CN206477057U - A kind of high-purity polysilicon ingot crucible - Google Patents
A kind of high-purity polysilicon ingot crucible Download PDFInfo
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- CN206477057U CN206477057U CN201621483257.8U CN201621483257U CN206477057U CN 206477057 U CN206477057 U CN 206477057U CN 201621483257 U CN201621483257 U CN 201621483257U CN 206477057 U CN206477057 U CN 206477057U
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- crucible
- silica crucible
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- purity polysilicon
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Abstract
The utility model discloses a kind of high-purity polysilicon ingot crucible; it is related to crucible technique field; the utility model includes the combined type backplate mechanism for being used to protect silica crucible body; it is in-house that silica crucible body is placed on combined type backplate; protecting cover is provided with above combined type backplate mechanism; inert gas entrance and inert gas outlet are provided with protecting cover, silica crucible inner body wall is provided with barium carbonate coating；The utility model has simple in construction, carbon oxygen content is high during solving existing polycrystalline silicon ingot casting, silicon solution is prevented to be reacted with crucible, improve the service life of silica crucible, the intensity of quartzy just crucible can also be increased, hot mastication phenomenon is reduced, it is ensured that the electric property of silicon crystal, the demoulding is also helped, so as to reduce production cost advantage.
Description
Technical field
The utility model is related to crucible field, more particularly to a kind of high-purity polysilicon ingot crucible.
Background technology
Leading position of the current crystal silicon solar energy battery in occupation of photovoltaic industry.And the cost of silicon chip has accounted for single multi-
More than half of crystalline silicon cost, therefore the cost of reduction silicon chip, improve the quality of silicon chip, the development for photovoltaic industry has
Extremely important meaning.In recent years, because casting polysilicon compared with pulling of silicon single crystal has the advantage such as low cost, low energy consumption, gradually
As main photovoltaic material, its market share also increasingly increases.
But due to the use of a large amount of carbon materials such as heater, heat-insulation cage and graphite protective plate during ingot casting, introduce a large amount of
Under carbon impurity, high temperature, thermal chemical reaction occurs for graphite member and oxygen, silica crucible etc., and the gas such as CO and SiO of generation passes through interior
Portion's air-flow enters in silicon melt, is easily melt silicon absorption, so as to introduce carbon oxygen impurities, ultimately resulting in has higher carbon in polysilicon
And oxygen content, the concentration of silicon ingot oxygen is 1 × 1017/cm3~1 × 1018/cm3 in conventional foundry ingot, mainly exists with gap state and is in
Hypersaturated state.It is easy for forming Thermal donor or oxygen precipitation if oxygen concentration is too high, as complex centre or introducing complex centre
Secondary defect, cause in silicon materials minority carrier lifetime to reduce, directly influence the photoelectric transformation efficiency of solar cell.And
The carbon of high concentration can form SiC particulate in silicon melt, influence the effective rate of utilization of silicon ingot.
Also because the fusing point of silicon is higher, refining is time-consuming longer with ingot casting, at high temperature between silicon liquid and crucible for a long time
Contact will unavoidably chemically react.Because the silicon melt of melting can chemically react in high temperature environments with crucible,
Have the following disadvantages：1 pair of inner wall of quartz crucible produces erosion, reduces the resistant to elevated temperatures ability of silica crucible, 2 can cause oxygen element
And other impurity elements are dissolved in silicon liquid, are contaminated silicon liquid, the electric property of silicon crystal is influenceed；3 reactions can cause silicon ingot
Sticked together with crucible, difficulty is caused to the demoulding；4 is different from the thermal coefficient of expansion of crucible material due to silicon crystal, the silicon of adhesion
Stress is produced between ingot and crucible, causes the generation of crystal defect, or even cracks silicon ingot and crucible.
The content of the invention
In order to solve during existing polycrystalline silicon ingot casting, carbon oxygen content is high, and the silicon melt of melting is easy to crucible and reacted,
The problem of causing reduction crystal quality and damage crucible, the utility model provides a kind of high-purity polysilicon ingot crucible.
The utility model specifically uses following technical scheme to achieve these goals：
A kind of high-purity polysilicon ingot crucible, including silica crucible body, in addition to for protecting silica crucible body
Combined type backplate mechanism, it is in-house that silica crucible body is placed on combined type backplate, is set above combined type backplate mechanism
Have and inert gas entrance and inert gas outlet are provided with protecting cover, protecting cover, silica crucible inner body wall is provided with barium carbonate painting
Layer.
Barium carbonate coating can be decomposed to form barium monoxide during heating, and barium monoxide can react to form barium silicate with silica crucible again,
The small barium silicate cristobalite crystallizing layer of one layer of densification of final quartz crucible surface formation, plays a protective role to silica crucible,
The chemical reaction between silicon liquid and crucible is prevented, improves the service life of silica crucible, moreover it is possible to the intensity of the firm crucible of increase quartz,
Reduce hot mastication phenomenon, it is ensured that the electric property of silicon crystal, also help the demoulding, making the reuse of silica crucible turns into
May, so as to reduce production cost.
The setting of combined type backplate mechanism can avoid silica crucible rupture in production process from causing silicon liquid to flow out and occur
The danger that body of heater is burnt out.
The setting of inert gas entrance and inert gas outlet can change the type of flow of gas, and indifferent gas enters quartz
After crucible body, can uniformly be disperseed, can effectively by the carbon monoxide produced in casting process, carbon dioxide with
And the gas such as silicon monoxide is promptly taken away, so that above-mentioned gas are substantially reduced into the probability in melt silicon, can be effectively
The content of the nonmetallic inclusion carbon and oxygen in polycrystalline silicon ingot casting is reduced, the purity of polysilicon is improved.
Further, combined type backplate mechanism is to be provided with annular boss, protecting cover at the top of cylindrical shape, combined type backplate mechanism
Lower surface is provided with ring-type locating slot corresponding with annular boss, and the setting of ring-type locating slot and annular boss facilitates protecting cover
Positioning and installation, prevent protecting cover from misplacing.
Further, admission line is provided with described inert gas entrance, inert gas outlet goes out to be provided with outlet
The material of pipeline, admission line and outlet pipe is graphite-pipe.
Further, the combined type backplate mechanism includes bottom plate and is arranged on the side plate of bottom edge, the side plate bag
Upper plate and lower plate are included, the heat-proof quality of lower plate is better than upper plate.
The heat-proof quality of lower plate is better than upper plate, is suppressed the heat transfer of crucible inner radial, and the more conducively biography of vertical direction
Heat, can be obviously improved the effect of silicon liquid internal heat transfer, suppress the generation of lateral heat flow, improve the heat transfer system of vertical direction
Number, reduces the ratio of side heat transfer coefficient and vertical direction heat transfer coefficient, is conducive to being formed uniformly for polysilicon.
Further, the upper plate material is graphite, and the material of lower plate is zinc oxide, zirconium oxide or carborundum, lower plate
The angle of outer surface and vertical direction is 5~20 °.
Further, multiple spout holes are provided with the upper plate.
Further, the rounded structure of silica crucible body, silica crucible body includes bottom disc and side wall, institute
State excessive for arc between bottom disc and side wall.
The thickness of barium carbonate coating 1~2mm or between, arc excessively ensure that quartz crucible inner surface barium carbonate coating
Thin and thick is uniform, and it is firm that coating is pasted, and effectively extends the use time of silica crucible.
This ingot casting device greatly strengthen the heat transfer between crucible guard boards and base
Further, flexible wear pad, flexible wear pad are provided between silica crucible body and combined type backplate mechanism
Setting effectively prevent silica crucible body in combined type backplate mechanism it is mobile produce polishing scratch, long-time after can cause quartzy earthenware
Crucible body is crushed.
The beneficial effects of the utility model are as follows：
1. barium carbonate coating can be decomposed to form barium monoxide during heating, barium monoxide can react to form silicic acid with silica crucible again
Barium, the small barium silicate cristobalite crystallizing layer of one layer of densification of final quartz crucible surface formation, protection is played to silica crucible and is made
With preventing the chemical reaction between silicon liquid and crucible, improve the service life of silica crucible, moreover it is possible to the just crucible of increase quartz it is strong
Degree, reduces hot mastication phenomenon, it is ensured that the electric property of silicon crystal, also helps the demoulding, make the reuse of silica crucible
It is possibly realized, so as to reduce production cost.
2. the setting of inert gas entrance and inert gas outlet can change the type of flow of gas, can effectively by
The gases such as the carbon monoxide, carbon dioxide and the silicon monoxide that are produced in casting process are promptly taken away, so as to substantially reduce
Gas is stated into the probability in melt silicon, the nonmetallic inclusion carbon and the content of oxygen that can be effectively reduced in polycrystalline silicon ingot casting,
Improve the purity of polysilicon.
3. the heat-proof quality of lower plate is better than upper plate, it is suppressed the heat transfer of crucible inner radial, and more conducively vertical direction
Heat transfer, can be obviously improved the effect of silicon liquid internal heat transfer, suppress the generation of lateral heat flow, improve the heat transfer of vertical direction
Coefficient, reduces the ratio of side heat transfer coefficient and vertical direction heat transfer coefficient, is conducive to being formed uniformly for polysilicon.
4. arc excessively ensure that the thin and thick of quartz crucible inner surface barium carbonate coating is uniform, it is firm that coating is pasted, effectively
Extend the use time of silica crucible.
5. the setting of flexible wear pad effectively prevents silica crucible body is mobile in combined type backplate mechanism to produce polishing scratch,
Silica crucible body can be caused to crush after long-time.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model；
Fig. 2 is the structural representation of combined type backplate mechanism；
Fig. 3 is the structural representation of protecting cover；
Fig. 4 is the structural representation of silica crucible body and barium carbonate coating；
Reference：1- silica crucible bodies, 2- barium carbonate coatings, 3- protecting covers, 3-1- ring-type locating slots, 3-2- indifferent gas
Body is exported, 3-3- inert gas entrances, 4- outlet pipes, 5- admission lines, 7- combined type backplates mechanism, 7-1- bottom plates, 7-2-
Side plate, 7-2.1- upper plates, 7-2.2- lower plates, 8- spout holes, 9- annular boss, 10- flexible wear pads.
Embodiment
In order to which those skilled in the art are better understood from the utility model, below in conjunction with the accompanying drawings with following examples to this
Utility model is described in further detail.
Embodiment 1
As shown in Fig. 1 to 4, the present embodiment provides a kind of high-purity polysilicon ingot crucible, including silica crucible body 1,
Characterized in that, also including the combined type backplate mechanism 7 for being used to protect silica crucible body 1, silica crucible body 1 is placed on group
Inside box-like backplate mechanism 7, the top of combined type backplate mechanism 7, which is provided with protecting cover 3, protecting cover 3, is provided with inert gas entrance 3-3
With inert gas outlet 3-2, the inwall of silica crucible body 1 is provided with barium carbonate coating 2.
In the present embodiment, barium carbonate coating can be decomposed to form barium monoxide during heating, and barium monoxide can react with silica crucible again
Barium silicate is formed, the small barium silicate cristobalite crystallizing layer of one layer of densification of final quartz crucible surface formation rises to silica crucible
To protective effect, the chemical reaction between silicon liquid and crucible is prevented, improves the service life of silica crucible, moreover it is possible to which increase quartz is just
The intensity of crucible, reduces hot mastication phenomenon, it is ensured that the electric property of silicon crystal, also helps the demoulding, make silica crucible
Reuse is possibly realized, so as to reduce production cost.
The setting of combined type backplate mechanism can avoid silica crucible rupture in production process from causing silicon liquid to flow out and occur
The danger that body of heater is burnt out.
The setting of inert gas entrance and inert gas outlet can change the type of flow of gas, and indifferent gas enters quartz
After crucible body, can uniformly be disperseed, can effectively by the carbon monoxide produced in casting process, carbon dioxide with
And the gas such as silicon monoxide is promptly taken away, so that above-mentioned gas are substantially reduced into the probability in melt silicon, can be effectively
The content of the nonmetallic inclusion carbon and oxygen in polycrystalline silicon ingot casting is reduced, the purity of polysilicon is improved.
Embodiment 2
The present embodiment is further optimized on the basis of embodiment 1, is specifically：
Combined type backplate mechanism 7 is cylindrical shape, and the top of combined type backplate mechanism 7 is provided with annular boss 9, the following table of protecting cover 3
Face is provided with ring-type locating slot 3-1 corresponding with annular boss 9.
Admission line 5 is provided with described inert gas entrance 3-3, inert gas outlet 3-2 goes out to be provided with escape pipe
The material of road 4, admission line 5 and outlet pipe 4 is graphite-pipe.
The combined type backplate mechanism 7 includes bottom plate 7-1 and is arranged on the side plate 7-2, the side plate 7- at bottom plate 7-1 edges
2 include upper plate 7-2.1 and lower plate 7-2.2, and lower plate 7-2.2 heat-proof quality is better than upper plate 7-2.1.
The upper plate 7-2.1 materials are graphite, and lower plate 7-2.2 material is zinc oxide, zirconium oxide or carborundum, lower plate
The angle of 7-2.2 outer surfaces and vertical direction is 5~20 °.
In the present embodiment, the heat-proof quality of lower plate is better than upper plate, is suppressed the heat transfer of crucible inner radial, and is more conducive to hang down
Nogata to heat transfer, can be obviously improved the effect of silicon liquid internal heat transfer, suppress the generation of lateral heat flow, improve vertical direction
Heat transfer coefficient, reduce the ratio of side heat transfer coefficient and vertical direction heat transfer coefficient, be conducive to the equal of polysilicon
It is even to be formed.
Arc excessively ensure that the thin and thick of quartz crucible inner surface barium carbonate coating is uniform, and it is firm that coating is pasted, and effectively prolongs
The use time of silica crucible is grown.
Embodiment 3
The present embodiment is further optimized on the basis of embodiment 1, is specifically：
Multiple spout holes 8 are provided with the upper plate 7-2.1.
The rounded structure of the silica crucible body 1, silica crucible body 1 includes bottom disc and side wall, the bottom
Between disk and side wall for arc excessively, the side wall of the silica crucible body is gradually thickening from top to bottom, and side wall thickness is
The 4/5 of thinnest part.
Flexible wear pad 10 is provided between silica crucible body 1 and combined type backplate mechanism 7.
In the present embodiment, the setting of flexible wear pad effectively prevents silica crucible body from being moved in combined type backplate mechanism
Producing can cause silica crucible body to crush after polishing scratch, long-time.
It is described above, preferred embodiment only of the present utility model, not to limit the utility model, the utility model
Scope of patent protection be defined by claims, it is every with being equal that specification of the present utility model and accompanying drawing content are made
Structure change, similarly should be included in protection domain of the present utility model.
Claims (8)
1. a kind of high-purity polysilicon ingot crucible, including silica crucible body（1）, it is characterised in that also including for protecting
Silica crucible body（1）Combined type backplate mechanism（7）, silica crucible body（1）It is placed on combined type backplate mechanism（7）It is interior
Portion, combined type backplate mechanism（7）Top is provided with protecting cover（3）, protecting cover（3）On be provided with inert gas entrance（3-3）And inertia
Gas vent（3-2）, silica crucible body（1）Inwall is provided with barium carbonate coating（2）.
2. high-purity polysilicon ingot crucible according to claim 1, it is characterised in that combined type backplate mechanism（7）For
Cylindrical shape, combined type backplate mechanism（7）Top is provided with annular boss（9）, protecting cover（3）Lower surface is provided with and annular boss
（9）Corresponding ring-type locating slot（3-1）.
3. high-purity polysilicon ingot crucible according to claim 1, it is characterised in that described inert gas entrance
（3-3）Place is provided with admission line（5）, inert gas outlet（3-2）Go out to be provided with outlet pipe（4）, admission line（5）With go out
Feed channel（4）Material be graphite-pipe.
4. high-purity polysilicon ingot crucible according to claim 1, it is characterised in that the combined type backplate mechanism
（7）Including bottom plate（7-1）Be arranged on bottom plate（7-1）The side plate at edge（7-2）, the side plate（7-2）Including upper plate（7-2.1）
And lower plate（7-2.2）, lower plate（7-2.2）Heat-proof quality be better than upper plate（7-2.1）.
5. high-purity polysilicon ingot crucible according to claim 4, it is characterised in that the upper plate（7-2.1）Material
For graphite, lower plate（7-2.2）Material be zinc oxide, zirconium oxide or carborundum, lower plate（7-2.2）Outer surface and vertical direction
Angle be 5 ~ 20 °.
6. high-purity polysilicon ingot crucible according to claim 4, it is characterised in that the upper plate（7-2.1）On set
It is equipped with multiple spout holes（8）.
7. high-purity polysilicon ingot crucible according to claim 1, it is characterised in that the silica crucible body（1）
Rounded structure, silica crucible body（1）It is arc mistake including bottom disc and side wall, between the bottom disc and side wall
Degree, the side wall of the silica crucible body is gradually thickening from top to bottom, and side wall thickness is the 4/5 of thinnest part.
8. high-purity polysilicon ingot crucible according to claim 1, it is characterised in that silica crucible body（1）With group
Box-like backplate mechanism（7）Between be provided with flexible wear pad（10）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621483257.8U CN206477057U (en) | 2016-12-30 | 2016-12-30 | A kind of high-purity polysilicon ingot crucible |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621483257.8U CN206477057U (en) | 2016-12-30 | 2016-12-30 | A kind of high-purity polysilicon ingot crucible |
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| CN206477057U true CN206477057U (en) | 2017-09-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112746176A (en) * | 2020-12-29 | 2021-05-04 | 常州中钢精密锻材有限公司 | Method for controlling distribution of trace elements in ESR (equivalent series resistance) ingot |
-
2016
- 2016-12-30 CN CN201621483257.8U patent/CN206477057U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112746176A (en) * | 2020-12-29 | 2021-05-04 | 常州中钢精密锻材有限公司 | Method for controlling distribution of trace elements in ESR (equivalent series resistance) ingot |
| CN112746176B (en) * | 2020-12-29 | 2024-03-22 | 常州中钢精密锻材有限公司 | Method for controlling trace element distribution in ESR cast ingot and application thereof |
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