CN216671620U - Chip packaging shell and semiconductor device - Google Patents

Chip packaging shell and semiconductor device Download PDF

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Publication number
CN216671620U
CN216671620U CN202123114933.8U CN202123114933U CN216671620U CN 216671620 U CN216671620 U CN 216671620U CN 202123114933 U CN202123114933 U CN 202123114933U CN 216671620 U CN216671620 U CN 216671620U
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China
Prior art keywords
cavity
heat sink
plastic
plastic shell
shell
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Active
Application number
CN202123114933.8U
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Chinese (zh)
Inventor
李军
王宝
蒋涛
丁江朋
牛洪岭
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Hebei Zhongchi Electronic Technology Co ltd
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Hebei Zhongchi Electronic Technology Co ltd
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Priority to CN202123114933.8U priority Critical patent/CN216671620U/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model provides a chip packaging shell and a semiconductor device, wherein the chip packaging shell comprises a plastic shell, a lead and a heat sink, wherein the lead and the heat sink are integrally formed with the plastic shell in an injection molding mode; the plastic shell is surrounded by plastic side walls to form a ring, a first cavity and a second cavity which are communicated up and down are formed in the middle of the plastic shell, and the inner wall of the second cavity protrudes out of the side walls of the first cavity to form a step; the lead is integrally formed on the side wall of the second cavity and is provided with a first exposed surface which is positioned on the step and is exposed upwards for bonding the chip and a second exposed part which is positioned outside and is used for connecting an external circuit; the heat sink is integrally formed at the bottom of the plastic shell to form a closed base at the bottom of the second cavity. The semiconductor device comprises the chip packaging shell. The chip packaging shell and the semiconductor device provided by the utility model simplify the production process, improve the production efficiency and have longer service life.

Description

Chip packaging shell and semiconductor device
Technical Field
The utility model belongs to the technical field of semiconductors, and particularly relates to a chip packaging shell and a semiconductor device.
Background
The mobile communication base station is a core device of a mobile communication network, provides wireless coverage, and realizes wireless signal transmission between a wired communication network and a wireless terminal.
Devices made of LDMOS (laterally-diffused metal-oxide semiconductor, silicon material) chips and GAN (gallium nitride) chips are high-frequency high-power transistors, are applied to power amplification components in wireless communication base stations, and are key components for improving radio-frequency power signals in the base stations.
The common package is a ceramic package, which has poor heat dissipation performance and complex production process, so that a plastic package is provided, a plastic ring with a lead is firstly manufactured on the plastic package, and the bottom surface of the plastic ring is adhered to the heat sink by glue. The bonding mode not only makes the forming process complicated, has low production efficiency, but also ensures that the adhesive is easy to age after long-term use and has short service life.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a chip packaging shell and a semiconductor device, and aims to simplify the forming process of the packaging shell, improve the production efficiency and prolong the service life of the semiconductor device.
In a first aspect, the utility model provides a chip package housing, comprising a plastic housing, and a lead and a heat sink which are integrally injection molded with the plastic housing;
the plastic shell is surrounded by plastic side walls to form a ring, a first cavity and a second cavity which are communicated up and down are formed in the middle of the plastic shell, and the inner wall of the second cavity protrudes out of the side walls of the first cavity to form a step;
the lead is integrally formed on the side wall of the second cavity and is provided with a first exposed surface which is positioned on the step and is exposed upwards for bonding a chip and a second exposed part which is positioned outside and is used for connecting an external circuit;
the heat sink is integrally formed at the bottom of the plastic shell to form a closed base at the bottom of the second cavity.
Compared with the prior art, the scheme shown in the embodiment of the application has the advantages that after the heat sink and the lead are respectively processed, the heat sink and the lead are placed in the injection molding cavity of the plastic shell, the position is adjusted, the injection molding process of the plastic shell is started, and after the injection molding process is finished, the heat sink and the lead are fixed on the plastic shell. The lead and the heat sink of the chip packaging shell are fixed with the plastic shell through the injection molding process of the plastic shell, and compared with the prior method of bonding the plastic shell and the heat sink, the method simplifies the production process and improves the production efficiency; and the heat sink is integrated into one piece on the plastic casing, the connection stability is better, and the service life is longer.
With reference to the first aspect, in a possible implementation manner, the side wall of the first cavity has a preset inclination angle inclined outward in a direction from bottom to top.
In some embodiments, the side wall of the second cavity has a preset inclination angle inclined outwards along the direction from bottom to top;
or the side wall of the second cavity is vertically arranged.
With reference to the first aspect, in a possible implementation manner, the lead has a through hole for connecting and fusing the side wall of the first cavity and the side wall of the second cavity to each other.
With reference to the first aspect, in a possible implementation manner, the plastic sidewall encloses a ring body with a rectangular cross section, and two opposite sides of the ring body are respectively provided with 2 to 3 groups of the leads.
With reference to the first aspect, in one possible implementation manner, the lead is flat or cylindrical.
With reference to the first aspect, in a possible implementation manner, a boss is formed on the top outer peripheral surface of the heat sink in a protruding manner, and the boss is located in the side wall of the second cavity.
In some embodiments, the boss has a through hole extending through the boss in an up-down direction.
With reference to the first aspect, in a possible implementation manner, the bottom surface of the heat sink protrudes from the bottom surface of the plastic housing;
or the bottom surface of the heat sink is recessed in the bottom surface of the plastic shell;
or the bottom surface of the heat sink is flush with the bottom surface of the plastic shell.
In a second aspect, an embodiment of the present invention further provides a semiconductor device, including the chip package casing, further including:
the chip is positioned in the second cavity and connected with the upper surface of the heat sink, and the chip is connected with the first exposed surface through a lead; and
and the sealing cover is arranged on the top of the plastic shell.
Drawings
Fig. 1 is a schematic front view of a chip package housing according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;
fig. 3 is a schematic front view of a chip package housing according to a second embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view taken along line B-B of FIG. 3;
fig. 5 is a schematic front view of a heat sink according to an embodiment of the present invention;
fig. 6 is a schematic front view of a heat sink according to a second embodiment of the present invention;
fig. 7 is a schematic front view of a heat sink according to a third embodiment of the present invention;
fig. 8 is a schematic front view of a semiconductor device according to an embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view taken along line C-C of FIG. 8;
fig. 10 is a schematic view (the same as the view in fig. 8) of an internal structure of a semiconductor device according to a first embodiment of the present invention.
Description of reference numerals:
10-a plastic housing; 11-a first cavity; 12-a second cavity; 13-step;
20-a lead; 21-a first bare surface; 22-a second bare portion; 23-a through hole;
30-a heat sink; 31-a boss; 32-via holes;
40-chip; 41-lead;
and (50) sealing the cover.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.
Referring to fig. 1 to 4, a chip package according to the present invention will be described. The chip packaging shell comprises a plastic shell 10, and a lead 20 and a heat sink 30 which are integrally injection-molded with the plastic shell 10; the plastic shell 10 is surrounded by plastic side walls to form a ring shape, a first cavity 11 and a second cavity 12 which are communicated up and down are formed in the middle of the plastic shell 10, and the inner wall of the second cavity 12 protrudes out of the side wall of the first cavity 11 to form a step 13; the lead 20 is integrally formed on the side wall of the second cavity 12, and has a first exposed surface 21 located on the step 13 and exposed upwards for bonding the chip, and a second exposed portion 22 located outside for connecting an external circuit; the heat sink 30 is integrally formed at the bottom of the plastic housing 10 to form a closed base at the bottom of the second cavity 12.
It should be noted that the plastic housing 10 can be made of high temperature resistant engineering plastics such as LCP (liquid crystal polymer), LCP (liquid crystal polymer) modified material, PPS (polyether plastics), PS (polystyrene), PBT (thermoplastic polyester), etc., and the plastic has glass fiber or mineral powder as filler.
The heat sink 30 may be made of high thermal conductive metal materials such as copper and copper alloy, tungsten copper, molybdenum copper, CPC (composite ceramic polymer material), CMC (copper molybdenum copper), and the like.
The lead 20 may be made of copper and copper alloy, aluminum and aluminum alloy, kovar alloy, or the like.
Compared with the prior art, in the chip package housing provided by the embodiment, after the heat sink 30 and the lead 20 are respectively processed, the heat sink 30 and the lead 20 are placed in the injection molding cavity of the plastic housing 10, the position is adjusted, the injection molding process of the plastic housing 10 is started, and after the injection molding process is completed, the heat sink 30 and the lead 20 are fixed on the plastic housing 10. The lead 20 and the heat sink 30 of the chip package shell are fixed with the plastic shell 10 through the injection molding process of the plastic shell 10, compared with the prior method that the plastic shell 10 is bonded with the heat sink 30, the production process is simplified, and the production efficiency is improved; and the heat sink 30 is integrally formed on the plastic shell 10, so that the connection stability is better and the service life is longer.
In some embodiments, a modified embodiment of the plastic housing 10 described above may be configured as shown in fig. 2 and 4. Referring to fig. 2 and 4, the side wall of the first cavity 11 has a preset inclination angle inclined outward in a direction from bottom to top. That is, the inner wall of first cavity 11 is equipped with the draft, and the convenience is demolded after injection moulding, prevents that the inner structure of first cavity 11 is damaged to the drawing of patterns process smoothly.
In some embodiments, a modified embodiment of the plastic housing 10 described above may be configured as shown in fig. 4. Referring to fig. 4, the side wall of the second cavity 12 has a preset inclination angle inclined outward in the direction from bottom to top; alternatively, the side walls of the second cavity 12 are arranged vertically. On the basis that the lateral wall of first cavity 11 is equipped with the draft, the lateral wall of second cavity 12 also can set up same draft, is mainly used for installing the chip in second cavity 12, sets up the convenient draft of corresponding draft, can also guarantee the surface quality of second cavity 12 inner wall, prevents the chip that wears out.
On the basis of the draft angle on the side wall of the first cavity 11, the draft angle of the second cavity 12 is not needed, so that the mold is convenient to process, and the cost is reduced.
In some embodiments, a modified embodiment of the lead 20 described above may be configured as shown in fig. 1-4. Referring to fig. 1 to 4, the lead 20 has a through hole 23 for connecting and fusing the sidewalls of the first cavity 11 and the second cavity 12 to each other. During injection molding, the molten plastic flows into the through hole 23, so that the side wall of the first cavity 11 and the side wall of the second cavity 12 on the plastic casing 10 are connected with each other, thereby not only fusing the lead 20 and the plastic casing 10 together, but also enhancing the connection relationship between the lead 20 and the plastic casing 10.
Specifically, referring to fig. 3, in order to enhance the connection relationship between the injection-molded leads 20 and the plastic housing 10, a plurality of through-holes 23 may be provided on each lead 20.
In some embodiments, a specific embodiment of the plastic housing 10 can be constructed as shown in fig. 1 and 3. Referring to fig. 1 and 3, the plastic sidewall is enclosed into a ring body with a rectangular cross section, and two opposite sides of the ring body are respectively provided with 2-3 groups of leads 20. Referring to fig. 1, the left and right two corresponding leads 20 are in one group, and three groups are arranged along the length direction of the plastic housing 10; the number of leads 20 may be set according to the requirements of the chip mounted in the second cavity 12.
In some embodiments, a specific implementation of the lead 20 may be configured as shown in fig. 1-4. Referring to fig. 1 to 4, the lead 20 has a flat shape or a cylindrical shape. The shape of the leads 20 may be tailored to the specific packaging requirements. Because the lead 20 is made of different materials from the plastic shell 10, different materials are difficult to be fused tightly, and when the lead 20 is flat, the contact area is large, so that the fusion difficulty can be reduced.
In some embodiments, an improved implementation of heatsink 30 described above may employ a structure as shown in fig. 2 and 4. Referring to fig. 2 and 4, a boss 31 is formed on the top outer peripheral surface of the heat sink 30 in a protruding manner, and the boss 31 is located in the side wall of the second cavity 12. It can be understood that, in order to ensure that the connection with the heat sink 30 can be realized after the plastic housing 10 is injection molded, the outer peripheral surface of the heat sink 30 must be located between the inner side surface and the outer side surface of the second cavity 12, and the outer peripheral surface of the heat sink 30 is a smooth vertical surface, and by providing the boss 31, not only the contact area between the heat sink 30 and the plastic housing 10 is increased, but also the limiting function can be achieved in the up-down direction, so that the connection is firmer after the heat sink 30 and the plastic housing 10 are integrally injection molded.
In some embodiments, a specific embodiment of the above-mentioned boss 31 may be configured as shown in fig. 5 to 7. Referring to fig. 5 to 7, the boss 31 has a through hole 32 penetrating the boss 31 in the up-down direction. The diameter of the through hole 32 is smaller than or equal to the width of the boss 31, and the through hole 32 can be positioned between the inner circumferential surface and the outer circumferential surface of the boss 31; the protrusion 31 may extend to the outer circumferential surface of the protrusion 31, and the outer circumferential surface corresponding to the protrusion 31 may be recessed to form the via hole 32, so that the protrusion 31 at the outer circumference of the heat sink 30 may be formed in a zigzag shape. During injection molding, the molten plastic flows into the through holes 32, so that the plastic on the top and bottom of the bosses 31 are connected and fused with each other through the through holes 32, and the connection relationship between the heat sink 30 and the plastic housing 10 can be enhanced.
Alternatively, the via holes 32 may be circular holes, rectangular holes, irregular holes, or the like.
In some embodiments, an improved implementation of heatsink 30 described above may employ a structure as shown in fig. 2 and 4. Referring to fig. 2 and 4, the bottom surface of the heat sink 30 is disposed to protrude from the bottom surface of the plastic housing 10; or, the bottom surface of the heat sink 30 is recessed in the bottom surface of the plastic housing 10; alternatively, the bottom surface of the heat sink 30 is flush with the bottom surface of the plastic housing 10. The bottom surface of the heat sink 30 can be completely flush with the bottom surface of the plastic housing 10, but the flush condition needs to be considered, because the cooling process after the plastic housing 10 is molded by injection has a certain degree of shrinkage, the thickness of the heat sink 30 cannot be well mastered to enable the flush condition with the bottom surface of the plastic housing 10, so that the bottom surface of the heat sink 30 protrudes out of the bottom surface of the plastic housing 10, the bottom surface of the heat sink 30 can also be recessed into the bottom surface of the plastic housing 10, and the processing process is simpler.
The preparation method of the chip packaging shell comprises the following steps:
s1: processing a lead 20;
s2: processing the heat sink 30; (the lead 20 and heatsink 30 processes are not specifically ordered and may be processed simultaneously)
S3: placing the processed lead 20 and the processed heat sink 30 into an injection molding cavity of the plastic shell 10, and integrally forming the lead and the plastic shell 10 to complete connection and fixation;
s4: plating the surface of the lead 20 by nickel plating, gold plating, nickel-palladium-gold plating or the like;
s5: the processing of the chip package housing of the utility model is completed.
Based on the same inventive concept, referring to fig. 8 to 10, the embodiment of the present application further provides a semiconductor device, which includes the above chip package housing, further includes a chip 40 and a cover 50, the chip 40 is located in the second cavity 12 and connected to the upper surface of the heat sink 30, the chip 40 is connected to the first exposed surface 21 through a wire 41; a cover 50 is provided on the top of the plastic housing 10.
Compared with the prior art, the semiconductor device provided by the embodiment has the advantages that after the heat sink 30 and the lead 20 are respectively processed, the heat sink 30 and the lead 20 are placed in the injection molding cavity of the plastic housing 10, the position is adjusted, the injection molding process of the plastic housing 10 is started, after the injection molding process is completed, the heat sink 30 and the lead 20 are fixed on the plastic housing 10, the chip 40 is installed on the upper surface of the heat sink 30 and connected with the first exposed surface 21 through the lead 41, and finally the sealing cover 50 is covered to form the semiconductor device. The lead 20 and the heat sink 30 in the semiconductor device are fixed with the plastic shell 10 through the injection molding process of the plastic shell 10, compared with the prior method that the plastic shell 10 is bonded with the heat sink 30, the production process is simplified, and the production efficiency is improved; and the heat sink 30 is integrally formed on the plastic shell 10, so that the connection stability is better, and the service life of the semiconductor device of the embodiment of the application is prolonged.
Based on the steps of manufacturing the chip package housing in S1-S6, the steps of manufacturing the semiconductor device of the present invention include:
s7: mounting the chip 40 on the surface of the heat sink 30 by soldering or gluing;
s8: from the electrode bonding gold wire of the chip to the gold-plated lead surface (i.e., the first exposed surface 21);
s9: gluing the surface of the cover 50, and adhering the glue on the top surface of the plastic shell 10, so that the inner cavity (the first cavity 11 and the second cavity 12) of the plastic shell forms a cavity with sealing performance;
s10: and (5) inspecting and testing to obtain a complete device.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. A chip package shell is characterized by comprising a plastic shell, and a lead and a heat sink which are integrally injection-molded with the plastic shell;
the plastic shell is surrounded by plastic side walls to form a ring, a first cavity and a second cavity which are communicated up and down are formed in the middle of the plastic shell, and the inner wall of the second cavity protrudes out of the side walls of the first cavity to form a step;
the lead is integrally formed on the side wall of the second cavity and is provided with a first exposed surface which is positioned on the step and is exposed upwards for bonding the chip and a second exposed part which is positioned outside and is used for connecting an external circuit;
the heat sink is integrally formed at the bottom of the plastic shell to form a closed base at the bottom of the second cavity.
2. The chip package housing according to claim 1, wherein the side wall of the first cavity has a predetermined inclination angle inclined outward in a direction from bottom to top.
3. The chip package housing according to claim 2, wherein the side wall of the second cavity has a predetermined inclination angle inclined outward in a direction from bottom to top;
or the side wall of the second cavity is vertically arranged.
4. The chip package housing according to claim 1, wherein the leads have through holes therein for connecting and fusing the sidewalls of the first cavity and the sidewalls of the second cavity to each other.
5. The chip package housing according to claim 1, wherein the plastic sidewall defines a ring body having a rectangular cross section, and 2 to 3 sets of the leads are disposed on two opposite sides of the ring body, respectively.
6. The chip package housing of claim 1, wherein the leads are flat or cylindrical.
7. The chip package shell according to claim 1, wherein a boss is formed on the top peripheral surface of the heat sink in a protruding manner, and the boss is located in the side wall of the second cavity.
8. The chip package housing as claimed in claim 7, wherein the boss has a via hole extending therethrough in an up-down direction.
9. The chip package housing according to claim 1, wherein a bottom surface of the heat sink is disposed to protrude from a bottom surface of the plastic housing;
or the bottom surface of the heat sink is recessed in the bottom surface of the plastic shell;
or the bottom surface of the heat sink is flush with the bottom surface of the plastic shell.
10. The semiconductor device, comprising the chip package housing of any one of claims 1-9, further comprising:
the chip is positioned in the second cavity and connected with the upper surface of the heat sink, and the chip is connected with the first exposed surface through a lead; and
and the sealing cover is arranged on the top of the plastic shell.
CN202123114933.8U 2021-12-10 2021-12-10 Chip packaging shell and semiconductor device Active CN216671620U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202123114933.8U CN216671620U (en) 2021-12-10 2021-12-10 Chip packaging shell and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202123114933.8U CN216671620U (en) 2021-12-10 2021-12-10 Chip packaging shell and semiconductor device

Publications (1)

Publication Number Publication Date
CN216671620U true CN216671620U (en) 2022-06-03

Family

ID=81794553

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202123114933.8U Active CN216671620U (en) 2021-12-10 2021-12-10 Chip packaging shell and semiconductor device

Country Status (1)

Country Link
CN (1) CN216671620U (en)

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