FI20150334A - Paranneltu puolijohdekokoonpano - Google Patents

Paranneltu puolijohdekokoonpano

Info

Publication number
FI20150334A
FI20150334A FI20150334A FI20150334A FI20150334A FI 20150334 A FI20150334 A FI 20150334A FI 20150334 A FI20150334 A FI 20150334A FI 20150334 A FI20150334 A FI 20150334A FI 20150334 A FI20150334 A FI 20150334A
Authority
FI
Finland
Prior art keywords
improved semiconductor
semiconductor configuration
configuration
improved
semiconductor
Prior art date
Application number
FI20150334A
Other languages
English (en)
Swedish (sv)
Inventor
Artto Mikael Aurola
Original Assignee
Artto Mikael Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Mikael Aurola filed Critical Artto Mikael Aurola
Priority to AU2016207940A priority Critical patent/AU2016207940B2/en
Priority to TW105100899A priority patent/TWI698000B/zh
Priority to EP16737119.4A priority patent/EP3245738A4/en
Priority to NZ733838A priority patent/NZ733838A/en
Priority to CN202010951137.0A priority patent/CN112151617A/zh
Priority to KR1020177022176A priority patent/KR20180048441A/ko
Priority to JP2017555847A priority patent/JP6737808B2/ja
Priority to SG11201705751PA priority patent/SG11201705751PA/en
Priority to CA2973650A priority patent/CA2973650A1/en
Priority to US15/543,801 priority patent/US9948304B2/en
Priority to PCT/FI2016/050014 priority patent/WO2016113468A1/en
Priority to CN201680006035.3A priority patent/CN107431485B/zh
Publication of FI20150334A publication Critical patent/FI20150334A/fi
Priority to IL253412A priority patent/IL253412B/en
Priority to US15/954,202 priority patent/US10243565B2/en
Priority to US16/173,271 priority patent/US10389360B2/en
Priority to US16/447,829 priority patent/US10879900B2/en
Priority to JP2020121073A priority patent/JP2020181991A/ja
Priority to US17/247,021 priority patent/US11283450B2/en
Priority to US17/667,178 priority patent/US20220166432A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/0941—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of complementary type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0692—Surface layout
    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
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    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
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    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
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    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425—Multistate logic
    • H—ELECTRICITY
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    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H03K19/0963—Synchronous circuits, i.e. using clock signals using transistors of complementary type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
FI20150334A 2015-01-14 2015-11-30 Paranneltu puolijohdekokoonpano FI20150334A (fi)

Priority Applications (19)

Application Number Priority Date Filing Date Title
SG11201705751PA SG11201705751PA (en) 2015-01-14 2016-01-13 A semiconductor logic element and a logic circuitry
CA2973650A CA2973650A1 (en) 2015-01-14 2016-01-13 A semiconductor logic element and a logic circuitry
EP16737119.4A EP3245738A4 (en) 2015-01-14 2016-01-13 SEMICONDUCTOR LOGIC ELEMENT AND LOGICAL SWITCHING
NZ733838A NZ733838A (en) 2015-01-14 2016-01-13 A semiconductor logic element and a logic circuitry
CN202010951137.0A CN112151617A (zh) 2015-01-14 2016-01-13 导体绝缘体半导体场效应晶体管
KR1020177022176A KR20180048441A (ko) 2015-01-14 2016-01-13 반도체 논리 소자 및 논리 회로
JP2017555847A JP6737808B2 (ja) 2015-01-14 2016-01-13 改良された半導体構成
PCT/FI2016/050014 WO2016113468A1 (en) 2015-01-14 2016-01-13 A semiconductor logic element and a logic circuitry
US15/543,801 US9948304B2 (en) 2015-01-14 2016-01-13 Semiconductor logic element and a logic circuitry
AU2016207940A AU2016207940B2 (en) 2015-01-14 2016-01-13 A semiconductor logic element and a logic circuitry
TW105100899A TWI698000B (zh) 2015-01-14 2016-01-13 半導體邏輯元件及邏輯電路
CN201680006035.3A CN107431485B (zh) 2015-01-14 2016-01-13 半导体逻辑元件和逻辑电路
IL253412A IL253412B (en) 2015-01-14 2017-07-11 Semiconductor logic component and logic program of an electric circuit
US15/954,202 US10243565B2 (en) 2015-01-14 2018-04-16 Nonlinear resistor with two transistor chains
US16/173,271 US10389360B2 (en) 2015-01-14 2018-10-29 Depletion mode buried channel conductor insulator semiconductor field effect transistor
US16/447,829 US10879900B2 (en) 2015-01-14 2019-06-20 Buried channel conductor insulator semiconductor field effect transistor
JP2020121073A JP2020181991A (ja) 2015-01-14 2020-07-15 導体・絶縁体・半導体電界効果トランジスタ
US17/247,021 US11283450B2 (en) 2015-01-14 2020-11-24 Semiconductor logic element and a logic circuitry
US17/667,178 US20220166432A1 (en) 2015-01-14 2022-02-08 Complementary depletion mode logic

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FI20150011 2015-01-14
FI20150088 2015-02-05
FI20150089 2015-02-17
FI20150145 2015-05-20

Publications (1)

Publication Number Publication Date
FI20150334A true FI20150334A (fi) 2016-07-15

Family

ID=56590401

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20150334A FI20150334A (fi) 2015-01-14 2015-11-30 Paranneltu puolijohdekokoonpano

Country Status (12)

Country Link
US (6) US9948304B2 (fi)
EP (1) EP3245738A4 (fi)
JP (2) JP6737808B2 (fi)
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20150334A (fi) * 2015-01-14 2016-07-15 Artto Mikael Aurola Paranneltu puolijohdekokoonpano
US10784372B2 (en) * 2015-04-03 2020-09-22 Magnachip Semiconductor, Ltd. Semiconductor device with high voltage field effect transistor and junction field effect transistor
US10366196B2 (en) * 2016-06-22 2019-07-30 Qualcomm Incorporated Standard cell architecture for diffusion based on fin count
FI20160183L (fi) 2016-07-14 2016-07-15 Artto Mikael Aurola Parannettu puolijohdekokoonpano
US10103140B2 (en) * 2016-10-14 2018-10-16 Alpha And Omega Semiconductor Incorporated Switch circuit with controllable phase node ringing
US10553494B2 (en) * 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown resistant semiconductor apparatus and method of making same
TWI595542B (zh) * 2016-12-08 2017-08-11 旺宏電子股份有限公司 半導體結構
TWI696273B (zh) * 2019-05-15 2020-06-11 力晶積成電子製造股份有限公司 具有輔助閘的快閃記憶體暨其製作方法
EP4006963A1 (en) * 2020-11-30 2022-06-01 Samsung Electronics Co., Ltd. Semiconductor device
US11811314B2 (en) * 2020-12-30 2023-11-07 Texas Instruments Incorporated Multi-mode power converter with programmable control
US20220262945A1 (en) * 2021-02-16 2022-08-18 Semiconductor Components Industries, Llc Semiconductor devices with class iv channel region and class iii-v drift region
CN113257922B (zh) * 2021-05-13 2022-05-17 电子科技大学 一种多沟道增强型氧化镓结型场效应晶体管
CN113611751B (zh) * 2021-07-15 2023-11-10 沈阳工业大学 高低肖特基势垒无掺杂xnor逻辑数字芯片及制造方法
WO2023161389A1 (en) * 2022-02-25 2023-08-31 Analog Devices International Unlimited Company Monolithically integrated lateral bipolar device with self-aligned doped regions

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2511488A1 (de) * 1975-03-15 1976-09-23 Bosch Gmbh Robert Cmos-inverter
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load
CH631298A5 (de) 1977-01-10 1982-07-30 Kremlev V J Integrierte logische schaltung.
JPS5830742B2 (ja) * 1977-08-25 1983-07-01 松下電器産業株式会社 接合形電界効果半導体装置
JPS5947844A (ja) * 1982-09-10 1984-03-17 Nec Corp Ｃｍｏｓインバ−タ回路
DE3329874A1 (de) 1983-08-18 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Mos-inverterschaltung
JPS60254921A (ja) 1984-05-31 1985-12-16 Fujitsu Ltd 論理回路
JPH0763050B2 (ja) 1985-05-22 1995-07-05 株式会社日立製作所 半導体装置
US4701646A (en) * 1986-11-18 1987-10-20 Northern Telecom Limited Direct coupled FET logic using a photodiode for biasing or level-shifting
US4853561A (en) * 1987-06-10 1989-08-01 Regents Of The University Of Minnesota Family of noise-immune logic gates and memory cells
US4954730A (en) * 1989-04-21 1990-09-04 The Board Of Trustees Of The Leland Stanford Junior University Complementary FET circuit having merged enhancement/depletion FET output
US5225718A (en) * 1989-05-29 1993-07-06 Kabushiki Kaisha Toshiba Standard-cell type semiconductor logic lsi with logical amplitude enhancer
JP2666759B2 (ja) * 1995-02-28 1997-10-22 日本電気株式会社 半導体集積回路の入力バッファ回路
JPH09260962A (ja) * 1996-03-19 1997-10-03 Sharp Corp インバータ回路及び増幅器
JP3019805B2 (ja) * 1997-06-19 2000-03-13 日本電気株式会社 Ｃｍｏｓ論理回路
US6133754A (en) 1998-05-29 2000-10-17 Edo, Llc Multiple-valued logic circuit architecture; supplementary symmetrical logic circuit structure (SUS-LOC)
JP2001127616A (ja) 1999-10-29 2001-05-11 Oki Electric Ind Co Ltd バッファ回路
US6580293B1 (en) * 2001-12-14 2003-06-17 International Business Machines Corporation Body-contacted and double gate-contacted differential logic circuit and method of operation
CA2577198C (en) * 2004-08-20 2016-06-21 Artto Aurola Semiconductor radiation detector with a modified internal gate structure
US7592841B2 (en) 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
JP4836125B2 (ja) * 2006-04-20 2011-12-14 ルネサスエレクトロニクス株式会社 半導体装置
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
KR100790761B1 (ko) * 2006-09-29 2008-01-03 한국전자통신연구원 인버터
EP2287908A2 (en) 2007-01-24 2011-02-23 Keystone Semiconductor, Inc. Depletion-mode MOSFET circuits and applications
US7817459B2 (en) * 2007-01-24 2010-10-19 Keystone Semiconductor Inc. Depletion-mode MOSFET circuit and applications
KR101490112B1 (ko) * 2008-03-28 2015-02-05 삼성전자주식회사 인버터 및 그를 포함하는 논리회로
CN103928476A (zh) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
KR101631454B1 (ko) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
KR101522400B1 (ko) 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자
CN102414818B (zh) * 2009-04-30 2013-03-20 松下电器产业株式会社 半导体元件、半导体装置及电力变换器
JP5322169B2 (ja) * 2009-08-28 2013-10-23 独立行政法人産業技術総合研究所 炭化珪素絶縁ゲート電界効果トランジスタを用いたインバータ回路および論理ゲート回路
JP5343904B2 (ja) 2010-03-23 2013-11-13 住友電気工業株式会社 半導体装置
JP2011222105A (ja) * 2010-04-14 2011-11-04 Elpida Memory Inc 半導体装置
JP5977523B2 (ja) * 2011-01-12 2016-08-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
JP2012147278A (ja) 2011-01-13 2012-08-02 Hitachi Ltd 半導体装置
JP5364125B2 (ja) * 2011-05-20 2013-12-11 ルネサスエレクトロニクス株式会社 半導体装置
US9035363B2 (en) * 2012-02-21 2015-05-19 Robert Newton Rountree JFET ESD protection circuit for low voltage applications
JP2013219207A (ja) * 2012-04-10 2013-10-24 Sumitomo Electric Ind Ltd 電力用半導体装置およびその製造方法
JP2016063026A (ja) * 2014-09-17 2016-04-25 株式会社東芝 再構成可能な回路
FI20150334A (fi) * 2015-01-14 2016-07-15 Artto Mikael Aurola Paranneltu puolijohdekokoonpano
FI20160183L (fi) * 2016-07-14 2016-07-15 Artto Mikael Aurola Parannettu puolijohdekokoonpano

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