CN111524835B - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN111524835B CN111524835B CN202010359496.7A CN202010359496A CN111524835B CN 111524835 B CN111524835 B CN 111524835B CN 202010359496 A CN202010359496 A CN 202010359496A CN 111524835 B CN111524835 B CN 111524835B
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- auxiliary heater
- semiconductor processing
- insulating
- resistance wire
- processing apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
Abstract
The invention discloses a semiconductor processing device, which comprises an auxiliary heater, a main heating part, a wafer bearing part and a quartz tube, wherein: the main heating part is arranged around the outer peripheral wall of the quartz tube, and at least part of the auxiliary heater and the wafer bearing part are arranged in the quartz tube; the auxiliary heater comprises an insulating sleeve, an insulating supporting tube, an antioxidant resistance wire and an insulating end enclosure; the periphery of insulating stay tube is twined at least in part to the anti-oxidant resistance wire, and forms the zone of heating on the insulating stay tube, and the zone of heating and insulating stay tube all set up in insulation support pipe, and insulating head sets up in insulation support pipe's mouth of pipe department, and the both ends of anti-oxidant resistance wire pass insulating head. The scheme can solve the problem that the capacity of the semiconductor processing equipment is limited to be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to semiconductor processing equipment.
Background
The photovoltaic power generation system is a novel power generation system which directly converts solar radiation energy into electric energy by utilizing the photovoltaic effect of a solar cell semiconductor material. Solar cells, also known as photovoltaic cells, are the core devices in photovoltaic power generation systems. Currently, the most mature and commercially valuable solar cell with the widest market applications is the crystalline silicon solar cell. The reflection loss rate of sunlight on the surface of the crystal silicon is as high as about 35%, and the final conversion efficiency of the solar cell is seriously influenced. In order to improve the conversion efficiency, i.e. reduce the reflection of sunlight from the surface of crystalline silicon and increase the refractive index of sunlight, one or more layers of silicon dioxide or silicon oxynitride or silicon nitride antireflection films are often deposited on the surface of crystalline silicon. The antireflection film not only can reduce the emission of sunlight on the surface of crystalline silicon, but also can play a role in passivating and protecting the surface of the crystalline silicon. Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment adopts a Plasma Enhanced Chemical Vapor Deposition technology, makes reaction gas generate glow discharge by using a radio frequency electric field under the condition of low pressure, ionizes the Plasma, and promotes the generation of reactive groups, so that silane and ammonia gas can react at a lower temperature (200-450 ℃), the complexity of the process is reduced, the service life of a crystalline silicon solar cell is effectively prevented from being attenuated, and the method is widely applied to evaporation of an antireflection film on the surface of the crystalline silicon solar cell.
At present, an auxiliary heater of a PECVD apparatus is a tungsten filament lamp tube structure, as shown in fig. 1, a tungsten filament 10 is easily oxidized at a high temperature, so that a quartz lamp tube 20 needs to be vacuumized or vacuum-packaged, which results in a complicated preparation process of the auxiliary heater, and meanwhile, the auxiliary heater of such a structure has a high failure rate, needs to be frequently replaced and maintained, which results in a limitation in increasing the productivity of the PECVD apparatus.
Disclosure of Invention
The invention discloses a semiconductor processing device, which can solve the problem that the capacity of the semiconductor processing device is limited to be improved.
In order to solve the problems, the invention adopts the following technical scheme:
the embodiment of the invention discloses semiconductor processing equipment, which comprises an auxiliary heater, a main heating part, a wafer bearing part and a quartz tube, wherein:
the main heating part is arranged on the peripheral wall of the quartz tube in a surrounding mode, and at least part of the auxiliary heater and the wafer bearing part are arranged in the quartz tube;
the auxiliary heater comprises an insulating sleeve, an insulating supporting tube, an antioxidant resistance wire and an insulating end enclosure; the anti-oxidation resistance wire is at least partially wound on the periphery of the insulation supporting pipe, a heating area is formed on the insulation supporting pipe, the heating area and the insulation supporting pipe are arranged in the insulation sleeve, the insulation end socket is arranged at the pipe orifice of the insulation sleeve, and two ends of the anti-oxidation resistance wire penetrate through the insulation end socket.
The technical scheme adopted by the invention can achieve the following beneficial effects:
in the semiconductor processing equipment disclosed by the embodiment of the invention, the auxiliary heater uses the oxidation resistance wire to replace a tungsten wire, the oxidation resistance wire is difficult to oxidize under the condition of high temperature, so that the service life of the oxidation resistance wire is longer, the insulating sleeve does not need to be vacuumized, the preparation process of the auxiliary heater is simplified, and meanwhile, the insulating sleeve does not need to be specially treated (such as a light reflecting layer is coated), so that the cost of the auxiliary heater is lower. The auxiliary heater adopts high-temperature stable parts, so that the auxiliary heater is difficult to damage under the high-temperature condition, the fault rate of the auxiliary heater is reduced, the stability of the auxiliary heater is improved, the auxiliary heater is prevented from being frequently replaced and maintained, the maintenance time is shortened, and the productivity of semiconductor processing equipment can be improved.
Meanwhile, the wafer bearing part and the auxiliary heater are both arranged in the main heating part. The auxiliary heater positioned in the quartz tube can heat the middle part of the wafer bearing part, so that the temperature of the wafer bearing part is uniform, the temperature distribution situation that the edge temperature of the wafer bearing part is high and the middle temperature is low is prevented, the film forming thickness of the wafer in the same wafer bearing part is uniform, the uniformity of the wafer is high, and the yield is high. Meanwhile, the main heating part and the auxiliary heater heat the wafer bearing part together, so that the wafer bearing part is heated at a higher speed, the temperature of the wafer bearing part can reach the process temperature in a shorter time, the wafer can be processed at a higher speed, the processing process time of the wafer is reduced, and the productivity of the semiconductor processing equipment is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the background art of the present invention, the drawings needed to be used in the embodiments or the background art will be briefly described below, and it is obvious for those skilled in the art to obtain other drawings without any inventive exercise.
FIG. 1 is a schematic diagram of a portion of a typical auxiliary heater in the prior art;
FIG. 2 is a schematic structural diagram of an auxiliary heater according to an embodiment of the present invention;
FIG. 3 is a schematic view of a portion of an auxiliary heater according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
fig. 5 is a schematic structural view of a transfer mechanism disclosed in the embodiment of the present invention;
fig. 6 is a schematic partial structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
Description of reference numerals:
10-tungsten filament, 20-quartz lamp tube;
100-auxiliary heater, 110-insulating sleeve, 120-insulating support tube, 130-antioxidant resistance wire, 140-insulating end socket and 150-thermocouple;
200-a main heating part;
300-a wafer carrier;
400-quartz tube;
500-transferring mechanism, 510-transferring body, 511-supporting rod and 520-mounting piece;
600-bracket.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 2 to 6, an embodiment of the present invention discloses a semiconductor processing apparatus, which includes an auxiliary heater 100, a main heating unit 200, a wafer support 300, and a quartz tube 400, wherein the main heating unit 200 is disposed around an outer circumferential wall of the quartz tube 400, and at least a portion of the auxiliary heater 100 and the wafer support 300 are disposed in the quartz tube 400.
In the process of heating the wafer carrying part 300 by the main heating part 200, the wafer carrying part 300 may be a graphite boat, since the two sides of the wafer carrying part 300 are closer to the main heating part 200, the middle part of the wafer carrying part 300 is farther from the main heating part 200, and heat is conducted from the edge of the wafer carrying part 300 to the inside, the wafer carrying part 300 has a temperature distribution situation that the edge temperature is high and the middle temperature is low within a certain time, and the influence of the temperature on the film forming rate of the wafer is large, so that the film forming thickness of the wafer in the same wafer carrying part 300 is different, the uniformity of the wafer is poor, and the yield is low. Therefore, the auxiliary heater 100 located in the quartz tube 400 can heat the middle portion of the wafer carrier 300, so that the temperature of the wafer carrier 300 is uniform, and the wafer carrier 300 is prevented from having a temperature distribution with high edge temperature and low middle temperature, so that the film-forming thickness of the wafer in the same wafer carrier 300 is uniform, the uniformity of the wafer is high, and the yield is high.
Meanwhile, the main heating part 200 and the auxiliary heater 100 heat the wafer carrier 300 together, so that the wafer carrier 300 is heated at a high speed, and the temperature of the wafer carrier 300 can reach the process temperature in a short time, thereby processing the wafer quickly, reducing the processing time of the wafer, and further improving the productivity of the semiconductor processing equipment. The main heating portion 200 and the wafer carrying portion 300 are known in the art, and therefore, for brevity, are not described herein again.
The quartz tube 400 has characteristics of high temperature resistance and low infrared band absorption rate, and heat emitted from the main heating part 200 can be radiated to the wafer carrying part 300 through the quartz tube 400 as much as possible, so that the wafer carrying part 300 can be heated well, the heating efficiency of the main heating part 200 is improved, and the wafer carrying part 300 can be heated faster by the main heating part 200.
The auxiliary heater 100 includes an insulating sleeve 110, an insulating support tube 120, an oxidation resistance wire 130, and an insulating end enclosure 140.
The antioxidant resistance wire 130 is at least partially wound around the periphery of the insulating support tube 120, and the antioxidant resistance wire 130 forms a heating zone on the insulating support tube 120, specifically, at least a portion of the antioxidant resistance wire 130 can be spirally wound around the insulating support tube 120, so that the antioxidant resistance wire 130 forms a spiral heating zone. In the specific preparation process, the oxidation resistance wire 130 may be first fired into a spiral shape, and then the spiral oxidation resistance wire 130 is mounted on the insulating support tube 120, or the oxidation resistance wire 130 may be first spirally wound on the insulating support tube 120 and then fired into a spiral shape.
The resistance wire 130 can generate a large amount of heat when the power is turned on, so that the auxiliary heater 100 can heat the wafer carrier 300 well and at a high heating speed. Insulating stay tube 120 plays the effect of bearing oxidation resistance wire 130, and can prevent the short circuit between arbitrary adjacent two heating sub-circles in the zone of heating to avoid the relatively poor problem of effect of generating heat to appear in the zone of heating, and then improve the stability in the zone of heating.
In order to further improve the stability of the heating zone, the heating zone may include a plurality of consecutive spiral turns, and the distance between any two adjacent spiral turns and the diameter of the antioxidant resistance wire 130 may satisfy that P is greater than or equal to 1.5d, wherein: p is the distance between two adjacent spiral sub-circles, d is the diameter of oxidation resistance wire 130, so that the distance between two arbitrary adjacent spiral sub-circles in the zone of heating is great, prevent the phenomenon that short circuit or strike sparks and puncture from appearing between two arbitrary adjacent spiral sub-circles, further improve the stability in the zone of heating, the life of extension oxidation resistance wire 130, thereby reduce auxiliary heater 100's fault rate, and then improve auxiliary heater 100's stability, avoid often changing and maintaining this auxiliary heater 100, reduce maintenance duration, finally can improve semiconductor processing equipment's productivity.
Further, P may be greater than or equal to 1.5d, and P may be less than or equal to 2.5d, so that the spiral sub-loops of the heating region are relatively dense, the heating value of the heating region is increased, so that the auxiliary heater 100 can generate more heat, and thus the auxiliary heater 100 has a better heating effect on the wafer carrier 300, and the heating speed is faster.
The antioxidant resistance wire 130 may deform at high temperature, which causes contraction of the heating area, so that the distance between each spiral coil in the heating area decreases, and further causes short circuit or spark breakdown between two adjacent spiral coils in the heating area. In this regard, in an alternative embodiment, the heating zone may comprise a plurality of helical turns as described above, the helical turns being connected in series, with a refractory section being provided between any two adjacent helical turns. The refractory material part can prevent short circuit or spark breakdown between any two adjacent spiral sub-rings, so that the stability of a heating area is further improved, the service life of the antioxidant resistance wire 130 is prolonged, the fault rate of the auxiliary heater 100 is reduced, the stability of the auxiliary heater 100 is further improved, frequent replacement and maintenance of the auxiliary heater 100 are avoided, the maintenance time is shortened, and the productivity of semiconductor processing equipment can be further improved.
Meanwhile, the spiral coil can be clamped by the refractory material portion, the shrinkage of the heating area is limited, and therefore the shrinkage of the heating area caused by high-temperature deformation of the antioxidant resistance wire 130 can be prevented, the distance between each spiral coil in the heating area can be kept stable, and the phenomenon that short circuit or fire breakdown occurs between two adjacent spiral coils is avoided. The refractory section is required to satisfy the insulation requirement.
The refractory material portion may be of various kinds, for example, silica, calcium oxide, ceramics, and the like. Alternatively, the refractory section may be a high purity alumina fiber section. The high-purity alumina fiber part has the advantages of high melting point, good thermal stability, high hardness, good wear resistance, high mechanical strength, good electrical insulation, corrosion resistance and the like. Specifically, the high-purity alumina fiber part can be filled between any two adjacent spiral sub-rings through a vacuum wet forming technology, and the process method is simple to operate and good in effect, so that the refractory material part is formed well. In the embodiment of the present invention, the type of the refractory material portion is not limited in the arrangement manner.
The refractory material part filled between any two adjacent spiral sub-coils can wrap 1/2 or 2/3 of the spiral sub-coils, that is, 1/2 part or 2/3 part of the spiral sub-coils close to the insulation support tube 120 is embedded in the refractory material part, so that the refractory material part has a good limiting effect on the two adjacent spiral sub-coils, and the heating area shrinkage is further limited.
In the embodiment of the present invention, the kind of the oxidation resistance wire 130 may be various, for example, a nickel-chromium resistance heating wire, an iron-chromium-aluminum resistance heating wire, and the like, and the kind of the oxidation resistance wire 130 in the embodiment of the present invention is not limited. However, since the nichrome resistance heater wire is made of a rare nickel metal material, the price of the nichrome resistance heater wire is higher than that of the iron-chromium-aluminum resistance heater wire, which results in higher cost of the auxiliary heater 100. Therefore, in the embodiment of the present invention, the antioxidant resistance wire 130 may be an iron-chromium-aluminum resistance heater wire, because the iron-chromium-aluminum resistance heater wire has the advantages of high use temperature, the highest use temperature of 1400 ℃, long service life, high surface load, good antioxidant performance, high resistivity, low price, and the like. Meanwhile, the heating resistance wires adopted by the main heating part 200 of the semiconductor processing equipment are iron-chromium-aluminum resistance heating wires, so that the same heating resistance wires are adopted by the semiconductor processing equipment, the heating resistance wires are convenient to purchase, and the semiconductor processing equipment can be conveniently and timely replaced and maintained.
Further, the surface of the resistance wire 130 may be coated with an oxidation-resistant coating to further reduce the oxidation degree of the resistance wire 130 and prolong the service life of the resistance wire 130.
The insulating support tube 120 may be made of various kinds, such as glass, ceramic, and mica, and the kind of the insulating support tube 120 is not limited in the embodiment of the present invention. Alternatively, the insulating support tube 120 may be a ceramic support tube, which has good chemical stability and thermal stability, so that the ceramic support tube is difficult to age and deteriorate, has good electrical and mechanical properties, and has the advantages of good thermal conductivity, mechanical strength, difficult damage and the like. Specifically, the ceramic support tube may be an alumina porcelain support tube, a steatite porcelain support tube, or the like.
The heating zone and the insulating support tube 120 are both disposed in the insulating sleeve 110, and the insulating sleeve 110 can protect the heating zone and prevent impurities (e.g., dust) from collecting in the heating zone and causing short circuit of the heating zone. Specifically, the insulating sleeve 110 may be various types, such as glass, ceramic, and the like, and the type of the insulating sleeve 110 is not limited in the embodiment of the present invention. Alternatively, the insulating sleeve 110 may be a quartz sleeve. Because the quartz sleeve has the characteristics of high temperature resistance and low infrared band absorption rate, heat emitted by the heating zone penetrates through the quartz sleeve as much as possible, so that the wafer bearing part 300 can be heated better, the heating efficiency of the auxiliary heater 100 is improved, the auxiliary heater 100 can heat the wafer bearing part 300 faster, the process time is reduced, and the capacity of semiconductor processing equipment is improved.
The insulation end enclosure 140 is arranged at the pipe orifice of the insulation sleeve 110, and two ends of the antioxidant resistance wire 130 penetrate through the insulation end enclosure 140, so that the two ends of the antioxidant resistance wire 130 can be fixed by the insulation end enclosure 140, the two ends of the antioxidant resistance wire 130 are prevented from contacting, and short circuit is avoided. Specifically, the insulating end enclosure 140 may be provided with two first mounting holes, and two ends of the antioxidant resistance wire 130 respectively penetrate through the two first mounting holes. The fixing mode is simple, convenient to operate and reliable in fixing effect. Further, the first mounting hole needs to be tightly fitted with the antioxidant resistance wire 130 to prevent the antioxidant resistance wire 130 from loosening. The resistance wire 130 extending out of the insulating sleeve 110 may be connected to a power line or a connection terminal, so as to conveniently energize the resistance wire 130.
In the semiconductor processing equipment disclosed by the embodiment of the invention, the auxiliary heater 100 uses the oxidation resistance wire 130 to replace a tungsten wire, the oxidation resistance wire 130 is difficult to oxidize under the condition of high temperature, so that the service life of the oxidation resistance wire 130 is longer, the insulating sleeve 110 does not need to be vacuumized, the preparation process of the auxiliary heater 100 is simplified, and meanwhile, the insulating sleeve 110 does not need to be specially processed (such as a light reflection coating), so that the cost of the auxiliary heater 100 is lower. The auxiliary heater 100 adopts high-temperature stable parts, so that the auxiliary heater 100 is difficult to damage under the high-temperature condition, the fault rate of the auxiliary heater 100 is reduced, the stability of the auxiliary heater 100 is improved, frequent replacement and maintenance of the auxiliary heater 100 are avoided, the maintenance time is shortened, and the productivity of semiconductor processing equipment can be further improved.
Optionally, the auxiliary heater 100 may further include a thermocouple 150, a first end of the thermocouple 150 may be located inside the insulation support tube 120, a second end of the thermocouple 150 may protrude out of the insulation sleeve 110 through the insulation cap 140, and a temperature measuring portion of the thermocouple 150 is located at the first end. The thermocouple 150 can measure the temperature of the heating area, thereby facilitating the control of the heating temperature of the auxiliary heater 100, and avoiding the burning out of the auxiliary heater 100 due to an excessive temperature, thereby reducing the failure rate of the auxiliary heater 100 and prolonging the service life of the auxiliary heater 100.
Further, the first end of the thermocouple 150 may be located in the regions 1/3 to 2/3 of the heating region, that is, the temperature measuring portion of the thermocouple 150 is located in the regions 1/3 to 2/3 of the heating region, and the regions 1/3 to 2/3 of the heating region refer to the middle of the heating region, and the temperature in this region is relatively uniform, so that the thermocouple 150 can accurately measure the temperature of the heating region, thereby improving the accuracy of the heating temperature of the auxiliary heater 100. Specifically, the second mounting hole may be opened in the insulating head 140, and the second end of the thermocouple 150 passes through the second mounting hole, so that the thermocouple 150 can be fixed by the insulating head 140, and this fixing manner is simple, convenient to operate, and reliable in fixing effect, thereby preventing the thermocouple 150 from being easily changed in position, which may result in the thermocouple 150 not being able to stably measure the heating temperature of the auxiliary heater 100. Further, the second mounting hole needs to be tightly fitted with the thermocouple 150 to prevent the thermocouple 150 from being loosened.
In the embodiment of the present invention, the auxiliary heater 100 is at least partially disposed in the quartz tube 400, specifically, the two ends of the quartz tube 400 may be provided with the brackets 600, the auxiliary heater 100 is at least partially disposed in the quartz tube 400 through the brackets 600, and the auxiliary heater 100 is disposed opposite to the middle portion of the wafer carrying part 300, the brackets 600 can play a role of supporting the auxiliary heater 100, so that the auxiliary heater 100 can be better disposed in the quartz tube 400, and the disposition is simple and reliable, convenient to dispose, and easy to operate.
As described above, the auxiliary heater 100 needs to heat the middle portion of the wafer carrier 300. Optionally, the auxiliary heater 100 may be disposed opposite to the middle portion of the wafer carrier 300, so that the heat generated by the auxiliary heater 100 is radiated to the middle portion of the wafer carrier 300 more, and thus the auxiliary heater 100 can heat the middle portion of the wafer carrier 300 better, so that the temperature of the wafer carrier 300 is more uniform, and thus the uniformity of the wafer is higher and the yield is higher.
In order to further increase the heating effect and the heating speed of the auxiliary heater 100 on the middle portion of the wafer carrier 300, in an alternative embodiment, the number of the auxiliary heaters 100 may be multiple, and multiple auxiliary heaters 100 may be spaced in the quartz tube 400. The plurality of auxiliary heaters 100 heat the wafer carrier 300 together, so that the heating effect and the heating speed of the middle portion of the wafer carrier 300 are better and faster, and the temperature of the wafer carrier 300 can reach the process temperature in a shorter time, thereby processing the wafer faster, further reducing the processing time of the wafer, and further improving the productivity of the semiconductor processing equipment.
Further, the length of the heating zone may be m, the length of the wafer carrier 300 may be n, m is greater than or equal to n + x, x is greater than or equal to 20 cm and less than or equal to 60 cm, that is, the length of the heating zone is greater than the length of the wafer carrier 300 by 20 cm to 60 cm, so that the wafer carrier 300 can be heated by the heating zone within the full length range of the wafer carrier 300, and the heating zone can heat the wafer carrier 300 more effectively and rapidly.
In the embodiment of the present invention, the semiconductor processing apparatus may further include a transfer mechanism 500 for transferring the wafer carrier 300, and at least one auxiliary heater 100 may be disposed on the transfer mechanism 500. In this embodiment, the distance between the auxiliary heater 100 provided in the transfer mechanism and the wafer carrier 300 is short, so that the auxiliary heater 100 can heat the wafer carrier 300 more efficiently. Meanwhile, the auxiliary heater 100 can heat the wafer carrier 300 on the transfer mechanism 500 at any time.
Specifically, the transferring mechanism 500 may include a transferring body 510 and an installation member 520, the transferring body 510 may include at least two support rods 511, the two support rods 511 are disposed at intervals, and the auxiliary heater 100 is disposed between the at least two support rods 511 through the installation member 520. In this embodiment, when the wafer carrier 300 is mounted on the transfer body 510, the wafer carrier 300 can cover at least two support rods 511, so that the region between the at least two support rods 511 can be opposite to the middle portion of the wafer carrier 300, and the auxiliary heater 100 disposed between the at least two support rods 511 can heat the middle portion of the wafer carrier 300, so that the processed wafers can be uniform. The middle portion of the wafer carrier 300 is the portion of the wafer carrier 300 that faces the transfer body 510 in the region between the wafer carrier 300 and the two support rods 511, and extends along the longitudinal direction of the wafer carrier 300, that is, the middle portion of the wafer carrier 300 is the middle portion of the wafer carrier 300 in the width direction.
In order to further improve the uniformity of the wafers and the productivity of the semiconductor processing equipment, in an alternative embodiment, the distance between any adjacent auxiliary heater 100 and the supporting rod 511 may be equal, that is, in a case that the wafer carrier 300 is disposed on the transfer body 510, the auxiliary heater 100 may be opposite to the middle portion of the wafer carrier 300 with high precision, so that the middle portion of the wafer carrier 300 can be accurately opposite to the auxiliary heater 100, and the uniformity of the wafers and the productivity of the semiconductor processing equipment can be further improved.
As described above, the auxiliary heater 100 is disposed on the transfer body 510 through the mounting members 520, specifically, the number of the mounting members 520 may be two, two mounting members 520 are respectively fixedly mounted at two ends of the supporting rod 511, and both mounting members 520 are connected to the auxiliary heater 100. In this case, the two mounting members 520 certainly improve the reliability of the auxiliary heater 100 mounted on the transfer main body 510, so that the auxiliary heater 100 is reliably mounted on the transfer main body 510, and the two mounting members 520 can reduce the stress on the portion where the auxiliary heater 100 is connected to the mounting members 520, so that the stress on the auxiliary heater 100 is balanced, thereby improving the reliability of the transfer mechanism 500.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (13)
1. A semiconductor processing apparatus, comprising: an auxiliary heater (100), a main heating part (200), a wafer carrying part (300), and a quartz tube (400), wherein:
the main heating part (200) is arranged around the periphery wall of the quartz tube (400), and at least part of the auxiliary heater (100) and the wafer bearing part (300) are arranged in the quartz tube (400);
the auxiliary heater (100) comprises an insulating sleeve (110), an insulating support tube (120), an antioxidant resistance wire (130) and an insulating end enclosure (140); the antioxidant resistance wire (130) is at least partially wound on the periphery of the insulating support tube (120), a heating zone is formed on the insulating support tube (120), the heating zone and the insulating support tube (120) are both arranged in the insulating sleeve (110), the insulating seal head (140) is arranged at the pipe orifice of the insulating sleeve (110), and two ends of the antioxidant resistance wire (130) penetrate through the insulating seal head (140); the heating zone comprises a plurality of spiral sub-coils which are connected in sequence, a refractory material part is filled between any two adjacent spiral sub-coils, and the part of each spiral sub-coil close to the insulating support tube (120) is embedded in the refractory material part;
the semiconductor processing equipment also comprises a transfer mechanism (500) used for transporting the wafer bearing part (300), and at least one auxiliary heater (100) is arranged on the transfer mechanism (500);
move and carry mechanism (500) including moving and carrying body (510) and installed part (520), move and carry body (510) including two at least bracing pieces (511), two at least bracing piece (511) interval sets up, auxiliary heater (100) pass through installed part (520) set up in two at least between bracing piece (511).
2. The semiconductor processing equipment as claimed in claim 1, wherein the distance between any two adjacent spiral turns and the diameter of the oxidation resistance wire (130) satisfy P ≥ 1.5d, wherein: p is the distance between two adjacent spiral sub-coils, and d is the diameter of the antioxidant resistance wire (130).
3. The semiconductor processing apparatus of claim 1, wherein the refractory section is comprised of high purity alumina fibers.
4. The semiconductor processing apparatus according to claim 1, wherein the auxiliary heater (100) further comprises a thermocouple (150), a first end of the thermocouple (150) is located inside the insulating support tube (120), a second end of the thermocouple (150) protrudes out of the insulating sleeve (110) through the insulating cap (140), and a temperature measuring portion of the thermocouple (150) is located at the first end.
5. The semiconductor processing apparatus of claim 4, wherein the first end is located within a region 1/3 through 2/3 of the heating zone.
6. The semiconductor processing equipment as claimed in claim 4, wherein the insulating end enclosure (140) is provided with two first mounting holes and a second mounting hole, two ends of the antioxidant resistance wire (130) respectively penetrate through the two first mounting holes, and the second end penetrates through the second mounting hole.
7. The semiconductor processing apparatus according to claim 1, wherein the heating zone has a length of m, the wafer carrier (300) has a length of n, and m is greater than or equal to n + x, and 20 cm is greater than or equal to x is less than or equal to 60 cm.
8. The semiconductor processing apparatus of claim 1, wherein the oxidation resistance wire (130) is an iron-chromium-aluminum resistance heating wire.
9. The semiconductor processing apparatus of claim 1, wherein the insulating support tube (120) is a ceramic support tube.
10. The semiconductor processing apparatus according to claim 1, wherein the insulating sleeve (110) is a quartz sleeve.
11. The semiconductor processing apparatus according to claim 1, wherein both ends of the quartz tube (400) are provided with brackets (600), the auxiliary heater (100) is disposed in the quartz tube (400) at least partially through the brackets (600), and the auxiliary heater (100) is disposed opposite to a middle portion of the wafer carrier (300).
12. The semiconductor processing apparatus according to claim 1, wherein the auxiliary heater (100) is provided in plurality, and a plurality of auxiliary heaters (100) are provided at intervals in the quartz tube (400).
13. The semiconductor processing apparatus according to claim 1, wherein a distance between any adjacent auxiliary heater (100) and the supporting bar (511) is equal.
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| CN111816594B (en) * | 2020-08-28 | 2022-12-02 | 上海华力微电子有限公司 | Rapid thermal annealing equipment |
| CN112530826A (en) * | 2020-11-27 | 2021-03-19 | 北京北方华创微电子装备有限公司 | Bearing device of semiconductor heat treatment equipment and semiconductor heat treatment equipment |
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