CN208908222U - A kind of LED encapsulation structure - Google Patents
A kind of LED encapsulation structure Download PDFInfo
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- CN208908222U CN208908222U CN201821836400.6U CN201821836400U CN208908222U CN 208908222 U CN208908222 U CN 208908222U CN 201821836400 U CN201821836400 U CN 201821836400U CN 208908222 U CN208908222 U CN 208908222U
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Abstract
A kind of LED encapsulation structure provided by the utility model, the structure include: transparent substrates, encapsulation glue-line and multiple chips；Each chip is fixed on transparent substrates, and packed glue-line covering；In each chip, chip is light-emitting surface close to the face of transparent substrates, and the opposite face of light-emitting surface is electrode surface, is provided at least two electrodes on electrode surface, and at a distance of preset distance between electrode, and electrode is connected to the line layer on transparent substrates by bonding wire.Multiple chips by being set on transparent substrates by the utility model, and each chip is covered with encapsulation glue-line, so that the light-emitting surface of chip is towards substrate, and since two electrodes separated of chip are on the face opposite with light-emitting surface, it can use biggish electrode area and be connected to electrode on line layer by bonding wire, convenient for the attachment of chip, and welding difficulty substantially reduces, to the precision of substrate, stress adaptation issues it is of less demanding, can reduce the cost and production difficulty of LED encapsulation structure.
Description
Technical field
The utility model relates to LED backlight technical field more particularly to a kind of LED encapsulation structures.
Background technique
LED is as a kind of emerging solid light source, with significant energy conservation and service life advantage, is widely used to illuminate and show
Show field.
LED backlight technology is broadly divided into side entering type and straight-down negative two types, existing direct-light-type backlight use with
LED encapsulation structure based on flip-chip, due to flip-chip electrode bottom and size it is smaller, if electrode size design
It is small, after installation, the faying face of chip and substrate is small, be easy during transport by collision etc. lead to chip failure welding
Deng the big of, electrode area design, then the interval between electrode just becomes smaller, and welding difficulty of the chip on substrate will be increasingly
Greatly, the requirement to the machining accuracy of substrate, stress adaptation issues is higher, and the cost of entire encapsulating structure is caused to greatly improve,
Production difficulty is larger.
Utility model content
The utility model discloses a kind of LED encapsulation structures, can reduce the cost and production difficulty of LED encapsulation structure.
The utility model provides a kind of LED encapsulation structure, comprising: transparent substrates, encapsulation glue-line and multiple chips；
Each chip is fixed on the transparent substrates, and is covered by the encapsulation glue-line；
In each chip, the chip is light-emitting surface close to the face of the transparent substrates, and the light-emitting surface is opposite
Face be electrode surface, at least two electrodes are provided on the electrode surface, at a distance of preset distance between the electrode, and the electricity
Pole is connected to the line layer on the transparent substrates by bonding wire.
Preferably, each chip correspondence is covered with the encapsulation glue-line；
Or
The encapsulation glue-line covers the welding disking area of all chips and the line layer.
Preferably, multiple chips are fixed on the transparent substrates in parallel multiple rows of.
Preferably, the two sides of each of each row's chip chip are provided with the line on the transparent substrates
Road floor.
Preferably, in each chip, two electrodes pass through respectively the bonding wire and with the chip two sides
Two line layers be correspondingly connected with.
Preferably, in each chip, 70% or more of the electrode surface area is opaque.
Preferably, it is provided between each chip and the transparent substrates and/or on the bottom surface of the transparent substrates
Coat, the coat are photic zone or fluorescence coating.
It preferably, include fluorescent powder in the transparent substrates.
It preferably, include diffusion material in the coat and the transparent substrates.
Preferably, the encapsulation glue-line is non-transmissive layer.
Preferably, the non-transmissive layer is whole opaque glue-line or is formed to cover reflectorized material on the surface of light transmission glue
Encapsulate glue-line.
Preferably, the preset distance range between the electrode on the chip is 10-250um.
As can be seen from the above technical solutions, the utility model embodiment has the advantage that
The utility model provides a kind of LED encapsulation structure, which includes: transparent substrates, encapsulation glue-line and multiple cores
Piece；Each chip is fixed on transparent substrates, and packed glue-line covering；In each chip, chip is close to transparent substrates
Face is light-emitting surface, and the opposite face of light-emitting surface is electrode surface, is provided at least two electrodes on electrode surface, at a distance of preset between electrode
Distance, and electrode is connected to the line layer on transparent substrates by bonding wire.Multiple chips by being set to by the utility model
On photopolymer substrate, and each chip covered with encapsulation glue-line, so that the light-emitting surface of chip is towards substrate, and due to chip two
A electrode separated can use biggish electrode area for electrode and be connected to line by bonding wire on the face opposite with light-emitting surface
On the floor of road, convenient for the attachment of chip, and welding difficulty is substantially reduced, to the precision of substrate, stress adaptation issues it is of less demanding,
It can reduce the cost and production difficulty of LED encapsulation structure.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, before not making the creative labor property
It puts, can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is a kind of top view of one embodiment of LED encapsulation structure provided by the utility model；
Fig. 2 is a kind of front view of one embodiment of LED encapsulation structure provided by the utility model；
Fig. 3 is a kind of side view of one embodiment of LED encapsulation structure provided by the utility model；
Fig. 4 is a kind of front view of another embodiment of LED encapsulation structure provided by the utility model；
Fig. 5 is a kind of side view of another embodiment of LED encapsulation structure provided by the utility model；
Fig. 6 is a kind of first line layer schematic diagram of another embodiment of LED encapsulation structure provided by the utility model；
Fig. 7 is a kind of second line layer schematic diagram of another embodiment of LED encapsulation structure provided by the utility model.
Wherein, it is marked in figure as follows:
1. transparent substrates 2. encapsulate 3. chip of glue-line, 4. bonding wire, 5. line layer, 6. welding disking area, 7. high reflection light-proof material
Specific embodiment
The utility model embodiment discloses a kind of LED encapsulation structure, can reduce the cost and production of LED encapsulation structure
Difficulty.
It please refers to Fig.1 to Fig.3, a kind of one embodiment packet of the LED encapsulation structure provided in the utility model embodiment
It includes: transparent substrates 1, encapsulation glue-line 2 and multiple chips 3.
Each chip 3 is fixed on transparent substrates 1, and packed glue-line 2 covers.In each chip 3, chip 3 is close
The face of transparent substrates 1 is light-emitting surface, and the opposite face of light-emitting surface is electrode surface, is provided at least two electrodes, electrode on electrode surface
Between at a distance of preset distance, and electrode is connected to the line layer 5 on transparent substrates 1 by bonding wire 4.
In the present embodiment, encapsulation glue-line 2 is usually non-transmissive layer, can be the impermeable optical cement of high reflection (or saturating
The surface covering reflectorized material of optical cement forms non-transmissive layer), in order to make each chip 3 only towards the light-emitting surface of substrate, need
Encapsulation glue-line 2 completely covers other faces of chip.
It should be noted that chip 3 usually has multiple light-emitting surfaces in itself, the utility model embodiment is by by each core
Piece 3 is set on transparent substrates 1, and is covered each chip 3 with encapsulation glue-line 2, i.e., removes and transparent substrates 1 in chip 3
Between contact surface outside, the packed glue-line of lap is sheltered from, so that the light-emitting surface of chip 3 is towards substrate, and then chip 3
Light can be emitted through substrate.
Since (hereinafter referred to as electrode surface) is arranged on the face opposite with light-emitting surface in the electrode of chip 3, then relative to each core
For piece 3, light-emitting surface is placed in bottom and electrode surface be placed in top, and electrode surface (its have at least two electrodes, below with
Be illustrated for two electrodes) on, due to be between two electrodes it is spaced apart from each other, the preset distance between two electrodes can
To be arranged in advance according to actual needs, such as the preset distance reduced between two electrodes, then it can suitably increase the electrode of chip 3
Bonding wire area, therefore in the utility model embodiment, the preset distance range between two electrodes can be arranged in 10-250um
Between, it can use biggish electrode area and be connected to electrode on the line layer 5 of substrate by bonding wire 4, be conducive to chip 3
Attachment, can satisfy client to chip chamber away from specific demand the precision of substrate, stress are adapted to and are asked to reduce welding difficulty
That inscribes is of less demanding, can reduce the cost and production difficulty of entire LED encapsulation structure.
The above are a kind of one embodiment of LED encapsulation structure to be provided below a kind of LED to carry out more specific description
Another embodiment of encapsulating structure, please refers to Fig.1 to Fig.3, a kind of LED encapsulation structure provided by the utility model another
Embodiment, comprising: transparent substrates 1, encapsulation glue-line 2 and multiple chips 3.
Each chip 3 is fixed on transparent substrates 1, and packed glue-line 2 covers.In each chip 3, chip 3 and thoroughly
The contact surface of photopolymer substrate 1 is light-emitting surface, and the opposite face of light-emitting surface is electrode surface, is provided at least two electrodes on electrode surface, electricity
At a distance of preset distance between pole, and electrode is connected to the line layer 5 on transparent substrates 1 by bonding wire 4.
In the present embodiment, encapsulation glue-line 2 is usually non-transmissive layer, can be the impermeable optical cement of high reflection (or saturating
The surface covering reflectorized material of optical cement forms non-transmissive layer), in order to make each chip 3 only towards the light-emitting surface of substrate, need
Encapsulation glue-line 2 completely covers other faces of chip, further, in order to improve the reliability of product, specific packaging plastic
2 coverage mode of layer can be the one of which in following two:
(1) each correspondence of chip 3 is covered with an encapsulation glue-line 2.In this approach, by the area where each chip
Domain is individually coated with the impermeable optical cement of high reflection, then the outer surface of each chip 3 can correspond to an encapsulation glue-line.
(2) encapsulation glue-line 2 covers the welding disking area of all chips 3 and line layer 5.It in this approach, can be by all cores
The welding disking area of piece 3 and line layer 5 be coated in the same encapsulation glue-line 2 (for convenience of description, Fig. 1 to Fig. 3 in this way into
Explanation is presented in row), it can be further simplified the program of processing, and make entire encapsulating structure simpler compact.
It in the present embodiment, can be by multiple chips in order to enable entire LED encapsulation structure is more consolidated and is easy to encapsulate
3 are fixed on transparent substrates 1 in parallel multiple rows of, and in the two sides of transparent substrates 1 and the position between adjacent two rows of chips 3
Place is set, a line layer 5 is correspondingly arranged.And for each chip 3, two electrodes of chip 3 pass through 4 He of bonding wire respectively
It is correspondingly connected with two line layers 5 of chip by chip.It is understood that in encapsulation glue-line coverage mode above, packaging plastic
Bonding wire 4 also can be coated by layer 2 simultaneously while coating chip 3.
The above are a kind of another embodiment of LED encapsulation structure, which encapsulates LED provided by the utility model
The chip of structure preferable layout on substrate has carried out specific introduction, in order to improve the light-emitting uniformity of entire LED encapsulation structure,
A kind of another embodiment of LED encapsulation structure is provided below, please refers to Fig. 4 to Fig. 5, the embodiment include: transparent substrates 1,
Encapsulate glue-line 2 and multiple chips 3.
Each chip 3 is fixed on transparent substrates 1, and packed glue-line 2 covers.In each chip 3, chip 3 and thoroughly
The contact surface of photopolymer substrate 1 is light-emitting surface, and the opposite face of light-emitting surface is electrode surface, is provided at least two electrodes on electrode surface, electricity
At a distance of preset distance between pole, and electrode is connected to the line layer 5 on transparent substrates 1 by bonding wire 4.
Further, each correspondence of chip 3 is covered with an encapsulation glue-line 2；
Or
Encapsulation glue-line 2 covers the welding disking area of all chips 3 and line layer 5.
Further, multiple chips 3 are fixed on transparent substrates 1 in parallel multiple rows of, each row's core on transparent substrates 1
The two sides of each of piece chip are provided with a line layer 5, and in each chip 3, two electrodes pass through weldering respectively
It line 4 and is correspondingly connected with two line layers 5 of chip two sides.
Further, line layer 5 need to be made of conductive material, and the conductive material on line layer can be following
The one of which of two ways:
(1) as shown in fig. 6, it is two layers that line layer 5, which divides, bottom can be light transmission or lighttight conductive material, then
Plating (i.e. two layers in the same size, is overlapped in together) there can be the conductive material for being suitble to welding on entire bottom, this is two layers
Specific material can be selected according to actual needs, be the common knowledge of those skilled in the art, do not done specific introduction herein.
(2) as shown in fig. 7, it is two layers that line layer 5, which divides, bottom can be light transmission or lighttight conductive material, then
Certain welding disking area 6 is pre-selected on bottom, then is plated with the conductive material for being suitble to welding, this two layers specific material can
To be selected according to actual needs, it is the common knowledge of those skilled in the art, does not do specific introduction herein.
Further, in each chip 3 used by the utility model, the face opposite with light-emitting surface is non-transparent face,
I.e. electrode surface be it is non-transparent, such as can by 70% arrangement above of electrode surface area be it is opaque, remaining side and bottom surface are not
The problem of being limited, therefore bonding wire electrode influences chip light-emitting be not present.And in the present embodiment, two electrodes of chip 3 are located at
It on the same face, in order to retain enough electrode welding areas, needs to maintain a certain distance between two electrodes, such chip can be with
For flip-chip etc..Further, chip can be single colored chip.
Further, encapsulation glue-line 2 is non-transmissive layer, and non-transmissive layer is whole opaque glue-line or in light transmission glue
Surface covers reflectorized material and forms non-transmissive layer.
Further, the preset distance range between the electrode on chip 3 is 10-250um.
Further, it in order to improve the performance of entire product, can be improved by following two mode:
(a) it can be provided with coat between each chip 3 and transparent substrates 1 and/or on the bottom surface of transparent substrates 1,
Coat can be photic zone or fluorescence coating.It should be noted that coat can be pasting chip glue, attachment process can be point
Diaphragm is first made in glue, printing, spraying.When coat is photic zone, thus it is possible to vary refraction effect of the light in substrate, when
When being fluorescence coating (fluorescent powder such as is added in pasting chip glue) in coat, thus it is possible to vary the color of light.It should be noted that
In each chip 3, as a coat is arranged between fruit chip 3 and transparent substrates 1, the area of the coat is typically larger than chip
3 light-emitting surface, to reach preferably light-out effect and light-emitting uniformity.
(b) in the inside doping fluorescent powder of transparent substrates 1.
Further, in order to improve light-emitting uniformity, on the basis of with upper type (a), can coat and thoroughly
Diffusion material, preferably high-fire resistance, high light transmittance material, such as fluosite are added in photopolymer substrate 1.
It further, as shown in Figure 4 and Figure 5, can be in the preset table of transparent substrates 1 according to actual light demand out
High reflection light-proof material 7 is coated on the region of face.It is understood that in Fig. 1 into LED encapsulation structure shown in Fig. 3, thoroughly
Photopolymer substrate 1 does not coat high reflection light-proof material 7, i.e. the light demand out of the LED encapsulation structure is each side of entire substrate
Face and bottom surface, and on the basis of Fig. 1 to Fig. 3, it is opaque four sides of substrate can all to be coated into the coating high reflection
Material 7, portion bottom surface coat the material, only retain portion bottom surface as light-emitting surface (only can also coat the material four sides,
The material only can also be coated in some side, be specifically chosen in the present embodiment without limitation).Therefore, by transparent substrates
Surface carries out the coating of high reflection light-proof material 7, can satisfy the different light demand out of user.
The utility model covers each chip by the way that multiple chips are set on transparent substrates, and with encapsulation glue-line
Come, it, can be with so that the light-emitting surface of chip is towards substrate, and since two electrodes separated of chip are on the face opposite with light-emitting surface
Electrode is connected on line layer by bonding wire using biggish electrode area, convenient for the attachment of chip, and welding difficulty is significantly
Reduce, to the precision of substrate, stress adaptation issues it is of less demanding, can reduce the cost and production difficulty of LED encapsulation structure.
A kind of LED encapsulation structure provided by the utility model is described in detail above, for the one of this field
As technical staff have change in specific embodiments and applications based on the idea of the embodiment of the present invention
Place, in conclusion the content of the present specification should not be construed as a limitation of the present invention.
Claims (12)
1. a kind of LED encapsulation structure characterized by comprising transparent substrates, encapsulation glue-line and multiple chips；
Each chip is fixed on the transparent substrates, and is covered by the encapsulation glue-line；
In each chip, the chip is light-emitting surface, the opposite face of the light-emitting surface close to the face of the transparent substrates
For electrode surface, it is provided at least two electrodes on the electrode surface, at a distance of preset distance between the electrode, and the electrode is logical
Cross the line layer that bonding wire is connected on the transparent substrates.
2. LED encapsulation structure according to claim 1, which is characterized in that each chip correspondence is covered with an institute
State encapsulation glue-line；
Or
The encapsulation glue-line covers the welding disking area of all chips and the line layer.
3. LED encapsulation structure according to claim 2, which is characterized in that multiple chips are in parallel multiple rows of fixation
In on the transparent substrates.
4. LED encapsulation structure according to claim 3, which is characterized in that on the transparent substrates in each row's chip
The two sides of each chip are provided with the line layer.
5. LED encapsulation structure according to claim 4, which is characterized in that in each chip, two electrodes
It is correspondingly connected with respectively by the bonding wire and with two line layers of the chip two sides.
6. according to claim 1 to LED encapsulation structure described in 5 any one, which is characterized in that in each chip,
70% or more of the electrode surface area is opaque.
7. LED encapsulation structure according to claim 1, which is characterized in that each chip and the transparent substrates it
Between and/or the bottom surface of the transparent substrates on be provided with coat, the coat is photic zone or fluorescence coating.
8. LED encapsulation structure according to claim 6, which is characterized in that include fluorescent powder in the transparent substrates.
9. LED encapsulation structure according to claim 7, which is characterized in that packet in the coat and the transparent substrates
Containing diffusion material.
10. LED encapsulation structure according to claim 1 or 2, which is characterized in that the encapsulation glue-line is non-transmissive layer.
11. LED encapsulation structure according to claim 10, which is characterized in that the non-transmissive layer is whole impermeable optical cement
Layer forms encapsulation glue-line to cover reflectorized material on the surface of light transmission glue.
12. LED encapsulation structure according to claim 1, which is characterized in that between the electrode on the chip it is preset away from
It is 10-250um from range.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821836400.6U CN208908222U (en) | 2018-11-08 | 2018-11-08 | A kind of LED encapsulation structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821836400.6U CN208908222U (en) | 2018-11-08 | 2018-11-08 | A kind of LED encapsulation structure |
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| CN208908222U true CN208908222U (en) | 2019-05-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310126A (en) * | 2020-10-30 | 2021-02-02 | 维沃移动通信有限公司 | Optical distance sensing module, processing method thereof and electronic equipment |
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2018
- 2018-11-08 CN CN201821836400.6U patent/CN208908222U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310126A (en) * | 2020-10-30 | 2021-02-02 | 维沃移动通信有限公司 | Optical distance sensing module, processing method thereof and electronic equipment |
| CN112310126B (en) * | 2020-10-30 | 2023-10-27 | 维沃移动通信有限公司 | Optical distance sensing module, processing method thereof and electronic equipment |
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