granted granted Critical
Publication of DE10326335B4 publication Critical patent/DE10326335B4/de
Publication of DE10326335B8 publication Critical patent/DE10326335B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
DE10326335A 2002-10-17 2003-06-11 Halbleiterlaser mit Fensterbereich und Element zur optischen Nachrichtenübertragung Expired - Fee Related DE10326335B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-302711 2002-10-17
JP2002302711A JP4309636B2 (ja) 2002-10-17 2002-10-17 半導体レーザおよび光通信用素子

Publications (3)

Publication Number Publication Date
DE10326335A1 DE10326335A1 (de) 2004-05-13
DE10326335B4 DE10326335B4 (de) 2008-02-14
DE10326335B8 true DE10326335B8 (de) 2008-06-05

Family

ID=32089375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10326335A Expired - Fee Related DE10326335B8 (de) 2002-10-17 2003-06-11 Halbleiterlaser mit Fensterbereich und Element zur optischen Nachrichtenübertragung

Country Status (6)

Country Link
US (1) US7039084B2 (de)
JP (1) JP4309636B2 (de)
KR (1) KR100576299B1 (de)
CN (1) CN1251370C (de)
DE (1) DE10326335B8 (de)
TW (1) TWI222251B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4735574B2 (ja) * 2006-03-24 2011-07-27 三菱電機株式会社 半導体レーザおよび半導体レーザモジュール
JP6256311B2 (ja) * 2014-11-17 2018-01-10 三菱電機株式会社 半導体光素子およびその製造方法
JP6790364B2 (ja) * 2016-01-25 2020-11-25 三菱電機株式会社 光半導体装置
JP2017224763A (ja) * 2016-06-16 2017-12-21 三菱電機株式会社 半導体素子の製造方法、半導体素子
JP7109934B2 (ja) * 2018-02-13 2022-08-01 スタンレー電気株式会社 照明装置及び車両用灯具

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6272161B1 (en) * 1997-06-09 2001-08-07 Iuliah Basarab Petrescu-Prahova High power diode type laser devices
US6385225B1 (en) * 1999-05-11 2002-05-07 Nec Corporation Window type semiconductor laser light emitting device and a process of fabricating thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334993A (ja) * 1986-07-29 1988-02-15 Nec Corp 半導体レ−ザ装置
JPS6334992A (ja) * 1986-07-29 1988-02-15 Nec Corp 半導体レ−ザ装置
JPH02203586A (ja) * 1989-02-01 1990-08-13 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JPH0786678A (ja) * 1993-05-31 1995-03-31 Mitsubishi Electric Corp 半導体レーザ装置
JPH07162086A (ja) * 1993-12-10 1995-06-23 Mitsubishi Electric Corp 半導体レーザの製造方法
US5539759A (en) * 1994-10-04 1996-07-23 Board Of Trustees Of The Leland Stanford Junior University Single mode laser with a passive antiguide region
JP2827919B2 (ja) * 1994-10-11 1998-11-25 三菱電機株式会社 半導体レーザ装置及びその製造方法
JPH09139550A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
JP3441385B2 (ja) * 1998-11-20 2003-09-02 日本電信電話株式会社 光結合デバイス
JP2000277869A (ja) * 1999-03-29 2000-10-06 Mitsubishi Electric Corp 変調器集積型半導体レーザ装置及びその製造方法
JP2001057458A (ja) * 1999-08-17 2001-02-27 Mitsubishi Chemicals Corp 半導体発光装置
JP2002185077A (ja) * 2000-12-14 2002-06-28 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP3719705B2 (ja) * 2001-01-19 2005-11-24 ユーディナデバイス株式会社 化合物半導体装置の製造方法
US6829285B2 (en) * 2001-09-28 2004-12-07 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for effectively reducing facet reflectivity

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6272161B1 (en) * 1997-06-09 2001-08-07 Iuliah Basarab Petrescu-Prahova High power diode type laser devices
US6385225B1 (en) * 1999-05-11 2002-05-07 Nec Corporation Window type semiconductor laser light emitting device and a process of fabricating thereof

Also Published As

Publication number Publication date
KR100576299B1 (ko) 2006-05-03
CN1251370C (zh) 2006-04-12
TWI222251B (en) 2004-10-11
DE10326335B4 (de) 2008-02-14
JP2004140142A (ja) 2004-05-13
KR20040034351A (ko) 2004-04-28
JP4309636B2 (ja) 2009-08-05
US7039084B2 (en) 2006-05-02
CN1490909A (zh) 2004-04-21
DE10326335A1 (de) 2004-05-13
US20040076206A1 (en) 2004-04-22
TW200406962A (en) 2004-05-01

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8396 Reprint of erroneous front page
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee