CN213149573U - Zero temperature drift current source - Google Patents
Zero temperature drift current source Download PDFInfo
- Publication number
- CN213149573U CN213149573U CN202022541447.3U CN202022541447U CN213149573U CN 213149573 U CN213149573 U CN 213149573U CN 202022541447 U CN202022541447 U CN 202022541447U CN 213149573 U CN213149573 U CN 213149573U
- Authority
- CN
- China
- Prior art keywords
- triode
- resistor
- current source
- temperature
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Control Of Electrical Variables (AREA)
Abstract
The utility model provides a zero temperature drift current source, include: the current source generating module comprises a current mirror, a first triode, a second triode, a third triode and a first resistor; the collector of the first triode is connected with the first end of the current mirror, the collector of the second triode is connected with the second end of the current mirror, the base of the first triode is connected with the base and the collector of the second triode, the emitter of the first triode is grounded through the first resistor, the emitter of the second triode is connected with the emitter of the third triode, the base of the third triode is connected with the output end of the compensation module, and the collector of the third triode is grounded; the compensation module is connected with the power supply generation module and generates a compensation signal to enable the temperature coefficient characteristic of the emitter of the first triode to be consistent with the temperature coefficient characteristic of the first resistor, and then current irrelevant to temperature is generated in the current source generation module. The utility model discloses the structure is exquisite, with low costs, low power dissipation, and the electric current source temperature that can produce floats lower, is suitable for the occasion that the required precision is high.
Description
Technical Field
The utility model relates to an integrated circuit design field especially relates to a zero temperature drift current source.
Background
Analog circuits widely contain voltage and current references, which are dc quantities, which as standard parameters should have little or no relation to power supply, process parameters and temperature, which are an integral part of the analog circuit. In the prior art, a PTAT (proportional to absolute temperature) circuit is used to obtain a positive temperature coefficient current, and then the positive temperature coefficient current or voltage and a negative temperature coefficient current or voltage are cancelled to obtain a voltage reference or a current reference independent of temperature. When the existing PTAT circuit works at high temperature, the power consumption is increased; the current source circuit considering power consumption has a complex circuit structure and high cost, and cannot ensure the accuracy of the current source (especially for a circuit module with high precision requirement, the accuracy of the current source is very important).
Therefore, how to obtain a current source with higher accuracy while reducing power consumption and circuit structure complexity has become one of the problems to be solved by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
In view of the above shortcoming of the prior art, the utility model aims to provide a zero temperature floats current source for current source circuit consumption is high among the solution prior art, the structure is complicated, the poor scheduling problem of accuracy.
To achieve the above and other related objects, the present invention provides a zero temperature drift current source, which at least comprises:
the compensation module and the current source generation module;
the current source generating module comprises a current mirror, a first triode, a second triode, a third triode and a first resistor; a collector of the first triode is connected with a first end of the current mirror, a collector of the second triode is connected with a second end of the current mirror, a base of the first triode is connected with a base and a collector of the second triode, an emitter of the first triode is grounded through the first resistor, an emitter of the second triode is connected with an emitter of the third triode, a base of the third triode is connected with an output end of the compensation module, and a collector of the third triode is grounded;
the compensation module is connected with the power supply generation module and generates a compensation signal to enable the temperature coefficient characteristic of the emitting electrode of the first triode to be consistent with the temperature coefficient characteristic of the first resistor, and then current irrelevant to temperature is generated in the current source generation module.
Optionally, the compensation module includes a second resistor, a third resistor, a fourth resistor, a fifth resistor, a fourth triode, and a fifth triode;
one end of the second resistor is connected with a power supply voltage, and the other end of the second resistor is connected with the third resistor; the other end of the third resistor is connected with a collector and a base of the fourth triode, and an emitter of the fourth triode is grounded;
a collector of the fifth triode is connected with the power supply voltage, a base of the fifth triode is connected with a connection node of the second resistor and the third resistor, and an emitter of the fifth triode is connected with one end of the fourth resistor; the other end of the fourth resistor is connected with a collector and a base of the fourth triode through the fifth resistor, and a connection node of the fourth resistor and the fifth resistor outputs the compensation signal.
More optionally, the fourth transistor and the fifth transistor are NPN transistors.
More optionally, the first resistance is a negative temperature coefficient resistance.
More optionally, the first transistor and the second transistor are NPN transistors.
More optionally, the third transistor is a PNP transistor.
More optionally, the current mirror includes a first MOS transistor and a second MOS transistor; the source electrodes of the first MOS tube and the second MOS tube are connected with a power supply voltage, the grid electrode and the drain electrode of the first MOS tube are connected with the grid electrode of the second MOS tube, the drain electrode of the first MOS tube serves as the first output end of the current mirror, and the drain electrode of the second MOS tube serves as the second output end of the current mirror.
As mentioned above, the utility model discloses a zero temperature floats current source has following beneficial effect:
the utility model discloses a zero temperature floats current source structure exquisiteness, with low costs, low power dissipation, and the current source temperature that can produce floats lower, is suitable for the occasion that the required precision is high.
Drawings
Fig. 1 shows a schematic structural diagram of the zero-temperature-drift current source of the present invention.
Fig. 2 is a schematic diagram showing the current source of the present invention varying with temperature.
Description of the element reference numerals
1 zero temperature drift current source
11 current source generating module
111 current mirror
12 compensation module
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
Please refer to fig. 1-2. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the invention in a schematic manner, and only the components related to the invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
As shown in fig. 1, the present embodiment provides a zero-temperature-drift current source 1, where the zero-temperature-drift current source 1 includes a current source generating module 11 and a compensating module 12.
As shown in fig. 1, the current source generating module 11 cancels a positive temperature coefficient current (or voltage) and a negative temperature coefficient current (or voltage) to obtain a zero temperature drift current source.
Specifically, in this embodiment, the current source generating module 11 includes a current mirror 111, a first transistor Q1, a second transistor Q2, a third transistor Q3 and a first resistor R1, wherein the first transistor Q1 and the second transistor Q2 are NPN transistors, the third transistor Q3 is a PNP transistor, and the first resistor R1 is a negative temperature coefficient resistor.
More specifically, the current mirror 111 includes a first MOS transistor P1 and a second MOS transistor P2, and the first MOS transistor P1 and the second MOS transistor P2 are PMOS transistors. The source electrode of the first MOS transistor P1 is connected with a power supply voltage, and the grid electrode and the drain electrode are connected and used as a first output end of the current mirror 111; the source of the second MOS transistor P2 is connected to the power supply voltage, the gate is connected to the gate of the first MOS transistor P1, the drain is used as the second output terminal of the current mirror 111, and the substrates of the first MOS transistor P1 and the second MOS transistor P2 are connected to the power supply voltage. The width-to-length ratio of the first MOS transistor P1 to the second MOS transistor P2 is 1: 1. The collector of the first transistor Q1 is connected to the first end of the current mirror 111 (i.e. the drain of the first MOS transistor P1), the base is connected to the base of the second transistor Q2, and the emitter is grounded via the first resistor R1. The collector and the base of the second transistor Q2 are connected to the second terminal of the current mirror 111 (i.e. the drain of the second MOS transistor P2), and the emitter is connected to the emitter of the third transistor Q3. The base of the third triode Q3 is connected to the output terminal of the compensation module 12, and the collector is grounded. The area ratio of the emitting electrodes of the first triode Q1 and the second triode Q2 is N:1, and positive temperature coefficient voltage is generated through the voltage difference between the base electrodes and the emitting electrodes of the first triode Q1 and the second triode Q2.
As shown in fig. 1, the compensation module 12 is connected to the power generating module 11, and generates a compensation signal, where the compensation signal makes the temperature coefficient characteristic of the emitter of the first transistor Q1 in the power generating module 11 consistent with the temperature coefficient characteristic of the first resistor R1, so as to generate a temperature-independent current in the current generating module 11.
Specifically, as an example, the compensation module 12 includes a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a fourth transistor Q4, and a fifth transistor Q5. In this embodiment, the fourth transistor Q4 and the fifth transistor Q5 are NPN transistors. One end of the second resistor R2 is connected with the power supply voltage, and the other end is connected with one end of the third resistor R3; the other end of the third resistor R3 is connected with the collector and the base of the fourth triode Q4, and the emitter of the fourth triode Q4 is grounded; the collector of the fifth triode Q5 is connected with the power supply voltage, the base is connected with the connection node of the second resistor R2 and the third resistor R3, and the emitter is connected with one end of the fourth resistor R4; the other end of the fourth resistor R4 is connected to the collector and the base of the fourth transistor Q4 via the fifth resistor R5, and the connection node between the fourth resistor R4 and the fifth resistor R5 outputs the compensation signal.
It should be noted that, the circuit structure that the temperature coefficient characteristic of the emitter of the first transistor Q1 in the power generating module 11 is consistent with the temperature coefficient characteristic of the first resistor R1 by generating the compensation signal is arbitrarily applicable to the present invention, which is not limited to this embodiment.
Specifically, the compensation signal satisfies the following relation:
wherein Vb3 is the compensation signal (the base voltage of the third transistor Q3), R2 is the resistance value of the second resistor, R3 is the resistance value of the third resistor, R4 is the resistance value of the fourth resistor, R5 is the resistance value of the fifth resistor, Vin is the value of the power supply voltage, Vbe4 is the base-emitter voltage of the fourth transistor Q4, and Vbe5 is the base-emitter voltage of the fifth transistor Q5.
Then, the emitter voltage of the second transistor Q2 satisfies the following relation:
ve2 is the emitter voltage of the second transistor Q2, and Vbe3 is the base-emitter voltage of the third transistor Q3.
The emitter voltage of the first triode Q1 satisfies the following relation:
wherein Ve1 is an emitter voltage of the first triode Q1, Vbe2 is a base-emitter voltage of the second triode Q2, Vbe1 is a base-emitter voltage of the first triode Q1, and Vbe2-Vbe1 is Δ Vbe ═ VTlnN (which shows a positive temperature coefficient).
Further, the current generated by the voltage across the first resistor R1 satisfies the following relation:
wherein, I is a current generated by a voltage across the first resistor R1, and R1 is a resistance of the first resistor.
Since the second resistor R2, the third resistor R3, the fourth resistor R4 and the fifth resistor R5 are resistors with a fixed ratio, and the base-emitter voltages Vbe of the fourth transistor Q4 and the fifth transistor Q5 are equal, the above equation (4) can be simplified as follows:
where K1 and K2 are constants for determining the respective resistances.
If the required current is independent of temperature, equation (5) above can be expressed as:
since Vbe is a negative temperature coefficient, and the first resistor R1 is a negative temperature coefficient resistor, the equation is satisfied, and the current I generated by the voltage across the first resistor R1 is independent of temperature, so the current I generated by the voltage across the first resistor R1 can be used as a current source to provide a reference for other circuit modules.
As shown in fig. 2, which is a schematic diagram of the current I generated by the voltage across the first resistor R1 with temperature, it can be seen from the diagram that, in the range of-50 ℃ to 150 ℃, the current I generated by the voltage across the first resistor R1 has a change value of 0.05uA, and the temperature drift is small, which can be regarded as zero temperature drift.
The utility model discloses a zero temperature floats current source structure exquisiteness, with low costs, low power dissipation, and the current source temperature that can produce floats lower, is suitable for the occasion that the required precision is high.
To sum up, the utility model provides a zero temperature floats current source, include: the compensation module and the current source generation module; the current source generating module comprises a current mirror, a first triode, a second triode, a third triode and a first resistor; a collector of the first triode is connected with a first end of the current mirror, a collector of the second triode is connected with a second end of the current mirror, a base of the first triode is connected with a base and a collector of the second triode, an emitter of the first triode is grounded through the first resistor, an emitter of the second triode is connected with an emitter of the third triode, a base of the third triode is connected with an output end of the compensation module, and a collector of the third triode is grounded; the compensation module is connected with the power supply generation module and generates a compensation signal to enable the temperature coefficient characteristic of the emitting electrode of the first triode to be consistent with the temperature coefficient characteristic of the first resistor, and then current irrelevant to temperature is generated in the current source generation module. The utility model discloses a zero temperature floats current source structure exquisiteness, with low costs, low power dissipation, and the current source temperature that can produce floats lower, is suitable for the occasion that the required precision is high. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (7)
1. A zero-temperature-drift current source, comprising at least:
the compensation module and the current source generation module;
the current source generating module comprises a current mirror, a first triode, a second triode, a third triode and a first resistor; a collector of the first triode is connected with a first end of the current mirror, a collector of the second triode is connected with a second end of the current mirror, a base of the first triode is connected with a base and a collector of the second triode, an emitter of the first triode is grounded through the first resistor, an emitter of the second triode is connected with an emitter of the third triode, a base of the third triode is connected with an output end of the compensation module, and a collector of the third triode is grounded;
the compensation module is connected with the current source generation module and generates a compensation signal to enable the temperature coefficient characteristic of the emitter of the first triode to be consistent with the temperature coefficient characteristic of the first resistor, and then current irrelevant to temperature is generated in the current source generation module.
2. The zero-temperature-drift current source of claim 1, wherein: the compensation module comprises a second resistor, a third resistor, a fourth resistor, a fifth resistor, a fourth triode and a fifth triode;
one end of the second resistor is connected with a power supply voltage, and the other end of the second resistor is connected with the third resistor; the other end of the third resistor is connected with a collector and a base of the fourth triode, and an emitter of the fourth triode is grounded;
a collector of the fifth triode is connected with the power supply voltage, a base of the fifth triode is connected with a connection node of the second resistor and the third resistor, and an emitter of the fifth triode is connected with one end of the fourth resistor; the other end of the fourth resistor is connected with a collector and a base of the fourth triode through the fifth resistor, and a connection node of the fourth resistor and the fifth resistor outputs the compensation signal.
3. The zero-temperature-drift current source of claim 2, wherein: the fourth triode and the fifth triode are NPN triodes.
4. The zero-temperature-drift current source according to any one of claims 1 to 3, characterized in that: the first resistor is a negative temperature coefficient resistor.
5. The zero-temperature-drift current source according to any one of claims 1 to 3, characterized in that: the first triode and the second triode are NPN triodes.
6. The zero-temperature-drift current source according to any one of claims 1 to 3, characterized in that: the third triode is a PNP triode.
7. The zero-temperature-drift current source according to any one of claims 1 to 3, characterized in that: the current mirror comprises a first MOS tube and a second MOS tube; the source electrodes of the first MOS tube and the second MOS tube are connected with a power supply voltage, the grid electrode and the drain electrode of the first MOS tube are connected with the grid electrode of the second MOS tube, the drain electrode of the first MOS tube serves as the first output end of the current mirror, and the drain electrode of the second MOS tube serves as the second output end of the current mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022541447.3U CN213149573U (en) | 2020-11-05 | 2020-11-05 | Zero temperature drift current source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022541447.3U CN213149573U (en) | 2020-11-05 | 2020-11-05 | Zero temperature drift current source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213149573U true CN213149573U (en) | 2021-05-07 |
Family
ID=75722203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022541447.3U Active CN213149573U (en) | 2020-11-05 | 2020-11-05 | Zero temperature drift current source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213149573U (en) |
-
2020
- 2020-11-05 CN CN202022541447.3U patent/CN213149573U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209433274U (en) | A kind of constant current generative circuit structure of automatic biasing | |
| CN110825155B (en) | Zero temperature coefficient reference voltage and current source generating circuit | |
| CN212322146U (en) | Current reference circuit with temperature compensation | |
| CN108052151B (en) | Band-gap reference voltage source of no-clamping operational amplifier | |
| CN111045470B (en) | Band-gap reference circuit with low offset voltage and high power supply rejection ratio | |
| CN103365330A (en) | Reference voltage/current generation device | |
| CN111665897A (en) | Voltage stabilizing power supply circuit with negative temperature coefficient | |
| RU2461048C1 (en) | Reference voltage source | |
| CN213149573U (en) | Zero temperature drift current source | |
| TWI716323B (en) | Voltage generator | |
| JP2008271503A (en) | Reference current circuit | |
| US9304528B2 (en) | Reference voltage generator with op-amp buffer | |
| CN111427406B (en) | Band gap reference circuit | |
| CN211044054U (en) | Reference circuit with independently adjustable voltage and temperature coefficients | |
| CN211979540U (en) | Simple zero-temperature-drift current bias circuit | |
| JPH0365716A (en) | Constant voltage circuit | |
| CN115268555B (en) | Second-order temperature compensation band gap reference voltage circuit and differential circuit | |
| CN112965565A (en) | Band gap reference circuit with low temperature drift | |
| CN214795740U (en) | Band-gap reference voltage source | |
| CN211577764U (en) | Band gap reference circuit and electronic device | |
| CN114815950B (en) | Current generating circuit, chip and electronic equipment | |
| CN221037722U (en) | Temperature detection circuit | |
| CN110647206A (en) | Band-gap reference voltage source for improving fluctuation upper limit of power supply voltage | |
| CN217640050U (en) | Band gap reference circuit, temperature sensing circuit and electronic device | |
| CN117215366A (en) | Reference voltage output circuit with ultralow temperature drift |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |