CN212812189U - Stacking structure and touch sensor - Google Patents

Abstract

The utility model relates to a fold structure contains: a substrate; a metal layer disposed on the substrate, wherein the metal layer comprises: a metal wire; a metal mesh connected with the metal wire; and a metal plate connected to the metal mesh; and a nano-silver wire layer disposed on the substrate, wherein at least a portion of the nano-silver wire layer overlaps the metal layer. A touch sensor, comprising: the above-mentioned stacked structure; and a covering layer arranged on the metal layer or the nano-silver layer in the stacked structure. The stacked structure can be applied to a touch sensor.

Description

Stacking structure and touch sensor

Technical Field

The present invention relates to a laminated structure, and more particularly to a laminated structure including a metal layer having a metal grid and a metal plate. The present invention also relates to a touch sensor, and more particularly to a touch sensor including the above-mentioned stacked structure.

Background

The stacked structure comprising the silver nanowires and the metal layer can be applied to a touch sensor. In the fabrication method of the stacked structure in the prior art, the wiring area TA and the visible area VA are defined by a one-step etching process of developing with yellow light and matching with copper and nano silver. The prior art stacked structure formed by the above-mentioned fabrication method of stacked structure is shown in fig. 1, fig. 2 and fig. 3. Referring to fig. 1 and 2, a stack structure 10 of the prior art includes: a substrate 11; a metal layer 13 disposed on the substrate 11, wherein the metal layer 13 includes a metal sheet 131 and a metal wire 132; and a nano-silver wire layer 14 disposed on the metal layer 13. In addition, in another embodiment of the prior art stacking structure shown in fig. 3, the prior art stacking structure 10 further comprises: a catalyst layer 12 disposed between the substrate 11 and the metal layer 13. The prior art stacked structure comprises: a trace area TA including the metal wire 132; a first bonding region 15 including a region of the metal sheet 131 closer to the metal wire 132; a second bonding region 16 including a region of the metal sheet 131 farther from the metal wire 132; a visible area VA including an area adjacent to one side of the metal sheet 131, which is covered by the nano-silver wire layer 14 and not covered by the metal sheet 131.

In the stacked structure formed by the preparation method of the stacked structure in the prior art, the first bonding area 15 and the second bonding area 16 are both made of solid copper, and the process is complicated and expensive. Therefore, there is a need for a novel stacked structure and a touch sensor.

SUMMERY OF THE UTILITY MODEL

The utility model provides a novel stacked structure and touch sensor, which aims to solve the problems of more complicated and expensive manufacturing process of the preparation method of the stacked structure in the prior art.

To achieve the above and other objects, the present invention provides a stacking structure, comprising:

a substrate;

a metal layer disposed on the substrate, wherein the metal layer comprises:

a metal wire;

a metal mesh connected with the metal wire; and

a metal plate connected to the metal mesh; and

a layer of silver nanowires disposed on the substrate, wherein the layer of silver nanowires at least partially overlaps the metal layer.

In the stacked structure, the nano-silver wire layer may be disposed above the metal layer.

The above-mentioned stacked structure may further comprise:

a catalyst layer disposed below the metal layer.

In the stacked structure, the metal layer may be disposed above the nano-silver layer.

In the above stacked structure, the metal layer may be made of a material selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy, and silver-lead alloy.

In the above stacked structure, the material of the substrate may be selected from the group consisting of Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

The above stacked structure, wherein the stacked structure comprises: a routing area including the metal wire; a first overlap region comprising the metal mesh; a second lap joint region including the metal plate; and a visible region including a region adjacent to one side of the metal plate, the region being covered by the nano-silver wire layer and not covered by the metal plate, wherein the nano-silver wire layer may have a pattern corresponding to the metal layer in the routing region, the first overlapping region and the second overlapping region.

In the above stacked structure, the total width of the first and second overlapping regions may be less than 500 μm, and the ratio of the widths of the first and second overlapping regions may be between 0.05 and 20.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area may be between 0.5mm and 1.0mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area may be between 0.03 and 35.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area may be between 1.0mm and 1.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area may be between 0.02 and 50.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area may be between 1.5mm and 2.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area may be between 0.01 and 100.

In the above stacked structure, a ratio between a total width of the first and second overlapping areas and a width of the routing area may be 2:1, the metal layer may include 1 to 50 metal wires, and a ratio between the widths of the first and second overlapping areas may be 0.05 to 20.

In the above stacked structure, a ratio of a total width of the first and second overlapping regions to a width of the routing region may be 1:1, the metal layer may include 10 to 100 metal wires, and a ratio of the widths of the first and second overlapping regions may be between 0.03 and 35.

In the above stacked structure, a ratio between a total width of the first and second overlapping regions and a width of the routing region may be 3:1, the metal layer may include 1 to 50 metal wires, and a ratio between the widths of the first and second overlapping regions may be 0.02 to 50.

In the stacked structure, the pitch of the metal mesh in the first overlapping region may be 0.1 to 10 times the pitch of the metal wire, and the line width of the metal mesh in the first overlapping region may be 0.1 to 5 times the line width of the metal wire.

In the above stacked structure, the pitch of the metal wires may be 20 μm, the line width may be 10 μm, and the line distance may be 10 μm, and the pitch of the metal mesh in the first landing area may be between 2 μm and 200 μm, and the line width may be between about 2 μm and 50 μm.

The above stacked structure, wherein the line width/line distance of the metal mesh in the first overlapping region may be 5 μm/5 μm, 10 μm/5 μm, 15 μm/5 μm, 20 μm/5 μm, 40 μm/5 μm, 50 μm/150 μm, 40 μm/150 μm, 30 μm/150 μm or 20 μm/150 μm.

In the above stacked structure, the pitch of the metal wires may be 40 μm, the line width may be 20 μm, and the line distance may be 20 μm, and the pitch of the metal mesh in the first landing area may be between 4 μm and 400 μm, and the line width may be between about 4 μm and 100 μm.

The above stacked structure, wherein the line width/line distance of the metal mesh in the first overlapping region may be 20 μm/5 μm, 40 μm/5 μm, 80 μm/5 μm, 100 μm/5 μm, 20 μm/80 μm, 40 μm/60 μm, 100 μm/200 μm, or 100 μm/300 μm.

In the above stacked structure, the line width of the metal conductive line may be between 3 μm and 30 μm and the line pitch may be between 3 μm and 30 μm.

The above stacked structure may further include:

a bonding pad disposed on the substrate, comprising:

a bonding metal layer disposed on the substrate, wherein the bonding metal layer comprises:

bonding the metal grids; and

a bonding metal plate connected to the bonding metal grid; and

and the bonding nano silver wire layer is arranged on the substrate.

To achieve the above and other objects, the present invention also provides a touch sensor, comprising:

a stacked structure as described above;

and a capping layer disposed on the metal layer or the nano-silver layer in the stacked structure as described above.

The touch sensor may further include:

a second metal layer disposed under the substrate in the stacked structure, wherein the second metal layer comprises:

a second metal wire;

a second metal mesh connected to the second metal wire; and

a second metal plate connected to the second metal mesh;

a second layer of silver nanowires disposed below the substrate, wherein at least a portion of the second layer of silver nanowires overlaps the second metal layer; and

and a second covering layer arranged below the second metal layer and the second nano silver wire layer.

The utility model discloses a fold structure and contain this consumption of the reducible metal raw materials of touch-control inductor that folds the structure to reduce and fold the structure and contain this preparation cost that folds the touch-control inductor that constructs the structure.

Drawings

Fig. 1 is a schematic diagram of a prior art stacked structure.

Fig. 2 is a schematic cross-sectional view of a prior art stacked structure.

Fig. 3 is a schematic cross-sectional view of another embodiment of a prior art stacked structure.

Fig. 4 is a flow chart of a method for manufacturing a stacked structure according to the present invention.

Fig. 5 is a schematic diagram of an exemplary flexographic printing technique.

Fig. 6 is a schematic view of the stacked structure according to embodiment 2 of the present invention.

Fig. 7 is a schematic cross-sectional view of the stacked structure according to embodiment 2 of the present invention along the a-a section.

Fig. 8 is a schematic cross-sectional view of the stacked structure according to embodiment 2 of the present invention along the B-B section.

Fig. 9 is a schematic view of a stacked structure according to embodiment 3 of the present invention.

Fig. 10 is a schematic cross-sectional view of the stacked structure according to embodiment 3 of the present invention along the a-a section.

Fig. 11 is a schematic cross-sectional view of the stacked structure according to embodiment 3 of the present invention along the B-B section.

Fig. 12 is a schematic cross-sectional view of the stacked structure according to embodiment 3 of the present invention along the C-C section.

Fig. 13 is a schematic view of a touch sensor according to embodiment 4 of the present invention.

Fig. 14 is a schematic cross-sectional view of the stacked structure according to embodiment 4 of the present invention along the a-a section.

Fig. 15 is a schematic cross-sectional view of the stacked structure according to embodiment 4 of the present invention along the B-B section.

Fig. 16 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 5 of the present invention.

Fig. 17 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 6 of the present invention.

Fig. 18 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 7 of the present invention.

Fig. 19 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 8 of the present invention.

Fig. 20 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 9 of the present invention.

Fig. 21 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 10 of the present invention.

Description of reference numerals:

method for preparing 1-stacked structure

2 ink supply device

3 Anilox roll

4 scraper

5 printing plate cylinder

6 flexible plate

7 printed matter

10-fold structure

11 base material

12 catalyst layer

13 Metal layer

131 metal sheet

132 metal wire

14 nm silver wire layer

15 first overlap region

16 second overlap region

20-fold structure

21 base material

22 metal layer

221 metal conductor

222 metal grid

223 metal plate

23 nm silver wire layer

25 first overlap region

26 second overlap region

30-fold structure

31 base material

32 metal layer

32' bonding metal layer

321 metal conducting wire

322 metal grid

322' bonded metal mesh

323 metallic plate

323' joining metal plates

33 nanometer silver wire layer

33' bonding of silver nanowire layers

333 catalyst layer

35 first overlap region

36 second overlap region

39 bonding pad

40-fold structure

41 base material

42 metal layer

421 metal wire

422 metal grid

423 metal plate

43 nm silver wire layer

45 first overlap region

46 second overlap region

50-fold structure

50' touch sensor

51 base material

52 metal layer

521 metal wire

522 metal grid

523 metal plate

53 nm silver wire layer

54 etch resistant layer

541 conducting wire pattern

542 grid pattern

543 area of coverage

55 first overlap region

56 second overlap region

57 coating layer

60-fold structure

61 base material

62 Metal layer

62' second metal layer

621 metal conducting wire

621' second metal wire

622 metal grid

622' second metal grid

623 Metal plate

623' second metal plate

63 nm silver wire layer

63' second silver nanowire layer

64 etch resistant layer

64' second etch resist layer

65 first overlap region

66 second overlap region

67 coating layer

67' second cover layer

70-fold structure

70' touch sensor

71 base material

72 metal layer

721 metal wire

722 metal grid

723 Metal plate

73 nm silver wire layer

733 catalyst layer

74 etch resist layer

741 conductor pattern

742 grid pattern

743 coverage area

75 first overlap region

76 second overlap region

77 covering layer

80-fold structure

81 base material

82 metal layer

82' second metal layer

821 metal wire

821' second metal conductor

822 metal mesh

822' second metal grid

823 metal plate

823' second Metal plate

83 nanometer silver line layer

83' second silver nanowire layer

833 catalyst layer

833' second catalyst layer

84 etch resist layer

84' second etch resist layer

85 first overlap region

86 second overlap region

87 cover layer

87' second cover layer

90-fold structure

90' touch sensor

91 base material

92 metal layer

921 metal lead

922 metal mesh

923 metal plate

93 nm silver wire layer

94 etch resistant layer

941 pattern of conductive lines

942 grid pattern

943 area of coverage

95 first overlap region

96 second overlap region

97 coating layer

100 stacking structure

101 base material

102 metal layer

102' second metal layer

1021 metal lead

1021' second metal wire

1022 metallic grid

1022' second metal grid

1023 Metal plate

1023' second metal plate

103 nm silver wire layer

103' second silver nanowire layer

104 etch resistant layer

104' second etch resist layer

105 first overlap region

106 second overlap region

107 cover layer

107' second cover layer

Step S1

Step S2

Step S3

Step S4

TA routing area

VA visual area

Section A-A

Section B-B

C-C section

D part of the design reside in

E part

F part

G local part

H local

I local part

Detailed Description

The following description of the embodiments of the present invention is provided for illustrative purposes, and it is to be understood that the present invention is not limited to the specific embodiments disclosed herein. The present invention can be implemented or applied by other different embodiments, and various details in the present specification can be modified and changed based on different viewpoints and applications without departing from the spirit of the present invention.

As used in the specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise.

As used in the specification and the appended claims, the term "or" includes "and/or" is used in its sense unless the context clearly dictates otherwise.

The "width" of the first and second overlapping regions as described herein refers to the width of the first and second overlapping regions in the a-a section as shown in fig. 8.

The Pitch (Pitch) as used herein refers to the shortest distance between the central axis of a metal wire and the central axis of another adjacent metal wire, or the shortest distance between the central axis of a metal wire in a metal grid and the central axis of another adjacent metal wire.

The "line pitch" as used herein refers to the shortest distance between an edge of a metal wire and an edge of another adjacent metal wire, or the shortest distance between an edge of a metal line in a metal mesh and an edge of another adjacent metal line.

Example 1

Fig. 4 is a flowchart of a method for manufacturing a stacked structure according to embodiment 1 of the present invention. As shown in fig. 4, the method 1 for preparing a stacked structure according to embodiment 1 of the present invention includes: providing a substrate S1; disposing a metal layer and a nano-silver layer S2 on the substrate; applying a flexographic printing technique to print an etching-resistant layer on the surface of the metal layer or the nano-silver wire layer so that the etching-resistant layer partially covers the metal layer or the nano-silver wire layer, wherein the etching-resistant layer comprises: a conductor pattern; a mesh pattern connected with the conductive line pattern; and a covering region covering the metal layer or the nano-silver wire layer and connected with the mesh pattern S3; and removing the part which is not covered by the anti-etching layer and the metal layer or the nano-silver wire layer below the metal layer or the nano-silver wire layer by using an etching technology through an etching solution, thereby enabling the metal layer to comprise: a metal wire corresponding to the wire pattern of the etch-resistant layer; a metal grid corresponding to the grid pattern of the anti-etching layer and connected with the metal wire; and a metal plate corresponding to the coverage area of the etch-resistant layer and connected to the metal mesh S4; and removing the etch resist S5.

The material of the substrate used in step S1 of the preparation method of the present embodiment is not particularly limited, and suitable materials include, but are not limited to, Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

In step S2 of the manufacturing method of the present embodiment, a metal layer and a silver nanowire layer are disposed on the substrate by applying the conventional technique. For example, electroless plating, sputtering, or photolithography may be used to place the metal layer over the substrate. For example, the silver nanowire layer can be disposed on the substrate by coating, and the relative positions of the metal layer and the silver nanowire layer are not particularly limited, and in one embodiment, the silver nanowire layer is disposed on the metal layer; in yet another embodiment, the metal layer is disposed above the layer of nanosilver. The composition of the metal layer is not particularly limited as long as appropriate conductivity can be provided. For example, the material of the metal layer may be copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy and/or silver-lead alloy, but the present invention is not limited thereto.

In step S3 of the manufacturing method of this embodiment, an etching-resistant layer is printed on the metal layer or the nano-silver layer by applying the existing flexographic printing technology. The material of the etch-resistant layer in step S3 is not particularly limited as long as it can ensure that the portion of the metal layer or the nano-silver wire layer covered by the etch-resistant layer is not etched by the etching solution in the subsequent step S4.

In step S4 of the manufacturing method of this embodiment, a conventional etching technique is applied to remove the portion of the metal layer or the nano-silver wire layer not covered by the etching-resistant layer and the metal layer or the nano-silver wire layer thereunder with an etching solution. The etching solution used in step S4 is not particularly limited as long as it can remove the metal layer or the nano-silver wire layer not covered by the etching-resistant layer and the metal layer or the nano-silver wire layer thereunder by etching twice in one step or in batches.

The etching resist layer printed in step S3 of the manufacturing method of the present embodiment includes: a conductor pattern; a mesh pattern connected with the conductive line pattern; and a covering region covering the metal layer or the nano-silver wire layer and connected with the grid pattern, thereby making the metal layer include, after etching, in the subsequent step S4: a metal wire corresponding to the wire pattern of the etch-resistant layer; a metal grid corresponding to the grid pattern of the anti-etching layer and connected with the metal wire; and a metal plate corresponding to the coverage area of the etching-resistant layer and connected with the metal grid. By the above technical means, the stacked structure manufactured by the manufacturing method of the present embodiment may have the structure described in the following embodiment 2, embodiment 3, or embodiment 4, so that it can be applied to a touch sensor.

Fig. 5 exemplarily illustrates the flexographic printing technique applied in step S3 of the manufacturing method of the present embodiment, but the present invention is not limited thereto. As shown in fig. 5, an exemplary flexographic printing technique applies an ink supply 2 to drop ink onto an Anilox roller 3, and then scrapes off excess ink on the Anilox roller 3 by a doctor blade 4. Next, the ink on the anilox roller 3 is transferred onto a flexographic Plate 6 on a Plate cylinder 5. Finally, the ink on the flexible plate 6 is transferred to the printed matter 7 to print a desired pattern on the printed matter 7.

Example 2

Fig. 6, 7 and 8 are schematic views of the stacked structure according to embodiment 2 of the present invention. As shown in fig. 6, 7 and 8, the stacking structure 20 of the present embodiment includes: a substrate 21 (not shown in fig. 6); a metal layer 22 disposed on the substrate 21, wherein the metal layer 22 comprises: a metal wire 221; a metal mesh 222 connected to the metal wire 221; and a metal plate 223 connected to the metal mesh 222; and a nano-silver wire layer 23 disposed on the substrate 21, wherein the nano-silver wire layer 23 at least partially overlaps the metal layer 22.

The stack structure 20 of the present embodiment includes: a trace area TA including the metal wire 221; a first lap joint region 25 comprising the metal mesh 222; a second lap joint region 26 including the metal plate 223; a visible area VA including an area adjacent to one side of the metal plate 223 and covered by the nano-silver wire layer 23 and not covered by the metal plate 223, wherein the nano-silver wire layer 23 has a pattern corresponding to the metal layer 22 in the routing area TA, the first bonding area 25 and the second bonding area 26.

In the stacked structure 20 of the present embodiment, the nano-silver wire layer 23 is located on the metal layer 22, but the present invention is not limited thereto. That is, the relative positions of the metal layer and the nano silver layer in the stacked structure of the present invention can be exchanged.

The material of the substrate in the stacked structure of the present embodiment is not particularly limited, and suitable materials include, but are not limited to, Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

The composition of the metal layer in the stacked structure of the present embodiment is not particularly limited as long as it provides appropriate conductivity. For example, the material of the metal layer may be copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy and/or silver-lead alloy, but the present invention is not limited thereto.

In a preferred embodiment, the total width of the first overlapping region and the second overlapping region in the stacked structure of the present embodiment is less than 500 μm, and the ratio of the width of the first overlapping region to the width of the second overlapping region is between 0.05 and 20.

In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of the present embodiment is between 0.5mm and 1.0mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.03 and 35.

In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of the present embodiment is between 1.0mm and 1.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.02 and 50.

In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of the present embodiment is between 1.5mm and 2.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.01 and 100.

In a preferred embodiment, in the stacked structure of the present embodiment, a ratio of a total width of the first and second overlapping areas to a width of the routing area is 2:1, and the metal layer includes 1 to 50 metal wires, and a ratio of the widths of the first and second overlapping areas is between 0.05 to 20.

In a preferred embodiment, in the stacked structure of the present embodiment, a ratio of a total width of the first and second bonding regions to a width of the routing region is 1:1, and the metal layer includes 10 to 100 metal wires, and a ratio of the widths of the first and second bonding regions is between 0.03 and 35.

In a preferred embodiment, in the stacked structure of the present embodiment, a ratio of a total width of the first and second overlapping regions to a width of the routing region is 3:1, and the metal layer includes 1 to 50 metal wires, and a ratio of the widths of the first and second overlapping regions is between 0.02 to 50.

In a preferred embodiment, in the stacked structure of the present embodiment, the pitch of the metal mesh in the first bonding region is 0.1 to 10 times the pitch of the metal conductive line, and the line width of the metal mesh in the first bonding region is 0.1 to 5 times the line width of the metal conductive line.

In a preferred embodiment, the pitch of the metal wires in the stacked structure of the present embodiment is 20 μm, the line width is 10 μm, and the line distance is 10 μm, and the pitch of the metal mesh in the first landing area is between 2 μm and 200 μm, and the line width is between about 2 μm and 50 μm.

In a preferred embodiment, the line width/line distance of the metal grid in the first overlapping region in the stacked structure of the embodiment is 5 μm/5 μm, 10 μm/5 μm, 15 μm/5 μm, 20 μm/5 μm, 40 μm/5 μm, 50 μm/150 μm, 40 μm/150 μm, 30 μm/150 μm or 20 μm/150 μm.

In a preferred embodiment, the pitch of the metal wires in the stacked structure of the embodiment is 40 μm, the line width is 20 μm, and the line distance is 20 μm, and the pitch of the metal mesh in the first landing area is between 4 μm and 400 μm, and the line width is between about 4 μm and 100 μm.

In a preferred embodiment, the line width/line distance of the metal mesh in the first overlapping region in the stacked structure of the embodiment is 20 μm/5 μm, 40 μm/5 μm, 80 μm/5 μm, 100 μm/5 μm, 20 μm/80 μm, 40 μm/60 μm, 100 μm/200 μm or 100 μm/300 μm.

In a preferred embodiment, the line width of the metal conductive line in the stacked structure of the present embodiment is between 3 μm and 30 μm and the line pitch is between 3 μm and 30 μm.

In the above preferred embodiment, the total width of the first overlapping area and the second overlapping area is controlled within a specific range, so as to further improve the reliability of the touch sensor including the stacked structure, but the present invention is not limited thereto, and those skilled in the art can make appropriate adjustments according to the size of the stacked structure.

In the above preferred embodiment, the ratio between the total width of the first overlapping area and the second overlapping area and the width of the routing area is controlled within a specific range, so as to further improve the reliability of the touch sensor including the stacked structure.

For example, the stacked structure of the present embodiment can be prepared by the preparation method described in example 1, but the present invention is not limited thereto.

Example 3

Fig. 9, 10, 11, and 12 are schematic views of the stacked structure according to embodiment 3 of the present invention. As shown in fig. 9, 10, 11 and 12, the stacked structure 30 of the present embodiment includes: substrate 31 (not shown in fig. 9); a metal layer 32 disposed on the substrate 31, wherein the metal layer 32 comprises: a metal wire 321; a metal mesh 322 connected to the metal wire 321; and a metal plate 323 connected to the metal mesh 322; and a nano-silver wire layer 33 disposed on the substrate 31, wherein the nano-silver wire layer 33 at least partially overlaps the metal layer 32.

The stacking structure 30 of the present embodiment includes: a trace area TA including the metal wire 321; a first lap joint region 35 comprising the metal mesh 322; a second lap joint region 36 including the metal plate 323; a visible area VA including an area adjacent to one side of the metal plate 323, the area being covered by the nano-silver wire layer 33 and not covered by the metal plate 323, wherein the nano-silver wire layer 33 has a pattern corresponding to the metal layer 32 in the trace area TA, the first lap joint area 35 and the second lap joint area 36.

Compared to embodiment 2, the stacked structure 30 of the present embodiment further includes:

a catalyst layer 333 (not shown in fig. 9) disposed below the metal layer 32.

With the catalyst layer 333 of the present embodiment, an electroless plating technique may be applied to plate the metal layer 32 on the catalyst layer 333, thereby providing the metal layer 32.

Compared to embodiment 2, the stacked structure 30 of the present embodiment further includes: a bonding pad 39 disposed on the substrate 31, comprising: a bonding metal layer 32 'disposed on the substrate 31, wherein the bonding metal layer 32' comprises: bonding the metal mesh 322'; and a bonding metal plate 323 'connected to the bonding metal grid 322'; and a bonding nanosilver layer 33' disposed on the substrate 31.

The bonding pad of the present embodiment can be used as a contact for connecting with an external circuit.

Example 4

Fig. 13, 14 and 15 are schematic views of the stacked structure according to embodiment 4 of the present invention. As shown in fig. 13, 14 and 15, the stacking structure 40 of the present embodiment includes: a substrate 41 (not shown in fig. 13); a metal layer 42 disposed on the substrate 41, wherein the metal layer 42 comprises: a metal wire 421; a metal mesh 422 connected to the metal wire 421; and a metal plate 423 connected to the metal mesh 422; and a layer 43 of silver nanowires disposed on the substrate 41, wherein the layer 43 of silver nanowires at least partially overlaps the metal layer 42.

The stacked structure 40 of the present embodiment includes: a trace area TA including the metal wire 421; a first overlap region 45 comprising the metal mesh 422; a second lap joint region 46 including the metal plate 423; a visible area VA including an area adjacent to one side of the metal plate 423, which is covered by the nano-silver wire layer 43 and not covered by the metal plate 423, wherein the nano-silver wire layer 43 has a pattern corresponding to the metal layer 42 in the routing area TA, the first bonding area 45 and the second bonding area 46.

Compared to embodiment 2, the metal layer 42 of the stacked structure 40 of the present embodiment is located on the nano-silver wire layer 43.

Example 5

Fig. 16 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 5 of the present invention, and fig. 16 sequentially shows from top to bottom: 1. a schematic diagram of a nano-silver layer 53 and a metal layer 52 disposed on a substrate 51; 2. after the etching-resistant layer 54 is printed on the surface of the nano-silver wire layer 53; 3. a schematic diagram of a part D after removing a portion of the nano silver wire layer 53 not covered by the etching resist layer 54 and the metal layer 52 thereunder with an etching solution; and 4. schematic view of part D after disposing the capping layer 57 on the nano-silver wire layer 53. As shown in fig. 16, the touch sensor 50' of the present embodiment has the stack structure 50 as described in embodiment 2.

The stacked structure 50 of the touch sensor 50' of the present embodiment includes: a base material 51; a metal layer 52 disposed on the substrate 51, wherein the metal layer 52 comprises: a metal wire 521; a metal mesh 522 connected to the metal wire 521; and a metal plate 523 connected to the metal mesh 522; and a layer 53 of silver nanowires disposed on the substrate 51, wherein the layer 53 of silver nanowires at least partially overlaps the metal layer 52. Wherein the nano-silver wire layer 53 is disposed on the metal layer 52.

The stack structure 50 of the present embodiment includes: a trace area TA including the metal wire 521; a first lap joint region 55 comprising the metal mesh 522; a second lap joint region 56 including the metal plate 523; a visible area VA including an area adjacent to one side of the metal plate 523, the area being covered by the nano-silver wire layer 53 and not covered by the metal plate 523, wherein the nano-silver wire layer 53 has a pattern corresponding to the metal layer 52 in the routing area TA, the first bonding area 55 and the second bonding area 56.

Compared to embodiment 2, the touch sensor 50' of the present embodiment further includes a covering layer 57 disposed on the nano-silver wire layer 53.

As shown in fig. 16, an exemplary process of manufacturing the touch sensor 50' of the present embodiment includes:

providing a substrate 51;

disposing a metal layer 52 and a nano-silver wire layer 53 on the substrate 51, wherein the nano-silver wire layer 53 is disposed on the metal layer 52;

applying a flexographic printing technique to print an etching-resistant layer 54 on the surface of the nano-silver wire layer 53, so that the etching-resistant layer 54 partially covers the nano-silver wire layer 53, wherein the etching-resistant layer 54 comprises:

a wiring pattern 541;

a mesh pattern 542 connected to the wire pattern 541; and

a covering region 543 covering the nano-silver line layer 53 and connected with the mesh pattern 542;

using an etching technique to remove the portion of the nano-silver wire layer 53 not covered by the etching-resistant layer 54 and the metal layer 52 thereunder with an etching solution, thereby making the metal layer 52 include:

a metal wire 521 corresponding to the wire pattern 541 of the etch resist layer 54;

a metal mesh 522 corresponding to the mesh pattern 542 of the etch resist layer 54 and connected to the metal wire 521; and

a metal plate 523 corresponding to the covering region 543 of the anti-etching layer 54 and connected to the metal mesh 522;

removing the etch-resistant layer 54; and

a capping layer 57 is disposed on the nano-silver wire layer 53.

Example 6

Fig. 17 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 6 of the present invention, and fig. 17 sequentially shows from top to bottom: 1. a schematic diagram of a nano-silver wire layer 63 and a metal layer 62 disposed above a substrate 61, and a second nano-silver wire layer 63 'and a second metal layer 62' disposed below the substrate 61; 2. after the etching-resistant layer 64 is printed on the surface of the nano-silver wire layer 63 and the second etching-resistant layer 64 'is printed on the surface of the second nano-silver wire layer 63'; 3. a schematic diagram of a part E after removing a portion of the nano-silver wire layer 63 not covered by the etching resist layer 64 and the metal layer 62 thereunder with an etching solution and simultaneously removing a portion of the second nano-silver wire layer 63' not covered by the second etching resist layer 64' and the second metal layer 62' thereabove; and 4. schematic view of a portion E after disposing a capping layer 67 on the nano-silver wire layer 63 and disposing a second capping layer 67 'under the second nano-silver wire layer 63'. Compared with embodiment 5, the touch sensor of the present embodiment has the stacked structure as described in embodiment 2 on both sides of the substrate.

The stacked structure 60 of the touch sensor 60' of the present embodiment includes: a substrate 61; a metal layer 62 disposed on the substrate 61, wherein the metal layer 62 comprises: a metal wire 621; a metal mesh 622 connected to the metal wire 621; and a metal plate 623 connected to the metal mesh 622; and a nano-silver wire layer 63 disposed on the substrate 61, wherein the nano-silver wire layer 63 at least partially overlaps the metal layer 62. Wherein the nano-silver wire layer 63 is disposed on the metal layer 62.

The stacking structure 60 of the present embodiment includes: a trace area TA including the metal wire 621; a first lap joint region 65 comprising the metal grid 622; a second lap joint region 66 including the metal plate 623; a visible area VA including an area adjacent to one side of the metal plate 623 and not covered by the metal plate 623, wherein the nano-silver layer 63 has a pattern corresponding to the metal layer 62 in the routing area TA, the first bonding area 65 and the second bonding area 66.

Compared to embodiment 2, the touch sensor 60' of the present embodiment further includes a covering layer 67 disposed on the nano-silver wire layer 63.

Compared to embodiment 5, the touch sensor 60' of the present embodiment further includes: a second metal layer 62 'disposed below the substrate 61, wherein the second metal layer 62' comprises: a second metal wire 621'; a second metal mesh 622 'connected to the second metal wire 621'; and a second metal plate 623 'connected to the second metal grid 622'; a second layer 63' of nanosilver disposed below the substrate 61, wherein the second layer 63' of nanosilver at least partially overlaps the second metal layer 62 '. Wherein the second layer 63 'of nano-silver wires is disposed under the second metal layer 62'; and a second capping layer 67 'disposed under the second nano-silver wire layer 63'.

As shown in fig. 17, an exemplary process of manufacturing the touch sensor 60' of the present embodiment includes:

providing a substrate 61;

disposing a metal layer 62 and a nano-silver wire layer 63 above the substrate 61, wherein the nano-silver wire layer 63 is disposed above the metal layer 62, and disposing a second metal layer 62 'and a second nano-silver wire layer 63' below the substrate 61, wherein the second nano-silver wire layer 63 'is disposed below the second metal layer 62';

applying a flexographic printing technique to print an etching-resistant layer 64 on the surface of the nano-silver wire layer 63 such that the etching-resistant layer 64 partially covers the nano-silver wire layer 63, wherein the etching-resistant layer 64 comprises:

a conductive line pattern 641;

a mesh pattern 642 connected to the conductive line pattern 641; and

a covering region 643 covering the nano-silver wire layer 63 and connected with the mesh pattern 642 and

simultaneously printing a second etch resist layer 64' on the surface of the second silver nanowire layer 63' such that the second etch resist layer 64' partially covers the second silver nanowire layer 63', wherein the second etch resist layer 64' comprises:

the second conductive line pattern 641';

a second mesh pattern 642 'connected with the second conductive line pattern 641'; and

a second cover region 643' covering the second nano-silver line layer 63' and connected to the second mesh pattern 642 ';

using an etching technique to remove the portion of the nano-silver wire layer 63 not covered by the etching-resistant layer 64 and the metal layer 62 therebelow with an etching solution, thereby making the metal layer 62 include:

a metal wire 621 corresponding to the wire pattern 641 of the etch resist 64;

a metal mesh 622 corresponding to the mesh pattern 642 of the etch resist layer 64 and connected to the metal wire 621; and

a metal plate 623 corresponding to the covering region 643 of the etching-resistant layer 64 and connected with the metal grid 622

Simultaneously removing the portion of the second nano-silver wire layer 63 'not covered by the second etching resistant layer 64' and the second metal layer 62 'thereon by using an etching solution, thereby making the second metal layer 62' include:

a second metal wire 621' corresponding to the second wire pattern 641' of the second etch resist 64 ';

a second metal mesh 622 'corresponding to the second mesh pattern 642' of the second etch resist layer 64 'and connected to the second metal conductive line 621'; and

a second metal plate 623 'corresponding to the second cap region 643' of the second etching resist 64 'and connected to the second metal grid 622';

removing the etch-resistant layer 64 and the second etch-resistant layer 64'; and

a capping layer 67 is disposed on the silver nanowire layer 63 and a second capping layer 67 'is disposed under the second silver nanowire layer 63'.

Example 7

Fig. 18 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 7 of the present invention, and from top to bottom in fig. 18, the sequence is: 1. a schematic diagram of a nano-silver wire layer 73, a metal layer 72 and a catalyst layer 733 disposed on a substrate 71; 2. after the etching-resistant layer 74 is printed on the surface of the nano-silver wire layer 73; 3. a schematic diagram of a part F after removing a portion of the nano silver wire layer 73 not covered by the anti-etching layer 74 and the metal layer 72 thereunder with an etching solution; and 4. schematic view of part F after disposing the capping layer 77 on the nano-silver wire layer 73. As shown in fig. 18, the touch sensor 70' of the present embodiment has the stacked structure 70 as described in embodiment 3, but the bonding pads are omitted.

The stacked structure 70 of the touch sensor 70' of the present embodiment includes: a base material 71; a metal layer 72 disposed on the substrate 71, wherein the metal layer 72 comprises: a metal wire 721; a metal mesh 722 connected to the metal wire 721; and a metal plate 723 connected to the metal mesh 722; a catalyst layer 733 provided under the metal layer 72; and a layer 73 of nanosilver disposed on the substrate 71, wherein the layer 73 of nanosilver at least partially overlaps the metal layer 72. Wherein the nano-silver wire layer 73 is disposed on the metal layer 72.

The stack structure 70 of the present embodiment includes: a trace area TA including the metal wire 721; a first lap joint region 75 comprising the metal mesh 722; a second lap joint region 76 including the metal plate 723; a visible area VA including an area adjacent to one side of the metal plate 723, which is covered by the nano-silver wire layer 73 and is not covered by the metal plate 723, wherein the nano-silver wire layer 73 has a pattern corresponding to the metal layer 72 in the routing area TA, the first lap joint area 75 and the second lap joint area 76.

Compared to embodiment 3, the touch sensor 70' of the present embodiment further includes a covering layer 77 disposed on the nano-silver wire layer 73.

As shown in fig. 18, an exemplary process of manufacturing the touch sensor 70' of the present embodiment includes:

providing a substrate 71;

disposing a metal layer 72 and a nano-silver wire layer 73 on the substrate 71, wherein the nano-silver wire layer 73 is disposed on the metal layer 72, wherein a catalyst layer 733 is disposed on the substrate 71, and the metal layer 72 is plated on the catalyst layer 733 by applying an electroless plating technique, thereby disposing the metal layer 72;

applying a flexographic printing technique to print an etching-resistant layer 74 on the surface of the nano-silver wire layer 73 such that the etching-resistant layer 74 partially covers the nano-silver wire layer 73, wherein the etching-resistant layer 74 comprises:

a wiring pattern 741;

a mesh pattern 742 connected to the conductive line pattern 741; and

a cover region 743 covering the nano-silver line layer 73 and connected with the mesh pattern 742;

using an etching technique, removing the portion of the nano-silver wire layer 73 not covered by the etching-resistant layer 74 and the metal layer 72 thereunder with an etching solution, thereby making the metal layer 72 include:

a metal wire 721 corresponding to the wire pattern 741 of the etch resist layer 74;

a metal mesh 722 corresponding to the mesh pattern 742 of the etch resist layer 74 and connected to the metal wire 721; and

a metal plate 723 corresponding to the capping region 743 of the etch-resistant layer 74 and connected to the metal mesh 722;

removing the etch resist layer 74; and

a capping layer 77 is disposed on the nano-silver wire layer 73.

Example 8

Fig. 19 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 8 of the present invention, and fig. 19 sequentially shows from top to bottom: 1. a schematic diagram after a nano-silver wire layer 83, a metal layer 82 and a catalyst layer 833 are disposed above a substrate 81, and a second nano-silver wire layer 83', a second metal layer 82' and a second catalyst layer 833' are disposed below the substrate 81; 2. after the etching-resistant layer 84 is printed on the surface of the nano-silver layer 83 and the second etching-resistant layer 84 'is printed on the surface of the second nano-silver layer 83'; 3. a schematic diagram of a part G after removing a portion of the nano-silver wire layer 83 not covered by the etching resist layer 84 and the metal layer 82 therebelow with an etching solution and simultaneously removing a portion of the second nano-silver wire layer 83' not covered by the second etching resist layer 84' and the second metal layer 82' thereabove; and 4. schematic illustration of a portion G after disposing a capping layer 87 on the nano-silver wire layer 83 and disposing a second capping layer 87 'under the second nano-silver wire layer 83'. Compared to embodiment 7, the touch sensor of this embodiment has the stacked structure as described in embodiment 3 on both sides of the substrate, but omits the bonding pad.

The stacked structure 80 of the touch sensor 80' of the present embodiment includes: a substrate 81; a metal layer 82 disposed on the substrate 81, wherein the metal layer 82 comprises: a metal wire 821; a metal mesh 822 connected to the metal wire 821; and a metal plate 823 connected to the metal mesh 822; a catalyst layer 833 disposed under the metal layer 82; and a layer 83 of silver nanowires disposed on the substrate 81, wherein the layer 83 of silver nanowires at least partially overlaps the metal layer 82. The nano-silver wire layer 83 is disposed on the metal layer 82.

The stacked structure 80 of the present embodiment includes: a routing area TA including the metal wire 821; a first lap joint region 85 comprising the metal grid 822; a second lap joint area 86 comprising the metal plate 823; a visible area VA including an area adjacent to one side of the metal plate 823, which is covered by the nano-silver wire layer 83 and not covered by the metal plate 823, wherein the nano-silver wire layer 83 has a pattern corresponding to the metal layer 82 in the routing area TA, the first lap joint area 85 and the second lap joint area 86.

Compared to embodiment 3, the touch sensor 80' of the present embodiment further includes a covering layer 87 disposed on the nano-silver wire layer 83.

Compared to the touch sensor 80' of the embodiment 7, the touch sensor further includes: a second metal layer 82 'disposed below the substrate 81, wherein the second metal layer 82' comprises: a second metal wire 821'; a second metal mesh 822 'connected to the second metal wire 821'; and a second metal plate 823 'connected to the second metal grid 822'; a second catalyst layer 833 'disposed under the metal layer 82'; a second layer 83' of nano-silver wires disposed under the substrate 81, wherein the second layer 83' of nano-silver wires at least partially overlaps the second metal layer 82 '. Wherein the second layer 83 'of nano-silver wires is disposed under the second metal layer 82'; and a second capping layer 87 'disposed under the nano-silver wire layer 83'.

As shown in fig. 19, an exemplary process of manufacturing the touch sensor 80' of the present embodiment includes:

providing a substrate 81;

disposing a metal layer 82 and a nano-silver wire layer 83 above the substrate 81, wherein the nano-silver wire layer 83 is disposed above the metal layer 82, and disposing a second metal layer 82 'and a second nano-silver wire layer 83' below the substrate 81, wherein the second nano-silver wire layer 83 'is disposed below the second metal layer 82', wherein a catalyst layer 833 is disposed above the substrate 81, and the metal layer 82 is plated on the catalyst layer 833 by applying an electroless plating technique, thereby disposing the metal layer 82, and disposing a second catalyst layer 833 'below the substrate 81, and the second metal layer 82' is plated below the second catalyst layer 833 'by applying an electroless plating technique, thereby disposing the second metal layer 82';

applying a flexographic printing technique to print an etching-resistant layer 84 on the surface of the nano-silver wire layer 83, so that the etching-resistant layer 84 partially covers the nano-silver wire layer 83, wherein the etching-resistant layer 84 comprises:

a conductive line pattern 841;

a mesh pattern 842 connected with the wire pattern 841; and

a covering region 843 covering the nano-silver wire layer 83 and connected with the grid pattern 842

Simultaneously printing a second etch resist layer 84' on the surface of the second silver nanowire layer 83' such that the second etch resist layer 84' partially covers the second silver nanowire layer 83', wherein the second etch resist layer 84' comprises:

a second conductive line pattern 841';

a second mesh pattern 842 'connected with the second wire pattern 841'; and

a second cover region 843' covering the second nano-silver line layer 83' and connected to the second grid pattern 842 ';

using an etching technique, the portion of the nano-silver wire layer 83 not covered by the etching-resistant layer 84 and the metal layer 82 therebelow are removed by an etching solution, so that the metal layer 82 comprises:

a metal wire 821 corresponding to the wire pattern 841 of the etch resist layer 84;

a metal mesh 822 corresponding to the mesh pattern 842 of the etch resist 84 and connected to the metal wire 821; and

a metal plate 823 corresponding to the covering region 843 of the anti-etching layer 84 and connected to the metal grid 822

Simultaneously removing the portion of the second nano-silver wire layer 83 'not covered by the second anti-etching layer 84' and the second metal layer 82 'above the second nano-silver wire layer with an etching solution, thereby making the second metal layer 82' include:

a second metal wire 821' corresponding to the second wire pattern 841' of the second etch resist layer 84 ';

a second metal mesh 822 'corresponding to the second mesh pattern 842' of the second etch resist layer 84 'and connected to the second metal wire 821'; and

a second metal plate 823 'corresponding to the second coverage area 843' of the second anti-etching layer 84 'and connected to the second metal mesh 822';

removing the etch-resistant layer 84 and the second etch-resistant layer 84'; and

a capping layer 87 is disposed above the layer of nanosilver 83 and a second capping layer 87 'is disposed below the second layer of nanosilver 83'.

Example 9

Fig. 20 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 9 of the present invention, and fig. 20 sequentially shows from top to bottom: 1. a schematic diagram of a nano-silver layer 93 and a metal layer 92 disposed on a substrate 91; 2. after the etching-resistant layer 94 is printed on the surface of the metal layer 92; 3. a schematic diagram of a part H after removing a part of the metal layer 92 which is not covered by the anti-etching layer 94 and the underlying nano-silver layer 93 by using an etching solution; and 4. schematic view of a portion H after a capping layer 97 is disposed on the metal layer 92. As shown in fig. 20, the touch sensor 90' of the present embodiment has the stack structure 90 as described in embodiment 4.

The stack structure 90 of the touch sensor 90' of the present embodiment includes: a base material 91; a metal layer 92 disposed on the substrate 91, wherein the metal layer 92 comprises: a metal wire 921; a metal mesh 922 connected to the metal wire 921; and a metal plate 923 connected to the metal mesh 922; and a nano-silver wire layer 93 disposed on the substrate 91, wherein the nano-silver wire layer 93 at least partially overlaps the metal layer 92. Wherein the metal layer 92 is disposed on the nano-silver layer 93.

The stacking structure 90 of the present embodiment includes: a trace area TA including the metal wire 921; a first lap joint region 95 comprising the metal mesh 922; a second lap joint region 96 including the metal plate 923; a visible area VA including an area adjacent to one side of the metal plate 923, the area being covered by the nano-silver wire layer 93 and not covered by the metal plate 923, wherein the nano-silver wire layer 93 has a pattern corresponding to the metal layer 92 in the routing area TA, the first overlapping area 95 and the second overlapping area 96.

Compared to embodiment 4, the touch sensor 90' of the present embodiment further includes a covering layer 97 disposed on the nano-silver wire layer 93.

As shown in fig. 20, an exemplary process of manufacturing the touch sensor 90' of the present embodiment includes:

providing a substrate 91;

disposing a metal layer 92 and a nano-silver wire layer 93 on the substrate 91, wherein the metal layer 92 is disposed on the nano-silver wire layer 93;

applying a flexographic printing technique to print an etch-resistant layer 94 on the surface of the metal layer 92 such that the etch-resistant layer 94 partially covers the metal layer 92, wherein the etch-resistant layer 94 comprises:

a conductive line pattern 941;

a mesh pattern 942 connected to the conductive line pattern 941; and

a covering region 943 covering the metal layer 92 and connected to the grid pattern 942;

using an etching technique to remove the portion of the metal layer 92 not covered by the etching-resistant layer 94 and the underlying nano-silver layer 93 with an etching solution, thereby making the metal layer 92 include:

a metal wire 921 corresponding to the wire pattern 941 of the etch resist layer 94;

a metal mesh 922 corresponding to the mesh pattern 942 of the etch resist layer 94 and connected to the metal wire 921; and

a metal plate 923 corresponding to the covered region 943 of the etch resist layer 94 and connected to the metal mesh 922;

removing the etch resist layer 94; and

a cap layer 97 is disposed over the metal layer 92.

Example 10

Fig. 21 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 10 of the present invention, and fig. 21 sequentially shows from top to bottom: 1. a schematic diagram of a silver nanowire layer 103 and a metal layer 102 disposed above a substrate 101, and a second silver nanowire layer 103 'and a second metal layer 102' disposed below the substrate 101; 2. after the etching-resistant layer 104 is printed on the surface of the metal layer 102 and the second etching-resistant layer 104 'is printed on the surface of the second metal layer 102'; 3. a schematic diagram of a part I after removing a part of the metal layer 102 not covered by the etching resist layer 104 and the underlying silver nanowire layer 103 with an etching solution and simultaneously removing a part of the second metal layer 102' not covered by the second etching resist layer 104' and the overlying silver nanowire layer 103 '; and 4. partial I after disposing the covering layer 107 on the metal layer 102 and disposing the second covering layer 107 'under the second metal layer 102'. Compared with embodiment 9, the touch sensor of the present embodiment has the stacked structure as described in embodiment 4 on both sides of the substrate.

The stacked structure 100 of the touch sensor 100' of the present embodiment includes: a substrate 101; a metal layer 102 disposed on the substrate 101, wherein the metal layer 102 comprises: a metal wire 1021; a metal mesh 1022 connected to the metal wire 1021; and a metal plate 1023 connected to the metal mesh 1022; and a nano-silver wire layer 103 disposed on the substrate 101, wherein the nano-silver wire layer 103 at least partially overlaps the metal layer 102. Wherein, the metal layer 102 is disposed on the nano-silver wire layer 103.

The stack structure 100 of the present embodiment includes: a trace area TA including the metal wire 1021; a first lap joint region 105 comprising the metal grid 1022; a second lap joint region 106 including the metal plate 1023; a visible area VA including an area adjacent to one side of the metal plate 1023, which is covered by the nano-silver wire layer 103 and not covered by the metal plate 1023, wherein the nano-silver wire layer 103 has a pattern corresponding to the metal layer 102 in the routing area TA, the first lap area 105 and the second lap area 106.

Compared to embodiment 4, the touch sensor 100' of the present embodiment further includes a covering layer 107 disposed on the nano-silver wire layer 103.

In comparison with the touch sensor 100' of embodiment 9, the present embodiment further includes: a second metal layer 102 'disposed below the substrate 101, wherein the second metal layer 102' comprises: a second metal wire 1021'; a second metal grid 1022 'connected to the second metal wire 1021'; and a second metal plate 1023 'connected with the second metal grid 1022'; a second layer 103' of nano-silver wires disposed under the substrate 101, wherein the second layer 103' of nano-silver wires at least partially overlaps the second metal layer 102 '. Wherein the second metal layer 102 'is disposed under the second nano-silver wire layer 103'; and a second capping layer 107 'disposed below the second metal layer 102'.

As shown in fig. 21, an exemplary process of manufacturing the touch sensor 100' of the present embodiment includes:

providing a substrate 101;

disposing a metal layer 102 and a nano-silver wire layer 103 above the substrate 101, wherein the metal layer 102 is disposed above the nano-silver wire layer 103, and disposing a second metal layer 102 'and a second nano-silver wire layer 103' below the substrate 101, wherein the second metal layer 102 'is disposed below the second nano-silver wire layer 103';

applying a flexographic printing technique to print an etching-resistant layer 104 on the surface of the metal layer 102, so that the etching-resistant layer 104 partially covers the metal layer 102, wherein the etching-resistant layer 104 comprises:

a conductive line pattern 1041;

a mesh pattern 1042 connected to the conductive line pattern 1041; and

a covering region 1043 covering the metal layer 102 and connected to the grid pattern 1042

Simultaneously printing a second etch resist layer 104' on the surface of the second metal layer 102' such that the second etch resist layer 104' partially covers the second metal layer 102', wherein the second etch resist layer 104' comprises:

the second conductive line pattern 1041';

a second mesh pattern 1042 'connected with the second conductive line pattern 1041'; and

a second cover region 1043' covering the second metal layer 102' and connected to the second mesh pattern 1042 ';

using an etching technique to remove the portion of the metal layer 102 not covered by the etching-resistant layer 104 and the underlying nano-silver wire layer 103 with an etching solution, thereby making the metal layer 102 include:

a metal wire 1021 corresponding to the wire pattern 1041 of the anti-etching layer 104;

a metal mesh 1022 corresponding to the mesh pattern 1042 of the etch resist layer 104 and connected to the metal wire 1021; and

a metal plate 1023 corresponding to the covering region 1043 of the etching resist layer 104 and connected with the metal grid 1022

Simultaneously, the etching solution is used to remove the portion of the second metal layer 102 'not covered by the second etching resistant layer 104' and the second silver nanowire layer 103 'above the second metal layer, thereby making the second metal layer 102' include:

a second metal wire 1021' corresponding to the second wire pattern 1041' of the second etch resist layer 104 ';

a second metal grid 1022 'corresponding to the second grid pattern 1042' of the second etch resist layer 104 'and connected to the second metal wire 1021'; and

a second metal plate 1023 'corresponding to the second coverage area 1043' of the second etching resist layer 104 'and connected to the second metal mesh 1022';

removing the etch-resistant layer 104 and the second etch-resistant layer 104'; and

a capping layer 107 is disposed on the nanowire layer 103 and the second nanowire layer 103'

A second cover layer 107' is provided thereunder.

In summary, the utility model discloses a fold structure and touch sensor have following excellent technological effect at least:

1. the utility model discloses a metal level that folds structure contains the metal net, makes the utility model discloses a fold structure and contain this touch-control inductor that folds structure have unique folding design in first overlap joint region. Compared with the traditional metal sheet, the metal grid can reduce the consumption of metal raw materials so as to reduce the manufacturing cost of the stacked structure and the touch sensor comprising the stacked structure, thereby realizing the touch sensor with an ultra-narrow frame (square).

It should be noted that the above-mentioned embodiments are only examples for the purpose of illustration, but not intended to limit the invention, and any person skilled in the art should make modifications and decorations without departing from the spirit of the invention.

Claims (21)

1. A laminated structure, comprising:

a substrate;

a metal layer disposed on the substrate, wherein the metal layer comprises:

a metal wire;

a metal mesh connected with the metal wire; and

a metal plate connected to the metal mesh; and

a layer of silver nanowires disposed on the substrate, wherein the layer of silver nanowires at least partially overlaps the metal layer.

2. The stacked structure of claim 1, wherein the layer of nanosilver is disposed above the metal layer.

3. The laminated structure of claim 1, further comprising:

a catalyst layer disposed below the metal layer.

4. The stacked structure of claim 1, wherein the metal layer is disposed above the layer of nanosilver.

5. The laminated structure of claim 1, wherein the laminated structure comprises: a routing area including the metal wire; a first overlap region comprising the metal mesh; a second lap joint region including the metal plate; and a visible region including a region adjacent to one side of the metal plate, the region being covered by the nano-silver wire layer and not covered by the metal plate, wherein the nano-silver wire layer has a pattern corresponding to the metal layer in the routing region, the first overlapping region and the second overlapping region.

6. The laminated structure of claim 5, wherein the total width of the first and second overlapping regions is less than 500 μm, and the ratio of the width of the first and second overlapping regions is between 0.05 and 20.

7. The laminated structure of claim 5, wherein the total width of the first and second overlapping regions is between 0.5mm and 1.0mm, and the ratio of the width of the first and second overlapping regions is between 0.03 and 35.

8. The laminated structure of claim 5, wherein the total width of the first and second overlapping regions is between 1.0mm and 1.5mm, and the ratio of the width of the first and second overlapping regions is between 0.02 and 50.

9. The laminated structure of claim 5, wherein the total width of the first and second overlapping regions is between 1.5mm and 2.5mm, and the ratio of the width of the first and second overlapping regions is between 0.01 and 100.

10. The stacking structure of claim 5, wherein a ratio of a total width of the first and second overlapping areas to a width of the trace area is 2:1, the metal layer comprises 1 to 50 metal wires, and a ratio of the widths of the first and second overlapping areas is between 0.05 to 20.

11. The stacking structure of claim 5, wherein a ratio of a total width of the first and second overlapping areas to a width of the trace area is 1:1, the metal layer comprises 10 to 100 metal wires, and a ratio of the widths of the first and second overlapping areas is between 0.03 and 35.

12. The stacking structure of claim 5, wherein a ratio of a total width of the first and second overlapping areas to a width of the trace area is 3:1, the metal layer comprises 1 to 50 metal wires, and a ratio of the widths of the first and second overlapping areas is between 0.02 to 50.

13. The stacked structure as claimed in claim 5, wherein the pitch of the metal mesh in the first landing area is 0.1-10 times the pitch of the metal wire, and the line width of the metal mesh in the first landing area is 0.1-5 times the line width of the metal wire.

14. The stacked structure as claimed in claim 5, wherein the metal wires have a pitch of 20 μm, a line width of 10 μm and a line pitch of 10 μm, and the metal mesh in the first landing area has a pitch of 2 μm to 200 μm and a line width of about 2 μm to 50 μm.

15. The stack structure of claim 14, wherein the metal grid in the first landing area has a line width/pitch of 5 μm/5 μm, 10 μm/5 μm, 15 μm/5 μm, 20 μm/5 μm, 40 μm/5 μm, 50 μm/150 μm, 40 μm/150 μm, 30 μm/150 μm, or 20 μm/150 μm.

16. The stacked structure as claimed in claim 5, wherein the metal wires have a pitch of 40 μm, a line width of 20 μm and a line pitch of 20 μm, and the metal mesh in the first landing area has a pitch of 4 μm to 400 μm and a line width of about 4 μm to 100 μm.

17. The stacked structure of claim 16, wherein the metal mesh in the first lap-joint region has a line width/line distance of 20 μm/5 μm, 40 μm/5 μm, 80 μm/5 μm, 100 μm/5 μm, 20 μm/80 μm, 40 μm/60 μm, 100 μm/200 μm, or 100 μm/300 μm.

18. The stacked structure as claimed in claim 5, wherein the metal conductive lines have a line width of 3 μm to 30 μm and a line pitch of 3 μm to 30 μm.

19. The laminated structure of claim 5, further comprising:

a bonding pad disposed on the substrate, comprising:

a bonding metal layer disposed on the substrate, wherein the bonding metal layer comprises:

bonding the metal grids; and

a bonding metal plate connected to the bonding metal mesh; and

and the bonding nano silver wire layer is arranged on the substrate.

20. A touch sensor, comprising:

the stacked structure according to any one of claims 1 to 19; and

a capping layer disposed over the metal layer or the layer of nanosilver lines in the stacked structure of any one of claims 1 to 19.

21. The touch sensor of claim 20, further comprising:

a second metal layer disposed below the substrate in the stacked structure according to any one of claims 1 to 19, wherein the second metal layer comprises:

a second metal wire;

a second metal mesh connected to the second metal wire; and

a second metal plate connected to the second metal mesh;

a second layer of silver nanowires disposed below the substrate, wherein at least a portion of the second layer of silver nanowires overlaps the second metal layer; and

and a second covering layer arranged below the second metal layer and the second nano silver wire layer.

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