DE10207342A1 - Verfahren zum Liefern unterschiedlicher Frequenzeinstellungen bei einem akustischen Dünnfilmvolumenresonator- (FBAR-) Filter und Vorrichtung, die das Verfahren beinhaltet - Google Patents
Verfahren zum Liefern unterschiedlicher Frequenzeinstellungen bei einem akustischen Dünnfilmvolumenresonator- (FBAR-) Filter und Vorrichtung, die das Verfahren beinhaltetInfo
- Publication number
- DE10207342A1 DE10207342A1 DE10207342A DE10207342A DE10207342A1 DE 10207342 A1 DE10207342 A1 DE 10207342A1 DE 10207342 A DE10207342 A DE 10207342A DE 10207342 A DE10207342 A DE 10207342A DE 10207342 A1 DE10207342 A1 DE 10207342A1
- Authority
- DE
- Germany
- Prior art keywords
- resonator
- layer
- upper electrode
- electrode
- resonance frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 40
- 239000004020 conductor Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims description 14
- 239000011733 molybdenum Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 129
- 239000012792 core layer Substances 0.000 description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 210000003608 fece Anatomy 0.000 description 2
- 241000599985 Beijerinckia mobilis Species 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (32)
Erzeugen eines ersten Resonators (50) auf dem Substrat (42), wobei der erste Resonator eine erste untere Elektrode (52), eine erste piezoelektrische (PZ-) Schicht (54) und eine erste obere Elektrode (56) auf weist;
Erzeugen eines zweiten Resonators (60) auf dem Sub strat (42), wobei der zweite Resonator eine zweite un tere Elektrode (62), eine zweite piezoelektrische (PZ-)Schicht (64) und eine zweite obere Elektrode (66) aufweist; und
Oxidieren der ersten oberen Elektrode (56), um die Re sonanzfrequenz des ersten Resonators (50) zu senken.
einem ersten Resonator (50), der eine erste untere Elektrode (52), eine erste piezoelektrische (PZ-) Schicht (54) und eine erste obere Elektrode (56) auf weist, wobei die erste obere Elektrode eine Leiter schicht und eine oxidierte Leiterschicht aufweist; und
einem zweiten Resonator (60), der eine zweite untere Elektrode (62), eine zweite piezoelektrische (PZ-) Schicht (64) und eine zweite obere Elektrode (66) auf weist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/799,153 | 2001-03-05 | ||
US09/799,153 US6566979B2 (en) | 2001-03-05 | 2001-03-05 | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10207342A1 true DE10207342A1 (de) | 2002-09-26 |
DE10207342B4 DE10207342B4 (de) | 2009-06-10 |
Family
ID=25175162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10207342A Expired - Fee Related DE10207342B4 (de) | 2001-03-05 | 2002-02-21 | Verfahren zum Liefern unterschiedlicher Frequenzeinstellungen bei einem akustischen Dünnfilmvolumenresonator- (FBAR-) Filter und Vorrichtung, die das Verfahren beinhaltet |
Country Status (3)
Country | Link |
---|---|
US (1) | US6566979B2 (de) |
JP (1) | JP2002359539A (de) |
DE (1) | DE10207342B4 (de) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10124349A1 (de) * | 2001-05-18 | 2002-12-05 | Infineon Technologies Ag | Piezoelektrische Resonatorvorrichtung mit Verstimmungsschichtfolge |
JP2003229743A (ja) * | 2001-11-29 | 2003-08-15 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
US6662419B2 (en) * | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
DE10162580A1 (de) * | 2001-12-19 | 2003-07-17 | Infineon Technologies Ag | Piezoelektrischer Schwingkreis, Verfahren zu dessen Herstellung und Filteranordnung |
JP3952464B2 (ja) * | 2002-02-27 | 2007-08-01 | Tdk株式会社 | デュプレクサ |
JP4039322B2 (ja) | 2002-07-23 | 2008-01-30 | 株式会社村田製作所 | 圧電フィルタ、デュプレクサ、複合圧電共振器および通信装置、並びに、圧電フィルタの周波数調整方法 |
US6816035B2 (en) * | 2002-08-08 | 2004-11-09 | Intel Corporation | Forming film bulk acoustic resonator filters |
US7275292B2 (en) * | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
EP1489740A3 (de) * | 2003-06-18 | 2006-06-28 | Matsushita Electric Industrial Co., Ltd. | Elektronisches Bauelement und Verfahren zur Herstellung desselben |
US6965274B2 (en) * | 2003-06-23 | 2005-11-15 | Lg Electronics Inc. | Thin film bulk acoustic resonator for controlling resonance frequency and voltage controlled oscillator using the same |
US7019605B2 (en) * | 2003-10-30 | 2006-03-28 | Larson Iii John D | Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth |
US7332985B2 (en) * | 2003-10-30 | 2008-02-19 | Avago Technologies Wireless Ip (Singapore) Pte Ltd. | Cavity-less film bulk acoustic resonator (FBAR) devices |
US6946928B2 (en) * | 2003-10-30 | 2005-09-20 | Agilent Technologies, Inc. | Thin-film acoustically-coupled transformer |
DE602004000851T2 (de) | 2003-10-30 | 2007-05-16 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Akustisch gekoppelter Dünnschicht-Transformator mit zwei piezoelektrischen Elementen, welche entgegengesetzte C-Axen Orientierung besitzten |
US7400217B2 (en) | 2003-10-30 | 2008-07-15 | Avago Technologies Wireless Ip Pte Ltd | Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwith |
US7242130B2 (en) | 2003-11-07 | 2007-07-10 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor |
US7057477B2 (en) * | 2003-12-24 | 2006-06-06 | Intel Corporation | Integration of FBAR filter(s) and on-chip inductors |
EP1575165B1 (de) * | 2004-03-09 | 2008-05-07 | Infineon Technologies AG | Akustischer Volumenwellen - Filter und Verfahren zur Vermeidung unerwünschter Seitendurchgänge |
US7332061B2 (en) * | 2004-03-30 | 2008-02-19 | Intel Corporation | Integration of multiple frequency band FBAR filters |
JP4223428B2 (ja) | 2004-03-31 | 2009-02-12 | 富士通メディアデバイス株式会社 | フィルタおよびその製造方法 |
US20050248420A1 (en) * | 2004-05-07 | 2005-11-10 | Qing Ma | Forming integrated plural frequency band film bulk acoustic resonators |
US7114252B2 (en) * | 2004-06-17 | 2006-10-03 | Toko, Inc. | Large scale simultaneous circuit encapsulating apparatus |
US20060017352A1 (en) * | 2004-07-20 | 2006-01-26 | Aram Tanielian | Thin device and method of fabrication |
US7388454B2 (en) * | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
US8981876B2 (en) * | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
US20060125084A1 (en) * | 2004-12-15 | 2006-06-15 | Fazzio Ronald S | Integration of micro-electro mechanical systems and active circuitry |
US7202560B2 (en) * | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
US7791434B2 (en) | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
US7427819B2 (en) * | 2005-03-04 | 2008-09-23 | Avago Wireless Ip Pte Ltd | Film-bulk acoustic wave resonator with motion plate and method |
US7369013B2 (en) * | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
US7358651B2 (en) * | 2005-04-18 | 2008-04-15 | Avago Technologies Wireless (Singapore) Pte. Ltd. | Apparatus and method for detecting a target environmental variable that employs film-bulk acoustic wave resonator oscillators |
US7443269B2 (en) * | 2005-07-27 | 2008-10-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit |
US7868522B2 (en) | 2005-09-09 | 2011-01-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Adjusted frequency temperature coefficient resonator |
US7391286B2 (en) * | 2005-10-06 | 2008-06-24 | Avago Wireless Ip Pte Ltd | Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters |
US7737807B2 (en) | 2005-10-18 | 2010-06-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators |
US7425787B2 (en) * | 2005-10-18 | 2008-09-16 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator |
US7675390B2 (en) | 2005-10-18 | 2010-03-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
US7525398B2 (en) * | 2005-10-18 | 2009-04-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustically communicating data signals across an electrical isolation barrier |
US7423503B2 (en) * | 2005-10-18 | 2008-09-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating film acoustically-coupled transformer |
US7463499B2 (en) | 2005-10-31 | 2008-12-09 | Avago Technologies General Ip (Singapore) Pte Ltd. | AC-DC power converter |
US7561009B2 (en) * | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
US7586392B2 (en) * | 2006-01-23 | 2009-09-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Dual path acoustic data coupling system and method |
US7514844B2 (en) * | 2006-01-23 | 2009-04-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic data coupling system and method |
US7746677B2 (en) | 2006-03-09 | 2010-06-29 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | AC-DC converter circuit and power supply |
US20070210748A1 (en) * | 2006-03-09 | 2007-09-13 | Mark Unkrich | Power supply and electronic device having integrated power supply |
US7479685B2 (en) | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
US7639103B2 (en) * | 2006-06-26 | 2009-12-29 | Panasonic Corporation | Piezoelectric filter, antenna duplexer, and communications apparatus employing piezoelectric resonator |
US7508286B2 (en) * | 2006-09-28 | 2009-03-24 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | HBAR oscillator and method of manufacture |
US20080202239A1 (en) * | 2007-02-28 | 2008-08-28 | Fazzio R Shane | Piezoelectric acceleration sensor |
US7791435B2 (en) | 2007-09-28 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Single stack coupled resonators having differential output |
US7855618B2 (en) | 2008-04-30 | 2010-12-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator electrical impedance transformers |
US7732977B2 (en) | 2008-04-30 | 2010-06-08 | Avago Technologies Wireless Ip (Singapore) | Transceiver circuit for film bulk acoustic resonator (FBAR) transducers |
US20100277034A1 (en) | 2009-03-11 | 2010-11-04 | Rajarishi Sinha | Array of baw resonators with mask controlled resonant frequencies |
US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
JP2011041136A (ja) * | 2009-08-17 | 2011-02-24 | Taiyo Yuden Co Ltd | 弾性波デバイスおよびその製造方法 |
US8193877B2 (en) | 2009-11-30 | 2012-06-05 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Duplexer with negative phase shifting circuit |
US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
US8575820B2 (en) | 2011-03-29 | 2013-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator |
US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US8350445B1 (en) | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
KR102588800B1 (ko) * | 2016-02-22 | 2023-10-13 | 삼성전기주식회사 | 음향파 필터 장치 및 이의 제조방법 |
WO2017208568A1 (ja) * | 2016-06-01 | 2017-12-07 | 株式会社村田製作所 | 共振子及び共振装置 |
JP7036487B2 (ja) | 2016-07-07 | 2022-03-15 | サムソン エレクトロ-メカニックス カンパニーリミテッド. | 弾性波フィルタ装置及びその製造方法 |
US12021496B2 (en) * | 2020-08-31 | 2024-06-25 | Murata Manufacturing Co., Ltd. | Resonators with different membrane thicknesses on the same die |
WO2021003699A1 (zh) * | 2019-07-10 | 2021-01-14 | 开元通信技术(厦门)有限公司 | 体声波滤波器及其制作方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3222622A (en) | 1962-08-14 | 1965-12-07 | Clevite Corp | Wave filter comprising piezoelectric wafer electroded to define a plurality of resonant regions independently operable without significant electro-mechanical interaction |
US3401276A (en) * | 1965-04-19 | 1968-09-10 | Clevite Corp | Piezoelectric resonators |
GB1207974A (en) * | 1966-11-17 | 1970-10-07 | Clevite Corp | Frequency selective apparatus including a piezoelectric device |
AU413304B2 (en) * | 1968-03-28 | 1971-05-17 | Amalgamated Wireless (Australasia) Limited | Improvements in quartz crystal units |
US3760204A (en) * | 1972-03-01 | 1973-09-18 | Motorola Inc | Acoustic surface wave resonator |
CA1106960A (en) * | 1976-02-17 | 1981-08-11 | Virgil E. Bottom | Method of adjusting the frequency of a crystal resonator |
GB1580600A (en) * | 1978-05-09 | 1980-12-03 | Philips Electronic Associated | Kpiezoelectric devices |
DE2845807A1 (de) * | 1978-10-20 | 1980-04-24 | Siemens Ag | Piezoelektrischer resonator |
US4320365A (en) | 1980-11-03 | 1982-03-16 | United Technologies Corporation | Fundamental, longitudinal, thickness mode bulk wave resonator |
US4638536A (en) * | 1986-01-17 | 1987-01-27 | The United States Of America As Represented By The Secretary Of The Army | Method of making a resonator having a desired frequency from a quartz crystal resonator plate |
US5231327A (en) * | 1990-12-14 | 1993-07-27 | Tfr Technologies, Inc. | Optimized piezoelectric resonator-based networks |
US5587620A (en) | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
US5815900A (en) * | 1995-03-06 | 1998-10-06 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a surface acoustic wave module |
US5692279A (en) * | 1995-08-17 | 1997-12-02 | Motorola | Method of making a monolithic thin film resonator lattice filter |
US5894647A (en) | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
US6060818A (en) | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
-
2001
- 2001-03-05 US US09/799,153 patent/US6566979B2/en not_active Expired - Fee Related
-
2002
- 2002-02-21 DE DE10207342A patent/DE10207342B4/de not_active Expired - Fee Related
- 2002-03-04 JP JP2002057210A patent/JP2002359539A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE10207342B4 (de) | 2009-06-10 |
US6566979B2 (en) | 2003-05-20 |
JP2002359539A (ja) | 2002-12-13 |
US20020121944A1 (en) | 2002-09-05 |
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