CN212316243U - Auxiliary heater of semiconductor processing equipment - Google Patents

Abstract

The utility model discloses an auxiliary heater of semiconductor processing equipment, which comprises an insulating shell, an insulating support tube (120) and an oxidation resistance wire (130); wherein: the periphery of insulating stay tube (120) is twined at least in part to antioxidant resistance wire (130), and forms the heating zone on insulating stay tube (120), and insulating casing has accommodation space, and heating zone and insulating stay tube (120) all set up in accommodation space, and the both ends of antioxidant resistance wire (130) extend outside accommodation space. The problem that service life of the auxiliary heater is short and the fault rate is high can be solved to above-mentioned scheme.

Description

Auxiliary heater of semiconductor processing equipment

Technical Field

The utility model relates to a semiconductor manufacturing technical field especially relates to an auxiliary heater of semiconductor processing equipment.

Background

The photovoltaic power generation system is a novel power generation system which directly converts solar radiation energy into electric energy by utilizing the photovoltaic effect of a solar cell semiconductor material. Solar cells, also known as photovoltaic cells, are the core devices in photovoltaic power generation systems. Currently, the most mature and commercially valuable solar cell with the widest market applications is the crystalline silicon solar cell. The reflection loss rate of sunlight on the surface of the crystal silicon is as high as about 35%, and the final conversion efficiency of the solar cell is seriously influenced. In order to improve the conversion efficiency, i.e. reduce the reflection of sunlight from the surface of crystalline silicon and increase the refractive index of sunlight, one or more layers of silicon dioxide or silicon oxynitride or silicon nitride antireflection films are often deposited on the surface of crystalline silicon. The antireflection film not only can reduce the emission of sunlight on the surface of crystalline silicon, but also can play a role in passivating and protecting the surface of the crystalline silicon. Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment adopts a Plasma Enhanced Chemical Vapor Deposition technology, makes reaction gas generate glow discharge by using a radio frequency electric field under the condition of low pressure, ionizes the Plasma, and promotes the generation of reactive groups, so that silane and ammonia gas can react at a lower temperature (200-450 ℃), the complexity of the process is reduced, the service life of a crystalline silicon solar cell is effectively prevented from being attenuated, and the method is widely applied to evaporation of an antireflection film on the surface of the crystalline silicon solar cell.

At present, an auxiliary heater of a PECVD apparatus is a tungsten filament lamp tube structure, as shown in fig. 1, a tungsten filament 10 is easily oxidized at a high temperature, so that a quartz lamp tube 20 needs to be vacuumized or vacuum-packaged, which results in a complicated preparation process of the auxiliary heater, and meanwhile, the auxiliary heater of such a structure has a high failure rate, needs to be frequently replaced and maintained, which results in a limitation in increasing the productivity of the PECVD apparatus.

SUMMERY OF THE UTILITY MODEL

The utility model discloses an auxiliary heater of semiconductor processing equipment can solve the shorter and higher problem of fault rate of auxiliary heater life.

In order to solve the above problem, the utility model adopts the following technical scheme:

the embodiment of the utility model discloses an auxiliary heater of semiconductor processing equipment, which comprises an insulating shell, an insulating support tube and an antioxidant resistance wire; wherein:

the anti-oxidation resistance wire is at least partially wound on the periphery of the insulation supporting tube, a heating area is formed on the insulation supporting tube, the insulation shell is provided with an accommodating space, the heating area and the insulation supporting tube are arranged in the accommodating space, and two ends of the anti-oxidation resistance wire extend out of the accommodating space.

The utility model discloses a technical scheme can reach following beneficial effect:

the embodiment of the utility model discloses among the auxiliary heater, use the oxidation resistance wire to replace the tungsten filament, the difficult oxidation of oxidation resistance wire under the condition of high temperature to make the life of oxidation resistance wire longer, and need not to insulating housing evacuation, simplify auxiliary heater's preparation process, simultaneously, insulating housing need not special treatment (for example coating light reflection layer), thereby makes auxiliary heater's cost lower. The auxiliary heater adopts high-temperature stable parts, so that the auxiliary heater is difficult to damage under the high-temperature condition, the fault rate of the auxiliary heater is reduced, the stability of the auxiliary heater is improved, the service time of the auxiliary heater is prolonged, frequent replacement and maintenance of the auxiliary heater are avoided, the maintenance time is shortened, and the productivity of semiconductor processing equipment can be further improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments or the background art of the present invention, the drawings required to be used in the embodiments or the background art will be briefly described below, and it is obvious for those skilled in the art to obtain other drawings without inventive labor.

FIG. 1 is a schematic diagram of a portion of a typical auxiliary heater in the prior art;

fig. 2 is a schematic structural diagram of an auxiliary heater disclosed in an embodiment of the present invention;

fig. 3 is a schematic partial structural view of an auxiliary heater disclosed in an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention.

Description of reference numerals:

10-tungsten filament, 20-quartz lamp tube;

100-auxiliary heater, 110-insulating sleeve, 120-insulating support tube, 130-antioxidant resistance wire, 140-insulating end socket and 150-thermocouple;

200-a main heating part;

300-a wafer carrier;

400-quartz tube.

Detailed Description

To make the purpose, technical solution and advantages of the present invention clearer, the following will combine the embodiments of the present invention and the corresponding drawings to clearly and completely describe the technical solution of the present invention. It is to be understood that the embodiments described are only some embodiments of the invention, and not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

Referring to fig. 2 to 4, an auxiliary heater 100 of a semiconductor processing apparatus is disclosed in an embodiment of the present invention, and the disclosed auxiliary heater 100 includes an insulating housing, an insulating support tube 120, and an oxidation resistance wire 130.

The antioxidant resistance wire 130 is at least partially wound around the periphery of the insulating support tube 120, and the antioxidant resistance wire 130 forms a heating zone on the insulating support tube 120, specifically, at least a portion of the antioxidant resistance wire 130 can be spirally wound around the insulating support tube 120, so that the antioxidant resistance wire 130 forms a spiral heating zone. In specific preparation process, can fire oxidation resistance wire 130 earlier for the heliciform, then install spiral heliciform oxidation resistance wire 130 in insulating support tube 120, of course, also can be earlier with oxidation resistance wire 130 spiral winding to insulating support tube 120 on, then burn to for the heliciform, the embodiment of the utility model provides an in the embodiment of the utility model provides an anti oxidation resistance wire 130 the winding mode and the winding process do not do the restriction.

The resistance wire 130 can generate a large amount of heat when the power is turned on, so that the auxiliary heater 100 can heat the wafer carrier 300 well and at a high heating speed. Insulating stay tube 120 plays the effect of bearing oxidation resistance wire 130, and can prevent the short circuit between arbitrary adjacent two heating sub-circles in the zone of heating to avoid the relatively poor problem of effect of generating heat to appear in the zone of heating, and then improve the stability in the zone of heating. The wafer carrier 300 is typically a graphite boat, and the structure of the wafer carrier 300 is well known in the art and will not be described herein for brevity.

In order to further improve the stability of the heating zone, the heating zone may include a plurality of consecutive spiral turns, and the distance between any two adjacent spiral turns and the diameter of the antioxidant resistance wire 130 may satisfy that P is greater than or equal to 1.5d, wherein: p is the distance between two adjacent spiral sub-circles, d is the diameter of oxidation resistance wire 130, so that the distance between two arbitrary adjacent spiral sub-circles in the zone of heating is great, prevent the phenomenon that short circuit or strike sparks and puncture from appearing between two arbitrary adjacent spiral sub-circles, further improve the stability in the zone of heating, the life of extension oxidation resistance wire 130, thereby reduce auxiliary heater 100's fault rate, and then improve auxiliary heater 100's stability, avoid often changing and maintaining this auxiliary heater 100, reduce maintenance duration, finally can improve semiconductor processing equipment's productivity.

Further, P may be greater than or equal to 1.5d, and P may be less than or equal to 2.5d, so that the spiral sub-loops of the heating region are relatively dense, the heating value of the heating region is increased, so that the auxiliary heater 100 can generate more heat, and thus the auxiliary heater 100 has a better heating effect on the wafer carrier 300, and the heating speed is faster.

The antioxidant resistance wire 130 may deform at high temperature, which causes contraction of the heating area, so that the distance between each spiral coil in the heating area decreases, and further causes short circuit or spark breakdown between two adjacent spiral coils in the heating area. In this regard, in an alternative embodiment, the heating zone may comprise a plurality of helical turns as described above, the helical turns being connected in series, with a refractory section being provided between any two adjacent helical turns. The refractory material part can prevent short circuit or spark breakdown between any two adjacent spiral sub-rings, so that the stability of a heating area is further improved, the service life of the antioxidant resistance wire 130 is prolonged, the fault rate of the auxiliary heater 100 is reduced, the stability of the auxiliary heater 100 is further improved, frequent replacement and maintenance of the auxiliary heater 100 are avoided, the maintenance time is shortened, and the productivity of semiconductor processing equipment can be further improved.

Meanwhile, the spiral coil can be clamped by the refractory material portion, the shrinkage of the heating area is limited, and therefore the shrinkage of the heating area caused by high-temperature deformation of the antioxidant resistance wire 130 can be prevented, the distance between each spiral coil in the heating area can be kept stable, and the phenomenon that short circuit or fire breakdown occurs between two adjacent spiral coils is avoided. The refractory section is required to satisfy the insulation requirement.

The refractory material portion may be of various kinds, for example, silica, calcium oxide, ceramics, and the like. Alternatively, the refractory section may be a high purity alumina fiber section. The high-purity alumina fiber part has the advantages of high melting point, good thermal stability, high hardness, good wear resistance, high mechanical strength, good electrical insulation, corrosion resistance and the like. Specifically, the high-purity alumina fiber part can be filled between any two adjacent spiral sub-rings through a vacuum wet forming technology, and the process method is simple to operate and good in effect, so that the refractory material part is formed well. The embodiment of the utility model provides an in order not to make the restriction of setting up the type of refractory material portion.

The refractory material part filled between any two adjacent spiral sub-coils can wrap 1/2 or 2/3 of the spiral sub-coils, that is, 1/2 part or 2/3 part of the spiral sub-coils close to the insulation support tube 120 is embedded in the refractory material part, so that the refractory material part has a good limiting effect on the two adjacent spiral sub-coils, and the heating area shrinkage is further limited.

In the embodiment of the present invention, the kind of the oxidation resistance wire 130 may be various, for example, a nickel-chromium resistance heating wire and an iron-chromium-aluminum resistance heating wire, etc., and the embodiment of the present invention does not limit the kind of the oxidation resistance wire 130. However, since the nichrome resistance heater wire is made of a rare nickel metal material, the price of the nichrome resistance heater wire is higher than that of the iron-chromium-aluminum resistance heater wire, which results in higher cost of the auxiliary heater 100. Therefore, in the embodiment of the present invention, the resistance wire 130 can be an iron-chromium-aluminum resistance heating wire, because the iron-chromium-aluminum resistance heating wire has the advantages of high use temperature, the highest use temperature of 1400 degrees centigrade, long service life, high surface load, good oxidation resistance, high resistivity, and low price. Meanwhile, the heating resistance wires adopted by the main heating part 200 of the semiconductor processing equipment are iron-chromium-aluminum resistance heating wires, so that the same heating resistance wires are adopted by the semiconductor processing equipment, the heating resistance wires are convenient to purchase, and the semiconductor processing equipment can be conveniently and timely replaced and maintained.

Further, the surface of the resistance wire 130 may be coated with an oxidation-resistant coating to further reduce the oxidation degree of the resistance wire 130 and prolong the service life of the resistance wire 130.

The insulating support tube 120 may be made of various materials, such as glass, ceramic, and mica, and the embodiment of the present invention is not limited to the kind of the insulating support tube 120. Alternatively, the insulating support tube 120 may be a ceramic support tube, which has good chemical stability and thermal stability, so that the ceramic support tube is difficult to age and deteriorate, has good electrical and mechanical properties, and has the advantages of good thermal conductivity, mechanical strength, difficult damage and the like. Specifically, the ceramic support tube may be an alumina porcelain support tube, a steatite porcelain support tube, or the like.

The insulating housing has an accommodating space in which the heating zone and the insulating support tube 120 are both disposed, and the insulating housing can protect the heating zone, prevent impurities (e.g., dust) from accumulating in the heating zone, and avoid short-circuiting the heating zone. Both ends of the resistance wire 130 extend out of the accommodating space, so that the resistance wire 130 extending out of the accommodating space can be connected with a power supply line or a connecting terminal, and the resistance wire 130 is conveniently electrified.

The embodiment of the utility model discloses in auxiliary heater 100, use oxidation resistance wire 130 to replace the tungsten filament, the difficult oxidation of oxidation resistance wire 130 under the condition of high temperature to make oxidation resistance wire 130's life longer, and need not to the insulating casing evacuation, simplify auxiliary heater 100's preparation process, simultaneously, the insulating casing need not special treatment (for example coating reflection stratum), thereby makes auxiliary heater 100's cost lower. The auxiliary heater 100 adopts high-temperature stable components, so that the auxiliary heater 100 is difficult to damage under the high-temperature condition, the fault rate of the auxiliary heater 100 is reduced, the stability of the auxiliary heater 100 is improved, the service time of the auxiliary heater 100 is prolonged, frequent replacement and maintenance of the auxiliary heater 100 are avoided, the maintenance time is reduced, and the productivity of semiconductor processing equipment can be improved.

As described above, the insulation housing has a receiving space, and specifically, the insulation housing may include the insulation sleeve 110 and the insulation head 140, the insulation head 140 is disposed at the pipe orifice of the insulation sleeve 110, so that the insulation head 140 and the insulation sleeve 110 can form the receiving space, and the two ends of the antioxidant resistance wire 130 penetrate through the insulation head 140 and extend out of the receiving space, so that the manner of forming the receiving space is simple, convenient to set, and easy to operate. Meanwhile, when the antioxidant resistance wire 130 breaks down, the insulating end enclosure 140 can be detached, so that the antioxidant resistance wire 130 is replaced, the maintenance is convenient, and the maintainability of the auxiliary heater 100 is improved.

The insulating sleeve 110 may be made of various materials, such as glass and ceramic, and the embodiment of the present invention is not limited to the kind of the insulating sleeve 110. Alternatively, the insulating sleeve 110 may be a quartz sleeve. Since the quartz sleeve has the characteristics of high temperature resistance and low infrared band absorption rate, heat emitted from the heating zone penetrates through the quartz sleeve as much as possible, so that the wafer bearing part 300 can be heated well, the heating efficiency of the auxiliary heater 100 is improved, the auxiliary heater 100 can heat the wafer bearing part 300 quickly, and the process time is reduced.

Two ends of the antioxidant resistance wire 130 penetrate through the insulating end enclosure 140, so that the insulating end enclosure 140 can fix the two ends of the antioxidant resistance wire 130, the two ends of the antioxidant resistance wire 130 are prevented from being contacted, and short circuit is avoided. Specifically, the insulating end enclosure 140 may be provided with two first mounting holes, and two ends of the antioxidant resistance wire 130 respectively penetrate through the two first mounting holes. The fixing mode is simple, convenient to operate and reliable in fixing effect. Further, the first mounting hole needs to be tightly fitted with the antioxidant resistance wire 130 to prevent the antioxidant resistance wire 130 from loosening. The resistance wire 130 extending out of the insulating sleeve 110 may be connected to a power line or a connection terminal, so as to conveniently energize the resistance wire 130.

Optionally, the auxiliary heater 100 may further include a thermocouple 150, a first end of the thermocouple 150 is located in the insulation support tube 120, a second end of the thermocouple 150 protrudes out of the accommodating space through the insulation cap 140, and a temperature measuring portion of the thermocouple 150 is located at the first end. The thermocouple 150 can measure the temperature of the heating area, thereby facilitating the control of the heating temperature of the auxiliary heater 100, and avoiding the burning out of the auxiliary heater 100 due to an excessive temperature, thereby reducing the failure rate of the auxiliary heater 100 and prolonging the service life of the auxiliary heater 100.

Further, the first end of the thermocouple 150 may be located in the regions 1/3 to 2/3 of the heating region, that is, the temperature measuring portion of the thermocouple 150 is located in the regions 1/3 to 2/3 of the heating region, and the regions 1/3 to 2/3 of the heating region refer to the middle of the heating region, and the temperature in this region is relatively uniform, so that the thermocouple 150 can accurately measure the temperature of the heating region, thereby improving the accuracy of the heating temperature of the auxiliary heater 100.

Specifically, the second mounting hole may be opened in the insulating head 140, and the second end of the thermocouple 150 passes through the second mounting hole, so that the thermocouple 150 can be fixed by the insulating head 140, and this fixing manner is simple, convenient to operate, and reliable in fixing effect, thereby preventing the thermocouple 150 from being easily changed in position, which may result in the thermocouple 150 not being able to stably measure the heating temperature of the auxiliary heater 100. Further, the second mounting hole needs to be tightly fitted with the thermocouple 150 to prevent the thermocouple 150 from being loosened.

Based on the utility model discloses in the embodiment, the utility model discloses still disclose a semiconductor processing equipment, disclosed semiconductor processing equipment includes auxiliary heater 100, main heating portion 200, wafer supporting part 300 and quartz capsule 400, and main heating portion 200 encircles and sets up in the periphery wall of quartz capsule 400, and auxiliary heater 100 at least part and wafer supporting part 300 all set up in quartz capsule 400.

In the process of heating the wafer carrying part 300 by the main heating part 200, since the two sides of the wafer carrying part 300 are closer to the main heating part 200, the middle part of the wafer carrying part 300 is farther from the main heating part 200, and heat is conducted from the edge of the wafer carrying part 300 to the inside, the wafer carrying part 300 has a temperature distribution situation with high edge temperature and low middle temperature within a certain time, and the influence of the temperature on the film forming rate of the wafer is large, so that the film forming thickness of the wafer in the same wafer carrying part 300 is different, the uniformity of the wafer is poor, and the yield is low. Therefore, the auxiliary heater 100 located in the quartz tube 400 can heat the middle portion of the wafer carrier 300, so that the temperature of the wafer carrier 300 is uniform, and the wafer carrier 300 is prevented from having a temperature distribution with high edge temperature and low middle temperature, so that the film-forming thickness of the wafer in the same wafer carrier 300 is uniform, the uniformity of the wafer is high, and the yield is high.

Meanwhile, the main heating part 200 and the auxiliary heater 100 heat the wafer carrier 300 together, so that the wafer carrier 300 is heated at a high speed, and the temperature of the wafer carrier 300 can reach the process temperature in a short time, thereby processing the wafer quickly, reducing the processing time of the wafer, and further improving the productivity of the semiconductor processing equipment. The main heating part 200 is a known art, and is not described herein for brevity.

The quartz tube 400 has characteristics of high temperature resistance and low infrared band absorption rate, and heat emitted from the main heating part 200 can be radiated to the wafer carrying part 300 through the quartz tube 400 as much as possible, so that the wafer carrying part 300 can be heated well, the heating efficiency of the main heating part 200 is improved, and the wafer carrying part 300 can be heated faster by the main heating part 200.

As described above, the auxiliary heater 100 needs to heat the middle portion of the wafer carrier 300. Optionally, the auxiliary heater 100 may be disposed opposite to the middle portion of the wafer carrier 300, so that the heat generated by the auxiliary heater 100 is radiated to the middle portion of the wafer carrier 300 more, and thus the auxiliary heater 100 can heat the middle portion of the wafer carrier 300 better, so that the temperature of the wafer carrier 300 is more uniform, and thus the uniformity of the wafer is higher and the yield is higher.

In order to further increase the heating effect and the heating speed of the auxiliary heater 100 on the middle portion of the wafer carrier 300, in an alternative embodiment, the number of the auxiliary heaters 100 may be multiple, and multiple auxiliary heaters 100 may be spaced in the quartz tube 400. The plurality of auxiliary heaters 100 heat the wafer carrier 300 together, so that the heating effect and the heating speed of the middle portion of the wafer carrier 300 are better and faster, and the temperature of the wafer carrier 300 can reach the process temperature in a shorter time, thereby processing the wafer faster, further reducing the processing time of the wafer, and further improving the productivity of the semiconductor processing equipment.

Further, the length of the heating zone may be m, the length of the wafer carrier 300 may be n, m is greater than or equal to n + x, x is greater than or equal to 20 cm and less than or equal to 60 cm, that is, the length of the heating zone is greater than the length of the wafer carrier 300 by 20 cm to 60 cm, so that the wafer carrier 300 can be heated by the heating zone within the full length range of the wafer carrier 300, and the heating zone can heat the wafer carrier 300 more effectively and rapidly.

In the embodiment of the present invention, the semiconductor processing apparatus may further include a transfer mechanism for transferring the wafer carrier 300, and the transfer mechanism may be provided with at least one auxiliary heater 100. In this embodiment, the distance between the auxiliary heater 100 provided in the transfer mechanism and the wafer carrier 300 is short, so that the auxiliary heater 100 can heat the wafer carrier 300 more efficiently. Meanwhile, the auxiliary heater 100 can heat the wafer carrier 300 on the transfer mechanism at any time.

The utility model discloses what the key description in the above embodiment is different between each embodiment, and different optimization characteristics are as long as not contradictory between each embodiment, all can make up and form more preferred embodiment, consider that the literary composition is succinct, then no longer describe here.

The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims (10)

1. An auxiliary heater of semiconductor processing equipment is characterized by comprising an insulating shell, an insulating support tube (120) and an oxidation resistance wire (130); wherein:

the anti-oxidation resistance wire (130) is at least partially wound on the periphery of the insulating support tube (120), a heating area is formed on the insulating support tube (120), the insulating shell is provided with an accommodating space, the heating area and the insulating support tube (120) are arranged in the accommodating space, and two ends of the anti-oxidation resistance wire (130) extend out of the accommodating space.

2. The auxiliary heater of claim 1, wherein the heating zone comprises a plurality of sequentially connected spiral turns, and a refractory material portion is disposed between any adjacent two of the spiral turns.

3. The auxiliary heater of semiconductor processing equipment as claimed in claim 2, wherein the distance between any two adjacent spiral turns and the diameter of the oxidation resistance wire (130) satisfy P ≥ 1.5d, wherein: p is the distance between two adjacent spiral sub-coils, and d is the diameter of the antioxidant resistance wire (130).

4. The auxiliary heater of a semiconductor processing apparatus as claimed in claim 2, wherein the refractory material portion is composed of high purity alumina fiber.

5. The auxiliary heater of a semiconductor processing device as claimed in claim 1, wherein the insulating housing comprises an insulating sleeve (110) and an insulating head (140), the insulating head (140) is disposed at a pipe orifice of the insulating sleeve (110) to form the accommodating space, and two ends of the resistance wire (130) penetrate through the insulating head (140) and extend out of the accommodating space.

6. The auxiliary heater of a semiconductor processing apparatus as claimed in claim 5, further comprising a thermocouple (150), wherein a first end of the thermocouple (150) is located in the insulating support tube (120), a second end of the thermocouple (150) protrudes out of the accommodating space through the insulating cap (140), and a temperature measuring portion of the thermocouple (150) is located at the first end.

7. The auxiliary heater of the semiconductor processing equipment as claimed in claim 6, wherein the insulating end enclosure (140) is provided with two first mounting holes and a second mounting hole, two ends of the oxidation resistance wire (130) respectively penetrate through the two first mounting holes, and the second end penetrates through the second mounting hole.

8. The supplemental heater of claim 6, wherein said first end is located in a region 1/3 through 2/3 of said heating zone.

9. The auxiliary heater of semiconductor processing equipment as claimed in claim 1, wherein the oxidation resistance wire (130) is an iron chromium aluminum resistance heating wire.

10. The auxiliary heater of a semiconductor processing apparatus as claimed in claim 1, wherein the insulating support tube (120) is a ceramic support tube.

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