CN205561900U - Power / magnetism multi -functional sensor - Google Patents
Power / magnetism multi -functional sensor Download PDFInfo
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- CN205561900U CN205561900U CN201620203096.6U CN201620203096U CN205561900U CN 205561900 U CN205561900 U CN 205561900U CN 201620203096 U CN201620203096 U CN 201620203096U CN 205561900 U CN205561900 U CN 205561900U
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Abstract
The utility model discloses a power / magnetism multi -functional sensor, this sensor is including the first cantilever beam 1 that is used for detecting applied magnetic field, with the second cantilever beam 2 that is used for detecting the applied force, and by a thin film transistor TFT1 channel equivalent resistance R1, the 2nd thin film transistor TFT2 channel equivalent resistance R2, the 3rd thin film transistor TFT3 channel equivalent resistance R3 and fourth thin film transistor TFT4 channel equivalent resistance R4 constitute a wheatstone bridge, the detection in magnetic field has been realized, the 5th thin film transistor TFT1 / channel equivalent resistance R1 /, the 6th thin film transistor TFT2 / channel equivalent resistance R2 /, the 2nd wheatstone bridge of the 7th thin film transistor TFT3 / channel equivalent resistance R3 and the 8th thin film transistor TFT4 / channel equivalent resistance R4 / component have realized the measuring of power, the utility model provides a power / magnetism multi -functional sensor is small, and is with low costs, and the degree of accuracy is high, and stability is good.
Description
Technical field
This utility model relates to sensor technical field, especially relates to a kind of power/magnetic multifunction integrated sensor.
Background technology
Along with developing rapidly of science and technology, sensor technology is extremely paid attention to, but single one physical quantity sensor can not meet the field such as commercial production, Aero-Space, in order to physical quantity variation multiple to environment detect accurately simultaneously, the sensing element of the most integrated several functions can measure multiple physical quantity simultaneously, and this kind of power/magnetic Multifunction Sensor has the advantages such as volume is little, lightweight and integrated.
Patent No. CN201420085249.2 utility model refers to a kind of temperature, humidity, air pressure integrated sensor, including a circuit board, it is provided with temperature sensor on circuit boards, humidity sensor, signal processing circuit, temperature sensor, the outfan of humidity sensor and pressure transducer is all connected with the input of signal processing circuit, signal processing circuit is integrally formed formula signal processing circuit board with circuit board, pressure transducer uses Vacuum Pressure resistance pressure transducer, humidity sensor uses platinum resistance temperature sensor, humidity sensor uses Humidity-Sensitive Capacitance Sensor, Vacuum Pressure resistance pressure transducer, platinum resistance temperature sensor, Humidity-Sensitive Capacitance Sensor is integrated in integral signal and processes on circuit board.This utility model decreases the impact of outer bound pair sensor signal, improve stability, reduce production cost, can be widely applied to numerous industries such as environmental monitoring, meteorologic survey, intelligent building, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, pipeline.
A kind of MEMS temperature humidity integrated sensor compatible with CMOS technology of disclosure of the invention of Patent No. CN201310117126.2 and manufacture method thereof.This invention provides a kind of temperature humidity integrated sensor, it includes base material, the insulating barrier being formed on base material, the bottom electrode being formed on insulating barrier, the intermediate moisture sensing layer being formed on bottom electrode and the upper electrode being formed on intermediate moisture sensing layer, and wherein bottom electrode uses the thermocouple formed by N-type polycrystalline silicon/aluminum or N-type polycrystalline silicon/p-type polysilicon to measure temperature.The humiture integrated sensor of this invention, bottom electrode uses Al and polysilicon to form thermocouple, and this is CMOS compatible technology, can circulate with CMOS simultaneously, easily manufactured.
The patent of invention of Patent No. CN201210498929.2 discloses a kind of passive and wireless epidemic disaster integrated sensor, use cantilever beam capacitive temperature sensor and interdigital capacitive humidity sensor, including the Semiconductor substrate being sequentially connected with from bottom to up, lower dielectric layer, lower metal layer, middle dielectric layer, intermediate metal layer, upper dielectric layer, and it is positioned at upper metal interconnecting wires and the humidity-sensitive material of dielectric layer upper surface.The cantilever capacitance formula temperature sensor-inductor loop of this invention and interdigital capacitor humidity sensor-inductor loop frequency dividing work, simultaneously wireless measurement temperature, humidity, can apply to temperature under closed environment or mal-condition, the measurement of two kinds of parameters of humidity and collection.This inventive sensor uses CMOS MEMS technology to prepare, and has preferable performance and relatively low cost.
The patent of invention of Patent No. CN201210451111.5 discloses a kind of temperature, pressure integrated sensor, including temperature sensor, binding circuit board, temperature sensor mounting groove, pressure element, pressure seat, pressure inlet port and wire, it is characterized in that: pressure inlet port is positioned at the lower end of pressure seat, binding circuit board is positioned at the upper end of pressure seat, the end face of pressure seat is close to by binding circuit board, temperature sensor is arranged in temperature sensor mounting groove and is close to pressure seat, the heat of measured medium is conducted to temperature sensor by pressure seat, temperature sensor is connected by wire carries out signal transmission with binding circuit board.What temperature sensor was close to by this invention is arranged on above the stainless steel seat of pressure transducer or side, obtains the temperature of medium by measuring the stainless temperature as medium heat conducting carrier.This structure is easy for installation, easy to use, provides a kind of novel temperature, pressure integrated sensor for oil, chemical industry, food, refrigerating and air conditioning industry.
Utility model content
In order to solve the problems referred to above, present inventor has performed and study with keen determination, design one and can detect power and magnetic field Multifunction Sensor simultaneously, thus complete this utility model.
Specifically, the purpose of this utility model be provide following aspect:
(1) a kind of power/magnetic Multifunction Sensor, this sensor includes:
It is used for detecting the first cantilever beam 1 of externally-applied magnetic field, and
For detecting the second cantilever beam 2 of applied force, wherein,
Described first cantilever beam 1 is silicon cantilever, including (preferably root making) four thin film transistor (TFT)s, for the first film transistor TFT1, the second thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3 and the 4th thin film transistor (TFT) TFT4, its top is free end, and preferred fabrication is magnetic material 3；And/or
Described second cantilever beam 2 is silicon cantilever, including (preferably root making) four thin film transistor (TFT)s, 5th thin film transistor (TFT) TFT1 ', the 6th thin film transistor (TFT) TFT2 ', the 7th thin film transistor (TFT) TFT3 ' and the 8th thin film transistor (TFT) TFT4 ', its top is free end, the integrated siliceous gauge block of preferred fabrication, more preferably non-magnetic material 4.
(2) according to the Multifunction Sensor described in above-mentioned 1, wherein,
Described the first film transistor TFT1 raceway groove equivalent resistance R1, the second thin film transistor (TFT) TFT2 raceway groove equivalent resistance R2, the 3rd thin film transistor (TFT) TFT3 raceway groove equivalent resistance R3With the 4th thin film transistor (TFT) TFT4 raceway groove equivalent resistance R4, the most described equivalent resistance R1, equivalent resistance R2, equivalent resistance R3With equivalent resistance R4Constitute the first Wheatstone bridge；And/or
Described 5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistance R1', the 6th thin film transistor (TFT) TFT2 ' raceway groove equivalent resistance R2', the 7th thin film transistor (TFT) TFT3 ' raceway groove equivalent resistance R3' and the 8th thin film transistor (TFT) TFT4 ' raceway groove equivalent resistance R4', the most described raceway groove equivalent resistance R1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalent resistance R4' constitute the second Wheatstone bridge.
(3) according to the Multifunction Sensor described in above-mentioned 2, wherein,
Described equivalent resistance R1With described equivalent resistance R2Series winding, forms the first output voltage Vout1；And/or
Described equivalent resistance R3With described equivalent resistance R4Series winding, forms the second output voltage Vout2；And/or
Described equivalent resistance R1' and described equivalent resistance R2' series winding, forms the 3rd output voltage Vout1′；And/or
Described equivalent resistance R3' and described equivalent resistance R4' series winding, forms the 4th output voltage Vout2′。
(4) according to the Multifunction Sensor described in above-mentioned 3, wherein, when having externally-applied magnetic field effect, because of magneticaction, described first cantilever beam bends, and described first Wheatstone bridge bridge resistance changes, described first output voltage Vout1With described second output voltage Vout2Constitute difference output, it is achieved externally-applied magnetic field is measured.
(5) according to the Multifunction Sensor described in above-mentioned 4, wherein, when having applied force to be applied to the second cantilever beam top, because of magneticaction, described second cantilever beam bends, and described second Wheatstone bridge bridge resistance changes, described 3rd output voltage Vout1' and described 4th output voltage Vout2' constituting difference output, it is achieved applied force is measured.
(6) according to the Multifunction Sensor one of above-mentioned 1 to 5 described, wherein, the first cantilever beam 1 includes silicon dioxide bottom 5, monocrystal silicon 6, silicon dioxide top layer 7 and 13, Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) grid end 11, thin film transistor (TFT) drain terminal 12 and magnetic material 3.
(7) according to the Multifunction Sensor one of above-mentioned 1 to 5 described, wherein, the second cantilever beam 2 includes silicon dioxide bottom 5, monocrystal silicon 6, silicon dioxide top layer 7 and 13, Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) grid end 11, thin film transistor (TFT) drain terminal 12 and siliceous gauge block 4.
(8) according to the Multifunction Sensor one of above-mentioned 1 to 7 described, wherein,
Described first silicon cantilever 1 and described second silicon cantilever 2 use micro-electronic machining system (MEMS) fabrication techniques, and/or
Described thin film transistor (TFT) uses complementary metal oxide silicon (CMOS) technique to make.
This utility model is had the advantage that to include:
1, this utility model makes two silicon cantilevers on the same chip, can realize the detection to power and magnetic field simultaneously, have integrated feature；
2, this utility model uses cantilever beam structure detection power/magnetic, improves the power/magnetic sensitivity of sensor；
3, this utility model is respectively adopted four thin film transistor channel equivalent resistances and constitutes two open loop Wheatstone bridge roads.The convenient resistance testing bridge single thin film transistor channel equivalent resistance of open loop bridge, thin film transistor (TFT) has from zeroing function simultaneously, the adjustment of sensor zero drift can be realized, when sensor is when without the effect of applied force or magnetic field, make its output signal of telecommunication equal to zero, improve the sensor accuracy to applied force/Magnetic testi；
4, this sensor is to make on high resistant monocrystal silicon, and volume is little, low cost, good stability.
Accompanying drawing explanation
Fig. 1 is the power according to a kind of preferred implementation of this utility model/magnetic Multifunction Sensor basic structure 3 dimensional drawing；
Fig. 2 is the structure for measurement of magnetic field, equivalent circuit the first Wheatstone bridge 1 schematic diagram；
Fig. 3 is the structure for power test, equivalent circuit the second Wheatstone bridge 2 schematic diagram；
Fig. 4 is the first silicon cantilever generalized section；
Fig. 5 is the second silicon cantilever generalized section.
Drawing reference numeral illustrates:
1-the first cantilever beam (Beam1)；
2-the second cantilever beam (Beam2)；
3-the first cantilever beam magnetic material；
The siliceous gauge block of 4-the second cantilever beam；
TFT1-the first film transistor；
TFT2-the second thin film transistor (TFT)；
TFT3-the 3rd thin film transistor (TFT)；
TFT4-the 4th thin film transistor (TFT)；
TFT1 ' the-the five thin film transistor (TFT)；
TFT2 ' the-the six thin film transistor (TFT)；
TFT3 ' the-the seven thin film transistor (TFT)；
TFT4 ' the-the eight thin film transistor (TFT)；
G1-the first film transistor gate；
G2-the second thin-film transistor gate；
G3-the three thin-film transistor gate；
G4-the four thin-film transistor gate；
G1'-the five thin-film transistor gate；
G2'-the six thin-film transistor gate；
G3'-the seven thin-film transistor gate；
G4'-the eight thin-film transistor gate；
Vout1-the first outfan；
Vout2-the second outfan；
Vout1'-the three outfan；
Vout2'-the four outfan；
VSS、VDD-the first connects power supply；
VSS′、VDD'-the second connects power supply；
R1-the first film transistor channel equivalent resistance；
R2-the second thin film transistor channel equivalent resistance；
R3-the three thin film transistor channel equivalent resistance；
R4-the four thin film transistor channel equivalent resistance；
R1'-the five thin film transistor channel equivalent resistance；
R2'-the six thin film transistor channel equivalent resistance；
R3'-the seven thin film transistor channel equivalent resistance；
R4'-the eight thin film transistor channel equivalent resistance；
5-bottom layer silicon dioxide (SiO2)；
6-monocrystal silicon (Si)；
7-top layer silicon dioxide (SiO2)；
8-Nano thin film；
9-thin film transistor (TFT) source (S)；
10-gate oxide；
11-thin film transistor (TFT) grid end (G)；
12-thin film transistor (TFT) drain terminal (D)；
13-top layer silicon dioxide (SiO2)；
14-top layer silicon dioxide (SiO2)；
15-monocrystal silicon (Si)；
16-bottom layer silicon dioxide (SiO2)。
Detailed description of the invention
Being described in detail this utility model below, feature of the present utility model and advantage will become more apparent from, clearly along with these explanations.
The most special word " exemplary " means " as example, embodiment or illustrative ".The here as any embodiment illustrated by " exemplary " should not necessarily be construed as preferred or advantageous over other embodiments.Although the various aspects of embodiment shown in the drawings, but unless otherwise indicated, it is not necessary to accompanying drawing drawn to scale.
A kind of power/magnetic the Multifunction Sensor provided according to this utility model, as it is shown in figure 1, include the first cantilever beam (Beam1) for detecting externally-applied magnetic field, and is used for detecting second cantilever beam (Beam2) of applied force.Described first cantilever beam includes the first film transistor TFT1, the second thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3, the 4th thin film transistor (TFT) TFT4 and free end, and described second cantilever beam includes the 5th thin film transistor (TFT) TFT1 ', the 6th thin film transistor (TFT) TFT2 ', the 7th thin film transistor (TFT) TFT3 ', the 8th thin film transistor (TFT) TFT4 ' and free end.
In a preferred embodiment, the root at described first cantilever beam makes the first film transistor TFT1, the second thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3 and the 4th thin film transistor (TFT) TFT4, and free end makes magnetic material；Root at described second cantilever beam makes the 5th thin film transistor (TFT) TFT1 ', the 6th thin film transistor (TFT) TFT2 ', the 7th thin film transistor (TFT) TFT3 ' and the 8th thin film transistor (TFT) TFT4 ', and free end makes non-magnetic integrated siliceous gauge block；Making two cantilever beams on the same chip, can realize the detection to power and magnetic field simultaneously, integration degree is high.
In further preferred embodiment, as shown in Figures 2 and 3, described the first film transistor TFT1 raceway groove equivalent resistance R1, the second thin film transistor (TFT) TFT2 raceway groove equivalent resistance R2, the 3rd thin film transistor (TFT) TFT3 raceway groove equivalent resistance R3With the 4th thin film transistor (TFT) TFT4 raceway groove equivalent resistance R4, described 5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistance R1', the 6th thin film transistor (TFT) TFT2 ' raceway groove equivalent resistance R2', the 7th thin film transistor (TFT) TFT3 ' raceway groove equivalent resistance R3' and the 8th thin film transistor (TFT) TFT4 ' raceway groove equivalent resistance R4′.Described equivalent resistance R1, equivalent resistance R2, equivalent resistance R3With equivalent resistance R4Constitute the first Wheatstone bridge；Described raceway groove equivalent resistance R1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalent resistance R4' constitute the second Wheatstone bridge.
The convenient resistance testing bridge single thin film transistor channel equivalent resistance of open loop bridge, thin film transistor (TFT) has from zeroing function simultaneously, the adjustment of sensor zero drift can be realized, when sensor is when without the effect of applied force or magnetic field, make its output signal of telecommunication equal to zero, improve the sensor accuracy to applied force/Magnetic testi.
In the most preferred embodiment, described equivalent resistance R1With described equivalent resistance R2Series winding, forms the first output voltage Vout1；Described equivalent resistance R3With described equivalent resistance R4Series winding, forms the second output voltage Vout2；Described equivalent resistance R1' and described equivalent resistance R2' series winding, forms the 3rd output voltage Vout1′；Described equivalent resistance R3' and described equivalent resistance R4' series winding, forms the 4th output voltage Vout2′。
When having externally-applied magnetic field effect, because of magneticaction, described first cantilever beam bends, and described first Wheatstone bridge bridge resistance changes, described first output voltage Vout1With described second output voltage Vout2Constitute difference output, it is achieved externally-applied magnetic field is measured.When having applied force to be applied to the second cantilever beam top, described second cantilever beam bends, and described second Wheatstone bridge bridge resistance changes, described 3rd output voltage Vout1' and described 4th output voltage Vout2' constituting difference output, it is achieved applied force is measured.
In a preferred embodiment, as shown in Figure 4 and Figure 5, described first cantilever beam 1 includes silicon dioxide bottom 5, monocrystal silicon 6, silicon dioxide top layer 7 and 13, Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) grid end 11, thin film transistor (TFT) drain terminal 12 and magnetic material 3.Described second cantilever beam 2 includes silicon dioxide bottom 5, monocrystal silicon 6, silicon dioxide top layer 7 and 13, Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) grid end 11, thin film transistor (TFT) drain terminal 12 and siliceous gauge block 4.
In further preferred embodiment, described first silicon cantilever 1 and described second silicon cantilever 2 use micro-electronic machining system (MEMS) fabrication techniques, and described thin film transistor (TFT) uses complementary metal oxide silicon (CMOS) technique to make.
In the most preferred embodiment, described sensor is to realize making by semiconductor packaging (MEMS) and CMOS complementary metal-oxide-semiconductor technique (CMOS) in high resistant monocrystalline substrate, use electrostatic bonding technology (Bonding), at 800-1000V voltage, under 300-400 DEG C of high temperature by two great electrostatic force in interface by sensor chip and Pyrex key and together with, and utilize pressure welding technology to be encapsulated on printed circuit board (PCB) (PCB), complete sensor characteristics finally by high accuracy magnetic field calibration system and high-precision full-automatic thrust meter to demarcate.This sensor makes on high resistant monocrystal silicon, and volume is little, low cost, good stability.
In the most preferred embodiment, described sensor production comprises the following steps that:
Step one: thickness is N-type<100>the crystal orientation twin polishing monocrystalline silicon piece of 450 μm；
Step 2: boil to emitting white cigarette with concentrated sulphuric acid, uses a large amount of deionized water rinsing, then is respectively adopted No. 1, No. 2 each cleanings of electronics cleanout fluid twice, use a large amount of deionized water rinsing after cooling, put in drier and dry；
Step 3: put into by cleaned monocrystalline silicon piece in high temperature oxidation furnace and carry out once oxidation, uses thermal oxidation technology growth SiO2Layer, oxidation furnace temperature 1180 DEG C, grow SiO2Layer thickness 650nm；
Step 4: use litho machine to carry out a photoetching, photolithography process is gluing, front baking, expose, develop, post bake, corrode and remove photoresist, and is lithographically formed thin film transistor (TFT) active area window, employing above-mentioned steps three silicon wafer cleaning method cleaning silicon chip；
Step 5: use chemical gaseous phase deposition (CVD) system growth Nano thin film, and carry out the most low-doped simultaneously；
Step 6: use litho machine to carry out secondary photoetching, photolithography process is gluing, front baking, expose, develop, post bake, corrode and remove photoresist, and is lithographically formed thin film transistor (TFT) doped p type channel layer in situ, employing above-mentioned steps three silicon wafer cleaning method cleaning silicon chip；
Step 7: silicon chip after cleaning carries out secondary oxidation, uses thermal oxidation technology growth SiO2Layer, the active area window a photoetching regrows the SiO of thickness 50nm2Layer, as gate oxide；
Step 8: use low-pressure chemical vapor deposition (LPCVD) system preparing polysilicon film；
Step 9: use litho machine to carry out third photo etching, photolithography process is gluing, front baking, expose, develop, post bake, corrode and remove photoresist, and is lithographically formed thin film transistor (TFT) polysilicon gate, simultaneously employing above-mentioned steps three silicon wafer cleaning method cleaning silicon chip；
Step 10: using ion implantation apparatus to inject P ion, Implantation Energy is 40KeV, and (such as dosage is for for 6.0 × 10 for high dose13) inject, polysilicon gate phosphorus spreads, to reduce resistance of polycrystalline silicon grid rate, simultaneously by polysilicon gate self-aligned technology, it is achieved thin film transistor (TFT) source electrode and drain impurities doping, 900 DEG C of high annealings 60 minutes；
Step 11: use litho machine to carry out four mask, photolithography process is gluing, front baking, expose, develop, post bake, corrode and remove photoresist, and is lithographically formed thin film transistor (TFT) polysilicon gate, simultaneously employing above-mentioned steps three silicon wafer cleaning method cleaning silicon chip；Wet etching is used to remove the SiO of thickness 50nm2Layer；
Step 12: pass through H2+O2Synthesis oxidizing process carries out polysilicon gate oxidation, grows SiO2Layer thickness 400nm, it is achieved polysilicon gate is protected；
Step 13: by five photoetching, etched thin film transistors source electrode, drain and gate；Front side of silicon wafer Magnetron Sputtered Al electrode, aluminum thickness of electrode 0.5 μm；
Step 14: six photoetching, anti-carves aluminum, forms source electrode, drain and gate electrode respectively；
Step 15: put into by silicon chip in vacuum high temperature furnace, carries out Alloying Treatment, time 30min at 400 DEG C, makes source electrode and drain electrode etc. form good Ohmic contact；
Step 10 six: make magnetic material at the first cantilever beam free end；
Seven: seven photoetching of step 10, photoetching silicon chip back side forms silicon cup window；
Eight: eight photoetching of step 10, dual surface lithography front side of silicon wafer forms cantilever beam structure window；
Step 10 nine: use deep etching (ICP) technology etching c-type silicon cup, discharge cantilever beam structure；
Step 2 ten: sensor chip is tentatively tested；
Step 2 11: sensor chip encapsulates；
Step 2 12: sensor is always surveyed.
Wherein, described microelectron-mechanical system of processing (MEMS, Micro-Electro-Mechanical System), refer to the technology that micrometer/nanometer material is designed, processes, manufactures, measures and is controlled, also referred to as microelectromechanical systems, micro-system, micromechanics etc., grow up on the basis of microelectric technique (semiconductor fabrication), relate to material, machinery, electronics, microelectronics, chemistry, physics's (particularly mechanics and optics), biology, medical science, information etc. multidisciplinary.Having merged the high-tech electronic mechanical devices of the fabrication techniques such as photoetching, burn into thin film, LIGA, silicon micromachined, non-silicon micromachined and precision optical machinery processing, wherein, LIGA refers to photoetching, electroforming and injection；The feature of MEMS technology can be summarized as small size, variation, the device volume prepared by MEMS technology height little, integrated；Described CMOS technology refers to complementary metal oxide silicon (Complementary Metal-Oxide-Semiconductor), wherein field-effect transistor (MOSFET) is voltage-controlled type device, it is composition cmos digital integrated circuit and the core devices of CMOS Analogous Integrated Electronic Circuits, described CMOS technology refers specifically to the complementary type MOS integrated circuit fabrication process that CMOS (Complementary Metal Oxide Semiconductor) (PMOS and NMOS tube) collectively forms, and its feature is low-power consumption.
Described LPCVD (Low Pressure Chemical Vapor Deposition), is a kind of CVD reaction being reduced to below 100Torr at pressure, is widely used in deposition doped or undoped polysilicon, silicon nitride, silicon oxide, silicide film.Owing under low pressure, molecule mean free path increases, the mass transport velocity of gaseous reactant and side-product is accelerated, so that the response speed forming deposited thin film material is accelerated, the inhomogeneities of gas distribution simultaneously can eliminate within a very short time, so the film quality of deposition is high, uniformity is good, structural intergrity is good, pin hole is few.
Described ICP refers to inductively coupled plasma, and wherein, inductively coupled plasma (ICP) lithographic technique is one of key technology in mems device processing.
Above in association with detailed description of the invention and exemplary example, this utility model is described in detail, but these explanations can not be interpreted as restriction of the present utility model.It will be appreciated by those skilled in the art that in the case of without departing from this utility model spirit and scope, can carry out technical solutions of the utility model and embodiment thereof multiple equivalencing, modify or improve, these each fall within the range of this utility model.Protection domain of the present utility model is as the criterion with claims.
Claims (8)
1. power/magnetic Multifunction Sensor, this sensor includes:
It is used for detecting first cantilever beam (1) of externally-applied magnetic field, and
It is used for detecting second cantilever beam (2) of applied force,
Described first cantilever beam (1) is silicon cantilever, including four thin film transistor (TFT)s, for the first film transistor TFT1, the second thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3 and the 4th thin film transistor (TFT) TFT4, its top is free end, is made as magnetic material (3)；With
Described second cantilever beam (2) is silicon cantilever, including four thin film transistor (TFT)s, 5th thin film transistor (TFT) TFT1 ', the 6th thin film transistor (TFT) TFT2 ', the 7th thin film transistor (TFT) TFT3 ' and the 8th thin film transistor (TFT) TFT4 ', its top is free end, makes integrated siliceous gauge block (4).
Multifunction Sensor the most according to claim 1, it is characterised in that
Described the first film transistor TFT1 raceway groove equivalent resistance R1, the second thin film transistor (TFT) TFT2 raceway groove equivalent resistance R2, the 3rd thin film transistor (TFT) TFT3 raceway groove equivalent resistance R3With the 4th thin film transistor (TFT) TFT4 raceway groove equivalent resistance R4, described equivalent resistance R1, equivalent resistance R2, equivalent resistance R3With equivalent resistance R4Constitute the first Wheatstone bridge；With
Described 5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistance R1', the 6th thin film transistor (TFT) TFT2 ' raceway groove equivalent resistance R2', the 7th thin film transistor (TFT) TFT3 ' raceway groove equivalent resistance R3' and the 8th thin film transistor (TFT) TFT4 ' raceway groove equivalent resistance R4', described raceway groove equivalent resistance R1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalent resistance R4' constitute the second Wheatstone bridge.
Multifunction Sensor the most according to claim 2, it is characterised in that
Described equivalent resistance R1With described equivalent resistance R2Series winding, forms the first output voltage Vout1；
Described equivalent resistance R3With described equivalent resistance R4Series winding, forms the second output voltage Vout2；
Described equivalent resistance R1' and described equivalent resistance R2' series winding, forms the 3rd output voltage Vout1′；With
Described equivalent resistance R3' and described equivalent resistance R4' series winding, forms the 4th output voltage Vout2′。
Multifunction Sensor the most according to claim 3, it is characterised in that when having externally-applied magnetic field effect, because of magneticaction, described first cantilever beam bends, and described first Wheatstone bridge bridge resistance changes, described first output voltage Vout1With described second output voltage Vout2Constitute difference output, it is achieved externally-applied magnetic field is measured.
Multifunction Sensor the most according to claim 4, it is characterised in that when having applied force to be applied to the second cantilever beam top, described second cantilever beam bends, and described second Wheatstone bridge bridge resistance changes, described 3rd output voltage Vout1' and described 4th output voltage Vout2' constituting difference output, it is achieved applied force is measured.
6. according to the Multifunction Sensor one of claim 1 to 5 Suo Shu, it is characterized in that, described first cantilever beam (1) includes silicon dioxide bottom (5), monocrystal silicon (6), silicon dioxide top layer (7,13), Nano thin film (8), thin film transistor (TFT) source (9), gate oxide (10), thin film transistor (TFT) grid end (11), thin film transistor (TFT) drain terminal (12) and magnetic material (3).
7. according to the Multifunction Sensor one of claim 1 to 5 Suo Shu, it is characterized in that, described second cantilever beam (2) includes silicon dioxide bottom (5), monocrystal silicon (6), silicon dioxide top layer (7,13), Nano thin film (8), thin film transistor (TFT) source (9), gate oxide (10), thin film transistor (TFT) grid end (11), thin film transistor (TFT) drain terminal (12) and siliceous gauge block (4).
8. according to the Multifunction Sensor one of claim 1 to 5 Suo Shu, it is characterised in that
Described first silicon cantilever (1) and described second silicon cantilever (2) use micro-electronic machining systems technology to make, and/or
Described thin film transistor (TFT) uses complementary metal oxide silicon technique to make.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105606158A (en) * | 2016-03-16 | 2016-05-25 | 黑龙江大学 | Force/magnetism multifunctional sensor |
| CN109449210A (en) * | 2018-09-19 | 2019-03-08 | 云谷（固安）科技有限公司 | Drive thin film transistor (TFT) and preparation method, array substrate and display device |
-
2016
- 2016-03-16 CN CN201620203096.6U patent/CN205561900U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105606158A (en) * | 2016-03-16 | 2016-05-25 | 黑龙江大学 | Force/magnetism multifunctional sensor |
| CN109449210A (en) * | 2018-09-19 | 2019-03-08 | 云谷（固安）科技有限公司 | Drive thin film transistor (TFT) and preparation method, array substrate and display device |
| CN109449210B (en) * | 2018-09-19 | 2022-06-10 | 云谷（固安）科技有限公司 | Array substrate and display device |
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