CN114080114A - Preparation method of stacked structure, stacked structure and touch sensor - Google Patents

Abstract

The invention relates to a preparation method of a laminated structure, which comprises the following steps: providing a substrate; printing a catalyst layer on the substrate by using a flexographic printing technology, wherein the catalyst layer comprises a grid pattern and a lead pattern connected with the grid pattern; applying a chemical plating technology to chemically plate a metal layer on the catalyst layer, wherein the metal layer comprises a metal grid corresponding to the grid pattern of the catalyst layer and a metal lead corresponding to the lead pattern of the catalyst layer; and printing a nano silver line layer on the metal layer by applying a flexographic printing technology, wherein at least part of the nano silver line layer is overlapped with the metal grid. A stacked structure, comprising: a substrate; a catalyst layer; a metal layer; and a layer of nanosilver. The preparation method of the stacked structure and the stacked structure can be applied to a touch sensor.

Description

Preparation method of stacked structure, stacked structure and touch sensor

Technical Field

The present invention relates to a method for manufacturing a stacked structure, and more particularly, to a method for manufacturing a stacked structure using a flexographic printing technique. The present invention also relates to a stacked structure, and more particularly, to a stacked structure including a metal layer having a metal mesh. The present invention also relates to a touch sensor, and more particularly, to a touch sensor including the above stacked structure.

Background

The stacked structure including the silver nanowires and the metal layer can be applied to a touch sensor. In the fabrication method of the stacked structure in the prior art, the wiring area TA and the visible area VA are defined by a one-step etching process of developing with yellow light and matching with copper and nano silver. The prior art stacked structure formed by the above-mentioned fabrication method of stacked structure is shown in fig. 1, fig. 2 and fig. 3. Referring to fig. 1 and 2, a stack structure 10 of the prior art includes: a substrate 11; a metal layer 13 disposed on the substrate 11, wherein the metal layer 13 includes a metal sheet 131 and a metal wire 132; and a nano-silver wire layer 14 disposed on the metal layer 13. In addition, in another embodiment of the prior art stacking structure shown in fig. 3, the prior art stacking structure 10 further comprises: a catalyst layer 12 disposed between the substrate 11 and the metal layer 13. The prior art stacked structure comprises: a trace area TA including the metal wire 132; a first bonding region 15 including a region of the metal sheet 131 closer to the metal wire 132; a second bonding region 16 including a region of the metal sheet 131 farther from the metal wire 132; a visible area VA including an area adjacent to one side of the metal sheet 131, which is covered by the nano-silver wire layer 14 and not covered by the metal sheet 131.

In the stacked structure formed by the method for manufacturing a stacked structure in the prior art, the first bonding area 15 and the second bonding area 16 are both made of solid copper, and the manufacturing process is complicated and expensive. Therefore, there is a need for a novel stacked structure, a method for fabricating the stacked structure, and a touch sensor.

Disclosure of Invention

In order to solve the problems of complicated manufacturing process and high cost of the manufacturing method of the stacked structure in the prior art, the invention provides a novel manufacturing method of the stacked structure, the stacked structure and a touch sensor.

To achieve the above and other objects, the present invention provides a method for preparing a stacked structure, comprising:

providing a substrate;

printing a catalyst layer on the substrate by using a flexographic printing technology, wherein the catalyst layer comprises a grid pattern and a lead pattern connected with the grid pattern;

applying a chemical plating technology to chemically plate a metal layer on the catalyst layer, wherein the metal layer comprises a metal grid corresponding to the grid pattern of the catalyst layer and a metal lead corresponding to the lead pattern of the catalyst layer; and

and printing a nano silver line layer on the metal layer by using a flexible printing technology, wherein at least part of the nano silver line layer is overlapped with the metal grid.

In the above method, the catalyst layer may comprise catalytic metal wires, metal particles, metal ions and/or metal sheets.

In the above preparation method, the catalyst layer may comprise non-conductive materials such as acryl and/or epoxy resin, or may comprise other polymer materials such as: hydroxypropyl methylcellulose (HPMC), hydroxypropyl cellulose (HPC), methylcellulose (methylcellulose), ethylcellulose (ethyl cellulose), Xanthan gum (Xanthan gum), polyvinyl alcohol (polyvinyl alcohol), polyvinylpyrrolidone (PVP), carboxymethyl cellulose (carboxy methyl cellulose), and hydroxyethyl cellulose (hydroxyethyl cellulose), thereby constituting a conductive or non-conductive catalyst layer.

In the above method, the material of the metal layer may be selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy and silver-lead alloy.

In the above method, the material of the substrate may be selected from the group consisting of Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

In the above preparation method, the thickness of the layer of nano-silver wires may be greater than 0.3 μm.

In the above preparation method, the penetration (T%) of the overlapped portion of the nano silver wire layer and the metal mesh is less than 90%.

To achieve the above and other objects, the present invention also provides a stacked structure, comprising:

a substrate;

a catalyst layer disposed on the substrate, wherein the catalyst layer comprises a grid pattern and a wire pattern connected with the grid pattern;

a metal layer disposed on the catalyst layer, wherein the metal layer comprises a metal mesh disposed on the mesh pattern of the catalyst layer and a metal wire disposed on the wire pattern of the catalyst layer; and

and the nano silver wire layer is arranged on the metal layer, wherein the nano silver wire layer is at least partially overlapped with the metal grid.

In the above stacked structure, the catalyst layer comprises catalytic metal wires, metal particles, metal ions and/or metal sheets.

In the above stacked structure, the catalyst layer comprises acryl and/or epoxy resin.

In the above stacked structure, the metal layer is made of a material selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy and silver-lead alloy.

In the above stacked structure, the material of the substrate is selected from the group consisting of Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

In the stacked structure, the thickness of the layer of silver nanowires is greater than 0.3 μm.

In the stacked structure, the transmittance (T%) of the portion of the layer of silver nanowires overlapping the metal mesh is less than 90%.

The above stacked structure, wherein the stacked structure comprises: a routing area including the metal wire; a first overlap region comprising an area of the metal mesh not covered by the layer of nanosilver lines; a second lap joint area which comprises an opaque area covered by the nano silver wire layer in the metal grid and a transparent area which is adjacent to two opposite sides of the metal grid, covered by the nano silver wire layer and not covered by the metal grid; a visible area comprising an area adjacent to one side of the metal mesh that is covered by the layer of nanosilver and not covered by the metal mesh.

In the above stacked structure, in the second overlapping region, the ratio of the transparent region is smaller than the ratio of the opaque region, and the ratio of the transparent region in the overlapping portion is smaller than 50%.

In the above stacked structure, the total width of the first and second overlapping regions is less than 500 μm, and the ratio of the width of the first and second overlapping regions is between 0.1 and 10.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area is between 0.5mm and 1.0mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.05 and 20.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area is between 1.0mm and 1.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.03 and 30.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area is between 1.5mm and 2.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.02 and 50.

In the stacked structure, the pitch of the metal mesh in the first bonding region is 0.1 to 10 times the pitch of the metal wire.

In the stacked structure, the metal wires have a pitch of 20 μm, a line width of 10 μm and a line distance of 10 μm, and the metal grids in the first bonding regions have a pitch of 2 μm to 200 μm.

The above stacked structure, wherein the line width in the first overlapping region is between about 2 μm and 50 μm, and the line pitch is between about 2 μm and 10 μm.

The above stacked structure, wherein the line width/line distance of the metal mesh in the first overlapping region is 40 μm/10 μm, 30 μm/10 μm, 20 μm/10 μm or 10 μm/10 μm.

In the above stacked structure, the line width of the metal conductive line is between 3 μm and 30 μm, and the line pitch is between 3 μm and 30 μm.

The above stacked structure further comprises:

a bonding pad disposed on the substrate, comprising:

a bonding catalyst layer disposed on the substrate, wherein the bonding catalyst layer comprises a bonding grid pattern;

a bonding metal layer disposed on the bonding catalyst layer, wherein the bonding metal layer comprises a bonding metal mesh correspondingly disposed on the bonding mesh pattern of the bonding catalyst layer.

To achieve the above and other objects, the present invention also provides a touch sensor, comprising:

a stacked structure as described above; and

a capping layer disposed over the layer of nanosilver wires in the stacked structure as described above.

The touch sensor may further include:

a second catalyst layer disposed under the substrate in the stacked structure, wherein the second catalyst layer includes a second mesh pattern and a second conductive line pattern connected to the second mesh pattern;

a second metal layer disposed under the second catalyst layer, wherein the second metal layer includes a second metal mesh correspondingly disposed under the second mesh pattern of the second catalyst layer and a second metal wire correspondingly disposed under the second wire pattern of the second catalyst layer;

a second layer of silver nanowires disposed below the second metal layer, wherein the second layer of silver nanowires at least partially overlaps the second metal grid; and

and a second capping layer disposed below the second nano-silver line layer.

The preparation method of the stacked structure can simplify the manufacturing process of the stacked structure and reduce the preparation cost of the stacked structure and the touch sensor comprising the stacked structure.

The stacked structure and the touch sensor comprising the stacked structure can reduce consumption of metal raw materials so as to reduce preparation cost of the stacked structure and the touch sensor comprising the stacked structure.

Drawings

Fig. 1 is a schematic diagram of a prior art stacked structure.

Fig. 2 is a schematic cross-sectional view of a prior art stacked structure.

Fig. 3 is a schematic cross-sectional view of another embodiment of a prior art stacked structure.

Fig. 4 is a flow chart of a method of manufacturing a stacked structure of the present invention.

Fig. 5 is a schematic diagram of an exemplary flexographic printing technique.

Fig. 6 is a schematic view of a stacked structure according to embodiment 2 of the present invention.

Fig. 7 is a schematic cross-sectional view of a stacked structure according to embodiment 2 of the present invention.

Fig. 8 is a schematic view of the stacked structure of embodiment 3.

Fig. 9 is a schematic sectional view of the stacked structure of example 3 taken along the a-a section.

Fig. 10 is a schematic sectional view of the stacked structure of example 3 taken along the B-B section.

Fig. 11 is a schematic sectional view of the stacked structure of example 3 taken along the C-C section.

Fig. 12 is a schematic sectional view of the stacked structure of example 3 taken along the D-D section.

Fig. 13 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 4 of the invention.

Fig. 14 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 5 of the invention.

Description of reference numerals:

method for preparing 1-stacked structure

2 ink supply device

3 Anilox roll

4 scraper

5 printing plate cylinder

6 flexible plate

7 printed matter

10-fold structure

11 base material

12 catalyst layer

13 Metal layer

131 metal sheet

132 metal wire

14 nm silver wire layer

15 first overlap region

16 second overlap region

20-fold structure

21 base material

22 catalyst layer

221 grid pattern

222 pattern of conductive lines

23 Metal layer

231 metal mesh

232 metal conducting wire

24 nm silver wire layer

25 first overlap region

26 second overlap region

27 opaque region

28 light transmission region

30-fold structure

31 base material

32 catalyst layer

32' bonding catalyst layer

321 grid pattern

321' bonding grid pattern

322 pattern of conductive lines

33 metal layer

33' bonding metal layer

331 metal grid

331' bonded metal mesh

332 metal conductor

34 nanometer silver wire layer

35 first overlap region

36 second overlap region

37 opaque region

38 light transmitting region

39 bonding pad

40-fold structure

40' touch sensor

41 base material

42 catalyst layer

421 grid pattern

422 conductor pattern

43 Metal layer

431 metal grid

432 metal wire

44 nm silver wire layer

45 first overlap region

46 second overlap region

47 coating

50-fold structure

50' touch sensor

51 base material

52 catalyst layer

52' second catalyst layer

521 mesh pattern

521' second grid pattern

522 conductor pattern

522' second conductor pattern

53 metal layer

53' second metal layer

531 Metal grid

531' second metal grid

532 metal wire

532' second metal wire

54 nm silver wire layer

54' second silver nanowire layer

55 first overlap region

56 second overlap region

57 coating layer

57' second cover layer

Step S1

Step S2

Step S3

Step S4

TA routing area

VA visual area

Section A-A

Section B-B

C-C section

D-D section

Detailed Description

The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be apparent to those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and its several details are capable of modification and various changes in form and details can be made without departing from the spirit and scope of the present invention.

As used in the specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise.

As used in the specification and the appended claims, the term "or" includes "and/or" is used in its sense unless the context clearly dictates otherwise.

The "width" of the first and second overlapping regions as described herein refers to the width of the first and second overlapping regions in the a-a section as shown in fig. 8.

The "Pitch" as used herein refers to the shortest distance between the central axis of a metal wire and the central axis of another adjacent metal wire, or between the central axis of a metal wire in a metal mesh and the central axis of another adjacent metal wire.

The "line pitch" as used herein refers to the shortest distance between an edge of a metal wire and an edge of another adjacent metal wire, or the shortest distance between an edge of a metal line in a metal mesh and an edge of another adjacent metal line.

Example 1

Fig. 4 is a flowchart of a method for manufacturing a stacked structure according to example 1 of the present invention. As shown in fig. 4, a method 1 for preparing a stacked structure according to example 1 of the present invention includes: providing a substrate S1; printing a catalyst layer on the substrate by using a flexographic printing technology, wherein the catalyst layer comprises a grid pattern and a conducting wire pattern S2 connected with the grid pattern; applying a chemical plating technique to chemically plate a metal layer on the catalyst layer, wherein the metal layer comprises a metal grid corresponding to the grid pattern of the catalyst layer and a metal wire S3 corresponding to the wire pattern of the catalyst layer; and printing a layer of nano-silver lines on the metal layer using a flexographic printing technique, wherein the layer of nano-silver lines at least partially overlaps the metal grid S4.

The material of the substrate used in step S1 of the preparation method of the present embodiment is not particularly limited, and suitable materials include, but are not limited to, Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

In step S2 of the preparation method of the present embodiment, a conventional flexographic printing technique is applied to print the catalyst layer on the substrate. The composition of the catalyst layer is not particularly limited as long as the metal layer can be chemically plated on the catalyst layer by applying the chemical plating technique in the subsequent step S3. For example, the catalyst layer may include, but is not limited to, catalytic metal wires, metal particles, metal ions, and/or metal platelets. In addition, the catalyst layer may include, but is not limited to, acryl and/or epoxy.

In step S3 of the preparation method of the present embodiment, a conventional electroless plating technique is applied to chemically plate a metal layer on the catalyst layer. The composition of the metal layer is not particularly limited as long as appropriate conductivity can be provided. For example, the material of the metal layer may be copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy, and/or silver-lead alloy, but the present invention is not limited thereto.

In step S4 of the manufacturing method of this embodiment, a conventional flexographic printing technique is applied to print a silver nanowire layer on the metal layer. The thickness of the layer of nanosilver is not particularly limited as long as it provides appropriate conductivity. For example, the layer of nanosilver may be greater than 0.3 μm thick.

The catalyst layer printed in step S2 of the preparation method of the present embodiment includes a mesh pattern and a conductive line pattern connected to the mesh pattern, so that the metal layer plated in the subsequent step S3 includes a metal mesh corresponding to the mesh pattern of the catalyst layer and a metal conductive line corresponding to the conductive line pattern of the catalyst layer, and the silver nanowire layer printed in step S4 at least partially overlaps the metal mesh. By the above technical means, the stacked structure manufactured by the manufacturing method of the present embodiment may have the structure described in the following embodiment 2, so that it can be applied to a touch sensor.

In a preferred embodiment, the transmittance (T%) of the overlapped portion of the layer of silver nanowires and the metal mesh in the stacked structure prepared by the preparation method of this embodiment is less than 90%.

Fig. 5 exemplarily illustrates the flexographic printing technique applied in step S2 and step S4 of the manufacturing method of the present embodiment, but the present invention is not limited thereto. As shown in fig. 5, an exemplary flexographic printing technique applies an ink supply 2 to drop ink onto an Anilox roller 3, and then scrapes off excess ink on the Anilox roller 3 by a doctor blade 4. Next, the ink on the anilox roller 3 is transferred onto a flexographic Plate 6 on a Plate cylinder 5. Finally, the ink on the flexible plate 6 is transferred to the printed matter 7 to print a desired pattern on the printed matter 7.

Example 2

Fig. 6 and 7 are schematic views of the stacked structure according to embodiment 2 of the present invention. As shown in fig. 6 and 7, the stacked structure 20 of the present embodiment includes: a substrate 21 (not shown in fig. 6); a catalyst layer 22 (not shown in fig. 6) disposed on the substrate 21, wherein the catalyst layer 22 includes a mesh pattern 221 and a conductive line pattern 222 connected to the mesh pattern; a metal layer 23 disposed on the catalyst layer 22, wherein the metal layer 23 includes a metal mesh 231 disposed on the mesh pattern 221 of the catalyst layer 22 and a metal wire 232 disposed on the wire pattern 222 of the catalyst layer 22; and a layer of nano-silver wires 24 disposed on the metal layer 23, wherein the layer of nano-silver wires 24 at least partially overlaps the metal mesh 231.

The stack structure 20 of the present embodiment includes: a trace area TA including the metal wire 232; a first lap joint region 25 comprising an area of the metal mesh 231 not covered by the layer 24 of silver nanowires; a second lap joint region 26 including an opaque region 27 of the metal mesh 231 covered by the nano-silver wire layer 24 and a transparent region 28 adjacent to opposite sides of the metal mesh 231 covered by the nano-silver wire layer 24 and not covered by the metal mesh 231; a visible area VA including an area adjacent to one side of the metal mesh 231, which is covered by the nano-silver wire layer 24 and not covered by the metal mesh 231.

The material of the substrate in the stacked structure of the present embodiment is not particularly limited, and suitable materials include, but are not limited to, Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

The composition of the catalyst layer in the stacked structure of the present embodiment is not particularly limited as long as it is suitable for electroless plating of a metal layer on the catalyst layer. For example, the catalyst layer may include, but is not limited to, catalytic metal wires, metal particles, metal ions, and/or metal platelets. In addition, the catalyst layer may include, but is not limited to, acryl and/or epoxy.

The composition of the metal layer in the stacked structure of the present embodiment is not particularly limited as long as it provides appropriate conductivity. For example, the material of the metal layer may be copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy, and/or silver-lead alloy, but the present invention is not limited thereto.

The thickness of the layer of silver nanowires in the stacked structure of the present embodiment is not particularly limited as long as it provides appropriate conductivity. For example, the layer of nanosilver may be greater than 0.3 μm thick.

In a preferred embodiment, the transmittance (T%) of the portion of the silver nanowire layer overlapping the metal mesh in the stacked structure of the embodiment is less than 90%.

In a preferred embodiment, in the stacked structure of the present embodiment, in the second overlapping region, the ratio of the transparent region is smaller than the ratio of the opaque region, and the ratio of the transparent region in the overlapping portion is smaller than 50%.

In a preferred embodiment, the total width of the first overlapping region and the second overlapping region in the stacked structure of the present embodiment is less than 500 μm, and the ratio of the width of the first overlapping region to the width of the second overlapping region is between 0.1 and 10.

In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of the present embodiment is between 0.5mm and 1.0mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.05 and 20.

In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of the present embodiment is between 1.0mm and 1.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.03 and 30.

In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of the present embodiment is between 1.5mm and 2.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.02 and 50.

In a preferred embodiment, the pitch of the metal grid in the first bonding region in the stacked structure of the present embodiment is 0.1 to 10 times the pitch of the metal wire.

In a preferred embodiment, the pitch of the metal wires in the stacked structure of the present embodiment is 20 μm, the line width is 10 μm, and the line distance is 10 μm, and the pitch of the metal mesh in the first landing area is between 2 μm and 200 μm.

In a preferred embodiment, the line width in the first overlapping region is between about 2 μm and 50 μm, and the line pitch is between about 2 μm and 10 μm.

In a preferred embodiment, the line width/line distance of the metal grid in the first overlapping region is 40 μm/10 μm, 30 μm/10 μm, 20 μm/10 μm or 10 μm/10 μm.

In a preferred embodiment, the line width of the metal conductive line in the stacked structure of the present embodiment is between 3 μm and 30 μm and the line pitch is between 3 μm and 30 μm.

For example, the stacked structure of the present embodiment can be prepared by the preparation method described in example 1, but the present invention is not limited thereto.

Example 3

Fig. 8, 9, 10, 11 and 12 are schematic views of a stacked structure according to embodiment 3 of the present invention. As shown in fig. 8, 9, 10, 11, and 12, the stacked structure 30 of the present embodiment includes: a substrate 31 (not shown in fig. 8); a catalyst layer 32 (not shown in fig. 8) disposed on the substrate 31, wherein the catalyst layer 32 includes a mesh pattern 321 and a conductive wire pattern 322 connected to the mesh pattern; a metal layer 33 disposed on the catalyst layer 32, wherein the metal layer 33 includes a metal mesh 331 disposed on the mesh pattern 321 of the catalyst layer 32 and a metal wire 332 disposed on the wire pattern 322 of the catalyst layer 32; and a layer of nanosilver 34 disposed over the metal layer 33, wherein the layer of nanosilver 34 at least partially overlaps the metal mesh 331.

The stacking structure 30 of the present embodiment includes: a trace area TA including the metal wire 332; a first lap region 35 comprising the area of the metal mesh 331 not covered by the layer 34 of nanosilver; a second lap joint region 36 comprising an opaque region 37 of the metal mesh 331 covered by the layer 34 of silver nanowires and transparent regions 38 adjacent to opposite sides of the metal mesh 331 covered by the layer 34 of silver nanowires and not covered by the metal mesh 331; a visible area VA comprising an area adjacent to one side of the metal mesh 331 covered by the layer 34 of silver nanowires and not covered by the metal mesh 331.

Compared to embodiment 2, the stacked structure 30 of the present embodiment further includes: a bonding pad 39 disposed on the substrate 31, comprising: a bonding catalyst layer 32' disposed on the substrate 31, wherein the bonding catalyst layer 32' includes a bonding mesh pattern 321 '; a bonding metal layer 33 'disposed on the bonding catalyst layer 32', wherein the bonding metal layer 33 'includes a bonding metal mesh 331' disposed on the bonding mesh pattern 321 'of the bonding catalyst layer 32'.

The bonding pad of the present embodiment can be used as a contact for connecting with an external circuit.

For example, the stacked structure of the present embodiment can be prepared by the preparation method described in example 1, but the present invention is not limited thereto. In this case, the catalyst layer and the bonding catalyst layer in the stacked structure of the present embodiment can be printed simultaneously in a single flexographic printing step to further plate the metal layer and the bonding metal layer in the stacked structure of the present embodiment simultaneously in a single electroless plating step.

Example 4

Fig. 13 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 4 of the invention. As shown in fig. 13, the touch sensor 40' of the present embodiment has the stacking structure 40 as described in embodiment 2.

The stacked structure 40 of the touch sensor 40' of the present embodiment includes: a substrate 41; a catalyst layer 42 disposed on the substrate 41, wherein the catalyst layer 42 includes a mesh pattern 421 and a conductive wire pattern 422 connected to the mesh pattern; a metal layer 43 disposed on the catalyst layer 42, wherein the metal layer 43 includes a metal mesh 431 disposed on the mesh pattern 421 of the catalyst layer 42 and a metal wire 432 disposed on the wire pattern 422 of the catalyst layer 42; and a layer of nanosilver 44 disposed on the metal layer 43, wherein the layer of nanosilver 44 at least partially overlaps the metal mesh 431.

The stacked structure 40 in the touch sensor 40' of the present embodiment includes: a trace area TA including the metal wire 432; a first lap region 45 comprising an area of the metal mesh 431 not covered by the layer 44 of silver nanowires; a second lap joint region 46 including an opaque region of the metal mesh 431 covered by the nano-silver wire layer 44 and a transparent region adjacent to opposite sides of the metal mesh 431 covered by the nano-silver wire layer 44 and not covered by the metal mesh 431; a visible area VA including an area adjacent to one side of the metal mesh 431, which is covered by the nano-silver wire layer 44 and not covered by the metal mesh 431.

Compared to embodiment 2, the touch sensor 40' of the present embodiment further includes a covering layer 47 disposed on the nano-silver wire layer 44.

As shown in fig. 13, an exemplary process for manufacturing the touch sensor 40' of the present embodiment includes providing a substrate 41; printing a catalyst layer 42 on the substrate 41 by applying a flexographic printing technique, wherein the catalyst layer 42 comprises a grid pattern 421 and a conductive line pattern 422 connected to the grid pattern 421; applying an electroless plating technique to chemically plate a metal layer 43 on the catalyst layer 42, wherein the metal layer 43 comprises a metal mesh 431 corresponding to the mesh pattern 421 of the catalyst layer 42 and a metal wire 432 corresponding to the wire pattern 422 of the catalyst layer; printing a layer 44 of nanosilver on top of the metal layer 43 using a flexographic printing technique, wherein the layer 44 of nanosilver at least partially overlaps the metal grid 43; and a capping layer 47 is disposed on the nano-silver wire layer 44.

Example 5

Fig. 14 is a schematic view of a touch sensor and a manufacturing process thereof according to embodiment 5 of the invention. As shown in fig. 14, the touch sensor 50' of the present embodiment has the stacked structure 50 as described in embodiment 2.

The stacked structure 50 of the touch sensor 50' of the present embodiment includes: a base material 51; a catalyst layer 52 disposed on the substrate 51, wherein the catalyst layer 52 includes a mesh pattern 521 and a conductive wire pattern 522 connected to the mesh pattern; a metal layer 53 disposed on the catalyst layer 52, wherein the metal layer 53 includes a metal mesh 531 disposed on the mesh pattern 521 of the catalyst layer 52 and a metal wire 532 disposed on the wire pattern 522 of the catalyst layer 52; and a layer of nanosilver 54 disposed over the metal layer 53, wherein the layer of nanosilver 54 at least partially overlaps the metal mesh 531.

The stacked structure 50 of the touch sensor 50' of the present embodiment includes: a trace area TA including the metal wires 532; a first lap region 55 comprising an area of the metal mesh 531 not covered by the layer 54 of silver nanowires; a second lap joint region 56 comprising an opaque region of the metal mesh 531 covered by the layer 54 of silver nanowires and a transparent region adjacent to opposite sides of the metal mesh 531 covered by the layer 54 of silver nanowires and not covered by the metal mesh 531; a visible area VA including an area adjacent to one side of the metal mesh 531 covered by the nano-silver wire layer 54 and not covered by the metal mesh 531.

Compared to embodiment 2, the touch sensor 50' of the present embodiment further includes a covering layer 57 disposed on the nano-silver wire layer 54.

Compared to embodiment 4, the touch sensor 50' of the present embodiment further includes: a second catalyst layer 52' disposed under the substrate 51, wherein the second catalyst layer 52 includes a second mesh pattern 521' and a second conductive line pattern 522' connected to the second mesh pattern; a second metal layer 53' disposed under the second catalyst layer 52', wherein the second metal layer 53' includes a second metal mesh 531' disposed under the second mesh pattern 521' of the second catalyst layer 52' and a second metal wire 532' disposed under the second wire pattern 522' of the second catalyst layer 52 '; a second layer 54 'of nanosilver disposed below the second metal layer 53', wherein the second layer 54 'of nanosilver at least partially overlaps the second metal grid 531'; and a second capping layer 57 'disposed under the second nano-silver wire layer 54'.

As shown in fig. 14, an exemplary process for manufacturing the touch sensor 50' of the present embodiment includes providing a substrate 51; simultaneously printing a catalyst layer 52 and a second catalyst layer 52' on both sides of the substrate 51 by applying a flexographic printing technique, wherein the catalyst layer 52 comprises a mesh pattern 521 and a conductive line pattern 522 connected with the mesh pattern 521, and the second catalyst layer 52' comprises a second mesh pattern 521' and a second conductive line pattern 522' connected with the second mesh pattern 521 '; applying an electroless plating technique, simultaneously electroless plating the metal layer 53 on the catalyst layer 52, and electroless plating the second metal layer 53 'under the second catalyst layer 52', wherein the metal layer 53 comprises a metal mesh 531 corresponding to the mesh pattern 521 of the catalyst layer 52 and a metal wire 532 corresponding to the wire pattern 522 of the catalyst layer, and the second metal layer 53 'comprises a second metal mesh 531' corresponding to the second mesh pattern 521 'of the second catalyst layer 52' and a second metal wire 532 'corresponding to the second wire pattern 522' of the second catalyst layer; applying a flexographic printing technique while printing a layer of nanosilver 54 on top of the metal layer 53 and a second layer of nanosilver 54 'under the second metal layer 53', wherein the layer of nanosilver 54 at least partially overlaps the metal grid 53 and the second layer of nanosilver 54 'at least partially overlaps the second metal grid 53'; and a capping layer 57 is disposed on the silver nanowire layer 54, and a second capping layer 57 'is disposed under the second silver nanowire layer 54'.

In summary, the preparation method of the stacked structure, the stacked structure and the touch sensor of the invention have at least the following excellent technical effects:

1. the preparation method of the laminated structure of the invention applies the flexography technology to print the catalyst layer, further applies the chemical plating technology to plate the metal layer, and then applies the flexography technology to print the nano-silver layer, thereby completely avoiding the traditional complicated and expensive yellow light etching process. Therefore, the preparation method of the stacked structure can simplify the manufacturing process of the stacked structure and reduce the preparation cost of the stacked structure. The preparation method of the stacked structure can be applied to the manufacturing process of the touch sensor, so that the preparation cost of the touch sensor comprising the stacked structure is reduced.

2. The metal layer of the stacked structure comprises the metal mesh, so that the stacked structure and the touch sensor comprising the stacked structure have unique stacked design in the first lap joint area and the second lap joint area. Compared with the traditional metal sheet, the metal grid can reduce the consumption of metal raw materials so as to reduce the manufacturing cost of the stacked structure and the touch sensor comprising the stacked structure, thereby realizing the touch sensor with an ultra-narrow frame (square).

It should be noted that the above-mentioned embodiments are merely for illustrative purposes and are not intended to limit the invention, and those skilled in the art will recognize that many changes and modifications may be made without departing from the spirit of the invention.

Claims (26)

1. A method for preparing a stacked structure, comprising:

providing a substrate;

printing a catalyst layer on the substrate by using a flexographic printing technology, wherein the catalyst layer comprises a grid pattern and a lead pattern connected with the grid pattern;

applying a chemical plating technology to chemically plate a metal layer on the catalyst layer, wherein the metal layer comprises a metal grid corresponding to the grid pattern of the catalyst layer and a metal lead corresponding to the lead pattern of the catalyst layer; and

and printing a nano silver line layer on the metal layer by using a flexible printing technology, wherein at least part of the nano silver line layer is overlapped with the metal grid.

2. The method of claim 1, wherein the catalyst layer comprises catalytic metal wires, metal particles, metal ions and/or metal flakes.

3. The method of claim 1, wherein the catalyst layer comprises acryl and/or epoxy.

4. The method of claim 1, wherein the metal layer is made of a material selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy, and silver-lead alloy.

5. The method of claim 1, wherein the substrate is made of a material selected from the group consisting of polyethylene terephthalate, cyclic olefin copolymer, colorless polyimide, polyethylene naphthalate, polycarbonate, and polyethersulfone.

6. The method of claim 1, wherein the layer of nanosilver is greater than 0.3 μm thick.

7. A laminated structure, comprising:

a substrate;

a catalyst layer disposed on the substrate, wherein the catalyst layer comprises a grid pattern and a wire pattern connected with the grid pattern;

a metal layer disposed on the catalyst layer, wherein the metal layer comprises a metal mesh disposed on the mesh pattern of the catalyst layer and a metal wire disposed on the wire pattern of the catalyst layer; and

and the nano silver wire layer is arranged on the metal layer, wherein the nano silver wire layer is at least partially overlapped with the metal grid.

8. The laminated structure of claim 7, wherein the catalyst layer comprises catalytic metal wires, metal particles, metal ions and/or metal platelets.

9. The laminated structure of claim 7, wherein the catalyst layer comprises acryl and/or epoxy.

10. The laminated structure of claim 7, wherein the metal layer is made of a material selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy, and silver-lead alloy.

11. The laminated structure of claim 7, wherein the substrate is selected from the group consisting of polyethylene terephthalate, cyclic olefin copolymer, colorless polyimide, polyethylene naphthalate, polycarbonate, and polyethersulfone.

12. The stacked structure of claim 7, wherein the layer of nanosilver is greater than 0.3 μm thick.

13. The laminated structure of claim 7, wherein the laminated structure comprises: a routing area including the metal wire; a first overlap region comprising an area of the metal mesh not covered by the layer of nanosilver lines; a second lap joint area which comprises an opaque area covered by the nano silver wire layer in the metal grid and a transparent area which is adjacent to two opposite sides of the metal grid, covered by the nano silver wire layer and not covered by the metal grid; a visible area comprising an area adjacent to one side of the metal mesh that is covered by the layer of nanosilver and not covered by the metal mesh.

14. The stacked structure as claimed in claim 13, wherein the ratio of the transparent region to the opaque region in the second overlapping region is less than 50%, and the ratio of the transparent region to the overlapping portion is less than 50%.

15. The stacked structure as claimed in claim 13, wherein the total width of the first and second overlapping regions is less than 500 μm, and the ratio of the width of the first and second overlapping regions is between 0.1 and 10.

16. The laminated structure of claim 13, wherein the total width of the first and second overlapping regions is between 0.5mm and 1.0mm, and the ratio of the width of the first and second overlapping regions is between 0.05 and 20.

17. The laminated structure of claim 13, wherein the total width of the first and second overlapping regions is between 1.0mm and 1.5mm, and the ratio of the width of the first and second overlapping regions is between 0.03 and 30.

18. The laminated structure of claim 13, wherein the total width of the first and second overlapping regions is between 1.5mm and 2.5mm, and the ratio of the width of the first and second overlapping regions is between 0.02 and 50.

19. The stacked structure as claimed in claim 13, wherein the pitch of the metal mesh in the first landing area is 0.1 to 10 times the pitch of the metal wire.

20. The stacked structure of claim 13, wherein the metal wires have a pitch of 20 μm, a line width of 10 μm and a line pitch of 10 μm, and the metal mesh in the first landing area has a pitch of 2 μm to 200 μm.

21. The stacked structure of claim 20, wherein the metal mesh in the first strap region has a line width of about 2 μm to about 50 μm and a line pitch of about 2 μm to about 10 μm.

22. The stacked structure of claim 21, wherein the metal mesh in the first lap-joint region has a line width/line distance of 40 μm/10 μm, 30 μm/10 μm, 20 μm/10 μm, or 10 μm/10 μm.

23. The stacked structure as claimed in claim 13, wherein the metal lines have a line width of 3 μm to 30 μm and a line pitch of 3 μm to 30 μm.

24. The laminated structure of claim 13, further comprising:

a bonding pad disposed on the substrate, comprising:

a bonding catalyst layer disposed on the substrate, wherein the bonding catalyst layer comprises a bonding grid pattern;

a bonding metal layer disposed on the bonding catalyst layer, wherein the bonding metal layer comprises a bonding metal mesh correspondingly disposed on the bonding mesh pattern of the bonding catalyst layer.

25. A touch sensor, comprising:

the stacked structure according to any one of claims 7 to 24; and

a capping layer disposed over the layer of nanosilver wires in the stacked structure of any one of claims 7 to 24.

26. The touch sensor of claim 25, further comprising:

a second catalyst layer disposed under the substrate in the stacked structure according to any one of claims 7 to 24, wherein the second catalyst layer comprises a second mesh pattern and a second conductive line pattern connected to the second mesh pattern;

a second metal layer disposed under the second catalyst layer, wherein the second metal layer includes a second metal mesh correspondingly disposed under the second mesh pattern of the second catalyst layer and a second metal wire correspondingly disposed under the second wire pattern of the second catalyst layer;

a second layer of silver nanowires disposed below the second metal layer, wherein the second layer of silver nanowires at least partially overlaps the second metal grid; and

and a second capping layer disposed below the second nano-silver line layer.

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