CN102798498A - Multi-range integrated pressure sensor chip - Google Patents
Multi-range integrated pressure sensor chip Download PDFInfo
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- CN102798498A CN102798498A CN2012103022696A CN201210302269A CN102798498A CN 102798498 A CN102798498 A CN 102798498A CN 2012103022696 A CN2012103022696 A CN 2012103022696A CN 201210302269 A CN201210302269 A CN 201210302269A CN 102798498 A CN102798498 A CN 102798498A
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Abstract
The invention discloses a multi-range integrated pressure sensor chip which comprises a silicon substrate, wherein two or more pressure sensors with different ranges are arranged on the silicon substrate; each pressure sensor consists of a corrosion hole, a membrane and strain resistors; the four symmetric strain resistors are respectively arranged on the upper surface of each membrane and connected with one another through conductors to form a Wheatstone bridge; the membranes are connected with the silicon substrate to form a cavity; and the corrosion holes are formed on the supporting edges of the membranes. The multi-range integrated pressure sensor chip has the characteristics of being small in size, wide in range, high in low-voltage sensitivity, small in temperature drift coefficient and compatible in manufacturing process and integrated circuit process, can be used for multipath pressure measurement in automobiles, pressure measurement of environment control and pressure measurement in the fields of aviation systems, petrochemical industries and the like, and is suitable for popularization and application.
Description
Technical field
The present invention relates generally to a kind of multirange integrated pressure sensor chip, belongs to MEMS (MEMS) field.
Background technology
Along with the development of microelectric technique, utilize the piezoresistive effect and the better elastic of semiconductor material, developed semiconductor pressure sensor with integrated circuit technology and silicon micromachining technique.Owing to have little, the in light weight and highly sensitive advantage of volume, semiconductor pressure sensor is widely used at aspects such as environment control, the vehicles, medical inspection, aviation, petrochemical industry, electric power.Semiconductor pressure sensor is divided into silicon piezoresistance type, silicon capacitance resonant formula pressure transducer by principle of work, and the former has than high measurement accuracy, lower power consumption and low-cost and occupy main flow.The general structure of silicon piezoresistance type pressure sensor mainly is made up of flexible sheet, strain resistor; Principle of work is silicon diaphragm generation deflection deformation when medium is exerted pressure; Produce stress and strain, this stress and strain changes strain resistor resistivity, i.e. piezoresistive effect.Because four strain resistors are formed the differential full-bridge of constant pressure source or constant current source power supply, the output voltage that the variation of strain resistor resistivity converts full-bridge into changes, and force value converts output voltage values into.
For silicon piezoresistance type pressure sensor, range and sensitivity are mutual restriction all the time.On structural design, for range extension need increase thickness and the area that reduces diaphragm, need reduce diaphragm thickness or increase diaphragm area in order to improve sensitivity, therefore, particularly thorny.
For silicon piezoresistance type pressure sensor, the strain resistor material is divided into diffuse si, polysilicon and polysilicon nanometer thin film, and performance is different.The diffuse si technical maturity, cost is low, highly sensitive but hot properties is not good; The polysilicon cost is low, hot properties good, but sensitivity is low than the former; Polysilicon nanometer thin film has performances such as cost is low, highly sensitive, hot properties is good.
Summary of the invention
Goal of the invention
The present invention is integrated in the pressure transducer of two or more different ranges and sensitivity on the same chip, the low weakness of sensitivity when purpose is to overcome wide range sensor measurement slight pressure.
Technical scheme
The present invention realizes through following technical scheme:
A kind of multirange integrated pressure sensor chip; It is characterized in that: comprise silicon substrate; Two or more different range pressure sensors are set on silicon substrate, are called little range sensors and wide range sensor, each sensor is made up of corrosion hole, diaphragm, strain resistor; On diaphragm, be provided with four strain resistors of symmetry mutually, four strain resistors connect into Wheatstone bridge through lead, convert pressure to voltage output; Diaphragm links to each other with silicon substrate and constitutes cavity, and the diaphragm bearing edge is provided with corrosion hole.
Two or more different range pressure sensors are set on silicon substrate.
Diaphragm is square, circle or rectangle.
Journey sensor cavity bottom is provided with overcurrent protection structure in a small amount, and is gapped between overcurrent protection structure and the diaphragm.
Overcurrent protection structure is that the cross section is leg-of-mutton polysilicon overcurrent protection structure.
Different range pressure sensors adopt identical thickness and housing depth, design different range sensorses through the length and width that change diaphragm, and what diaphragm area was little is the wide range sensor, and what diaphragm area was big is little range sensors, and cavity is made and adopted sacrificial layer technology.
Strain resistor is the heavily doped polysilicon nano thin-film.
Advantage and effect
The present invention has following advantage and beneficial effect:
A kind of multirange integrated pressure sensor chip provided by the invention is compared with existing piezoresistive pressure sensor, owing to adopt two or more different range pressure sensors, has improved low pressure sensitivity and range; Adopt polysilicon nanometer thin film can improve the sensitivity and the temperature stability of piezoresistive pressure sensor as strain resistor; Technological process is identical with single range sensors, and and ic process compatibility, easy of integrationization.
Description of drawings
Fig. 1 is a vertical view of the present invention;
Fig. 2 is a diagrammatic cross-section of the present invention;
Fig. 3 is the vertical view of a kind of structure of the present invention.
Wherein: 1, silicon substrate, 2, corrosion hole, 3, diaphragm, 4, strain resistor, 5, overcurrent protection structure, 6, little range sensors, 7, the wide range sensor, 8, cavity, 9, middle range sensors.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explanation:
The present invention is a kind of multirange integrated pressure sensor chip; Shown in Fig. 1 and Fig. 2; It is characterized in that: comprise silicon substrate 1; Same silicon substrate 1 is provided with different range pressure sensors, is called little range sensors 6 and wide range sensor 7, and each sensor is made up of corrosion hole 2, diaphragm 3, strain resistor 4; It is (as shown in Figure 1 to be provided with four symmetrical mutually strain resistors 4 at diaphragm 3 upper surfaces; Edge and center at diaphragm 3 upper surfaces are provided with two polysilicon nanometer thin film strain resistors 4 respectively); Four strain resistors connect into Wheatstone bridge (constituting differential full-bridge) through lead; Convert pressure to voltage output, be used for gaging pressure numerical value; Diaphragm 3 links to each other with silicon substrate 1 and constitutes cavity 8, and diaphragm 3 bearing edges are provided with corrosion hole 2.In the little range ability of low-pressure, each range sensors all has linear output, and measured value adopts journey sensor values in a small amount, has higher sensitivity; When pressure surpasses little range and in the wide range scope time, little range sensors output is non-linear, and the output of wide range sensor is linear, and measured value adopts linear numerical.Sensor is totally taken into account wide range and high sensitivity.
Two or more different range pressure sensors are set on silicon substrate 1; Can be provided with according to actual needs; For example: as shown in Figure 3, can be set to three different range pressure sensors: little range sensors 6, wide range sensor 7 and middle range sensors 9.
Sensor construction of the present invention can adopt the polysilicon diaphragm, and diaphragm 3 is square, circle or rectangle.
As required; Can design two or more different range sensorses; Different range pressure sensors (for example: little range sensors 6, wide range sensor 7, perhaps little range sensors 6, wide range sensor 7, and in range sensors 9) all the same identical thickness and the housing depth of promptly adopting of diaphragm thickness with housing depth, only chaffy area difference; Length and width through changing diaphragm design different range sensorses; What diaphragm area was little is wide range sensor 7, and what diaphragm area was big is little range sensors 6, and cavity 8 is made and adopted sacrificial layer technology.The Sensor Design of small size is a wide range sensor 7, and characteristics are that range is big, but sensitivity is low; Large-area Sensor Design is little range sensors 6, and characteristics are that range is little, but highly sensitive.Like this, sensor process of the present invention is identical with single range sensors technology.
Sensor of the present invention adopts sacrificial layer technology to make sensor cavity and diaphragm, and this technology and ic process compatibility have integrated easy, the characteristics that sensor bulk is little of circuit.
Through changing sensor diaphragm thickness of the present invention and diaphragm size, can design the pressure transducer of various ranges.
Design concept of the present invention: primary structure of the present invention has the pressure transducer of two or more different ranges, and each sensor is made up of silicon substrate, diaphragm, cavity, overcurrent protection structure (except the wide range sensor), corrosion hole and strain resistor.Diaphragm and overcurrent protection structure are made up of polysilicon, and cavity adopts the MEMS Surface-micromachining process, and promptly sacrificial layer technology removes silicon dioxide layer with hydrofluorite through corrosion hole and forms, and after the corrosion hole sealing, diaphragm and silicon substrate constitute closed cavity.In a small amount of journey sensor cavity bottom the cross section being set is leg-of-mutton polysilicon overcurrent protection structure.Edge and center in each sensor diaphragm respectively are provided with two polysilicon nanometer thin film strain resistors, and connect into differential full-bridge, constitute pressure measurement circuitry, and circuit adopts constant pressure source or constant current source power supply.
When pressure is done the time spent, all the sensors diaphragm all bends, and membrane strains acts on strain resistor and produces piezoresistive effect, and differential full-bridge output differential voltage signal is corresponding with force value.When pressure during in a small amount of stroke pressure transducer range scope, each sensor output and the linear magnitude of voltage of pressure, journey sensor output value is in a small amount chosen in overall output, so highly sensitive during low pressure.When pressure greater than a small amount of stroke pressure transducer range scope during less than wide range transducer range maximal value; Little range pressure sensor input/output relation is non-linear; Wide range pressure transducer input/output relation is linear, and the wide range sensor output value is chosen in output.When pressure during up to a certain value, the diaphragm of little range pressure sensor contacts with overcurrent protection structure, slows down diaphragm stress with pressure trend, guarantees that diaphragm does not rupture under the wide range pressure.Compare with the pressure transducer of single range, high sensitivity when this sensor has promptly kept low pressure has enlarged range again.
The present invention adopts the overload protection technology to solve the integrated problem of different range sensorses.Overcurrent protection structure is to constitute by having a determining deviation polysilicon strip, and this is deposited on the silicon substrate in the cavity and xsect is a triangle.Polysilicon strip and diaphragm have a fixed gap, and the overload pressure that the little then sensor in space allows is just big, and the overload capacity of the little range pressure sensor that is designed should be greater than the full scale pressure of wide range.Sensor designed overload pressure of the present invention can reach more than 2 times of wide range.The polysilicon strip that is used for overload protection is arranged at the transversal sectional of rectangle diaphragm, for the etchant solution of sacrifice layer process provides passage; Each row's interval is more smaller than the minimum length of side of little range sensors, transship like this function with reduce technology difficulty and taken into account.Another effect of overcurrent protection structure is to prevent that diaphragm and silicon substrate from sticking.
The present invention adopts sacrificial layer technology to make cavity and diaphragm, at first at wafer deposition silicon dioxide as sacrifice layer, the deposit polysilicon through the corrosion hole of making, adopts hydrofluorite to erode sacrifice layer as cavity as diaphragm then.Compare with silicon cup body process technology, this technological advantage is that size sensor is little, and technology and ic process compatibility are convenient to integrated, and the different shape diaphragm is simple for production.
The polysilicon nanometer thin film that the present invention adopts be thickness near or less than the polysilicon nanometer thin film (common polysilicon membrane general thickness is more than 200 nanometers) of 100 nanometers.Thickness is that 80～100nm polysilicon nanometer thin film is 3 * 10 in doping content
20Cm
-3Have significant tunnel piezoresistive effect when neighbouring, show the pressure drag characteristic more superior than conventional polysilicon nanometer thin film, strain factor (GF) is higher more than 20% than common polysilicon nanometer thin film; Strain factor temperature coefficient (TCGF) is littler more than one times than general thin; Temperature-coefficient of electrical resistance (TCR) is than the little one magnitude of general thin.Therefore, the strain resistor that adopts polysilicon nanometer thin film to make has highly sensitive and the little characteristics of temperature coefficient.
This multirange integrated pressure sensor of the present invention chip manufacture method is following: the employing silicon materials are substrate, utilize existing MEMS technology to process.At first adopt LPCVD deposit polysilicon and etching to form polysilicon strip as overcurrent protection structure; Adopt PECVD deposit silicon dioxide as sacrifice layer, deposit layer of silicon dioxide again is as the corrosion channel layer, and etching forms the corrosion passage; Adopt LPCVD deposit one deck polysilicon to form polysilicon cavity body structure layer, etching forms the chamber etching hole; Silicon chip is put in the hydrofluoric acid solution silicon dioxide in the rotten clean chamber, and flushing is dry to realize discharging the sacrifice layer in the cavity; Adopt LPCVD deposit polysilicon, realize the sealing of polysilicon cavity; Adopt LPCVD deposit or thermal oxidation technology to form layer of silicon dioxide, realize polycrystalline cavity and resistive isolation as insulation course; Adopt LPCVD deposition techniques polysilicon nanometer thin film, as the strain resistor layer; Adopt LPCVD deposition techniques layer of silicon dioxide as passivation layer; Make masking film with photoresist, adopt ion implantation technique, realize that the local boron of polysilicon nanometer membrane strain resistance mixes, and through the annealing activator impurity; At last, photoetching polysilicon nanometer thin film resistance lead hole, and through conventional microelectronic technique realization metal line completion chip manufacturing.
This multirange integrated pressure sensor of the present invention chip can be widely used in the pressure survey in the fields such as multichannel pressure survey in the automobile, the measurement of environment controlled pressure and air line, petrochemical industry, electric power.
Claims (7)
1. multirange integrated pressure sensor chip; It is characterized in that: comprise silicon substrate (1); Silicon substrate (1) is provided with different range pressure sensors; Be called little range sensors (6) and wide range sensor (7), each sensor is made up of corrosion hole (2), diaphragm (3), strain resistor (4); On diaphragm (3), be provided with four strain resistors (4) of symmetry mutually, four strain resistors connect into Wheatstone bridge through lead, convert pressure to voltage output; Diaphragm (3) links to each other with silicon substrate (1) and constitutes cavity (8), and diaphragm (3) bearing edge is provided with corrosion hole (2).
2. according to a kind of multirange integrated pressure sensor chip of claim 1, it is characterized in that: two or more different range pressure sensors are set on silicon substrate (1).
3. according to a kind of multirange integrated pressure sensor chip of claim 1 or 2, it is characterized in that: diaphragm (3) is square, circle or rectangle.
4. according to a kind of multirange integrated pressure sensor chip of claim 1 or 2, it is characterized in that: journey sensor cavity (8) bottom is provided with overcurrent protection structure (5) in a small amount, and is gapped between overcurrent protection structure (5) and the diaphragm (3).
5. according to a kind of multirange integrated pressure sensor chip of claim 4, it is characterized in that: overcurrent protection structure (5) is that the cross section is leg-of-mutton polysilicon overcurrent protection structure.
6. according to a kind of multirange integrated pressure sensor chip of claim 1 or 2; It is characterized in that: different range pressure sensors adopt identical thickness and housing depth; Length and width through changing diaphragm design different range sensorses; What diaphragm area was little is wide range sensor (7), and what diaphragm area was big is little range sensors (6), and cavity is made and adopted sacrificial layer technology.
7. according to a kind of multirange integrated pressure sensor chip of claim 1 or 2, it is characterized in that: strain resistor (4) is the heavily doped polysilicon nano thin-film.
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| CN103575436A (en) * | 2013-11-18 | 2014-02-12 | 山东理工大学 | Multi-range macro and micro force sensor |
| CN103645219A (en) * | 2013-11-30 | 2014-03-19 | 江苏物联网研究发展中心 | Multi-range CMOS MEMS (Complementary Metal-Oxide-Semiconductor Transistor Micro-Electromechanical System) capacitance type humidity sensor |
| CN103644985A (en) * | 2013-12-11 | 2014-03-19 | 江苏物联网研究发展中心 | Multi-measuring range CMOS MEMS capacitive pressure sensor chip |
| CN103647521A (en) * | 2013-12-11 | 2014-03-19 | 江苏物联网研究发展中心 | Multi-measuring range MEMS CMOS electrostatic comb resonator |
| CN103675041A (en) * | 2013-11-30 | 2014-03-26 | 江苏物联网研究发展中心 | Multi-range interdigital capacitive humidity sensor |
| CN105974104A (en) * | 2016-05-12 | 2016-09-28 | 南京信息工程大学 | Giant piezoresistive structure based cantilever beam biochemical sensor and production method of cantilever beam |
| CN106059101A (en) * | 2016-07-19 | 2016-10-26 | 黄绍华 | Wireless charger and charging method thereof |
| CN106168524A (en) * | 2016-08-26 | 2016-11-30 | 江苏奥尼克电气股份有限公司 | A kind of method improving pressure sensor for micro electro-mechanical system overload capacity |
| CN106201085A (en) * | 2016-07-12 | 2016-12-07 | 汕头超声显示器技术有限公司 | A kind of mechanics tablet of pinpoint accuracy |
| CN106404259A (en) * | 2015-04-17 | 2017-02-15 | 泰科思股份有限公司 | Force measuring system with dual sensor |
| CN106644195A (en) * | 2016-09-30 | 2017-05-10 | 北京航空航天大学 | High-temperature and large-range silicon-sapphire pressure sensor structure |
| CN106840469A (en) * | 2015-12-04 | 2017-06-13 | 上海新微技术研发中心有限公司 | Pressure sensor integrated with multiple gears and manufacturing method thereof |
| CN106970244A (en) * | 2017-04-18 | 2017-07-21 | 四川知微传感技术有限公司 | A kind of multiple range MEMS closed-loop accelerometers |
| CN107389230A (en) * | 2017-07-28 | 2017-11-24 | 佛山市川东磁电股份有限公司 | A kind of wide-range high-precision collection membrane capacitance formula pressure sensor in pairs and preparation method |
| CN107607250A (en) * | 2016-07-11 | 2018-01-19 | 美特科技(苏州)有限公司 | A kind of air pressure measuring equipment and air pressure method for measurement |
| CN109387348A (en) * | 2018-11-22 | 2019-02-26 | 华中科技大学 | A kind of flexibility multrirange capacitance pressure transducer, and its preparation method and application |
| CN110440962A (en) * | 2019-03-20 | 2019-11-12 | 常州天利智能控制股份有限公司 | A kind of multrirange pressure sensor and the pressure controller with it |
| CN110567632A (en) * | 2019-08-29 | 2019-12-13 | 北京自动化控制设备研究所 | Core body composite silicon piezoresistive pressure sensor |
| CN111060236A (en) * | 2018-10-17 | 2020-04-24 | 北京自动化控制设备研究所 | Silicon piezoresistive pressure sensor packaging assembly structure |
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| CN114235232A (en) * | 2021-12-16 | 2022-03-25 | 东南大学 | MEMS pressure sensor and preparation method thereof |
| CN115265854A (en) * | 2022-07-27 | 2022-11-01 | 南京高华科技股份有限公司 | Pressure sensor and preparation method thereof |
| CN110440962B (en) * | 2019-03-20 | 2024-05-14 | 常州天利智能控制股份有限公司 | Multi-range pressure sensor and pressure controller with same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88201030U (en) * | 1988-01-28 | 1988-09-07 | 复旦大学 | Overpressure-proof type pressure transducer with rectangle dual-island silicon-film structure |
| CN88211371U (en) * | 1988-01-22 | 1988-12-28 | 复旦大学 | Pressure sensor for dualisland-girder-membrane structure pressure transducer |
| CN2570793Y (en) * | 2002-08-30 | 2003-09-03 | 中国科学院上海微***与信息技术研究所 | Micro-mechanical acceleration transducer with measuring range up to 2million m/s power |
| CN1715838A (en) * | 2005-06-30 | 2006-01-04 | 西安交通大学 | Multiple sensor integrated chip |
| CN2888651Y (en) * | 2005-10-26 | 2007-04-11 | 哈尔滨市东北汽车电子工程技术研究开发中心 | Structure of high-overload resisting SOI pressure sensitive chip |
| CN102419227A (en) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | Novel micro-pressure sensor chip |
-
2012
- 2012-08-23 CN CN2012103022696A patent/CN102798498A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88211371U (en) * | 1988-01-22 | 1988-12-28 | 复旦大学 | Pressure sensor for dualisland-girder-membrane structure pressure transducer |
| CN88201030U (en) * | 1988-01-28 | 1988-09-07 | 复旦大学 | Overpressure-proof type pressure transducer with rectangle dual-island silicon-film structure |
| CN2570793Y (en) * | 2002-08-30 | 2003-09-03 | 中国科学院上海微***与信息技术研究所 | Micro-mechanical acceleration transducer with measuring range up to 2million m/s power |
| CN1715838A (en) * | 2005-06-30 | 2006-01-04 | 西安交通大学 | Multiple sensor integrated chip |
| CN2888651Y (en) * | 2005-10-26 | 2007-04-11 | 哈尔滨市东北汽车电子工程技术研究开发中心 | Structure of high-overload resisting SOI pressure sensitive chip |
| CN102419227A (en) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | Novel micro-pressure sensor chip |
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| CN103575436B (en) * | 2013-11-18 | 2015-07-08 | 山东理工大学 | Multi-range macro and micro force sensor |
| CN103575436A (en) * | 2013-11-18 | 2014-02-12 | 山东理工大学 | Multi-range macro and micro force sensor |
| CN103645219B (en) * | 2013-11-30 | 2016-11-23 | 江苏物联网研究发展中心 | Multrirange CMOS MEMS capacitive humidity sensor |
| CN103675041A (en) * | 2013-11-30 | 2014-03-26 | 江苏物联网研究发展中心 | Multi-range interdigital capacitive humidity sensor |
| CN103645219A (en) * | 2013-11-30 | 2014-03-19 | 江苏物联网研究发展中心 | Multi-range CMOS MEMS (Complementary Metal-Oxide-Semiconductor Transistor Micro-Electromechanical System) capacitance type humidity sensor |
| CN103644985A (en) * | 2013-12-11 | 2014-03-19 | 江苏物联网研究发展中心 | Multi-measuring range CMOS MEMS capacitive pressure sensor chip |
| CN103647521A (en) * | 2013-12-11 | 2014-03-19 | 江苏物联网研究发展中心 | Multi-measuring range MEMS CMOS electrostatic comb resonator |
| CN106404259A (en) * | 2015-04-17 | 2017-02-15 | 泰科思股份有限公司 | Force measuring system with dual sensor |
| CN106404259B (en) * | 2015-04-17 | 2021-07-09 | 泰科思股份有限公司 | Force measuring system with dual sensors |
| CN106840469A (en) * | 2015-12-04 | 2017-06-13 | 上海新微技术研发中心有限公司 | Pressure sensor integrated with multiple gears and manufacturing method thereof |
| CN105974104A (en) * | 2016-05-12 | 2016-09-28 | 南京信息工程大学 | Giant piezoresistive structure based cantilever beam biochemical sensor and production method of cantilever beam |
| CN105974104B (en) * | 2016-05-12 | 2017-12-15 | 南京信息工程大学 | Cantilever beam biochemical sensor and cantilever beam preparation method based on huge piezo-resistive arrangement |
| CN107607250A (en) * | 2016-07-11 | 2018-01-19 | 美特科技(苏州)有限公司 | A kind of air pressure measuring equipment and air pressure method for measurement |
| CN107607250B (en) * | 2016-07-11 | 2020-04-10 | 美特科技(苏州)有限公司 | Air pressure measuring device and air pressure measuring method |
| CN106201085A (en) * | 2016-07-12 | 2016-12-07 | 汕头超声显示器技术有限公司 | A kind of mechanics tablet of pinpoint accuracy |
| CN106059101A (en) * | 2016-07-19 | 2016-10-26 | 黄绍华 | Wireless charger and charging method thereof |
| CN106168524A (en) * | 2016-08-26 | 2016-11-30 | 江苏奥尼克电气股份有限公司 | A kind of method improving pressure sensor for micro electro-mechanical system overload capacity |
| CN106644195A (en) * | 2016-09-30 | 2017-05-10 | 北京航空航天大学 | High-temperature and large-range silicon-sapphire pressure sensor structure |
| CN106970244A (en) * | 2017-04-18 | 2017-07-21 | 四川知微传感技术有限公司 | A kind of multiple range MEMS closed-loop accelerometers |
| CN106970244B (en) * | 2017-04-18 | 2023-03-28 | 四川知微传感技术有限公司 | Multi-range MEMS closed-loop accelerometer |
| CN107389230B (en) * | 2017-07-28 | 2019-05-24 | 佛山市川东磁电股份有限公司 | A kind of wide-range high-precision collection membrane capacitance formula pressure sensor in pairs and production method |
| CN107389230A (en) * | 2017-07-28 | 2017-11-24 | 佛山市川东磁电股份有限公司 | A kind of wide-range high-precision collection membrane capacitance formula pressure sensor in pairs and preparation method |
| CN111060236A (en) * | 2018-10-17 | 2020-04-24 | 北京自动化控制设备研究所 | Silicon piezoresistive pressure sensor packaging assembly structure |
| CN109387348A (en) * | 2018-11-22 | 2019-02-26 | 华中科技大学 | A kind of flexibility multrirange capacitance pressure transducer, and its preparation method and application |
| CN110440962A (en) * | 2019-03-20 | 2019-11-12 | 常州天利智能控制股份有限公司 | A kind of multrirange pressure sensor and the pressure controller with it |
| CN110440962B (en) * | 2019-03-20 | 2024-05-14 | 常州天利智能控制股份有限公司 | Multi-range pressure sensor and pressure controller with same |
| CN110567632A (en) * | 2019-08-29 | 2019-12-13 | 北京自动化控制设备研究所 | Core body composite silicon piezoresistive pressure sensor |
| CN114061433A (en) * | 2021-09-24 | 2022-02-18 | 华中科技大学 | Breathable wearable strain sensor and preparation method and application thereof |
| CN114235232A (en) * | 2021-12-16 | 2022-03-25 | 东南大学 | MEMS pressure sensor and preparation method thereof |
| CN115265854A (en) * | 2022-07-27 | 2022-11-01 | 南京高华科技股份有限公司 | Pressure sensor and preparation method thereof |
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Application publication date: 20121128 |