CN208995147U - A kind of polycrystalline silicon reducing furnace - Google Patents
A kind of polycrystalline silicon reducing furnace Download PDFInfo
- Publication number
- CN208995147U CN208995147U CN201821173373.9U CN201821173373U CN208995147U CN 208995147 U CN208995147 U CN 208995147U CN 201821173373 U CN201821173373 U CN 201821173373U CN 208995147 U CN208995147 U CN 208995147U
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- Prior art keywords
- silicon rod
- chassis
- induction coil
- cooling water
- furnace
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 230000006698 induction Effects 0.000 claims abstract description 37
- 239000000498 cooling water Substances 0.000 claims abstract description 30
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 14
- 239000010439 graphite Substances 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011229 interlayer Substances 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 6
- 239000005052 trichlorosilane Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Abstract
The utility model discloses a kind of polycrystalline silicon reducing furnace, including furnace body, chassis, electrode, graphite card slot, silicon rod, induction coil, furnace body is fixedly connected with chassis constitutes a hollow bell-jar chamber；Furnace wall and chassis are double-layer structure, and cooling-water duct is equipped between chassis and the interlayer of furnace wall, and the bottom of furnace wall is correspondingly provided with cooling water inlet, and cooling water outlet is arranged at top, and the side on chassis is equipped with the cooling water inlet other side and is equipped with cooling water outlet；The utility model proposes so that induction coil is generated induced current to heating silicon rod by alternating current, temperature gradient on silicon rod can be made to reduce, it is possible to increase the maximum deposition radius of silicon rod；The utility model internal structure is rationally distributed, and the yield of separate unit reduction furnace improves much than existing reduction furnace, reduces the comprehensive energy consumption of polysilicon and production cost also accordingly.
Description
Technical field
The utility model relates to a kind of polycrystalline silicon reducing furnaces, belong to polysilicon preparation technical field.
Background technique
The shortage of the energy and the deterioration of environment propose huge challenge to development of modern society economy, in global range
The exhaustion of traditional energy and the continuous of oil price are risen, and the development of renewable new energy is extremely urgent.Solar energy is because clear
The unique advantages such as clean environmental protection, safe and reliable, rich reserves are to solve Sustainable Development in Future, the energy, environment and global warming to ask
The important channel of topic.Currently, photovoltaic power generation be the world today by solar energy it is most important it is a kind of in the way of, polysilicon is used for the sun
The yield of energy photovoltaic industry accounts for 90%, and the yield for semiconductor material accounts for 8%, and the yield for other field accounts for 2%.
China's production of polysilicon technology improves Siemens process essential core production equipment to improve based on Siemens process
It is Siemens reactor.Chemical vapor deposition occurs in Siemens reactor for trichlorosilane and hydrogen after rectification and purification
(CVD) process is the key that improvement Siemens process workshop section, which is in the bell-jar reactor for containing thin high purity silicon rods
Middle progress,.The mixture of high-purity trichlorosilane (TCS) and hydrogen is passed through in bell reaction device after preheating, in reactor
Middle TCS reacts production silicon with hydrogen.
The above method is the temperature by way of being passed through electric current to silicon rod to heat silicon rod to reach needed for reacting
(1323K-1423K).It is the heating power supply loaded that power supply used in reduction furnace in existing industrial production, which is with silicon rod resistance,.With
The increase of silicon rod diameter, silicon rod internal temperature gradient is bigger, i.e. silicon rod internal-external temperature difference is also bigger.Silicon rod surface temperature control exists
(1323K-1423K)；Therefore central temperature becomes larger.When silicon rod internal temperature reaches silicon rod fusing point (1414 DEG C), Jiu Huifa
Raw molten silicon phenomenon.And since increasing temperature gradient leads to bigger thermal stress, will lead to silicon rod can be broken, and be produced
The raw phenomenon of falling stick.
Summary of the invention
The technical problems to be solved in the utility model are as follows: silicon rod central temperature it is excessively high and occur molten silicon, because of thermal stress
Effect and what is generated fall stick and the shortcomings that Siemens's reduction furnace high energy consumption, high production cost.
The purpose of this utility model is to provide the novel polysilicon reduction furnace of a kind of high reliablity, high production efficiency, packets
Furnace body 1, chassis 2, electrode 9, graphite card slot 11, silicon rod 12, induction coil 10 are included, furnace body 1 is fixedly connected with composition one with chassis 2
Hollow bell-jar chamber；Furnace wall and chassis 2 are double-layer structure, are equipped with cooling-water duct between chassis 2 and the interlayer of furnace wall
3, the bottom of furnace wall is correspondingly provided with cooling water inlet 14, and cooling water outlet 15 is arranged at top, and the side on chassis 2 is equipped with cooling water inlet
14 other sides are equipped with cooling water outlet 15；Multipair silicon rod 12 is equipped with inside furnace body 1, each pair of silicon rod 12, which is separately connected, to be formed
U-typed is serially connected between the corresponding electrode 9 of multipair silicon rod 12 and connect afterwards with the positive and negative anodes of power supply 8, constitutes a circulation；Bottom
Disk 2 is equipped with multiple graphite card slots 11, graphite card slot 11 for fixing silicon rod 12, one end of electrode 9 in graphite card slot 11 with
Silicon rod 12 connects, and the other end stretches out outside chassis 2；Chassis 2 is equipped with more than one air inlet 5 and more than one gas outlet 6；
Induction coil 10 is connected with AC power source 7；And every 12 outside of silicon rod is all correspondingly provided with an induction coil 10, induction coil 10
Internal diameter be greater than silicon rod maximum growth size 13；Induction coil 10 is hollow structure, and centre can lead to cooling water.
Preferably, furnace body 1 described in the utility model is equipped with multiple observation windows 4.
The another object of the utility model is to provide the application method of the polycrystalline silicon reducing furnace, specifically includes following step
It is rapid:
(1) silicon rod 12 is preheated by power supply 8 to improve its electric conductivity, then proceeding to power supply is maintained at 12 surface of silicon rod
The mixed gas of high-purity trichlorosilane and hydrogen is passed through furnace body by air inlet 5 by 1323K-1423K, and gas is in high temperature silicon
Stick surface reactive deposition obtains polysilicon, and the tail gas for reacting generation is discharged by gas outlet 6；
(2) in reaction process, the cooling-water duct 3 of furnace body 1 and chassis 2 is connected, 1 temperature of furnace body is made to be maintained at 100 ~ 150
DEG C, 2 temperature of chassis is maintained at 150 ~ 200 DEG C；After 12 electrical breakdown of silicon rod, continues energization source 8, while indirect current source 7, make to feel
Coil 10 is answered to be powered；In induction heating, induced current caused by turbulence field of the induction coil 10 by generation heats silicon
Stick；By controlling 150 ~ 200 DEG C of temperature of induction coil to 10 cooling water supply of induction coil.
Preferably, the diameter of induction coil 10 described in the utility model is 140mm ~ 200mm, with a thickness of 1.2 ~ 3mm.Generally
In the case of selection, the size of induction coil 10 by the frequency of coil current by being determined；When by the frequency of coil current compared with
When big, the surface area of induction coil 10 will be bigger；For example, current frequency range is 50kHz ~ 800kHz, then induction coil copper
Pipe diameter is 140mm ~ 180mm(with a thickness of 1.27mm) or it is higher, it can be selected according to actual needs.
Compared with prior art, the utility model has the beneficial effects that
(1) the utility model solves the problems, such as common under traditional heating mode: what is generated by the effect of thermal stress falls
Stick.By using the mode that induction coil heats, during making siliceous deposits, the temperature gradient inside silicon rod is reduced, inside silicon rod
When the temperature difference is lower, built-in thermal stress is accordingly smaller, and the intensity of polycrystalline silicon rod increases, to be less prone to down stick.
(2) the utility model makes silicon rod maximum deposition diameter become larger, and improves single furnace output.
Detailed description of the invention
Fig. 1 is the positive structure schematic of the utility model polycrystalline silicon reducing furnace；
Fig. 2 is the top view of the utility model；
Schematic diagram of the Fig. 3 between U-shaped silicon rod and multipair silicon rod.
In figure: 1- furnace body；The chassis 2-；3- cooling-water duct；4- form；The gas access 5-；6- gas vent；7- exchange
Electricity；8- power supply；9- electrode；10- induction coil；11- graphite card slot；12- silicon rod；13- silicon rod maximum growth size；14- is cooling
Water inlet；15- cooling water outlet.
Specific embodiment
The utility model is described in further detail in the following with reference to the drawings and specific embodiments, but the guarantor of the utility model
Shield range is not limited to the content.
Embodiment 1
A kind of polycrystalline silicon reducing furnace, including including furnace body 1, chassis 2, electrode 9, graphite card slot 11, silicon rod 12, induction coil
10, furnace body 1 is fixedly connected with chassis 2 constitutes a hollow bell-jar chamber；Furnace wall and chassis 2 are double-layer structure, 2 He of chassis
Cooling-water duct 3 is equipped between the interlayer of furnace wall, the bottom of furnace wall is correspondingly provided with cooling water inlet 14, and top has cooling water to go out
Mouth 15, the side on chassis 2 are equipped with 14 other side of cooling water inlet and are equipped with cooling water outlet 15；1 pair of silicon rod is equipped with inside furnace body 1
12, two silicon rods 12 connect to form U-typed, and the corresponding electrode 9 of silicon rod 12 is connect with the positive and negative anodes of power supply 8 respectively, constitute
One circulation；Chassis 2 is equipped with multiple graphite card slots 11, and graphite card slot 11 is for fixing silicon rod 12, and one end of electrode 9 is in graphite
It is connect in card slot 11 with silicon rod 12, the other end stretches out outside chassis 2；Chassis 2 is equipped with 2 air inlets 5 and a gas outlet 6；Induction
Coil 10 is connected with AC power source 7；And 12 outside of every silicon rod is all correspondingly provided with an induction coil 10, induction coil 10 it is interior
Diameter is greater than the maximum growth size 13 of silicon rod；Induction coil 10 is hollow structure, and centre can lead to cooling water, as shown in figures 1 and 2.
The application method of the present embodiment described device are as follows:
(1) silicon rod 12 is preheated by power supply 8 to improve its electric conductivity (electrical breakdown), then proceeding to power supply makes 12 table of silicon rod
Face is maintained between 1323K-1423K, and 12 surface of high temperature silicon rod can be centered around silicon rod 12 with deposit polycrystalline silicon, induction coil 10
Outside, the mixed gas of high-purity trichlorosilane and hydrogen is passed through furnace body by air inlet 5, gas reacts on high temperature silicon rod surface
Deposition obtains polysilicon, and the tail gas for reacting generation is discharged by gas outlet 6.
(2) in reaction process, the cooling-water duct 3 of furnace body 1 and chassis 2 is connected, 1 temperature of furnace body is made to be maintained at 100 ~ 150
Between DEG C, 2 temperature of chassis is maintained between 150 ~ 200 DEG C；After 12 electrical breakdown of silicon rod, continue energization source 8, and indirect current source
7, so that induction coil 10 is powered；In induction heating, induced current caused by turbulence field of the induction coil 10 by generation come
Heat silicon rod；By controlling 150 ~ 200 DEG C of temperature of induction coil to 10 cooling water supply of induction coil, prevent from being formed for gas
Mutually deposit the formation of unfavorable copper silicide.
The ac frequency used in above embodiments for 100 kHz, induction coil copper pipe diameter be 150mm(with a thickness of
1.27mm).
Analysis of experimental results: by calculating simulation, discovery adds the dress of induction coil with not plus compared with induction coil
It sets, during siliceous deposits, hence it is evident that reduce the temperature gradient inside silicon rod, and silicon rod maximum deposition diameter becomes larger.
Embodiment 2
The present embodiment structure is substantially the same with embodiment 1, the difference is that: there are 6 pairs of silicon rods 12 in furnace body 1, this 6 pairs
Silicon rod 12 close to 1 edge of furnace body circumferentially uniformly arrangement form discrete " ring ", the corresponding electrode 9 of each pair of silicon rod 12 respectively with
The series connection of the corresponding electrode 9 of another pair silicon rod 12, is finally connected with power supply 8；Chassis 2 is equipped with 6 air inlet 5 and 1 gas outlets
6.As shown in Fig. 1 ~ 3.
As another preferred embodiment: the runnability in order to guarantee equipment is equipped with multiple observation windows 4 on furnace body,
Observation window 4 is water-cooling double glass viewing mirror, is reported situations for observing in furnace body 1.
Claims (3)
1. a kind of polycrystalline silicon reducing furnace, it is characterised in that: including furnace body (1), chassis (2), electrode (9), graphite card slot (11), silicon
Stick (12), induction coil (10), furnace body (1) is fixedly connected with chassis (2) constitutes a hollow bell-jar chamber；Furnace wall and bottom
Disk (2) is double-layer structure, cooling-water duct (3) is equipped between chassis (2) and the interlayer of furnace wall, the bottom of furnace wall is correspondingly provided with
Cooling water inlet (14), top have cooling water outlet (15), and the side of chassis (2) is equipped with cooling water inlet (14) other side and is equipped with
Cooling water outlet (15)；Multipair silicon rod (12) are equipped with inside furnace body (1), each pair of silicon rod (12), which is separately connected, forms U-typed,
It is connect after being serially connected between the corresponding electrode (9) of multipair silicon rod (12) with the positive and negative anodes of power supply (8), constitutes a circulation；Bottom
Disk (2) is equipped with multiple graphite card slots (11), and graphite card slot (11) is for fixing silicon rod (12), and one end of electrode (9) is in graphite
It is connect in card slot (11) with silicon rod (12), the other end stretches out chassis (2)；Chassis (2) be equipped with more than one air inlet (5) and
More than one gas outlet (6)；Induction coil (10) is connected with AC power source (7)；And all correspondence is set outside every silicon rod (12)
There is an induction coil (10), the internal diameter of induction coil (10) is greater than the maximum growth size (13) of silicon rod；Induction coil (10)
For hollow structure, centre can lead to cooling water.
2. polycrystalline silicon reducing furnace according to claim 1, it is characterised in that: furnace body (1) is equipped with multiple observation windows (4), sense
Answer the material of coil (10) using copper pipe.
3. polycrystalline silicon reducing furnace according to claim 1, it is characterised in that: the diameter of induction coil (10) be 140mm ~
200mm, with a thickness of 1.2 ~ 3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821173373.9U CN208995147U (en) | 2018-07-24 | 2018-07-24 | A kind of polycrystalline silicon reducing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821173373.9U CN208995147U (en) | 2018-07-24 | 2018-07-24 | A kind of polycrystalline silicon reducing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208995147U true CN208995147U (en) | 2019-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201821173373.9U Expired - Fee Related CN208995147U (en) | 2018-07-24 | 2018-07-24 | A kind of polycrystalline silicon reducing furnace |
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| Country | Link |
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| CN (1) | CN208995147U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108910890A (en) * | 2018-07-24 | 2018-11-30 | 昆明理工大学 | A kind of polycrystalline silicon reducing furnace and its application method |
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2018
- 2018-07-24 CN CN201821173373.9U patent/CN208995147U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108910890A (en) * | 2018-07-24 | 2018-11-30 | 昆明理工大学 | A kind of polycrystalline silicon reducing furnace and its application method |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190618 Termination date: 20200724 |