JP6797005B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6797005B2 JP6797005B2 JP2016227933A JP2016227933A JP6797005B2 JP 6797005 B2 JP6797005 B2 JP 6797005B2 JP 2016227933 A JP2016227933 A JP 2016227933A JP 2016227933 A JP2016227933 A JP 2016227933A JP 6797005 B2 JP6797005 B2 JP 6797005B2
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Description
<本実施の形態1による半導体装置の構成>
本実施の形態1による半導体装置の構成について、図1を用いて説明する。
本実施の形態1による半導体装置のセル形成領域の構成について、図2〜図4を用いて説明する。
次に、本実施の形態1による半導体装置の製造方法について、図5〜図10を用いて説明する。
次に、本発明者らが検討した比較例による半導体装置のセル形成領域の構成について、図11および図12を用いて説明する。
次に、比較例による半導体装置の特長について、図13および図14を用いて説明する。
一方、比較例による半導体装置は、課題も有する。以下では、比較例による半導体装置の課題について説明する。
次に、本実施の形態1による半導体装置の主要な特長と効果について、図21および図22を用いて説明する。
本実施の形態1の変形例による半導体装置に備わるIE型トレンチゲートIGBTの構成について、図23および図24を用いて説明する。
本実施の形態1の変形例による半導体装置でも、前述の実施の形態1による半導体装置と同様に、セル形成領域AR1には、平面視において、複数のn+型エミッタ領域NEが千鳥配置されている。
<比較例による半導体装置の構成と課題>
まず、本発明者らが検討した比較例による半導体装置のセル形成領域の構成について、図25および図26を用いて説明する。
以下、セル形成領域AR1のX軸方向の端部領域に設けられたダミーセル形成領域DAを有効に活用することのできる、本実施の形態2による半導体装置のセル形成領域の構成について、図27および図28を用いて説明する。
本実施の形態2による半導体装置の第1例では、セル形成領域AR1のX軸方向の端部に位置する端部領域DA1に、複数のn+型エミッタ領域NEを配置することにより、端部領域DA1を有効に活用することができる。ただし、端部領域DA1において、電流集中が起きないようにするため、端部領域DA1に配置される複数のn+型エミッタ領域NEの密度は、セル形成領域AR1の活性領域CAに配置されるn+型エミッタ領域NEの密度よりも低くする必要がある。すなわち、セル形成領域AR1の端部領域DA1に配置される複数のn+型エミッタ領域NEのY軸方向の間隔SD1は、セル形成領域AR1の活性領域CAに配置される複数のn+型エミッタ領域NEのY軸方向の間隔S1よりも大きくする必要がある。
<本実施の形態3によるモジュールの構成>
本実施の形態3では、前述の実施の形態1による半導体装置を備えた半導体チップを複数個有し、当該複数個の半導体チップが互いに並列に接続されたモジュールである例について説明する。
前述したように、本実施の形態3のモジュールであるIGBTモジュール10に含まれる複数のIGBTチップ12の各々として、前述の実施の形態1による半導体装置を用いることができる。
2 寄生MOSFET
10、10H、10L IGBTモジュール
11 ダイオードモジュール
12 IGBTチップ
13 ダイオード
AR1 セル形成領域
AR2 ゲート配線引き出し領域
AR3 領域
BP1 第1寄生pnpバイポーラトランジスタ
BP2 第2寄生pnpバイポーラトランジスタ
BR 領域
CA 活性領域
CE コレクタ電極
CF 導電性膜
CHP 半導体チップ
CL p+型コレクタ領域
CP 接続電極
CR1、CR2 変位電流
CT コンタクト溝
CTC1、CTC2 制御回路
CTE 接続電極
DA ダミーセル形成領域
DA1、DA2 端部領域
EE エミッタ電極
EP エミッタパッド
FPF 絶縁膜
GE ゲート電極
GI ゲート絶縁膜
GL ゲート配線
GND 接地電位
GP ゲートパッド
GTG 接続電極
IF 絶縁膜
IL 層間絶縁膜
INV インバータ
LCh ハイブリッドセル領域(アクティブセル領域)
LCh1、LCh2 ハイブリッドサブセル領域
LCi インアクティブセル領域
MOT モータ
ND n−型ドリフト領域
NE n+型エミッタ領域
NHB n型ホールバリア領域
Ns n型フィールドストップ領域
OP1、OP2 開口部
PB p型ボディ領域
PBC、PBCp p+型ボディコンタクト領域
PF、PFp p型フローティング領域
PH1 U相
PH2 V相
PH3 W相
PLP p+型ラッチアップ防止領域
PM1、PM2 パワーモジュール
PR p+型半導体領域
PR1 素子部
PR2 介在部
PT101 電流経路
Sa 上面
Sb 下面
SD1、SD2 間隔
SLn、SLp 半導体層
SS 半導体基板
T1、T2、T3 トレンチ
TA ターミネーション領域
TG1、TG2、TG3 トレンチ電極
TGp 端部トレンチ電極
TGx エミッタ接続部
TGz トレンチ電極
TM1、TM2 入力端子
VCC 電源電位
Wh、Wh1、Wh2、Wi、Wp、Wcp 幅
Claims (11)
- 第1主面および前記第1主面と反対側の第2主面を有する半導体基板と、
前記半導体基板の内部に形成された第1導電型の第1半導体層と、
前記第1半導体層と前記第2主面との間の前記半導体基板に形成された、前記第1導電型と異なる第2導電型の第2半導体層と、
平面視において、前記半導体基板の中央部に設けられたセル形成領域と、
平面視において、前記セル形成領域の外側に設けられたターミネーション領域と、
前記セル形成領域の前記半導体基板の前記第1主面側に、平面視において、第1方向に互いに離間して設けられ、前記第1方向と直交する第2方向に延在する複数の素子部と、
前記セル形成領域の前記半導体基板の前記第1主面側に、平面視において、前記複数の素子部のそれぞれの間に設けられた複数の介在部と、
を備え、
前記複数の素子部のそれぞれは、
前記第1主面から前記第1半導体層の途中まで達し、前記素子部と前記介在部との一方の境部に設けられ、平面視において、前記第2方向に延在する第1溝と、
前記第1主面から前記第1半導体層の途中まで達し、前記素子部と前記介在部との他方の境部に設けられ、平面視において、前記第2方向に延在する第2溝と、
前記第1主面から前記第1半導体層の途中まで達し、前記第1溝と前記第2溝との間に設けられ、平面視において、前記第2方向に延在する第3溝と、
前記第1溝の内部に第1絶縁膜を介して埋め込まれた第1トレンチ電極と、
前記第2溝の内部に第2絶縁膜を介して埋め込まれた第2トレンチ電極と、
前記第3溝の内部に第3絶縁膜を介して埋め込まれた第3トレンチ電極と、
前記第1溝と前記第3溝との間の前記半導体基板の前記第1主面側に形成され、前記第1絶縁膜および前記第3絶縁膜に接触する、前記第2導電型の第1半導体領域と、
前記第2溝と前記第3溝との間の前記半導体基板の前記第1主面側に形成され、前記第2絶縁膜および前記第3絶縁膜に接触する、前記第2導電型の第2半導体領域と、
前記第1半導体領域の途中まで達し、前記第1溝と前記第3溝との間に設けられ、平面視において、前記第2方向に延在する第1接続部と、
前記第2半導体領域の途中まで達し、前記第2溝と前記第3溝との間に設けられ、平面視において、前記第2方向に延在する第2接続部と、
前記第1接続部と前記第3溝との間および前記第2接続部と前記第3溝との間の前記半導体基板の前記第1主面側に、前記第1接続部および前記第2接続部の深さより浅く形成され、前記第3絶縁膜に接触し、平面視において、前記第2方向に互いに一定の間隔で配置された複数の前記第1導電型の第3半導体領域と、
を有し、
前記複数の介在部のそれぞれは、
前記第1主面から前記第1半導体層に達する、前記第2導電型の第4半導体領域、
を有し、
前記セル形成領域は、
平面視において、前記セル形成領域の中央部に位置する第1領域と、
平面視において、前記第1領域と前記ターミネーション領域との間に位置する第2領域と、
を有し、
前記第1領域の前記素子部に形成された複数の前記第3半導体領域は、前記第2方向に第1間隔で配置され、前記第2領域の前記素子部に形成された複数の前記第3半導体領域は、前記第2方向に第2間隔で配置され、前記第2間隔は、前記第1間隔よりも大きく、
前記第1領域では、前記介在部を挟んで、前記第1方向に互いに隣り合う2つの前記素子部において、一方の前記素子部に形成された複数の前記第3半導体領域のうち、前記第2方向に互いに隣り合う2つの前記第3半導体領域に挟まれた領域の前記第1方向に、他方の前記素子部に形成された複数の前記第3半導体領域のうち、1つの前記第3半導体領域が配置されている、半導体装置。 - 請求項1記載の半導体装置において、
前記第2領域では、前記介在部を挟んで、前記第1方向に互いに隣り合う2つの前記素子部において、一方の前記素子部に形成された複数の前記第3半導体領域のうち、前記第2方向に互いに隣り合う2つの前記第3半導体領域に挟まれた領域の前記第1方向に、他方の前記素子部に形成された複数の前記第3半導体領域のうち、1つの前記第3半導体領域が配置されている、半導体装置。 - 請求項2記載の半導体装置において、
前記第1領域では、前記第1方向に互いに隣り合う2つの前記素子部において、一方の前記素子部に形成された複数の前記第3半導体領域のうち、前記第2方向に互いに隣り合う2つの前記第3半導体領域の前記第1間隔の半分の位置の前記第1方向に、他方の前記素子部に形成された複数の第3半導体領域のうち、1つの前記第3半導体領域が配置され、
前記第2領域では、前記第1方向に互いに隣り合う2つの前記素子部において、一方の前記素子部に形成された複数の前記第3半導体領域のうち、前記第2方向に互いに隣り合う2つの前記第3半導体領域の前記第2間隔の半分の位置の前記第1方向に、他方の前記素子部に形成された複数の第3半導体領域のうち、1つの前記第3半導体領域が配置されている、半導体装置。 - 請求項2記載の半導体装置において、
前記第1領域および前記第2領域ではそれぞれ、平面視において、複数の前記第3半導体領域は千鳥配置されている、半導体装置。 - 請求項2記載の半導体装置において、
前記第1領域および前記第2領域ではそれぞれ、平面視において、三角形の各頂点に前記第3半導体領域が位置する基本パターンが連続して配列されている、半導体装置。 - 請求項2記載の半導体装置において、
前記第1領域および前記第2領域ではそれぞれ、前記第1方向に互いに隣り合う2つの前記素子部のそれぞれに形成された複数の前記第3半導体領域は、前記第1方向に互いに隣り合う2つの前記素子部の間に位置する前記介在部を挟んで非対称に配置されている、半導体装置。 - 請求項1記載の半導体装置において、
前記第2領域では、前記第1方向に互いに隣り合う2つの前記素子部のそれぞれに形成された複数の前記第3半導体領域は、前記第1方向に互いに隣り合う2つの前記素子部の間に位置する前記介在部を挟んで対称に配置されている、半導体装置。 - 請求項7記載の半導体装置において、
前記第1領域では、前記第1方向に互いに隣り合う2つの前記素子部において、一方の前記素子部に形成された複数の前記第3半導体領域のうち、前記第2方向に互いに隣り合う2つの前記第3半導体領域の前記第1間隔の半分の位置の前記第1方向に、他方の前記素子部に形成された複数の第3半導体領域のうち、1つの前記第3半導体領域が配置されている、半導体装置。 - 請求項7記載の半導体装置において、
前記第1領域では、平面視において、複数の前記第3半導体領域は千鳥配置されている、半導体装置。 - 請求項7記載の半導体装置において、
前記第1領域では、平面視において、三角形の各頂点に前記第3半導体領域が位置する基本パターンが連続して配列されている、半導体装置。 - 請求項7記載の半導体装置において、
前記第1領域では、前記第1方向に互いに隣り合う2つの前記素子部のそれぞれに形成されている前記複数の第3半導体領域は、前記第1方向に互いに隣り合う2つの前記素子部の間に位置する前記介在部を挟んで非対称に配置されている、半導体装置。
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