CN221102058U - Gallium nitride power module - Google Patents
Gallium nitride power module Download PDFInfo
- Publication number
- CN221102058U CN221102058U CN202322654272.0U CN202322654272U CN221102058U CN 221102058 U CN221102058 U CN 221102058U CN 202322654272 U CN202322654272 U CN 202322654272U CN 221102058 U CN221102058 U CN 221102058U
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- China
- Prior art keywords
- gallium nitride
- power module
- bottom plate
- module according
- accommodating
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Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 59
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000010354 integration Effects 0.000 claims abstract description 12
- 238000005192 partition Methods 0.000 claims abstract description 9
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 238000001816 cooling Methods 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 238000010606 normalization Methods 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a gallium nitride power module, which comprises a power assembly, a shell assembly and a bottom plate; the power component comprises a gallium nitride chip and a circuit substrate for mounting the gallium nitride chip; the shell assembly comprises a partition board and at least three integrated areas, wherein the integrated areas are arranged along a first direction, and the partition board is arranged between every two adjacent integrated areas; the bottom plate is spliced with the shell component, a first surface of the bottom plate is used for sealing one side of the integration zone to form a plurality of accommodating cavities, and the accommodating cavities are used for accommodating a group of power components; the utility model improves the integration level of the device through the module normalization design, can meet the power requirement of 1200W/800A and higher, and meanwhile, compared with a plurality of combined gallium nitride modules in the prior art, the gallium nitride power module has smaller size and volume, smaller occupied space, is beneficial to the layout and design of a circuit board, can reduce the electric loss and parasitic parameter influence, and has better heat dissipation effect.
Description
Technical Field
The utility model relates to the technical field of power semiconductor devices, in particular to a gallium nitride power module.
Background
Gallium nitride is used as a wide forbidden band semiconductor material, and has the advantages of large forbidden band width, high breakdown voltage, large thermal conductivity, high switching frequency, strong radiation resistance and the like; the higher switching frequency enables the application circuit to adopt passive devices with smaller size, the higher breakdown voltage indicates that the voltage tolerance capability of the gallium nitride material is higher than that of the traditional silicon material, the on-resistance performance is not affected, and the on-loss can be reduced; therefore, gallium nitride materials are widely used as materials with great development prospects, and become key devices for light weight of electronic products.
At present, in order to cope with the high power requirement, a plurality of gallium nitride modules are usually combined, which results in larger volume and more space occupation, so that the corresponding circuit layout needs to be re-planned, which is inconvenient in installation and integration, and requires additional development time and cost.
Disclosure of utility model
Therefore, the technical problems to be solved by the utility model are to overcome the technical difficulties of low integration level and limited power density of standard packaging devices in the prior art, and provide a gallium nitride power module which meets the requirements of high integration level and high power through modularized design.
In order to solve the technical problems, the utility model provides a gallium nitride power module, which comprises,
A power module including a gallium nitride chip and a circuit substrate for mounting the gallium nitride chip;
The shell assembly comprises a partition plate and at least three integrated areas, wherein the integrated areas are arranged along a first direction, and the partition plate is arranged between every two adjacent integrated areas;
The base plate is spliced with the shell component, the first surface of the base plate is used for sealing one side of the integration zone to form a plurality of accommodating cavities, and the accommodating cavities are used for accommodating a group of power components.
In one embodiment of the present utility model, the plurality of receiving chambers includes a first receiving chamber, a second receiving chamber, and a third receiving chamber arranged along the first direction.
In one embodiment of the present utility model, the housing assembly further includes connection terminals respectively located at both ends of the receiving cavity along a second direction, the second direction being perpendicular to the first direction.
In one embodiment of the present utility model, the cooling device is further included, and the cooling device is closely attached to a second surface of the base plate, and the second surface is disposed opposite to the first surface in a thickness direction of the base plate.
In one embodiment of the present utility model, the bottom plate further includes a fin protruding from the second surface and abutting the cooling device, and the fin is made of metal.
In one embodiment of the utility model, the power assembly further comprises a first solder layer and a second solder layer; the first welding layer is positioned on one side surface of the circuit substrate and used for fixing the gallium nitride chip, and the second welding layer is positioned on at least part of the area of the first surface and used for fixing the circuit substrate.
In one embodiment of the present utility model, the circuit substrate is made of gallium nitride.
In one embodiment of the utility model, the gallium nitride chips in the accommodating cavity are connected through bonding wires.
In one embodiment of the utility model, the bonding wire is provided as a copper wire.
In one embodiment of the utility model, the bottom plate and the shell component are adhered in a dispensing mode.
Compared with the prior art, the technical scheme of the utility model has the following advantages:
According to the gallium nitride power module, the integration level of the device is improved through the module normalization design, the power requirement of 1200W/800A and higher can be met, meanwhile, compared with the gallium nitride power module in the prior art, the gallium nitride power module is smaller in total size and volume, smaller in occupied space, beneficial to circuit board layout and design, capable of reducing electric loss and parasitic parameter influence and better in heat dissipation effect.
Drawings
In order that the utility model may be more readily understood, a more particular description of the utility model will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings, in which:
Fig. 1 is an exploded view of a gallium nitride power module in accordance with a preferred embodiment of the utility model;
fig. 2 is a top view of a gallium nitride power module in a preferred embodiment of the utility model;
fig. 3 is a side view of a gallium nitride power module in a preferred embodiment of the utility model.
Description of the specification reference numerals: 1. a power assembly; 11. a gallium nitride chip; 12. a circuit substrate; 13. a first weld layer; 14. a second weld layer; 2. a housing assembly; 21. an integration region; 22. a partition plate; 3. a bottom plate; 31. a first surface; 32. a second surface; 41. a first accommodation chamber; 42. a second accommodation chamber; 43. a third accommodation chamber; 5. a connection terminal; 6. and (3) a fin.
Detailed Description
The present utility model will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the utility model and practice it.
Examples
Referring to fig. 1 to 3, the utility model provides a gallium nitride power module, which comprises a power assembly 1, a shell assembly 2, a bottom plate 3 and a cooling device.
Specifically, according to the present inventor's study, it is found that in the prior art, when the 1200W/600A power requirement is met, a plurality of gallium nitride modules are required to be combined, the overall volume is large, and electrical challenges such as electrical loss and parasitic parameters are faced during packaging, and the installation and integration difficulties are large, so, according to the preferred embodiment of the present utility model, as shown in fig. 1, the housing assembly 2 includes a partition 22 and at least three integrated areas 21, each integrated area 21 is provided with the power assembly 1, and the integrated areas 21 arranged in an aligned manner replace discrete gallium nitride modules, so as to improve the integration level; the integrated regions 21 are arranged along a first direction, and the partition plates 22 are disposed between adjacent integrated regions 21.
Further, referring to fig. 1, the housing assembly 2 further includes connection terminals 5, the connection terminals 5 are respectively located at two ends of the accommodating cavity along a second direction, the second direction is perpendicular to the first direction, and the connection terminals 5 are used for guiding working current into the gallium nitride power module.
Specifically, referring to fig. 1, the base plate 3 is used for being spliced with the housing, the first surface 31 in the thickness direction of the base plate 3 is disposed opposite to the housing component 2, in a preferred embodiment of the present utility model, the housing component 2 is adhered to the base plate 3 in a dispensing manner, and the first surface 31 is connected to the opening side of the integration zone 21 to form a closed accommodating cavity for accommodating the power component 1. Further, in some embodiments, referring to fig. 2, the plurality of accommodating chambers includes a first accommodating chamber 41, a second accommodating chamber 42, and a third accommodating chamber 43 arranged along the first direction, and 1200W/800A power requirements can be satisfied by the single module design; in some embodiments, the accommodating chambers are arranged along the first direction, and the number of the accommodating chambers is not limited thereto; the gallium nitride power module is capable of meeting higher power requirements and has a smaller size in the first direction than existing discrete designs; the size of the gallium nitride power module in the first direction in the preferred embodiment of the utility model is reduced by about 7% compared with the size of a plurality of gallium nitride modules combined in the prior art in the first direction, and the utility model can optimize the occupied space of the module.
Specifically, referring to fig. 1, the power module 1 includes a gallium nitride chip 11 and a circuit substrate 12, i.e., a DCB board, for mounting the gallium nitride chip 11; the power assembly 1 further comprises a first soldering layer 13 and a second soldering layer 14; the first soldering layer 13 is located on one side surface of the circuit substrate 12 and is used for fixing the gallium nitride chip 11, and the second soldering layer 14 is located on at least part of the area of the first surface 31 and is used for fixing the circuit substrate 12. With the development of packaging technology, the wiring interval is smaller and smaller, the gallium nitride chip 11 in the accommodating cavity is connected through a bonding wire, in some embodiments, the bonding wire is set to be a copper wire, the copper wire has good shearing strength and extensibility compared with a gold wire with the same purity, under the condition of meeting the same welding strength, the copper wire with smaller diameter can be used for replacing the gold wire as the bonding wire, so that the interval of lead bonding is reduced, and meanwhile, the copper material is low in cost, high in hardness and high in strength, and is beneficial to protecting the radian of the lead during plastic package molding.
Further, in some embodiments, the circuit substrate 12 is made of gallium nitride, which has high hardness, better mechanical and electrical properties than the DCB board made of aluminum oxide in the prior art, better heat dissipation performance, and longer service life.
Specifically, the gallium nitride power module further includes a cooling device, the cooling device is closely attached to the second surface 32 of the bottom plate 3, and the second surface 32 is disposed opposite to the first surface 31 in the thickness direction of the bottom plate 3. Further, referring to fig. 3, in a preferred embodiment of the present utility model, the bottom plate 3 is a pin fin bottom plate, which includes a plurality of fins 6, the fins 6 are integrally formed with the bottom plate body, the fins 6 are protruded from the second surface 32 and are closely attached to the cooling device, so as to increase the heat exchange area and improve the heat dissipation effect; the fins 6 are made of metal, and have good thermal conductivity. In a preferred embodiment of the utility model, the cooling device is arranged to dissipate heat in a water-cooled manner.
The preparation method of the gallium nitride power module comprises the following steps,
Step 1, planning a patch position on a first surface 31 of a circuit substrate 12 and printing solder paste;
Step 2, placing the gallium nitride chip 11 at a solder paste printing position for carrying out surface mounting treatment;
Step 3, forming a first welding layer 13 by reflow welding, and connecting the gallium nitride chip 11 and the circuit substrate 12;
Step 4, bonding treatment is carried out between the gallium nitride chips 11 and copper wire connection is used;
Step 5, forming a second welding layer 14 by reflow welding, and connecting the circuit substrate 12 and the bottom plate 3;
Step 6, bonding the bottom plate 3 and the shell assembly 2 in a dispensing mode;
And 7, extruding epoxy resin into a die cavity to embed the gallium nitride power module, and performing plastic package molding after crosslinking and curing in the die cavity.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present utility model will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the utility model.
Claims (10)
1. A gallium nitride power module, characterized by comprising,
A power module including a gallium nitride chip and a circuit substrate for mounting the gallium nitride chip;
The shell assembly comprises a partition plate and at least three integrated areas, wherein the integrated areas are arranged along a first direction, and the partition plate is arranged between every two adjacent integrated areas;
The base plate is spliced with the shell component, the first surface of the base plate is used for sealing one side of the integration zone to form a plurality of accommodating cavities, and the accommodating cavities are used for accommodating a group of power components.
2. A gallium nitride power module according to claim 1, wherein: the plurality of accommodating cavities comprise a first accommodating cavity, a second accommodating cavity and a third accommodating cavity which are arranged along the first direction.
3. Gallium nitride power module according to claim 1 or 2, characterized in that: the shell assembly further comprises connecting terminals, the connecting terminals are respectively located at two ends of the accommodating cavity along a second direction, and the second direction is perpendicular to the first direction.
4. A gallium nitride power module according to claim 1, wherein: the cooling device is closely attached to the second surface of the bottom plate, and the second surface is opposite to the first surface in the thickness direction of the bottom plate.
5. The gallium nitride power module according to claim 4, wherein: the bottom plate also comprises fins, the fins are raised from the second surface and cling to the cooling device, and the fins are made of metal materials.
6. A gallium nitride power module according to claim 1, wherein: the power assembly further includes a first weld layer and a second weld layer; the first welding layer is positioned on one side surface of the circuit substrate and used for fixing the gallium nitride chip, and the second welding layer is positioned on at least part of the area of the first surface and used for fixing the circuit substrate.
7. Gallium nitride power module according to claim 1 or 6, characterized in that: the circuit substrate is made of gallium nitride material.
8. A gallium nitride power module according to claim 1, wherein: the gallium nitride chips in the accommodating cavity are connected through bonding wires.
9. The gallium nitride power module of claim 8, wherein: the bonding wire is arranged as a copper wire.
10. A gallium nitride power module according to claim 1, wherein: the bottom plate is adhered to the shell assembly in a dispensing mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322654272.0U CN221102058U (en) | 2023-09-27 | 2023-09-27 | Gallium nitride power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322654272.0U CN221102058U (en) | 2023-09-27 | 2023-09-27 | Gallium nitride power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221102058U true CN221102058U (en) | 2024-06-07 |
Family
ID=91303368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322654272.0U Active CN221102058U (en) | 2023-09-27 | 2023-09-27 | Gallium nitride power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221102058U (en) |
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2023
- 2023-09-27 CN CN202322654272.0U patent/CN221102058U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant |