CN102175287A - Measurement component of flow meter chip based on MEMS (micro electronic mechanical system) technology and manufacturing method thereof - Google Patents
Measurement component of flow meter chip based on MEMS (micro electronic mechanical system) technology and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a measurement component of a flow meter chip based on an MEMS (micro electronic mechanical system) technology, comprising a silicon base with a fluid channel, wherein a thin insulation layer with low surface viscosity and good thermal conductivity is arranged above the silicon base and the channel. The manufacturing method comprises the following steps: manufacturing a nickel (Ni) metal mask plate taking glass as a base plate; using a photo-etching machine to transform images of the channel to a silicon sheet coated with photo-etching gel; using an LPCVD (low-pressure chemical vapor deposition) technology to deposit a layer of silicon dioxide on the silicon sheet; washing the photo-etching gel on a non-channel part and the silicon dioxide deposited on a non-channel part; depositing a layer of insulation film made of a specific material; measuring the device on the insulation layer above the channel; and corroding the silicon dioxide in the channel. In the invention, the channel is arranged in the structure so as to prevent the structure from exposing a thermal electrical sensing device in a fluid; the material of the insulation layer is low in surface viscosity and good in thermal conductivity so as to ensure the accuracy of the measurement numerical value and greatly reduce the pollution of the impurity in the fluid to the flow meter.
Description
(1) technical field:
The invention belongs to MEMS system design and application, especially a kind of measurement component of the flowmeter chip based on the MEMS technology can change the thermal field of thermopair when fluid flows through thermocouple structure, produce temperature difference, can measure flow rate of fluid thus.
(2) background technology:
MEMS (Micro-Electro-Mechanical Systems) is the abbreviation of MEMS (micro electro mechanical system).MEMS is the call of the U.S., be called as micromechanics in Japan, be called as micro-system in Europe, the MEMS process technology is widely used in fields such as micro-fluidic chip and synthetic biology again at present, thereby the chip that carries out laboratory technique flow processs such as biological chemistry is integrated.
A brand-new technology field and industry have been opened up in the development of MEMS technology, and the microsensor, microactrator, micro parts, Micromechanical Optics device, vacuum microelectronic device, power electronic devices etc. that adopt the MEMS fabrication techniques all have very wide application prospect in Aeronautics and Astronautics, automobile, biomedicine, environmental monitoring, military affairs and all spectra that almost people touched.The MEMS technology is just developing into a huge industry, and just as the great variety that microelectronic industry and computer industry over nearly 20 years are brought to the mankind, MEMS is also breeding technological change that a field depth carves and the influence that human society is produced a new round.The leading products in MEMS market are that pressure transducer, accelerometer, gyroscope, ink nozzle and hard drive are first-class at present.Most of industrial observer's predictions, the sales volume of the five-year MEMS device will be the gesture that increases rapidly, the annual increment rate is about 18%, therefore to providing fabulous opportunity and stern challenge to subject development such as Mechatronic Engineering, precision optical machinery and instrument, semiconductor physicses.
MEMS is a kind of brand-new research and development field that must consider multiple physical field immixture simultaneously, and with respect to traditional machinery, their size is littler, and maximum is no more than one centimetre, even only is several microns, and its thickness is just more small.Employing is based on the material of silicon, excellent electrical properties, and the intensity of silicon materials, hardness and Young modulus and iron phase are worked as, and density and aluminium are similar, and pyroconductivity is near molybdenum and tungsten.Adopt and the similar generation technique of integrated circuit (IC), can utilize mature technology, technology in the IC production in a large number, carry out in enormous quantities, low-cost production, cost performance is increased substantially with respect to tradition " machinery " manufacturing technology.The MEMS system has comprised small machinery and power components.Little inductor of MEMS structure can be used for induction or gaging pressure, flow velocity, acceleration, temperature, pressure and other physical quantitys.A little inductor can become electric signal to environment parameter such as flow velocity, pressure, temperature inversion.We lay down a criterion for the electric signal of such inductor, and the environment parameter at inductor place just can have been measured like this.
The ultimate principle of MEMS flowmeter is very simple, a thermopair that has metering circuit just can be used as a simple flowmeter: when fluid flows through thermopair, the thermal field of thermocouple is changed, the temperature sensing device at thermopair two ends will produce temperature difference, if every thermal parameters of known fluid just can obtain corresponding with it flow velocity by the measurement to temperature difference.
Based on the flowmeter of MEMS, can be used for measurement flow rate, no matter be aspect industry, commerce or medical applications, very big application demand is arranged all.In the application example of many medical treatment, industrial aspect, the plantation from the portable aerostatic press of small scale to the plant of large scale all needs to use flowmeter.
Consider the concrete condition in the flowmeter practical application, the MEMS flowmeter that generally uses need improve in the following aspects at present:
1, metering circuit: improve metering circuit, can reduce from the error of measuring electric signal;
2, the precision of temperature sensing device: use more rational structure, material more suitably, thus reduce error between measured temperature and the actual value;
3, the structure of fluid passage: use for a long time, can make on the structures attached to flowmeter such as various fragments in the fluid, impurity, pollutant, thereby influence long-term measuring stability and serviceable life.The structure of improving the fluid passage can reduce or clear up these attachments.
Being recognized that now metering circuit uses the structure of Wheatstone bridge can obtain optimum signal, is the precision of induction installation and the problem of channel architecture design so press for improved.
(3) summary of the invention:
The objective of the invention is to design a kind of measurement component of the flowmeter chip based on the MEMS technology, it can solve the deficiencies in the prior art, has lower measuring error, higher life-span and long-term measuring stability.
Technical scheme of the present invention: a kind of measurement component of the flowmeter chip based on the MEMS technology, it is characterized in that it comprises that has the silica-based of fluid passage, there is thin, surface viscosity is low, the thermal conductivity good insulation performance layer of one deck silica-based and passage top, the insulation course top is a sensing element measurement mechanism down, and the insulation course upper section is connected in the circuit and encapsulation.
Above-mentioned said sensing element measurement mechanism down comprises n * n measuring unit, the diametric(al) of the plane longshore current body pipeline at array place according to measuring array distribution, measuring in the array; The position of the measuring unit that each radius makes progress and the distance of pipeline center have following relation:
r
iBe the distance of i probe unit to pipeline center, R is the pipeline radius, and n is the sum of probe unit in a radius.
Above-mentioned said sensing element is above insulation course, in order to measure flow rate of fluid in the passage.
The range ability of above-mentioned said rate of flow of fluid is between 100 little meter per second-100 meter per seconds.
A kind of method for making of measurement component of above-mentioned flowmeter chip based on the MEMS technology is characterized in that it may further comprise the steps:
(1) goes out the figure of channel slot and measuring unit with the MEMS design of Simulation, and make the nickel metal mask plate that glass is substrate;
(2) have the figure transfer of passage on the silicon chip of photoresist to spin coating with litho machine; Glue is thick to be the 0.5-1.5 micron, and the silicon chip that has been coated with photoresist is placed on preceding the baking 10 minutes in the vacuum drying chamber, and temperature is 90 ℃; The extreme ultraviolet linear light carries out photoetching, and the time shutter is according to the thick 4-12s that is not all of glue, and then, the 20-60s that develops in concentration is 0.6% NaOH solution carries out back with the good silicon chip that develops and dried by the fire 15 minutes, and temperature is 120 ℃; With the dry silicon chip of crossing in the back of developing, place reactive ion etching machine, oxygen flow is 50sccm, and air pressure is 40mbar, and forword power is 50w, bombards 2 minutes, removes figure bottom cull, and the degree of depth is the 10-20 micron;
(3) then, use the LPCVD technology to deposit layer of silicon dioxide on silicon chip, thickness is identical with the degree of depth of channel slot;
(4) use acetone ultrasonic cleaning 5-10 minute, the photoresist of the non-channel part of flush away and deposit superincumbent silicon dioxide;
(5) use the LPCVD technology equally, the insulating layer of thin-film that deposition one deck special material is made, thickness is no more than 500 nanometers;
(6) use the mask plate that makes in the step (1), with photoetching and RIE technology are made n * n measurement mechanism on the insulation course above the channel slot structure, wherein each measurement mechanism is of a size of about 300 microns;
(7) fall step (3) with acid liquid corrosion and be deposited on silicon dioxide in the passage, hollow out channel slot; Said acid solution is HF: HCl=1: 1;
(8) structure of making is connected in the chip that designs circuit encapsulation as parts; The flowmeter that so obtains, according to using the software emulation Simulation result, the range of flow velocity is between 100 little meter per second-100 meter per second orders of magnitude.
Principle of work of the present invention: a simple thermopair just can be used as a measuring unit, by using a plurality of measuring units, the measured value that obtains is gathered aftertreatment so, just can obtain measured value comparatively accurately;
During calculating, the n number value that makes progress with the footpath obtains a mean value earlier, and measuring unit is pressed r here
iThe effect that distributes is to make the measuring-signal linearityization, thereby data processing circuit can be oversimplified; It is average once more vertically to go up such n mean value again, just can obtain a measured value comparatively accurately;
Superiority of the present invention: 1, some unpredictable factor has been cancelled out each other by such average computation, as eddy current among a small circle; Even if 2 wherein some measuring units damage, can not work, total system still can operate as normal, draws flow velocity; 3, the present invention has made passage into the inside of structure, avoided traditional thermoelectric induction installation to be exposed to structure in the fluid, the material of insulation course is selected the material that surface viscosity is low, thermal conductivity is good, then both can guarantee to measure the accuracy of numerical value, can significantly reduce in the fluid impurity again the pollution of flowmeter.
(4) description of drawings:
The silica-based synoptic diagram of Fig. 1 for obtaining through photoetching, figure transfer.
Fig. 2 is for having deposited the synoptic diagram after the layer of silicon dioxide silica-based.
The synoptic diagram that Fig. 3 obtains for the silicon dioxide flush away with the non-groove part of Fig. 2.
Fig. 4 is on the basis of Fig. 3, and surface deposition obtains the synoptic diagram behind one deck insulation film.
Fig. 5 obtains the synoptic diagram of the array of measuring unit for being substrate with Fig. 4 on insulation film after use photoetching, the RIE figure transfer.
Fig. 6 is for obtaining the final structure synoptic diagram with the silicon dioxide of groove part deposition after with acid liquid corrosion.
Wherein, 1 is silica-based, and 2 is silicon dioxide, 3 arrays for the measuring unit formation, and 4 is the fluid passage, 5 is insulation course.
(5) embodiment:
Embodiment: a kind of measurement component (see figure 6) of the flowmeter chip based on the MEMS technology, it is characterized in that it comprises that has silica-based 1 of a fluid passage 4, silica-based 1 and passage 4 tops thin, surface viscosity is low, the thermal conductivity good insulation performance layer 5 of one deck is arranged, insulation course 5 tops are sensing element measurement mechanisms down, and the insulation course upper section is connected in the circuit and encapsulation.
Above-mentioned said sensing element measurement mechanism down comprises n * n measuring unit, the diametric(al) of the plane longshore current body pipeline at array place according to measuring array distribution in the array 3 that measuring unit constitutes; The position of the measuring unit that each radius makes progress and the distance of pipeline center have following relation:
r
iBe the distance of i probe unit to pipeline center, R is the pipeline radius, and n is the sum of probe unit in a radius.(see figure 6)
Above-mentioned said sensing element is above insulation course, in order to measure flow rate of fluid in the passage.
The range ability of above-mentioned said rate of flow of fluid is between 100 little meter per second-100 meter per seconds.
A kind of method for making of measurement component of above-mentioned flowmeter chip based on the MEMS technology (see Fig. 1 to Fig. 6, it is characterized in that it may further comprise the steps:
(1) goes out the figure of channel slot and measuring unit with the MEMS design of Simulation, and make the nickel metal mask plate that glass is substrate;
(2) have to spin coating on the silicon chip of photoresist with the figure transfer of litho machine with passage, testing used is positive glue; Glue is thick to be 1 micron, and the silicon chip that has been coated with photoresist is placed on preceding the baking 10 minutes in the vacuum drying chamber, and temperature is 90 ℃.The extreme ultraviolet linear light carries out photoetching, and the time shutter is according to the thick 8s that is not all of glue, and then, the 40s that develops in concentration is 0.6% NaOH solution carries out back with the good silicon chip that develops and dried by the fire 15 minutes, and temperature is 120 ℃; With the dry silicon chip of crossing in the back of developing, place reactive ion etching machine, oxygen flow is 50sccm, and air pressure is 40mbar, and forword power is 50w, bombards 2 minutes, removes figure bottom cull, obtains figure such as accompanying drawing 1, and the degree of depth is 15 microns;
(3) then, use the LPCVD technology to deposit layer of silicon dioxide on silicon chip, thickness is identical with the degree of depth of channel slot, as Fig. 2;
(4) use acetone ultrasonic cleaning 5-10 minute, the photoresist of the non-channel part of flush away and deposit superincumbent silicon dioxide obtains the figure as accompanying drawing 3;
(5) use the LPCVD technology equally, the insulating layer of thin-film that deposition one deck special material is made, thickness is 300 nanometers, as accompanying drawing 4;
(6) use the mask plate that makes in the step (1), with photoetching and RIE technology are made n * n measurement mechanism on the insulation course above the channel slot structure, as accompanying drawing 5, wherein each measurement mechanism is of a size of 300 microns;
(7) (HF: HCl=1: 1) erode step (3) and be deposited on silicon dioxide in the passage, the hollow out channel slot is as accompanying drawing 6 with acid solution;
(8) structure of making is connected in the chip that designs circuit encapsulation as parts; The flowmeter that so obtains, according to using the software emulation Simulation result, the range of flow velocity is between 100 little meter per second-100 meter per second orders of magnitude.
Claims (5)
1. measurement component based on the flowmeter chip of MEMS technology, it is characterized in that it comprises that has the silica-based of fluid passage, there is thin, surface viscosity is low, the thermal conductivity good insulation performance layer of one deck silica-based and passage top, the insulation course top is a sensing element measurement mechanism down, and the insulation course upper section is connected in the circuit and encapsulation.
2. according to the measurement component of the said a kind of flowmeter chip based on the MEMS technology of claim 1, it is characterized in that said sensing element measurement mechanism down is according to measuring array distribution, measure in the array and comprise n * n measuring unit, the diametric(al) of the plane longshore current body pipeline at array place; The position of the measuring unit that each radius makes progress and the distance of pipeline center have following relation:
r
iBe the distance of i probe unit to pipeline center, R is the pipeline radius, and n is the sum of probe unit in a radius.
3. according to the measurement component of the said a kind of flowmeter chip based on the MEMS technology of claim 1, it is characterized in that said sensing element above insulation course, in order to measure flow rate of fluid in the passage.
4. according to the measurement component of the said a kind of flowmeter chip based on the MEMS technology of claim 1, the range ability that it is characterized in that said rate of flow of fluid is between 100 little meter per second-100 meter per seconds.
5. method for making based on the measurement component of the flowmeter chip of MEMS technology is characterized in that it may further comprise the steps:
(1) goes out the figure of channel slot and measuring unit with the MEMS design of Simulation, and make the nickel metal mask plate that glass is substrate;
(2) have the figure transfer of passage on the silicon chip of photoresist to spin coating with litho machine; Glue is thick to be the 0.5-1.5 micron, and the silicon chip that has been coated with photoresist is placed on preceding the baking 10 minutes in the vacuum drying chamber, and temperature is 90 ℃; The extreme ultraviolet linear light carries out photoetching, and the time shutter is according to the thick 4-12s that is not all of glue, and then, the 20-60s that develops in concentration is 0.6% NaOH solution carries out back with the good silicon chip that develops and dried by the fire 15 minutes, and temperature is 120 ℃; With the dry silicon chip of crossing in the back of developing, place reactive ion etching machine, oxygen flow is 50sccm, and air pressure is 40mbar, and forword power is 50w, bombards 2 minutes, removes figure bottom cull, and the degree of depth is the 10-20 micron;
(3) then, use the LPCVD technology to deposit layer of silicon dioxide on silicon chip, thickness is identical with the degree of depth of channel slot;
(4) use acetone ultrasonic cleaning 5-10 minute, the photoresist of the non-channel part of flush away and deposit superincumbent silicon dioxide;
(5) use the LPCVD technology equally, the insulating layer of thin-film that deposition one deck special material is made, thickness is no more than 500 nanometers;
(6) use the mask plate that makes in the step (1), with photoetching and RIE technology are made n * n measurement mechanism on the insulation course above the channel slot structure, wherein each measurement mechanism is of a size of about 300 microns;
(7) fall step (3) with acid liquid corrosion and be deposited on silicon dioxide in the passage, hollow out channel slot; Said acid solution is HF: HCl=1: 1;
(8) structure of making is connected in the chip that designs circuit encapsulation as parts; The flowmeter that so obtains, according to using the software emulation Simulation result, the range of flow velocity is between 100 little meter per second-100 meter per second orders of magnitude.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102620780A (en) * | 2011-12-27 | 2012-08-01 | 郑州炜盛电子科技有限公司 | MEMS (micro-electromechanical system) thermal-type flow sensor |
| CN103184862A (en) * | 2011-12-30 | 2013-07-03 | 国家纳米技术与工程研究院 | Three-dimensional MEMS (Micro-electromechanical Systems) accelerometer measurement part for petroleum well logging and preparation method thereof |
| CN103184886A (en) * | 2011-12-30 | 2013-07-03 | 国家纳米技术与工程研究院 | Measuring component of MEMS (Micro-electromechanical Systems) technology-based gas alarm and preparation method of measuring component |
| CN104280085A (en) * | 2014-10-24 | 2015-01-14 | 中国电子科技集团公司第三十八研究所 | Gas flow sensor and manufacturing method thereof |
| CN104655200A (en) * | 2015-03-19 | 2015-05-27 | *** | Dewaxing device of electromagnetic flowmeter |
| WO2016110135A1 (en) * | 2015-01-08 | 2016-07-14 | 上海新微技术研发中心有限公司 | Fold film temperature sensor and manufacturing method therefor |
| CN105865552A (en) * | 2016-04-08 | 2016-08-17 | 东南大学 | Integrated array type film gas flow sensor based on micro-electromechanical systems (MEMS) process and processing method thereof |
| CN103184886B (en) * | 2011-12-30 | 2016-12-14 | 国家纳米技术与工程研究院 | A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof |
| CN110274649A (en) * | 2019-06-13 | 2019-09-24 | 武汉大学 | A kind of hot temperature difference type flow sensor and preparation method thereof based on MEMS technology |
| CN111190024A (en) * | 2020-02-25 | 2020-05-22 | 济南大学 | Gas flow direction and flow rate detection device based on flexible asymmetric thin film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016110135A1 (en) * | 2015-01-08 | 2016-07-14 | 上海新微技术研发中心有限公司 | Fold film temperature sensor and manufacturing method therefor |
| CN104655200A (en) * | 2015-03-19 | 2015-05-27 | *** | Dewaxing device of electromagnetic flowmeter |
| CN105865552A (en) * | 2016-04-08 | 2016-08-17 | 东南大学 | Integrated array type film gas flow sensor based on micro-electromechanical systems (MEMS) process and processing method thereof |
| CN110274649A (en) * | 2019-06-13 | 2019-09-24 | 武汉大学 | A kind of hot temperature difference type flow sensor and preparation method thereof based on MEMS technology |
| CN110274649B (en) * | 2019-06-13 | 2020-09-01 | 武汉大学 | Thermal temperature difference type flow sensor based on MEMS technology and preparation method thereof |
| CN111190024A (en) * | 2020-02-25 | 2020-05-22 | 济南大学 | Gas flow direction and flow rate detection device based on flexible asymmetric thin film |
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Application publication date: 20110907 |