CN221037722U - Temperature detection circuit - Google Patents
Temperature detection circuit Download PDFInfo
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- CN221037722U CN221037722U CN202323182785.2U CN202323182785U CN221037722U CN 221037722 U CN221037722 U CN 221037722U CN 202323182785 U CN202323182785 U CN 202323182785U CN 221037722 U CN221037722 U CN 221037722U
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Abstract
The present utility model relates to the field of integrated circuits, and in particular, to a temperature detection circuit. The circuit comprises a zener diode, a plurality of current sources, a plurality of resistors and a plurality of triodes. The base of the NPN transistor Q0 is connected to a voltage dividing resistor to form a VBE0 (triode Q0 base-emitter voltage) multiplier circuit, and the output voltage Vout is a voltage with a positive temperature coefficient because the zener diode voltage has good temperature stability and VBE is a voltage with a negative temperature coefficient. Compared with the traditional structure, the temperature detection circuit has the advantages of higher precision, easiness in integration, simple structure and the like.
Description
Technical Field
The present utility model relates to the field of integrated circuits, and in particular, to a temperature detection circuit.
Background
Temperature detection circuits are used in many applications such as power management chips, driver chips, etc., and most commonly used for over-temperature protection.
A traditional temperature detection circuit structure is shown in a figure I, wherein the input end of a current source I0 is connected with VDD, the output end of the current source I0 is connected with one end of a thermistor RT, and the other end of the thermistor RT is grounded as the output end of the temperature detection circuit. The structure has lower precision and is not easy to integrate.
Another conventional temperature detection circuit structure is shown in fig. two, wherein the input end of the current source I1 is connected with VDD, and the output end is connected with the anode of the diode D0 and one end of the resistor R0; the resistor R0 is connected with the inverting output end of the operational amplifier OPA0 and is connected with one end of the resistor R1; the non-inverting input end of the operational amplifier is connected with the signal Vref, and the output end of the operational amplifier is connected with the other end of the resistor R1 and is used as the output end of the temperature detection circuit; the cathode of the diode D0 is grounded. The temperature detection circuit has a complex structure and relatively high power consumption.
Disclosure of utility model
The utility model aims to solve the problems in the background technology, and provides a temperature detection circuit which has the advantages of simple structure and lower power consumption and can ensure higher precision.
According to the technical scheme, the temperature detection circuit comprises a zener diode, a plurality of current sources, a plurality of resistors and a plurality of triodes, wherein the base electrode of an NPN triode Q0 is connected with a voltage dividing resistor to form a VBE0 multiplication circuit;
the zener diode voltage is temperature stable, VBE is a voltage with a negative temperature coefficient, and the output voltage Vout is a voltage with a positive temperature coefficient.
Preferably, the current source comprises I2, I3; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises an NPN triode Q0;
The input end of the current source I2 is connected with VDD, and the collector electrode of the NPN triode Q0 is connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
An emitter of the NPN triode Q0 is connected with the other end of the resistor R3 and the input end of the current source I3 and is used as an output end of the temperature detection circuit;
the anode of the zener diode D1 and the output terminal of the current source I3 are grounded.
Preferably, the current source comprises I2, I3, I4; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises NPN type triodes Q0 and Q1;
The input end of the current source I2 is connected with VDD, and the collectors of NPN triodes Q0, Q1 are connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
The emitter of the NPN triode Q0 is connected with the other end of the resistor R3, the input end of the current source I3 and the base of the NPN triode Q1;
an emitter of the NPN triode Q1 is connected with an input end of the current source I4 and is used as an output end of the temperature detection circuit;
The anode of the zener diode D1 and the output ends of the current sources I3 and I4 are grounded;
The current sources I2, I3, I4 may all be replaced by resistors.
NPN transistor Q1 may be replaced with an NMOS transistor.
Preferably, the current source comprises I2, I3, I5, I6; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises NPN triodes Q0, Q2 and Q3;
The input ends of the current sources I2, I5 and I6 are connected with VDD, and the collector electrode of the NPN triode Q3 is connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
The other end of the resistor R3 is connected with the emitters of the NPN triodes Q0, Q2 and Q3 and the input end of the current source I3 and is used as the output end of the temperature detection circuit;
The base electrode of the NPN triode Q2 is connected with the output end of the current source I5 and the collector electrode of the NPN triode Q0;
the base electrode of the NPN triode Q3 is connected with the output end of the current source I6 and the collector electrode of the NPN triode Q2;
the anode of the zener diode D1 and the output terminal of the current source I3 are grounded.
The current sources I2, I3, I5, I6 may all be replaced by resistors.
NPN type triodes Q2 and Q3 can be replaced by NMOS transistors.
Compared with the prior art, the utility model has the following beneficial technical effects:
In the utility model, the base electrode of the NPN triode Q0 is connected with a voltage dividing resistor to form a VBE0 (triode Q0 base-emitter voltage) multiplication circuit, and the voltage of the zener diode has good temperature stability, and meanwhile, the VBE is a voltage with a negative temperature coefficient, so that the output voltage Vout is a voltage with a positive temperature coefficient. Compared with the traditional structure, the temperature detection circuit has the advantages of higher precision, easiness in integration, simple structure and the like.
Drawings
FIG. 1 is a schematic diagram of a conventional temperature detection circuit;
FIG. 2 is a schematic diagram of another conventional temperature detection circuit;
FIG. 3 is a schematic diagram of a temperature detecting circuit according to the present application;
FIG. 4 is a schematic diagram of a temperature detecting circuit according to the present application;
FIG. 5 is a schematic diagram of a temperature detecting circuit according to the present application;
FIG. 6 is a diagram showing the relationship between the voltage VBE of the temperature detection circuit and temperature;
FIG. 7 is a schematic diagram showing the relationship between the output voltage of the temperature detecting circuit and the temperature.
Detailed Description
The utility model provides a temperature detection circuit, which comprises a zener diode, a plurality of current sources, a plurality of resistors and a plurality of triodes, wherein the base electrode of an NPN triode Q0 is connected with a divider resistor to form a VBE0 multiplication circuit;
the zener diode voltage is temperature stable, VBE is a voltage with a negative temperature coefficient, and the output voltage Vout is a voltage with a positive temperature coefficient.
Example 1
As shown in fig. 3, the present utility model provides a temperature detection circuit, wherein the current source includes I2 and I3; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises an NPN triode Q0;
The input end of the current source I2 is connected with VDD, and the collector electrode of the NPN triode Q0 is connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
An emitter of the NPN triode Q0 is connected with the other end of the resistor R3 and the input end of the current source I3 and is used as an output end of the temperature detection circuit;
the anode of the zener diode D1 and the output terminal of the current source I3 are grounded.
In this circuit structure, the potential of the cathode of the zener diode D1 is Vz, the base potential of the NPN transistor Q0 is generated by dividing the voltage by the resistors R2, R3, and the formula of the Vout voltage is:
the structure is the simplest and is convenient to be matched with other circuits.
Example 2
As shown in fig. 4, the present utility model provides a temperature detection circuit, wherein the current source includes I2, I3, I4; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises NPN type triodes Q0 and Q1;
The input end of the current source I2 is connected with VDD, and the collectors of NPN triodes Q0, Q1 are connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
The emitter of the NPN triode Q0 is connected with the other end of the resistor R3, the input end of the current source I3 and the base of the NPN triode Q1;
an emitter of the NPN triode Q1 is connected with an input end of the current source I4 and is used as an output end of the temperature detection circuit;
The anode of the zener diode D1 and the output ends of the current sources I3 and I4 are grounded;
The current sources I2, I3, I4 may all be replaced by resistors.
NPN transistor Q1 may be replaced with an NMOS transistor.
In the circuit structure, the potential of the cathode of the zener diode D1 is Vz, the base potential of the NPN transistor Q0 is generated by dividing the voltage by the resistors R2 and R3, the base of the NPN transistor Q1 is connected to the emitter of the NPN transistor Q0, and the emitter of the NPN transistor Q1 is used as the output end of the circuit structure. The formula for calculating the Vout voltage at this time is:
The structure has certain load capacity and can be properly matched with load.
Example 3
As shown in fig. 5, the present utility model provides a temperature detection circuit, wherein the current source includes I2, I3, I5, I6; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises NPN triodes Q0, Q2 and Q3;
The input ends of the current sources I2, I5 and I6 are connected with VDD, and the collector electrode of the NPN triode Q3 is connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
The other end of the resistor R3 is connected with the emitters of the NPN triodes Q0, Q2 and Q3 and the input end of the current source I3 and is used as the output end of the temperature detection circuit;
The base electrode of the NPN triode Q2 is connected with the output end of the current source I5 and the collector electrode of the NPN triode Q0;
the base electrode of the NPN triode Q3 is connected with the output end of the current source I6 and the collector electrode of the NPN triode Q2;
the anode of the zener diode D1 and the output terminal of the current source I3 are grounded.
The current sources I2, I3, I5, I6 may all be replaced by resistors.
NPN type triodes Q2 and Q3 can be replaced by NMOS transistors.
In this circuit structure, the potential of the cathode of the zener diode D1 is Vz, the base potential of the NPN transistor Q0 is generated by the voltage division of the resistors R2 and R3, and the emitters of the NPN transistors Q2 and Q3 are directly connected to the emitter of the NPN transistor Q0, so the calculation of Vout is similar to that of embodiment 1, and the calculation formula of Vout voltage at this time is:
The structure has the strongest load capacity, and the load change can not cause the change of output voltage.
The utility model comprises a zener diode, a plurality of current sources, a plurality of resistors and a plurality of triodes. The base of the NPN transistor Q0 is connected to a voltage dividing resistor to form a VBE0 (triode Q0 base-emitter voltage) multiplier circuit, and the output voltage Vout is a voltage with a positive temperature coefficient because the zener diode voltage has good temperature stability and VBE is a voltage with a negative temperature coefficient. Compared with the traditional structure, the temperature detection circuit has the advantages of higher precision, easiness in integration, simple structure and the like.
The embodiments of the present utility model have been described in detail with reference to the drawings, but the present utility model is not limited thereto, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present utility model.
Claims (8)
1. The temperature detection circuit comprises a zener diode, a plurality of current sources, a plurality of resistors and a plurality of triodes, and is characterized in that the base electrode of an NPN triode Q0 is connected with a divider resistor to form a VBE0 multiplication circuit;
the zener diode voltage is temperature stable, VBE is a voltage with a negative temperature coefficient, and the output voltage Vout is a voltage with a positive temperature coefficient.
2. A temperature sensing circuit according to claim 1, wherein the current source comprises I2, I3; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises an NPN triode Q0;
The input end of the current source I2 is connected with VDD, and the collector electrode of the NPN triode Q0 is connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
An emitter of the NPN triode Q0 is connected with the other end of the resistor R3 and the input end of the current source I3 and is used as an output end of the temperature detection circuit;
the anode of the zener diode D1 and the output terminal of the current source I3 are grounded.
3. A temperature sensing circuit according to claim 1, wherein the current source comprises I2, I3, I4; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises NPN type triodes Q0 and Q1;
The input end of the current source I2 is connected with VDD, and the collectors of NPN triodes Q0, Q1 are connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
The emitter of the NPN triode Q0 is connected with the other end of the resistor R3, the input end of the current source I3 and the base of the NPN triode Q1;
an emitter of the NPN triode Q1 is connected with an input end of the current source I4 and is used as an output end of the temperature detection circuit;
The anode of the zener diode D1 and the output terminals of the current sources I3, I4 are grounded.
4. A temperature sensing circuit according to claim 3, wherein the current sources I2, I3, I4 are each replaced by a resistor.
5. A temperature sensing circuit according to claim 3, wherein NPN transistor Q1 is replaced by an NMOS transistor.
6. A temperature sensing circuit according to claim 1, wherein the current source comprises I2, I3, I5, I6; the zener diode comprises D1; the resistor comprises R2 and R3; the triode comprises NPN triodes Q0, Q2 and Q3;
The input ends of the current sources I2, I5 and I6 are connected with VDD, and the collector electrode of the NPN triode Q3 is connected with VDD;
The output end of the current source I2 is connected with the cathode of the zener diode D1 and one end of the resistor R2;
The other end of the resistor R2 is connected with one end of the resistor R3 and the base electrode of the NPN triode Q0;
The other end of the resistor R3 is connected with the emitters of the NPN triodes Q0, Q2 and Q3 and the input end of the current source I3 and is used as the output end of the temperature detection circuit;
The base electrode of the NPN triode Q2 is connected with the output end of the current source I5 and the collector electrode of the NPN triode Q0;
the base electrode of the NPN triode Q3 is connected with the output end of the current source I6 and the collector electrode of the NPN triode Q2;
the anode of the zener diode D1 and the output terminal of the current source I3 are grounded.
7. A temperature sensing circuit according to claim 6, wherein the current sources I2, I3, I5, I6 are each replaced by a resistor.
8. The temperature sensing circuit of claim 6, wherein NPN transistors Q2, Q3 are replaced with NMOS transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323182785.2U CN221037722U (en) | 2023-11-24 | 2023-11-24 | Temperature detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323182785.2U CN221037722U (en) | 2023-11-24 | 2023-11-24 | Temperature detection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221037722U true CN221037722U (en) | 2024-05-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202323182785.2U Active CN221037722U (en) | 2023-11-24 | 2023-11-24 | Temperature detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221037722U (en) |
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2023
- 2023-11-24 CN CN202323182785.2U patent/CN221037722U/en active Active
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