CN206467328U - The thermal field structure of polycrystalline silicon ingot or purifying furnace - Google Patents
The thermal field structure of polycrystalline silicon ingot or purifying furnace Download PDFInfo
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- CN206467328U CN206467328U CN201621321580.5U CN201621321580U CN206467328U CN 206467328 U CN206467328 U CN 206467328U CN 201621321580 U CN201621321580 U CN 201621321580U CN 206467328 U CN206467328 U CN 206467328U
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- heater
- crucible
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- shield
- centered cylinder
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Abstract
The utility model discloses a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, centered cylinder copper electrode and centered cylinder heater in the middle part of crucible, it is provided with the middle part of crucible in the centered cylinder heating tank of correspondence centered cylinder heater, the centrally disposed cylinder heating tank of centered cylinder heater；The side wall of graphite shield from top to bottom thickness-tapered and forms upside-down trapezoid, and the one side of the side wall correspondence crucible of graphite shield is vertically arranged and is obliquely installed parallel to the wall and lateral surface of crucible；Side heater is obliquely installed and be arranged in parallel with the lateral surface of graphite shroud wall.The utility model in the middle of crucible due to using cylinder heating and by the way that the graphite shield sidewall thickness of thermal field structure is tapered into, and side heater is obliquely installed by cooperation, the efficiency of heating surface of material at crucible inner bottom part and base angle can be effectively improved, so that the overall degree of being heated evenly for improving polysilicon crystallizes the uniformity and ingot quality to improve.
Description
Technical field
The utility model is related to polycrystalline silicon battery plate production technical field, more particularly to a kind of polycrystalline silicon ingot or purifying furnace, especially
It is a kind of upgrading of the thermal field structure of polycrystalline silicon ingot or purifying furnace.
Background technology
The production process of polycrystalline silicon battery plate includes：Crucible spraying → filler → ingot casting → cutting is blocking → line be cut into piece →
Cleaning-drying → detection → packaging, wherein, casting polycrystal silicon ingot is one of important technique, and the quality of polycrystalline silicon ingot casting will be direct
Influence the conversion efficiency and quality of solar cell.
Polycrystal silicon ingot is cast, is that the crucible after filler is placed in ingot furnace, evacuates, heat by furnace chamber, melting, growing
After brilliant, annealing, cooling, the casting of silicon ingot is completed.Add in the prior art in polycrystalline silicon ingot or purifying furnace provided with top heater and side
Hot device, top heater and side heater are set to one, are fixed by top copper electrode and body of heater, top heater and side
Heater provides heat.During the entire process of polycrystal silicon ingot casting, top heater and side heater are by heat radiation
Mode to the outside silicon material heating in crucible, and the heating of the middle part silicon material in crucible then passes through the heat of outside silicon material completely
Transmit to complete, accordingly, there exist problems with：
1. because top heater and side heater heat the outside silicon material in crucible by way of heat radiation,
Middle part silicon material in crucible can not be heated, so the heating of the middle part silicon material in crucible passes through outside silicon in crucible completely
The heat transfer of material is realized, and the temperature difference of the outside silicon material and middle part silicon material in crucible is very big, to make the temperature of silicon material in crucible
Degree reaches that the uniform required time is just very long, so as to waste electric energy.
2. during length is brilliant, because the outside temperature difference is big in silicon material, the silicon material of fusing annularly flow can occur because of the temperature difference,
The temperature difference is bigger, and annularly flow is bigger, can cause the destruction to crystal grain when long brilliant, influence Ingot quality；
3. the graphite shield thickness of thermal field structure always, because crucible top is provided with corresponding graphite shield but bottom does not have
Have, therefore it is uneven to cause in crucible to be heated above and below material, so as to influence the crystallization uniformity and ingot quality.
In view of this, how improvement is made to polycrystalline silicon ingot or purifying furnace of the prior art, to improve the matter of polycrystalline silicon ingot casting
Amount, and energy consumption is reduced, it is current those skilled in the art's technical issues that need to address.
Utility model content
In order to solve the above technical problems, the utility model provides a kind of polycrystalline silicon ingot casting with more efficient thermal field structure
Stove, to realize the high-efficiency heating of silicon material in ingot furnace crucible to improve the efficiency of heating surface and reduce energy consumption.
To reach above-mentioned purpose, the technical solution of the utility model is as follows：
A kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, the ingot furnace includes：Pumping is provided with body of heater, the body of heater
Be provided with hole, the body of heater be provided with heat-preservation guard shield, the heat-preservation guard shield crucible, the graphite shield of the correspondence crucible,
The top heater and side heater and the cooling platform positioned at the graphite shield bottom of the correspondence graphite shield, institute
Top heater is stated to be controlled to realize to graphite by the external heat copper electrode at the top of the body of heater with side heater
At the top of shield and sidepiece external heat, the heat-preservation guard shield and cooling platform are by being arranged on the graphite branch of the bottom of furnace body
Post is supported, and the cooling platform supports the graphite shield, crucible described in the backplanes support of the graphite shield；The thermal field
Structure also includes the centered cylinder copper electrode and centered cylinder heater in the middle part of the correspondence crucible, and the middle part of the crucible is set
There is the centered cylinder heating tank of the correspondence centered cylinder heater, the centered cylinder heater is arranged on the centered cylinder
In heating tank；Wherein, the side wall of the graphite shield of the thermal field structure uses trapezium structure, i.e., the side wall of described graphite shield by
Up to descend thickness-tapered and form upside-down trapezoid, and the one side of the side wall correspondence crucible of the graphite shield is vertically arranged
And parallel to the wall of the crucible, the side-wall outer side face of the graphite shield is obliquely installed；The correspondence graphite shroud wall
The side heater of lateral surface is obliquely installed and be arranged in parallel with the lateral surface of the graphite shroud wall；The graphite shield
The thickness of cover side wall top is twice of lowermost end thickness.
Wherein, the centered cylinder copper electrode is arranged in the aspirating hole.
Wherein, the centered cylinder heating tank is surrounded by the center drum cell wall for being arranged on the crucible center, institute
State that center drum cell wall is integrated with the bottom plate of the crucible to be cast.
In addition, the upgrading in order to coordinate thermal field structure, the utility model provides a kind of ingot furnace of counter structure
With crucible, the crucible includes bottom plate, side wall and the center drum cell wall for being located at center and being arranged on the bottom plate,
The center drum cell wall surrounds columned centered cylinder heating tank.
Thermal field structure after the polycrystalline silicon ingot or purifying furnace provided by above-mentioned technical proposal, the utility model, its upgrading
Due to introducing cylinder heating in the centre position of crucible, i.e., the quick heating of centre position silicon material can be realized, and due to cylinder
Structure setting and the generation for reducing follow-up cutting clout, greatly improve production efficiency and product qualification rate；In addition, by inciting somebody to action
The graphite shield sidewall thickness of thermal field structure is tapered into, and side heater is obliquely installed by cooperation, can effectively improve earthenware
The efficiency of heating surface of material at crucible inner bottom part and base angle, so that the overall degree of being heated evenly for improving polysilicon is uniform to improve crystallization
Degree, so as to improve ingot quality.
Brief description of the drawings
, below will be to needed for embodiment description in order to illustrate more clearly of the technical scheme in the utility model embodiment
The accompanying drawing to be used is briefly described.
Fig. 1 is the cross section structure diagram of the polycrystalline silicon ingot or purifying furnace disclosed in the utility model embodiment；
Fig. 2 is the overlooking the structure diagram of the crucible disclosed in the utility model embodiment.
Numeral is represented in figure：
11. the graphite pillar of 12. heat-preservation guard shield of body of heater 13.
14. the top heater of 15. graphite shield of cooling platform 16.
17. the aspirating hole of 18. external heat copper electrode of side heater 19.
20. the crucible of 21. centered cylinder heater of centered cylinder copper electrode 22.
23. the centered cylinder heating tank of center drum cell wall 24.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe.
With reference to Fig. 1, the utility model provides a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, and ingot furnace includes：Body of heater 11,
It is provided with body of heater 11 in aspirating hole 19, body of heater 11 and is provided with heat-preservation guard shield 12, crucible 22, correspondingly is provided with heat-preservation guard shield 12
The graphite shield 15 of crucible 22, the top heater 16 of correspondence graphite shield 15 and side heater 17 and positioned at graphite shield
The cooling platform 14 of 15 bottoms, top heater 16 is with side heater 17 by the external heat copper electricity installed in the top of body of heater 11
Pole 18 is controlled to realize the external heat to the top of graphite shield 15 and sidepiece, and heat-preservation guard shield 12 and cooling platform 14 are by setting
Supported in the graphite pillar 13 of the bottom of body of heater 11, the support graphite of cooling platform 14 shield 15, the backplanes support of graphite shield 15
Crucible 22；Thermal field structure also includes the centered cylinder copper electrode 20 and centered cylinder heater 21 at the middle part of correspondence crucible 22, center
Cylinder copper electrode 20 is arranged in aspirating hole 19；The middle part of crucible 22 is provided with the centered cylinder of correspondence centered cylinder heater 21
In heating tank 24, the centrally disposed cylinder heating tank 24 of centered cylinder heater 21.
In addition, the side wall of the graphite shield 15 of thermal field structure uses the side wall of trapezium structure, i.e. graphite shield 15 by up to
Lower thickness-tapered simultaneously forms upside-down trapezoid, and the side wall correspondence crucible 22 of graphite shield 15 one side be vertically arranged and parallel to
The wall of crucible 22, the side-wall outer side face of graphite shield 15 is obliquely installed；The sidepiece in the side-wall outer side face of correspondence graphite shield 15 adds
Hot device 17 is obliquely installed and be arranged in parallel with the lateral surface of the side wall of graphite shield 15；The thickness of the side wall top of graphite shield 15 is
Twice of lowermost end thickness.
With reference to Fig. 2, crucible 22 includes bottom plate, side wall and the center drum groove for being located at center and being arranged on bottom plate
Wall 23, center drum cell wall 23 surrounds columned centered cylinder heating tank 24, the bottom plate of center drum cell wall 23 and crucible 22
Integration is cast.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or new using this practicality
Type.A variety of modifications to these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can in other embodiments be realized in the case where not departing from spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide scope consistent with features of novelty.
Claims (4)
1. a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, the ingot furnace includes：Aspirating hole is provided with body of heater, the body of heater,
It is provided with the body of heater and crucible, the graphite shield of the correspondence crucible, correspondingly is provided with heat-preservation guard shield, the heat-preservation guard shield
The top heater and side heater and the cooling platform positioned at the graphite shield bottom of the graphite shield, the top
Portion's heater is controlled to realize to graphite shield with side heater by the external heat copper electrode at the top of the body of heater
Top and the external heat of sidepiece, the heat-preservation guard shield and cooling platform by be arranged on the graphite pillar of the bottom of furnace body come
Support, the cooling platform supports the graphite shield, crucible described in the backplanes support of the graphite shield, it is characterised in that
The thermal field structure also includes the centered cylinder copper electrode and centered cylinder heater in the middle part of the correspondence crucible, the crucible
Middle part is provided with the centered cylinder heating tank of the correspondence centered cylinder heater, and the centered cylinder heater is arranged on described
In centered cylinder heating tank；Wherein, the side wall of the graphite shield of the thermal field structure uses trapezium structure, i.e., described graphite shield
Side wall from top to bottom thickness-tapered and form upside-down trapezoid, and the one side of the side wall correspondence crucible of the graphite shield
It is vertically arranged and parallel to the wall of the crucible, the side-wall outer side face of the graphite shield is obliquely installed；The correspondence graphite
The side heater of shroud wall lateral surface is obliquely installed and be arranged in parallel with the lateral surface of the graphite shroud wall.
2. the thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the centered cylinder copper electrode
It is arranged in the aspirating hole.
3. the thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that the centered cylinder heating tank
Surrounded by the center drum cell wall for being arranged on the crucible center, the bottom plate one of the center drum cell wall and the crucible
Body is cast.
4. the thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the graphite shroud wall is most
The thickness on top is twice of lowermost end thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621321580.5U CN206467328U (en) | 2016-12-02 | 2016-12-02 | The thermal field structure of polycrystalline silicon ingot or purifying furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621321580.5U CN206467328U (en) | 2016-12-02 | 2016-12-02 | The thermal field structure of polycrystalline silicon ingot or purifying furnace |
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| Publication Number | Publication Date |
|---|---|
| CN206467328U true CN206467328U (en) | 2017-09-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621321580.5U Expired - Fee Related CN206467328U (en) | 2016-12-02 | 2016-12-02 | The thermal field structure of polycrystalline silicon ingot or purifying furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110030828A (en) * | 2019-04-23 | 2019-07-19 | 西安航空制动科技有限公司 | A kind of vaccum sensitive stove |
-
2016
- 2016-12-02 CN CN201621321580.5U patent/CN206467328U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110030828A (en) * | 2019-04-23 | 2019-07-19 | 西安航空制动科技有限公司 | A kind of vaccum sensitive stove |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170905 Termination date: 20171202 |