CN103255469A - Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer - Google Patents
Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer Download PDFInfo
- Publication number
- CN103255469A CN103255469A CN2013102167777A CN201310216777A CN103255469A CN 103255469 A CN103255469 A CN 103255469A CN 2013102167777 A CN2013102167777 A CN 2013102167777A CN 201310216777 A CN201310216777 A CN 201310216777A CN 103255469 A CN103255469 A CN 103255469A
- Authority
- CN
- China
- Prior art keywords
- graphite heater
- graphite
- sealing coat
- silicon
- carbon content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a graphite heater, a graphite electrode and a method for reducing carbon content in a silicon wafer. The graphite heater comprises a graphite heater body, and an isolation layer which is formed on the surface layer of the graphite heater body and used for isolating the graphite heater body from the outside. According to the graphite heater provided by the invention, the isolation layer formed on the surface layer of the graphite heater is capable of isolating the graphite heater from the outside, and thus capable of preventing carbon in the graphite heater from reacting with the outside under the condition of a high temperature. When the graphite heater, the graphite electrode and the method for reducing the carbon content in the silicon wafer provided by the invention are utilized to manufacture a single crystal silicon wafer, the content of carbon impurity in the silicon wafer can be effectively reduced, the quality of the single crystal wafer is improved, and meanwhile the production cost of an enterprise is reduced.
Description
Technical field
The present invention relates to solar cell and make the field, more specifically, relate to the method for carbon content in a kind of graphite heater, Graphite Electrodes and the reduction silicon chip.
Background technology
At present in the photovoltaic industry, the solar battery sheet made from silicon base accounts for more than 99% of all photovoltaic cells, and the silicon substrate main source is exactly polycrystalline silicon ingot casting and single crystal rod drawing, in ingot casting or single crystal rod pulling process, conventional ingot furnace and high temperature heater (HTH) and the electrod assembly in the single crystal growing furnace stove all adopt graphite material to make.
Because the silicon fusing point is higher, about about 1420 ℃, in polycrystalline ingot furnace and single crystal growing furnace, need 1500 ℃ to finish the fusing of silicon material and recrystallization process.With regard to the polycrystalline ingot casting, present single silicon ingot weight more has 1 ton the large size silicon ingot of weighing generally about 500kg, and in the whole service process of 500kg silicon ingot, temperature had at least about 30 hours in the time more than 1300 ℃ in the stove.In the crystal-pulling process, single crystal rod weight is about 130kg at present, in the whole pulling process there is more than 50 hours 1300 ℃ time the interior temperature of stove.Under the high temperature action, redox reaction takes place with quartz crucible in silicon liquid always, produces silicon monoxide gas, when silicon monoxide gas touches pyrographite well heater and electrode, the same redox reaction that takes place produces silicon carbide and CO (carbon monoxide converter) gas, and concrete reaction process is as follows:
C(s)+SiO
2(s)→SiO(g)+CO(g)……（1）
SiO(g)+2C(s)→SiC(s)+CO(g)……（2）
Reaction (1) betides silicon liquid with the place of quartz crucible contact, and reaction (2) betides the graphite heater surface.
After above-mentioned reaction finished, reaction did not stop, and carbon monoxide can continue to continue reaction with high temperature silicon liquid, forms silicon monoxide and carbon, reacts as follows:
CO(g)+Si→SiO(g)+C……（3）
At this moment, carbon can be stayed in the high temperature silicon liquid, and silicon monoxide can be proceeded above-mentioned reaction (2) and reaction (3), high-temperature time is more long like this, the well heater corrosion is more serious, carbon in the silicon liquid is more many, finally causes the interior carbon content of polycrystal silicon ingot or single crystal rod on the high side, influences the photovoltaic cell photoelectric transformation efficiency.
Summary of the invention
The present invention aims to provide the method for carbon content in a kind of graphite heater, Graphite Electrodes and the reduction silicon chip, to solve in the prior art owing to use graphite heater to make the high problem of carbon content that silicon chip brings.
For solving the problems of the technologies described above, according to an aspect of the present invention, provide a kind of graphite heater, this graphite heater comprises the graphite heater body and is arranged on the sealing coat that the graphite heater body is isolated from the outside out on the top layer of graphite heater body.
Do not constitute with the material of silicon dioxde reaction when further, sealing coat is by the boiling point that is higher than silicon in temperature.
Further, sealing coat is to be plated in electrolytic coating on the graphite heater body by the mode of electroplating.
Further, sealing coat is molybdenum layer.
Further, sealing coat wraps at the graphite heater body surface by molybdenum foil and forms.
Further, the thickness of sealing coat is 0.001mm to 2mm.
According to a further aspect in the invention, provide a kind of Graphite Electrodes, this Graphite Electrodes comprises the Graphite Electrodes body and is arranged on the sealing coat that the Graphite Electrodes body is isolated from the outside out on the top layer of Graphite Electrodes body.
In accordance with a further aspect of the present invention, a kind of method that reduces carbon content in the silicon chip is provided, and the method for carbon content may further comprise the steps in this reduction silicon chip: step S1: be provided with the sealing coat that graphite heater body and Graphite Electrodes body are isolated from the outside out on the top layer of the graphite heater body of making silicon chip and Graphite Electrodes body; Step S2: graphite heater and the Graphite Electrodes that will have sealing coat are installed in the single crystal growing furnace; Step S3: regulate the power of graphite heater, the silicon material in the quartzy crucible is heated.
Do not constitute with the material of silicon dioxde reaction when further, sealing coat is by the boiling point that is higher than silicon in temperature.
Further, sealing coat is to be plated in electrolytic coating on the graphite heater body by the mode of electroplating.
Further, sealing coat wraps at the graphite heater body surface by molybdenum foil and forms.
Further, form after the sealing coat, roughened is carried out on the molybdenum foil top layer.
Use technical scheme of the present invention, graphite heater comprises the graphite heater body and is arranged on the sealing coat that the graphite heater body is isolated from the outside out on the top layer of graphite heater body.According to graphite heater of the present invention, the sealing coat that is arranged on the graphite heater top layer can be kept apart graphite heater and the external world, and then can prevent the carbon in the graphite heater and extraneous reaction under the hot conditions.When utilizing graphite heater of the present invention to make monocrystalline silicon piece, can effectively reduce the content of carbon impurity in the silicon chip, improve quality of the single crystal wafer, reduce the production cost of enterprise simultaneously.
Description of drawings
The accompanying drawing that constitutes the application's a part is used to provide further understanding of the present invention, and illustrative examples of the present invention and explanation thereof are used for explaining the present invention, do not constitute improper restriction of the present invention.In the accompanying drawings:
Fig. 1 has schematically shown the schema of the method for carbon content in the reduction silicon chip among the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated, but the multitude of different ways that the present invention can be defined by the claims and cover is implemented.
Single crystal growing furnace: be mainly used in the solar level silicon single crystal rod and draw, the silicon material is put into quartz crucible, be heated to more than 1500 ℃ the silicon material is melted fully, finish the single crystal rod pulling process through specific crystal pulling technique then.
Quartz crucible: quartzy material, to be made by glass sand, main component is silicon-dioxide, is used for the carrying polycrystalline silicon material, chemical property is stable.
Silicon nitride: have good chemical stability, water insoluble, except hydrofluoric acid resistant and dense NaOH do not corrode, the corrosion of the mineral acid that ability is all and some alkaline solution, molten caustic soda and salt.
Molybdenum: molybdenum is a kind of have high boiling point and dystectic refractory metal, is in the period 5 group VIB of the periodic table of elements.
Graphite heater: graphite material, under the starvation condition, its fusing point has favorable conductive, thermal conductivity more than 3000 ℃, and chemical property is stable.
According to embodiments of the invention, graphite heater comprises the graphite heater body and is arranged on the sealing coat that the graphite heater body is isolated from the outside out on the top layer of graphite heater body.According to present embodiment, the sealing coat that is arranged on the graphite heater top layer can be kept apart graphite heater and the external world, can prevent the carbon in the graphite heater and extraneous reaction under the hot conditions.When utilizing graphite heater of the present invention to make monocrystalline silicon piece, can effectively reduce the content of carbon impurity in the silicon chip, improve quality of the single crystal wafer, reduce the production cost of enterprise simultaneously.
In the present embodiment, sealing coat is not constitute with the material of silicon dioxde reaction during by the boiling point that is higher than silicon in temperature.In the making processes of monocrystalline silicon piece, want to obtain the monocrystalline silicon piece of high-quality, at first need to adopt single crystal growing furnace pulling monocrystal rod, and then cutting obtains monocrystalline silicon piece.In single crystal growing furnace, when the silicon material is melted, carbon in the graphite heater can with the generation silicon monoxide that reacts of the silicon-dioxide gas that is evaporated in the quartzy crucible, carbon in silicon monoxide and the graphite heater at high temperature reacts, generate carbon monoxide, this moment carbon monoxide will with quartzy crucible in the silicon material generation carbon that reacts, the carbon that generate this moment can be stayed in the silicon material, makes to contain carbon impurity in the monocrystalline silicon piece that obtains at last.Concrete reactional equation is as follows:
C(s)+SiO2(s)→SiO(g)+CO(g)……（1）
SiO(g)+2C(s)→SiC(s)+CO(g)……（2）
CO(g)+Si→SiO(g)+C……（3）
At this moment, sealing coat can be isolated from the outside out graphite heater, and this sealing coat can not react with silicon-dioxide, thereby has prevented the generation of impurity carbon, has improved the quality of the silicon chip that obtains at last.Preferably, sealing coat is molybdenum layer, and the fusing point of molybdenum is more than the height of silicon; and at high temperature can not react with silicon-dioxide and carbon; can prevent the generation of reaction formula (1) (2) (3), can also protect graphite heater simultaneously, improve the work-ing life of graphite heater.Molybdenum layer is of the present invention preferred embodiment a kind of, and in other embodiments of the invention, the material that can also adopt other and molybdenum to have same or similar chemical property is done sealing coat.
According to present embodiment, sealing coat is that the mode of employing plating is plated in the electrolytic coating on the graphite heater body.At this moment, the thickness of plated film is at 0.001mm to 1mm, and for example 0.5mm adopts the mode plated film of electroplating, and can equably molybdenum be plated in the top layer of graphite heater, to the protection better effects if of graphite heater.In other embodiments, sealing coat can also adopt molybdenum foil to wrap at the graphite heater body surface to form.At this moment, the thickness of molybdenum foil preferably, forms after the sealing coat at 0.1mm to 2mm, and roughened is carried out on the top layer of molybdenum foil, makes its surface become more coarse, to improve the thermal radiation area of graphite heater.
According to another embodiment of the present invention, provide a kind of Graphite Electrodes, this Graphite Electrodes comprises the Graphite Electrodes body and is arranged on the sealing coat that the Graphite Electrodes body is isolated from the outside out on the top layer of Graphite Electrodes body.In the present embodiment, sealing coat is the same with the isolation of graphite heater, all is the molybdenum layer electroplated or the molybdenum foil on Graphite Electrodes of parcel, and its thickness requirement is consistent with graphite heater also.In the process of making single-chip, the Graphite Electrodes of present embodiment can effectively reduce the content of carbon impurity in the silicon chip, improves quality of the single crystal wafer, reduces the production cost of enterprise simultaneously.
According to an embodiment more of the present invention, a kind of method that reduces carbon content in the silicon chip is provided, specifically may further comprise the steps:
Referring to shown in Figure 1, at first carry out step S1: be provided with the sealing coat that graphite heater body and Graphite Electrodes body are isolated from the outside out on the top layer of the graphite heater body of making silicon chip and Graphite Electrodes body; Carry out step S2 again: graphite heater and the Graphite Electrodes that will have sealing coat are installed in the single crystal growing furnace; Single crystal growing furnace is cleaned, the silicon material of packing in the quartzy crucible in the single crystal growing furnace is found time the air in the single crystal growing furnace again.Carry out step S3 then: regulate the power of graphite heater, the silicon material in the quartzy crucible is heated.In the present embodiment, the silicon-dioxide that the quartzy crucible evaporation that will make monocrystalline silicon piece is set of sealing coat and graphite heater and Graphite Electrodes are kept apart, prevent that carbon and silicon-dioxide gas in graphite heater and the Graphite Electrodes from reacting, and then avoided the chemical equation (2) mentioned in the previous embodiment and the generation of (3), finally reduced the content of carbon in the monocrystalline silicon piece.
Do not constitute with the material of silicon dioxde reaction when in the present embodiment, sealing coat is by the boiling point that is higher than silicon in temperature.Sealing coat can be isolated from the outside out graphite heater, and this sealing coat can not react with silicon-dioxide, thereby has prevented the generation of impurity carbon, has improved the quality of the silicon chip that obtains at last.Preferably, sealing coat is molybdenum layer, and the fusing point of molybdenum is more than the height of silicon; and at high temperature can not react with silicon-dioxide and carbon; can prevent the generation of reaction formula (1) (2) (3), can also protect graphite heater simultaneously, improve the work-ing life of graphite heater.Molybdenum layer is a kind of preferred embodiment of the present invention, and in other embodiments of the invention, the material that can also adopt other and molybdenum to have same or similar chemical property is done sealing coat.
According to present embodiment, sealing coat is to be plated in electrolytic coating on the graphite heater body by the mode of electroplating.At this moment, the thickness of plated film is at 0.001mm to 1mm, and for example 0.5mm adopts the mode plated film of electroplating, and can equably molybdenum be plated in the top layer of graphite heater, to the protection better effects if of graphite heater.In other embodiments, sealing coat can also adopt molybdenum foil to wrap at the graphite heater body surface to form.At this moment, the thickness of molybdenum foil preferably, forms after the sealing coat at 0.1mm to 2mm, and roughened is carried out on the surface of molybdenum foil, makes its surface become more coarse, to improve the thermal radiation area of graphite heater.
Treat silicon material in the quartzy crucible all after the fusing, the silicon material in the single crystal growing furnace is carried out stabilization, seeding, isometrical, ending, blowing out and slicing treatment, obtain the lower silicon chip of carbon content at last.
From above description, as can be seen, the above embodiments of the present invention have realized following technique effect: utilize the graphite heater and the Graphite Electrodes that have sealing coat to make monocrystalline silicon piece, can effectively reduce the content of carbon impurity in the silicon chip, improve quality of the single crystal wafer, in addition, can also improve the work-ing life of Graphite Electrodes and graphite heater, reduce the production cost of enterprise.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within the isolation range of the present invention.
Claims (12)
1. a graphite heater is characterized in that, comprises graphite heater body and the sealing coat that described graphite heater body is isolated from the outside out that is arranged on the top layer of described graphite heater body.
2. graphite heater according to claim 1 is characterized in that, described sealing coat does not constitute with the material of silicon dioxde reaction during by the boiling point that is higher than silicon in temperature.
3. graphite heater according to claim 1 and 2 is characterized in that, described sealing coat is to be plated in electrolytic coating on the described graphite heater body by the mode of electroplating.
4. graphite heater according to claim 3 is characterized in that, described sealing coat is molybdenum layer.
5. graphite heater according to claim 1 and 2 is characterized in that, described sealing coat wraps at described graphite heater body surface by molybdenum foil and forms.
6. graphite heater according to claim 1 and 2 is characterized in that, the thickness of described sealing coat is 0.001mm to 2mm.
7. a Graphite Electrodes is characterized in that, comprises Graphite Electrodes body and the sealing coat that described Graphite Electrodes body is isolated from the outside out that is arranged on the top layer of described Graphite Electrodes body.
8. a method that reduces carbon content in the silicon chip is characterized in that, may further comprise the steps:
Step S1: be provided with the sealing coat that described graphite heater body and described Graphite Electrodes body are isolated from the outside out on the top layer of the graphite heater body of making silicon chip and Graphite Electrodes body;
Step S2: graphite heater and the Graphite Electrodes that will have described sealing coat are installed in the single crystal growing furnace;
Step S3: regulate the power of described graphite heater, the silicon material in the quartzy crucible is heated.
9. the method for carbon content in the reduction silicon chip according to claim 8 is characterized in that, described sealing coat does not constitute with the material of silicon dioxde reaction during by the boiling point that is higher than silicon in temperature.
10. the method for carbon content according to Claim 8 or in the 9 described reduction silicon chips is characterized in that, described sealing coat is to be plated in electrolytic coating on the described graphite heater body by the mode of electroplating.
11. the method for carbon content is characterized in that according to Claim 8 or in the 9 described reduction silicon chips, described sealing coat wraps at described graphite heater body surface by molybdenum foil and forms.
12. the method for carbon content is characterized in that in the reduction silicon chip according to claim 11, forms after the described sealing coat, and roughened is carried out on described molybdenum foil top layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102167777A CN103255469A (en) | 2013-06-03 | 2013-06-03 | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102167777A CN103255469A (en) | 2013-06-03 | 2013-06-03 | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103255469A true CN103255469A (en) | 2013-08-21 |
Family
ID=48959666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102167777A Pending CN103255469A (en) | 2013-06-03 | 2013-06-03 | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103255469A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103556222A (en) * | 2013-11-13 | 2014-02-05 | 英利集团有限公司 | Graphite heater and preparation method thereof |
| CN105112995A (en) * | 2015-08-19 | 2015-12-02 | 常州天合光能有限公司 | Compound separated carbon coating used for polysilicon ingot furnace, preparation method, graphite plate and polysilicon ingot furnace |
| CN109023506A (en) * | 2018-06-29 | 2018-12-18 | 天津中环领先材料技术有限公司 | A kind of preheating device reducing zone melting single-crystal carbon content |
| CN110055582A (en) * | 2018-01-19 | 2019-07-26 | 环球晶圆日本股份有限公司 | The preparation method of monocrystalline silicon |
| CN110714222A (en) * | 2019-11-06 | 2020-01-21 | 西安奕斯伟硅片技术有限公司 | Controllable side exhaust apparatus of flow and have device's crystal pulling stove |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332601A (en) * | 1992-12-10 | 1994-07-26 | The United States As Represented By The United States Department Of Energy | Method of fabricating silicon carbide coatings on graphite surfaces |
| CN1968551A (en) * | 2005-11-16 | 2007-05-23 | 鞍钢股份有限公司 | Protective layer treatment process and apparatus for reducing graphite electrode loss |
| CN201447515U (en) * | 2009-04-20 | 2010-05-05 | 潘燕萍 | Single crystal furnace device |
| CN102409405A (en) * | 2011-08-23 | 2012-04-11 | 周浪 | Carbon contamination-preventing coating of carbon material for polysilicon ingot furnace and preparation process thereof |
| CN202415729U (en) * | 2011-12-21 | 2012-09-05 | 卉欣光电科技（江苏）有限公司 | Furnace chamber structure of monocrystalline silicon manufacturing device |
| CN102653880A (en) * | 2012-04-20 | 2012-09-05 | 镇江环太硅科技有限公司 | Casting device |
-
2013
- 2013-06-03 CN CN2013102167777A patent/CN103255469A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332601A (en) * | 1992-12-10 | 1994-07-26 | The United States As Represented By The United States Department Of Energy | Method of fabricating silicon carbide coatings on graphite surfaces |
| CN1968551A (en) * | 2005-11-16 | 2007-05-23 | 鞍钢股份有限公司 | Protective layer treatment process and apparatus for reducing graphite electrode loss |
| CN201447515U (en) * | 2009-04-20 | 2010-05-05 | 潘燕萍 | Single crystal furnace device |
| CN102409405A (en) * | 2011-08-23 | 2012-04-11 | 周浪 | Carbon contamination-preventing coating of carbon material for polysilicon ingot furnace and preparation process thereof |
| CN202415729U (en) * | 2011-12-21 | 2012-09-05 | 卉欣光电科技（江苏）有限公司 | Furnace chamber structure of monocrystalline silicon manufacturing device |
| CN102653880A (en) * | 2012-04-20 | 2012-09-05 | 镇江环太硅科技有限公司 | Casting device |
Non-Patent Citations (1)
| Title |
|---|
| 王秀峰 伍媛婷: "《微电子材料与器件制备技术》", 31 May 2008, article "微电子材料与器件制备技术", pages: 35-37 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103556222A (en) * | 2013-11-13 | 2014-02-05 | 英利集团有限公司 | Graphite heater and preparation method thereof |
| CN105112995A (en) * | 2015-08-19 | 2015-12-02 | 常州天合光能有限公司 | Compound separated carbon coating used for polysilicon ingot furnace, preparation method, graphite plate and polysilicon ingot furnace |
| CN110055582A (en) * | 2018-01-19 | 2019-07-26 | 环球晶圆日本股份有限公司 | The preparation method of monocrystalline silicon |
| CN110055582B (en) * | 2018-01-19 | 2021-07-16 | 环球晶圆日本股份有限公司 | Method for producing single crystal silicon |
| CN109023506A (en) * | 2018-06-29 | 2018-12-18 | 天津中环领先材料技术有限公司 | A kind of preheating device reducing zone melting single-crystal carbon content |
| CN110714222A (en) * | 2019-11-06 | 2020-01-21 | 西安奕斯伟硅片技术有限公司 | Controllable side exhaust apparatus of flow and have device's crystal pulling stove |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101122047B (en) | Method for manufacturing polycrystalline silicon used for solar battery | |
| CN103255469A (en) | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer | |
| CN102041550A (en) | Method for prolonging service life of single crystal furnace thermal field crucible, and Czochralski crystal growing furnace | |
| CN102586856B (en) | Crucible capable of improving utilization rate of silicon ingot and using frequency of seed crystal and preparation method of crucible | |
| KR20090024802A (en) | Device and method for production of semiconductor grade silicon | |
| CN105129804A (en) | Production technology for polycrystalline silicon | |
| CN108315820A (en) | A method of producing pulling of crystals silicon rod using doped monocrystalline silicon reclaimed materials | |
| CN101597787A (en) | Under nitrogen, cast the method for the controlled doped monocrystalline silicon of nitrogen concentration | |
| CN101597788B (en) | Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen | |
| CN208501149U (en) | A kind of crucible | |
| CN201634792U (en) | Straight-pull single crystal furnace | |
| TW201816202A (en) | Heat shield of crystal seed growth crucible and method thereof | |
| CN101555010A (en) | Carborundum | |
| JP4772670B2 (en) | Carbon cylindrical container and silicon manufacturing method | |
| CN114540951B (en) | Method for preparing polycrystalline silicon ingot by recycling silicon mud | |
| CN101591806A (en) | The preparation method of solar energy Phi 6 inches dislocation-free single crystal silicon | |
| CN2884103Y (en) | Quartz crucible for vertical pulling method for prodn. of monocrystalline silicon | |
| CN109354023A (en) | A kind of the monosilane thermal decomposition furnace and production technology of bilayer cooling jacket | |
| CN101597792A (en) | Under nitrogen, cast the method for the controlled doped polysilicon of nitrogen concentration | |
| CN103320848B (en) | A kind of polycrystalline ingot furnace | |
| CN103303925A (en) | Method for recycling the carbon-chuck for manufacture of polycrystalline silicon | |
| CN108394904A (en) | A kind of monosilane thermal decomposition furnace of truncated cone-shaped cooling jacket | |
| JP5823058B2 (en) | Method for manufacturing polysilicon | |
| CN105586636A (en) | Manufacturing technology for directional-solidification growth of polycrystalline silicon ingots used for solar cells | |
| CN102373500A (en) | Growth method for solar grade monocrystaline silicon, and equipment thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130821 |