CN205711042U - 一种碳化硅外延生长装置 - Google Patents
一种碳化硅外延生长装置 Download PDFInfo
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- CN205711042U CN205711042U CN201620357583.8U CN201620357583U CN205711042U CN 205711042 U CN205711042 U CN 205711042U CN 201620357583 U CN201620357583 U CN 201620357583U CN 205711042 U CN205711042 U CN 205711042U
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- silicon carbide
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- graphite
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 60
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 27
- 239000010439 graphite Substances 0.000 claims abstract description 27
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005188 flotation Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201620357583.8U CN205711042U (zh) | 2016-04-26 | 2016-04-26 | 一种碳化硅外延生长装置 |
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CN201620357583.8U CN205711042U (zh) | 2016-04-26 | 2016-04-26 | 一种碳化硅外延生长装置 |
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CN205711042U true CN205711042U (zh) | 2016-11-23 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105714380A (zh) * | 2016-04-26 | 2016-06-29 | 北京世纪金光半导体有限公司 | 一种碳化硅外延生长装置及方法 |
TWI664328B (zh) * | 2017-05-22 | 2019-07-01 | 鴻海精密工業股份有限公司 | 外延生長裝置及其生長外延層的方法 |
CN110331439A (zh) * | 2019-07-22 | 2019-10-15 | 杭州弘晟智能科技有限公司 | 一种用于碳化硅外延的加热装置 |
CN115613139A (zh) * | 2022-12-01 | 2023-01-17 | 浙江晶越半导体有限公司 | 用于外延生长碳化硅薄膜的化学气相沉积反应器及方法 |
-
2016
- 2016-04-26 CN CN201620357583.8U patent/CN205711042U/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105714380A (zh) * | 2016-04-26 | 2016-06-29 | 北京世纪金光半导体有限公司 | 一种碳化硅外延生长装置及方法 |
TWI664328B (zh) * | 2017-05-22 | 2019-07-01 | 鴻海精密工業股份有限公司 | 外延生長裝置及其生長外延層的方法 |
CN110331439A (zh) * | 2019-07-22 | 2019-10-15 | 杭州弘晟智能科技有限公司 | 一种用于碳化硅外延的加热装置 |
CN115613139A (zh) * | 2022-12-01 | 2023-01-17 | 浙江晶越半导体有限公司 | 用于外延生长碳化硅薄膜的化学气相沉积反应器及方法 |
CN115613139B (zh) * | 2022-12-01 | 2023-04-14 | 浙江晶越半导体有限公司 | 用于外延生长碳化硅薄膜的化学气相沉积反应器及方法 |
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Effective date of registration: 20231026 Address after: Room JZ2467, Yard 2, Junzhuang Road, Junzhuang Town, Mentougou District, Beijing, 102399 (cluster registration) Patentee after: Beijing Xingyun Lianzhong Technology Co.,Ltd. Address before: 101111 Courtyard 17, Tonghui Ganqu Road, Economic and Technological Development Zone, Tongzhou District, Beijing Patentee before: BEIJING CENTURY GOLDRAY SEMICONDUCTOR Co.,Ltd. |