CN112086361A - 一种SiC沟槽MOSFET及其制造工艺 - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及功率器件技术领域,具体涉及一种SiC沟槽MOSFET及其制造工艺,旨在解决现有技术中因SiC硬度过高,高温推结对掺杂杂质的再分布基本无效果形成的缺陷,其技术要点在于:选用SiC晶圆衬底,并在所述晶圆衬底外延上进行P‑well的注入。淀积第一层掩膜,在晶圆外延表面注入N+Source;去除第一层掩膜,淀积第二层掩膜,并进行P+注入。去除第二层掩膜,然后进行高温退火;淀积第三层掩膜,通过刻蚀打开所述第三层掩膜,并进行栅氧氧化形成栅氧化层及多晶沉积。上述一种SiC沟槽MOSFET制造工艺,先进行掺杂,然后在进行栅氧与多晶的制造,因沟道为垂直结构,对光刻精度要求较低,制造工艺步骤较少,且有效地降低了制造过程的复杂程度。
Description
技术领域
本发明涉及功率器件技术领域,具体涉及一种SiC沟槽MOSFET制造工艺。
背景技术
碳化硅(SiC)属于第三代半导体材料,具有1X1共价键的硅和碳化合物,其莫氏硬度为13,仅次于钻石(15)和碳化硼(14)。SiC在天然环境下非常罕见,最早是人们在太阳系刚诞生的46亿年前的陨石中,发现了少量这种物质,所以它又被称为“经历46亿年时光之旅的半导体材料”。
SiC作为半导体材料具有优异的性能,尤其是用于功率转换和控制的功率元器件。与传统硅器件相比可以实现低导通电阻、高速开关和耐高温高压工作,因此在电源、汽车、铁路、工业设备和家用消费电子设备中倍受欢迎。
目前SiC通过人工合成可以制造,其也通常应用于沟槽MOSFET的制造,但是由于其材质异常坚硬,制作沟槽MOSFET器件时,高温推结对掺杂杂质的再分布基本无效果。
发明内容
因此,本发明要解决的技术问题在于克服现有技术中因SiC硬度过高,制作沟槽MOSFET器件时,高温推结对掺杂杂质的再分布基本无效果形成的缺陷,从而提供一种SiC沟槽MOSFET制造工艺。
本发明的上述技术目的是通过以下技术方案得以实现的:
一种SiC沟槽MOSFET制造工艺,包含以下步骤:
S1:选用SiC晶圆衬底,并在所述晶圆衬底外延上进行P-well的注入。
S2:淀积生长第一层掩膜,并刻蚀第一层掩膜,然后注入N+source;
S3:去除第一层掩膜,淀积生长第二层掩膜,并进行P+注入。
S4:去除第二层掩膜,然后进行高温退火,以激活掺杂;
S5:淀积生长第三层掩膜,通过刻蚀打开所述第三层掩膜,再进行刻蚀,形成沟槽结构并进行栅氧氧化形成栅氧化层及多晶沉积。
S6:对多晶硅进行光刻、刻蚀,保留沟槽内的多晶硅。
S7:在晶圆外延上进行金属层的生长、光刻及刻蚀形成源极及栅极。
S8:制作背面金属。
在本申请的一些实施方式中,所述第一层掩膜为氧化硅-氮化硅-氧化硅结构的硬掩膜板,第一层掩膜淀积完成后,通过干法刻蚀去除第一层掩膜沟槽处的硬掩膜,注入形成源区N+source。
在本申请的一些实施方式中,所述栅氧化层的形成是通过以下步骤实现的:在晶圆外延生长牺牲氧化膜,刻蚀去除牺牲氧化膜,在沟槽区的沟槽壁形成栅氧化层。
在本申请的一些实施方式中,所述金属层的生长是通过铝溅射得到的。
本申请还提供了一种SiC沟槽MOSFET,使用上述所述一种SiC沟槽MOSFET制造工艺制造得到。
本申请所提供的一种SiC沟槽MOSFET制造工艺,制造过程中,先进行掺杂,然后在进行栅氧与多晶的制造,因沟道为垂直结构,对光刻精度要求较低,制造工艺步骤较少,且有效地降低了制造过程的复杂程度。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明的一种实施方式的一种SiC沟槽MOSFET制造工艺的S1和S2示意图;
图2为本发明的一种实施方式的一种SiC沟槽MOSFET制造工艺的S3-S5示意图;
图3为本发明的一种实施方式的一种SiC沟槽MOSFET制造工艺的S6示意图;
图4为本发明的一种实施方式的一种SiC沟槽MOSFET制造工艺的S7-S8示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
一种SiC沟槽MOSFET制造工艺,包含以下步骤:
S1:请参阅图1,选用SiC晶圆衬底,并在所述晶圆衬底外延上进行P-well的注入。
S2:请参阅图1,淀积生长第一层掩膜,并刻蚀第一层掩膜,然后注入N+source;
在一实施方式中,所述第一层掩膜为氧化硅-氮化硅-氧化硅结构的硬掩膜板,第一层掩膜淀积完成后,通过干法刻蚀去除第一层掩膜沟槽处的硬掩膜,注入形成源区N+source。
S3:请参阅图2,去除第一层掩膜,淀积生长第二层掩膜,并进行P+注入。
S4:去除第二层掩膜,然后进行高温退火,以激活掺杂;
S5:请参阅图2,淀积生长第三层掩膜,通过刻蚀打开所述第三层掩膜,再进行刻蚀,形成沟槽结构并进行栅氧氧化及多晶沉积。
在一实施方式中,所述栅氧化层的形成是通过以下步骤实现的:在晶圆外延上生长牺牲氧化膜,刻蚀去除牺牲氧化膜,在沟槽区的沟槽壁形成栅氧化层。
S6:请参阅图3,对多晶硅进行光刻、刻蚀,保留沟槽内的多晶硅。
S7:请参阅图4,在晶圆外延上进行金属层的生长、光刻及刻蚀形成源极及栅极。
在一实施方式中,所述金属层的生长是通过铝溅射得到的。
S8:请参阅图4,制作背面金属。
一种SiC沟槽MOSFET,通过上述工艺制作得到。
本申请所提供的一种SiC沟槽MOSFET制造工艺,其先进行掺杂,然后再进行栅氧与多晶的制造,因沟道为垂直结构,对光刻精度要求较低,制造工艺步骤较少,且有效地降低了制造过程的复杂程度。
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。
Claims (5)
1.一种SiC沟槽MOSFET制造工艺,其特征在于:包含以下步骤:
S1:选用SiC晶圆衬底,并在所述晶圆衬底外延上进行P-well的注入;
S2:淀积生长第一层掩膜,并刻蚀第一层掩膜,在晶圆外延表面注入N+source;
S3:去除第一层掩膜,淀积生长第二层掩膜,刻蚀后进行P+注入;
S4:去除第二层掩膜,然后进行高温退火,以激活掺杂;
S5:淀积生长第三层掩膜,通过刻蚀打开所述第三层掩膜后再进行刻蚀,形成沟槽结构,再进行栅氧氧化形成栅氧化层及多晶沉积;
S6:对多晶硅进行光刻、刻蚀,保留沟槽内的多晶硅;
S7:在晶圆外延上进行金属层的生长、光刻及刻蚀形成源极及栅极;
S8:制作背面金属。
2.根据权利要求1所述的一种SiC沟槽MOSFET制造工艺,其特征在于:所述第一层掩膜为氧化硅-氮化硅-氧化硅结构的硬掩膜板,第一层掩膜淀积完成后,通过干法刻蚀去除第一层掩膜沟槽处的硬掩膜,以形成源区。
3.根据权利要求2所述的一种SiC沟槽MOSFET制造工艺,其特征在于:所述栅氧化层的形成是通过以下步骤实现的:在晶圆外延上生长牺牲氧化膜,刻蚀去除牺牲氧化膜,在沟槽区的沟槽壁形成栅氧化层。
4.根据权利要求3所述的一种SiC沟槽MOSFET制造工艺,其特征在于:所述金属层的生长是通过铝溅射得到的。
5.一种SiC沟槽MOSFET,其特征在于:使用权利要求1-4任一一项所述一种SiC沟槽MOSFET制造工艺制造得到。
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CN105047721A (zh) * | 2015-08-26 | 2015-11-11 | 国网智能电网研究院 | 一种碳化硅沟槽栅功率MOSFETs器件及其制备方法 |
CN105633168A (zh) * | 2015-12-31 | 2016-06-01 | 国网智能电网研究院 | 一种集成肖特基二极管的SiC沟槽型MOSFET器件及其制造方法 |
CN107785438A (zh) * | 2017-11-27 | 2018-03-09 | 北京品捷电子科技有限公司 | 一种SiC基UMOSFET的制备方法及SiC基UMOSFET |
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CN1977386A (zh) * | 2004-06-22 | 2007-06-06 | 克里公司 | 碳化硅器件及其制造方法 |
US20120061682A1 (en) * | 2010-09-14 | 2012-03-15 | Toyota Jidosha Kabushiki Kaisha | Sic semiconductor device and method for manufacturing the same |
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