DE102011082289A8 - SiC-Halbleitervorrichtung und Herstellungsverfahren hierfür - Google Patents

SiC-Halbleitervorrichtung und Herstellungsverfahren hierfür Download PDF

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Publication number
DE102011082289A8
DE102011082289A8 DE102011082289A DE102011082289A DE102011082289A8 DE 102011082289 A8 DE102011082289 A8 DE 102011082289A8 DE 102011082289 A DE102011082289 A DE 102011082289A DE 102011082289 A DE102011082289 A DE 102011082289A DE 102011082289 A8 DE102011082289 A8 DE 102011082289A8
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DE
Germany
Prior art keywords
manufacturing
semiconductor device
method therefor
sic semiconductor
sic
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Application number
DE102011082289A
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English (en)
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DE102011082289B4 (de
DE102011082289A1 (de
Inventor
Toshimasa Yamamoto
Yukihiko Watanabe
Tsuyoshi Ishikawa
Narumasa Soejima
Jun Morimoto
Masahiro Sugimoto
Hidefumi Takaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Original Assignee
Denso Corp
Toyota Motor Corp
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Publication of DE102011082289A1 publication Critical patent/DE102011082289A1/de
Publication of DE102011082289A8 publication Critical patent/DE102011082289A8/de
Application granted granted Critical
Publication of DE102011082289B4 publication Critical patent/DE102011082289B4/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/086—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102011082289.5A 2010-09-14 2011-09-07 Verfahren zur Herstellung einer SiC-Halbleitervorrichtung Active DE102011082289B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-205789 2010-09-14
JP2010205789A JP5732790B2 (ja) 2010-09-14 2010-09-14 炭化珪素半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
DE102011082289A1 DE102011082289A1 (de) 2012-04-05
DE102011082289A8 true DE102011082289A8 (de) 2012-06-14
DE102011082289B4 DE102011082289B4 (de) 2023-04-06

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DE102011082289.5A Active DE102011082289B4 (de) 2010-09-14 2011-09-07 Verfahren zur Herstellung einer SiC-Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US8710586B2 (de)
JP (1) JP5732790B2 (de)
CN (1) CN102403338B (de)
DE (1) DE102011082289B4 (de)

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JP6284292B2 (ja) * 2012-04-03 2018-02-28 株式会社デンソー 炭化珪素半導体装置
JP6265594B2 (ja) 2012-12-21 2018-01-24 ラピスセミコンダクタ株式会社 半導体装置の製造方法、及び半導体装置
JP6018501B2 (ja) 2012-12-27 2016-11-02 株式会社東芝 半導体装置及びその製造方法
US9240476B2 (en) * 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
JP2014236120A (ja) * 2013-06-03 2014-12-15 トヨタ自動車株式会社 半導体装置及びその製造方法
US9490328B2 (en) 2013-06-26 2016-11-08 Hitachi, Ltd. Silicon carbide semiconductor device and manufacturing method of the same
JP6183200B2 (ja) * 2013-12-16 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6256148B2 (ja) * 2014-03-27 2018-01-10 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
EP3133339A4 (de) 2014-03-28 2017-11-01 Kabushiki Kaisha Toshiba Beleuchtungsvorrichtung
US9577073B2 (en) 2014-12-11 2017-02-21 Infineon Technologies Ag Method of forming a silicon-carbide device with a shielded gate
JP6623772B2 (ja) * 2016-01-13 2019-12-25 富士電機株式会社 炭化珪素半導体装置の製造方法
JP6470214B2 (ja) * 2016-03-16 2019-02-13 株式会社東芝 半導体装置
JP2017188607A (ja) * 2016-04-07 2017-10-12 トヨタ自動車株式会社 ＳｉＣ基板を利用する半導体装置
JP6848317B2 (ja) * 2016-10-05 2021-03-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7182850B2 (ja) * 2016-11-16 2022-12-05 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6797005B2 (ja) * 2016-11-24 2020-12-09 ルネサスエレクトロニクス株式会社 半導体装置
CN108257859B (zh) * 2016-12-28 2021-09-03 全球能源互联网研究院 一种栅氧化层的制备方法及mosfet功率器件
CN108257861B (zh) * 2016-12-28 2021-09-21 全球能源互联网研究院 一种栅氧化层的制备方法及mos功率器件
JP6930113B2 (ja) * 2017-01-20 2021-09-01 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2018085531A (ja) * 2018-01-05 2018-05-31 ローム株式会社 半導体装置
JP7389239B2 (ja) * 2019-09-10 2023-11-29 コリア エレクトロテクノロジー リサーチ インスティテュート トレンチゲート型ＳｉＣＭＯＳＦＥＴデバイス及びその製造方法
US11563101B2 (en) * 2020-07-07 2023-01-24 Wolfspeed, Inc. Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices
US11004940B1 (en) * 2020-07-31 2021-05-11 Genesic Semiconductor Inc. Manufacture of power devices having increased cross over current
CN112086361A (zh) * 2020-09-27 2020-12-15 江苏东海半导体科技有限公司 一种SiC沟槽MOSFET及其制造工艺
EP4071786A1 (de) * 2021-04-06 2022-10-12 Hitachi Energy Switzerland AG Verfahren zur formung eines ohmschen kontakts auf einem halbleiterbauelement mit breiter bandlücke und halbleiterbauelement mit breiter bandlücke
CN113658869B (zh) * 2021-08-16 2023-07-25 成都京东方光电科技有限公司 薄膜晶体管及其制作方法、显示器件

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US6445037B1 (en) * 2000-09-28 2002-09-03 General Semiconductor, Inc. Trench DMOS transistor having lightly doped source structure
JP4802378B2 (ja) 2001-03-12 2011-10-26 株式会社デンソー 炭化珪素半導体装置の製造方法
JP4024503B2 (ja) * 2001-09-19 2007-12-19 株式会社東芝 半導体装置及びその製造方法
US6906350B2 (en) * 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
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SE0303106D0 (sv) 2003-11-21 2003-11-21 Infineon Technologies Ag Ldmos transistor device, integrated circuit, and fabrication method thereof
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JP2005303010A (ja) 2004-04-12 2005-10-27 Matsushita Electric Ind Co Ltd 炭化珪素素子及びその製造方法
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JP2007059722A (ja) * 2005-08-25 2007-03-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
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JP5499449B2 (ja) 2008-07-29 2014-05-21 株式会社デンソー 炭化珪素半導体装置およびその製造方法
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Also Published As

Publication number Publication date
US20120061682A1 (en) 2012-03-15
CN102403338B (zh) 2014-08-20
US8710586B2 (en) 2014-04-29
DE102011082289B4 (de) 2023-04-06
DE102011082289A1 (de) 2012-04-05
CN102403338A (zh) 2012-04-04
JP2012064658A (ja) 2012-03-29
JP5732790B2 (ja) 2015-06-10

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