CN105606158B - A kind of power/magnetic Multifunction Sensor - Google Patents
A kind of power/magnetic Multifunction Sensor Download PDFInfo
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- CN105606158B CN105606158B CN201610150468.8A CN201610150468A CN105606158B CN 105606158 B CN105606158 B CN 105606158B CN 201610150468 A CN201610150468 A CN 201610150468A CN 105606158 B CN105606158 B CN 105606158B
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Abstract
The invention discloses a kind of power/magnetic Multifunction Sensor, the sensor includes the first cantilever beam 1, the cantilever beam top magnetic material 3 for being used for detecting externally-applied magnetic field, with for detecting the second cantilever beam 2, the siliceous gauge block 4 in cantilever beam top of applied force, and by first film transistor TFT1 raceway groove equivalent resistances R1, the second thin film transistor (TFT) TFT2 raceway groove equivalent resistances R2, the 3rd thin film transistor (TFT) TFT3 raceway groove equivalent resistances R3With the 4th thin film transistor (TFT) TFT4 raceway groove equivalent resistances R4The first Wheatstone bridge is constituted, the detection in magnetic field is realized；5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistances R1', the 6th thin film transistor (TFT) TFT2 ' raceway groove equivalent resistances R2', the 7th thin film transistor (TFT) TFT3 ' raceway groove equivalent resistances R3' and the 8th thin film transistor (TFT) TFT4 ' raceway groove equivalent resistances R4' the second Wheatstone bridge is constituted, realize the detection of power；The power that the present invention is provided/magnetic Multifunction Sensor small volume, cost is low, and the degree of accuracy is high, and stability is good.
Description
Technical field
The present invention relates to sensor technical field, more particularly, to a kind of power/magnetic multifunction integrated sensor.
Background technology
With the rapid development of science and technology, sensor technology is extremely paid attention to, but single one physical quantity sensor can not
The fields such as industrial production, Aero-Space are met, in order to accurately be detected to the multiple physical quantity variations of environment simultaneously,
The sensing element of integrated a variety of functions can measure multiple physical quantitys, such a power/magnetic multifunctional sensing utensil simultaneously on one chip
Have the advantages that small volume, it is lightweight and integrated.
Patent No. CN201420085249.2 utility models refer to a kind of temperature, humidity, air pressure integrated sensor,
Including a circuit board, on circuit boards provided with temperature sensor, humidity sensor, signal processing circuit, temperature sensor, humidity
The output end of sensor and pressure sensor is connected with the input of signal processing circuit, signal processing circuit and circuit board
Formula signal processing circuit board is integrally formed, pressure sensor uses vacuum piezoresistive pressure sensor, and humidity sensor is adopted
It is platinum resistance temperature sensor, humidity sensor uses Humidity-Sensitive Capacitance Sensor, vacuum piezoresistive pressure sensor,
Platinum resistance temperature sensor, Humidity-Sensitive Capacitance Sensor are integrated on integral signal process circuit plate.The utility model is reduced
The influence of outer bound pair sensor signal, improves stability, reduces production cost, can be widely applied to environmental monitoring, meteorological
Numerous industries such as measurement, intelligent building, Aero-Space, military project, petrochemical industry, oil well, electric power, ship, pipeline.
A kind of Patent No. CN201310117126.2 MEMS temperature humidity collection compatible with CMOS technology of disclosure of the invention
Into sensor and its manufacture method.The invention provides a kind of temperature humidity integrated sensor, and it includes base material, is formed on base material
Insulating barrier, the bottom electrode being formed on insulating barrier, the intermediate moisture sensing layer that is formed on bottom electrode and be formed at centre
Top electrode on humidity sensing layer, wherein bottom electrode are used and formed by N-type polycrystalline silicon/aluminium or N-type polycrystalline silicon/p-type polysilicon
Thermocouple carry out measurement temperature.The humiture integrated sensor of the invention, bottom electrode forms thermocouple using Al and polysilicon, this
It is CMOS compatible technologies, can be simultaneously circulated with CMOS, it is easily manufactured.
Patent No. CN201210498929.2 patent of invention discloses a kind of integrated sensing of passive and wireless epidemic disaster
Device, using cantilever beam capacitive temperature sensor and interdigital capacitive humidity sensor, including half be sequentially connected from bottom to up
Conductor substrate, lower dielectric layer, lower metal layer, middle dielectric layer, intermediate metal layer, upper dielectric layer, and on upper dielectric layer
The upper metal interconnecting wires and humidity-sensitive material on surface.The cantilever capacitance formula temperature sensor-inductor loop and interdigital capacitor of the invention
Humidity sensor-inductor loop frequency dividing work, while wireless measurement temperature, humidity, can apply to closed environment or severe bar
Temperature, the measurement and collection of two kinds of parameters of humidity under part.The invention sensor is prepared using CMOS MEMS technologies, with preferable
Performance and relatively low cost.
Patent No. CN201210451111.5 patent of invention discloses a kind of temperature, pressure integrated sensor, including temperature
Spend sensor, binding circuit board, temperature sensor mounting groove, pressure element, pressure seat, pressure inlet port and wire, its feature
It is：Pressure inlet port is located at the lower end of pressure seat, and binding circuit board is located at the upper end of pressure seat, and binding circuit board is close to pressure
The top surface of power seat, temperature sensor is arranged in temperature sensor mounting groove and is close to pressure seat, and the heat of measured medium passes through
Pressure seat is conducted to temperature sensor, and temperature sensor is connected by wire with binding circuit board carries out signal transmission.The hair
It is bright by temperature sensor be close to above the stainless steel seat of pressure sensor or side, be used as medium heat by measuring and pass
The temperature for leading the stainless steel of carrier obtains the temperature of medium.The structure is easy for installation, easy to use, is oil, chemical industry, food
Product, refrigerating and air conditioning industry provide a kind of new temperature, pressure integrated sensor.
The content of the invention
In order to solve the above problems, present inventor has performed studying with keen determination, designing one kind can be while detects power and magnetic
Field Multifunction Sensor, so as to complete the present invention.
In particular it is object of the present invention to provide following aspect：
(1) a kind of power/magnetic Multifunction Sensor, wherein, the sensor includes：
For detecting the first cantilever beam 1 of externally-applied magnetic field, and
For detecting the second cantilever beam 2 of applied force.
(2) Multifunction Sensor according to above-mentioned 1, wherein,
First cantilever beam 1 is silicon cantilever, including (preferably root making) four thin film transistor (TFT)s are the first film
Transistor TFT1, the second thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3 and the 4th thin film transistor (TFT) TFT4, its top is
Free end, preferred fabrication is magnetic material；And/or
Second cantilever beam 2 is silicon cantilever, including (preferably root making) four thin film transistor (TFT)s, the 5th film is brilliant
Body pipe TFT1 ', the 6th thin film transistor (TFT) TFT2 ', the 7th thin film transistor (TFT) TFT3 ' and the 8th thin film transistor (TFT) TFT4 ', its top
For free end, the more preferably integrated siliceous gauge block of preferred fabrication, non-magnetic material.
(3) Multifunction Sensor according to above-mentioned 1 or 2, wherein,
The first film transistor TFT1 raceway groove equivalent resistances R1, the second thin film transistor (TFT) TFT2 raceway groove equivalent resistances R2、
3rd thin film transistor (TFT) TFT3 raceway groove equivalent resistances R3With the 4th thin film transistor (TFT) TFT4 raceway groove equivalent resistances R4, it is preferably described etc.
Imitate resistance R1, equivalent resistance R2, equivalent resistance R3With equivalent resistance R4Constitute the first Wheatstone bridge；And/or
The 5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistances R1', the 6th thin film transistor (TFT) TFT2 ' raceway groove equivalent electrics
Hinder R2', the 7th thin film transistor (TFT) TFT3 ' raceway groove equivalent resistances R3' and the 8th thin film transistor (TFT) TFT4 ' raceway groove equivalent resistances R4',
It is preferred that the raceway groove equivalent resistance R1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalent resistance R4' constitute the second favour
Stone electric bridge.
(4) Multifunction Sensor according to above-mentioned 3, wherein,
The equivalent resistance R1With the equivalent resistance R2Series winding, forms the first output voltage Vout1；And/or
The equivalent resistance R3With the equivalent resistance R4Series winding, forms the second output voltage Vout2；And/or
The equivalent resistance R1' and the equivalent resistance R2' series winding, forms the 3rd output voltage Vout1′；And/or
The equivalent resistance R3' and the equivalent resistance R4' series winding, forms the 4th output voltage Vout2′。
(5) Multifunction Sensor according to above-mentioned 3 or 4, wherein, when having externally-applied magnetic field effect, because of magneticaction, institute
State the first cantilever beam to bend, the first Wheatstone bridge bridge resistance changes, the first output voltage Vout1
With the second output voltage Vout2Difference output is constituted, realizes that externally-applied magnetic field is measured.
(6) Multifunction Sensor according to one of above-mentioned 3 to 5, wherein, there is applied force to be applied to the second cantilever back
During end, second cantilever beam bends, and the second Wheatstone bridge bridge resistance changes, the 3rd output electricity
Press Vout1' and the 4th output voltage Vout2' difference output is constituted, realize that applied force is measured.
(7) Multifunction Sensor according to one of above-mentioned 1 to 6, wherein, the first cantilever beam 1 includes silica bottom
Layer 5, monocrystalline silicon 6, silicon dioxide top layer 7 and 13, Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, film crystal
Pipe grid end 11, thin film transistor (TFT) drain terminal 12 and magnetic material 3.
(8) Multifunction Sensor according to one of above-mentioned 1 to 7, wherein, the second cantilever beam 2 includes silica bottom
Layer 5, monocrystalline silicon 6, silicon dioxide top layer 7 and 13, Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, film crystal
Pipe grid end 11, thin film transistor (TFT) drain terminal 12 and siliceous gauge block 4.
(9) Multifunction Sensor according to one of above-mentioned 1 to 8, wherein,
The first silicon overarm arm 1 and second silicon overarm arm 2 use micro-electronic machining system (MEMS) fabrication techniques,
And/or
The thin film transistor (TFT) is made using complementary metal oxide silicon (CMOS) technique.
The present invention have the advantage that including：
1st, the present invention makes two silicon cantilevers on the same chip, and the detection to power and magnetic field can be realized simultaneously, is had
Integrated feature；
2nd, the present invention detects power/magnetic using cantilever beam structure, improves power/magnetic sensitivity of sensor；
3rd, four thin film transistor channel equivalent resistances are respectively adopted in the present invention and constitute two open loop Wheatstone bridge roads.Open
The resistance of the convenient test single thin film transistor channel equivalent resistance of bridge of ring bridge, while thin film transistor (TFT) has self-regulated zero power
Can, the adjustment of sensor zero drift can be achieved, when sensor is in the effect without applied force or magnetic field so that it exports telecommunications
Number be equal to zero, improve accuracy of the sensor to applied force/Magnetic testi；
4th, the sensor is made on high resistant monocrystalline silicon, and small volume, cost is low, and stability is good.
Brief description of the drawings
Fig. 1 is power/magnetic Multifunction Sensor basic structure 3 dimensional drawing according to a kind of preferred embodiment of the invention；
Fig. 2 is the structure for measurement of magnetic field, the schematic diagram of the first Wheatstone bridge of equivalent circuit 1；
Fig. 3 is the structure tested for power, the schematic diagram of the second Wheatstone bridge of equivalent circuit 2；
Fig. 4 is the first silicon cantilever diagrammatic cross-section；
Fig. 5 is the second silicon cantilever diagrammatic cross-section.
Drawing reference numeral explanation：
The cantilever beams of 1- first (Beam1)；
The cantilever beams of 2- second (Beam2)；
3- magnetic materials (or first cantilever beam magnetic material)；
The siliceous gauge blocks of 4- (or the siliceous gauge block of the second cantilever beam)；
TFT1- first film transistors；
The thin film transistor (TFT)s of TFT2- second；
The thin film transistor (TFT)s of TFT3- the 3rd；
The thin film transistor (TFT)s of TFT4- the 4th；
The thin film transistor (TFT)s of TFT1 '-the five；
The thin film transistor (TFT)s of TFT2 '-the six；
The thin film transistor (TFT)s of TFT3 '-the seven；
The thin film transistor (TFT)s of TFT4 '-the eight；
G1- first film transistor grid；
G2- the second thin-film transistor gate；
G3- the three thin-film transistor gate；
G4- the four thin-film transistor gate；
G1'-the five thin-film transistor gate；
G2'-the six thin-film transistor gate；
G3'-the seven thin-film transistor gate；
G4'-the eight thin-film transistor gate；
Vout1- the first output end；
Vout2- the second output end；
Vout1'-the three output end；
Vout2'-the four output end；
VSS、VDD- the first connection power supply；
VSS′、VDD'-the second connection power supply；
R1- first film transistor raceway groove equivalent resistance；
R2- the second thin film transistor channel equivalent resistance；
R3- the three thin film transistor channel equivalent resistance；
R4- the four thin film transistor channel equivalent resistance；
R1'-the five thin film transistor channel equivalent resistance；
R2'-the six thin film transistor channel equivalent resistance；
R3'-the seven thin film transistor channel equivalent resistance；
R4'-the eight thin film transistor channel equivalent resistance；
5- bottom layer silicon dioxides (SiO2)；
6- monocrystalline silicon (Si)；
7- top layer silicon dioxides (SiO2)；
8- Nano thin films；
9- thin film transistor (TFT)s source (S)；
10- gate oxides；
11- thin film transistor (TFT)s grid end (G)；
12- thin film transistor (TFT)s drain terminal (D)；
13- top layer silicon dioxides (SiO2)；
14- top layer silicon dioxides (SiO2)；
15- monocrystalline silicon (Si)；
16- bottom layer silicon dioxides (SiO2)。
Embodiment
The present invention is described in detail below, and the features and advantages of the invention will become more clear with these explanations
Chu, clearly.
Special word " exemplary " is meant " being used as example, embodiment or illustrative " herein.Here as " exemplary "
Illustrated any embodiment should not necessarily be construed as preferred or advantageous over other embodiments.Although each of embodiment is shown in the drawings
In terms of kind, but unless otherwise indicated, it is not necessary to accompanying drawing drawn to scale.
A kind of power/magnetic the Multifunction Sensor provided according to the present invention, as shown in figure 1, including being used for detecting externally-applied magnetic field
The first cantilever beam (Beam1), and for detecting the second cantilever beam (Beam2) of applied force.First cantilever beam includes the
One thin film transistor (TFT) TFT1, the second thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3, the 4th thin film transistor (TFT) TFT4 and from
By holding, second cantilever beam includes the 5th thin film transistor (TFT) TFT1 ', the 6th thin film transistor (TFT) TFT2 ', the 7th thin film transistor (TFT)
TFT3 ', the 8th thin film transistor (TFT) TFT4 ' and free end.
In a preferred embodiment, made in the root of first cantilever beam first film transistor TFT1,
Second thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3 and the 4th thin film transistor (TFT) TFT4, free end make the material that is magnetic
Material；The 5th thin film transistor (TFT) TFT1 ', the 6th thin film transistor (TFT) TFT2 ', the 7th film are made in the root of second cantilever beam
Transistor TFT3 ' and the 8th thin film transistor (TFT) TFT4 ', free end, which makes, non-magnetic integrated siliceous gauge block；In same core
Two cantilever beams are made on piece, the detection to power and magnetic field can be realized simultaneously, integration degree is high.
In further preferred embodiment, as shown in Figures 2 and 3, described first film transistor TFT1 raceway grooves etc.
Imitate resistance R1, the second thin film transistor (TFT) TFT2 raceway groove equivalent resistances R2, the 3rd thin film transistor (TFT) TFT3 raceway groove equivalent resistances R3With
Four thin film transistor (TFT) TFT4 raceway groove equivalent resistances R4, the 5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistances R1', the 6th film
Transistor TFT2 ' raceway groove equivalent resistances R2', the 7th thin film transistor (TFT) TFT3 ' raceway groove equivalent resistances R3' and the 8th thin film transistor (TFT)
TFT4 ' raceway groove equivalent resistances R4′.The equivalent resistance R1, equivalent resistance R2, equivalent resistance R3With equivalent resistance R4Constitute the first favour
Stone electric bridge；The raceway groove equivalent resistance R1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalent resistance R4' constitute
Second Wheatstone bridge.
The resistance of the convenient test single thin film transistor channel equivalent resistance of bridge of open loop bridge, while film crystal pipe
Have from zeroing function, the adjustment of sensor zero drift can be achieved, when sensor is in the effect without applied force or magnetic field so that
It exports electric signal and is equal to zero, improves accuracy of the sensor to applied force/Magnetic testi.
In embodiment still more preferably, the equivalent resistance R1With the equivalent resistance R2Series winding, forms first
Output voltage Vout1；The equivalent resistance R3With the equivalent resistance R4Series winding, forms the second output voltage Vout2；It is described equivalent
Resistance R1' and the equivalent resistance R2' series winding, forms the 3rd output voltage Vout1′；The equivalent resistance R3' and the equivalent electric
Hinder R4' series winding, forms the 4th output voltage Vout2′。
When having externally-applied magnetic field effect, because of magneticaction, first cantilever beam bends, first Wheatstone bridge
Bridge resistance changes, the first output voltage Vout1With the second output voltage Vout2Difference output is constituted, is realized outer
Plus magnetic-field measurement.When having the applied force to be applied to the second cantilever beam top, second cantilever beam bends, second favour this
Energization bridge bridge resistance changes, the 3rd output voltage Vout1' and the 4th output voltage Vout2' composition difference is defeated
Go out, realize that applied force is measured.
In a preferred embodiment, as shown in Figure 4 and Figure 5, first cantilever beam 1 includes silica bottom
5th, monocrystalline silicon 6, silicon dioxide top layer 7 and 13, Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT)
Grid end 11, thin film transistor (TFT) drain terminal 12 and magnetic material 3.Second cantilever beam 2 include silica bottom 5, monocrystalline silicon 6,
It is silicon dioxide top layer 7 and 13, Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) grid end 11, thin
Film transistor drain terminal 12 and siliceous gauge block 4.
In further preferred embodiment, the first silicon overarm arm 1 and second silicon overarm arm 2 use micro- electricity
Sub- system of processing (MEMS) fabrication techniques, the thin film transistor (TFT) uses complementary metal oxide silicon (CMOS) technique system
Make.
In embodiment still more preferably, the sensor is by microelectronics machine in high resistant monocrystalline substrate
Tool process technology (MEMS) and CMOS complementary metal-oxide-semiconductor technique (CMOS), which are realized, to be made, using electrostatic bonding technology
(Bonding), under 800-1000V voltages, 300-400 DEG C of high temperature by two great electrostatic force in interface by sensor chip
With Pyrex key and together with, and using in the encapsulation on a printed circuit board (pcb) of pressure welding technology, finally by high-precision magnetic field
Calibration system and high-precision full-automatic thrust meter complete sensor characteristics demarcation.The sensor makes on high resistant monocrystalline silicon, body
Product is small, and cost is low, and stability is good.
In embodiment still more preferably, the sensor production is comprised the following steps that：
Step one：Thickness is 450 μm of N-type<100>Crystal orientation twin polishing monocrystalline silicon piece；
Step 2：Boiled with the concentrated sulfuric acid to emitting and a large amount of deionized water rinsings are used after white cigarette, cooling, then electronics cleaning is respectively adopted
Liquid 1, No. 2 each cleanings twice, use a large amount of deionized water rinsings, are put into drier and dry；
Step 3：Cleaned monocrystalline silicon piece is put into high temperature oxidation furnace and carries out once oxidation, using thermal oxidation technology
Grow SiO2Layer, aoxidizes 1180 DEG C of furnace temperature, grows SiO2Thickness degree 650nm；
Step 4：Using litho machine carry out a photoetching, photolithography process be gluing, front baking, exposure, development, post bake,
Corrode and remove photoresist, be lithographically formed thin film transistor (TFT) active area window, using the silicon wafer cleaning method cleaning silicon chip of above-mentioned steps three；
Step 5：Nano thin film is grown using chemical vapor deposition (CVD) system, and carried out simultaneously in situ low-doped；
Step 6：Secondary photoetching is carried out using litho machine, photolithography process be gluing, front baking, exposure, development, post bake,
Corrode and remove photoresist, be lithographically formed thin film transistor (TFT) doped p type channel layer in situ, cleaned using the silicon wafer cleaning method of above-mentioned steps three
Silicon chip；
Step 7：Silicon chip carries out secondary oxidation after cleaning, and SiO is grown using thermal oxidation technology2Layer, in a photoetching
Active area window regrows thickness 50nm SiO2Layer, is used as gate oxide；
Step 8：Using low-pressure chemical vapor deposition (LPCVD) system preparing polysilicon film；
Step 9：Using litho machine carry out third photo etching, photolithography process be gluing, front baking, exposure, development, post bake,
Corrode and remove photoresist, be lithographically formed thin film transistor (TFT) polysilicon gate, while using the silicon wafer cleaning method cleaning silicon chip of above-mentioned steps three；
Step 10：P ion is injected using ion implantation apparatus, Implantation Energy is 40KeV, high dose (such as dosage is 6.0 ×
1013) inject, polysilicon gate phosphorus diffusion, it is real by polysilicon gate self-aligned technology to reduce resistance of polycrystalline silicon grid rate
Existing thin film transistor (TFT) source electrode and drain impurities doping, 900 DEG C of high annealings 60 minutes；
Step 11：Four mask is carried out using litho machine, photolithography process is gluing, front baking, exposure, development, heavily fortified point
Film, corrode and remove photoresist, be lithographically formed thin film transistor (TFT) polysilicon gate, while cleaning silicon using the silicon wafer cleaning method of above-mentioned steps three
Piece；Thickness 50nm SiO is removed using wet etching2Layer；
Step 12：Pass through H2+O2Synthesize oxidizing process and carry out polysilicon gate oxidation, grow SiO2Thickness degree 400nm, it is real
Existing polysilicon gate protection；
Step 13：Pass through five photoetching, etched thin film transistors source electrode, drain and gate；Front side of silicon wafer magnetron sputtering
Aluminium electrode, 0.5 μm of aluminium electrode thickness；
Step 14：Six photoetching, anti-carve aluminium, form source electrode, drain and gate electrode respectively；
Step 15：Silicon chip is put into vacuum high temperature furnace, Alloying Treatment is carried out at 400 DEG C, time 30min makes source
Pole and drain electrode etc. form good Ohmic contact；
Step 10 six：Magnetic material is made in the first cantilever beam free end；
Step 10 seven：Seven photoetching, photoetching silicon chip back side formation silicon cup window；
Step 10 eight：Eight photoetching, dual surface lithography front side of silicon wafer formation cantilever beam structure window；
Step 10 nine：C-type silicon cup is etched using deep etching (ICP) technology, cantilever beam structure is discharged；
Step 2 ten：Sensor chip preliminary test；
Step 2 11：Sensor chip is encapsulated；
Step 2 12：Sensor is always surveyed.
Wherein, the microelectron-mechanical system of processing (MEMS, Micro-Electro-Mechanical System), be
Refer to technology that micrometer/nanometer material is designed, processes, manufactures, measures and controlled, also referred to as microelectromechanical systems, micro-
System, micromechanics etc., grow up on the basis of microelectric technique (semiconductor fabrication), are related to material, machinery, electricity
Son, microelectronics, chemistry, physics (particularly mechanics and optics), biology, medical science, information etc. are multidisciplinary.Merged photoetching,
The high-tech electronic mechanical device of the fabrication techniques such as burn into film, LIGA, silicon micromachined, non-silicon micromachined and precision optical machinery processing
Part, wherein, LIGA refers to photoetching, electroforming and injection；The characteristics of MEMS technology, can be summarized as small size, variation, pass through
MEMS technology prepare device volume is small, integrated height；The CMOS technology refers to complementary metal oxide silicon
(Complementary Metal-Oxide-Semiconductor), wherein field-effect transistor (MOSFET) are voltage control
Type device, is to constitute cmos digital integrated circuit and the core devices of CMOS Analogous Integrated Electronic Circuits, the CMOS technology is referred specifically to
The complementary type MOS integrated circuit fabrication process that CMOS (PMOS and NMOS tube) is collectively formed, its feature is
Low-power consumption.
The LPCVD (Low Pressure Chemical Vapor Deposition), is a kind of CVD reactions that below 100Torr is reduced in pressure,
It is widely used in the doped or undoped polysilicon of deposition, silicon nitride, silica, silicide film.Because molecule is averaged under low pressure
The mass transport velocity of free path increase, gaseous reactant and byproduct is accelerated, so that forming the reaction of deposited thin film material
Speed is accelerated, while the inhomogeneities of gas distribution can be eliminated within a very short time, so the film quality of deposition is high, uniform
The good, structural intergrity of property is good, pin hole is few.
The ICP refers to inductively coupled plasma, wherein, inductively coupled plasma (ICP) lithographic technique is microcomputer
One of key technology in electric system device fabrication.
The present invention is described in detail above in association with embodiment and exemplary example, but these explanations are simultaneously
It is not considered as limiting the invention.It will be appreciated by those skilled in the art that without departing from the spirit and scope of the invention,
A variety of equivalencings, modification can be carried out to technical solution of the present invention and embodiments thereof or is improved, these each fall within the present invention
In the range of.Protection scope of the present invention is determined by the appended claims.
Claims (6)
1. a kind of power/magnetic Multifunction Sensor, it is characterised in that the sensor includes：
For detecting the first cantilever beam (1) of externally-applied magnetic field, and
For detecting the second cantilever beam (2) of applied force；
First cantilever beam (1) is silicon cantilever, including four thin film transistor (TFT)s are first film transistor TFT1, second
Thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3 and the 4th thin film transistor (TFT) TFT4, its top are free end, free end system
It is used as magnetic material (3)；With
Second cantilever beam (2) is silicon cantilever, including four thin film transistor (TFT)s, the 5th thin film transistor (TFT) TFT1 ', the 6th thin
Film transistor TFT2 ', the 7th thin film transistor (TFT) TFT3 ' and the 8th thin film transistor (TFT) TFT4 ', its top are free end, free end
Make integrated siliceous gauge block (4)；
The first film transistor TFT1 raceway groove equivalent resistances R1, the second thin film transistor (TFT) TFT2 raceway groove equivalent resistances R2, the 3rd
Thin film transistor (TFT) TFT3 raceway groove equivalent resistances R3With the 4th thin film transistor (TFT) TFT4 raceway groove equivalent resistances R4, the equivalent resistance R1、
Equivalent resistance R2, equivalent resistance R3With equivalent resistance R4Constitute the first Wheatstone bridge；With
The 5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistances R1', the 6th thin film transistor (TFT) TFT2 ' raceway groove equivalent resistances R2′、
7th thin film transistor (TFT) TFT3 ' raceway groove equivalent resistances R3' and the 8th thin film transistor (TFT) TFT4 ' raceway groove equivalent resistances R4', the ditch
Road equivalent resistance R1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalent resistance R4' the second Wheatstone bridge is constituted,
First cantilever beam (1) includes silica bottom (5), monocrystalline silicon (6), silicon dioxide top layer (7 and 13), nano-silicon
Film (8), thin film transistor (TFT) source (9), gate oxide (10), thin film transistor (TFT) grid end (11), thin film transistor (TFT) drain terminal (12)
With magnetic material (3)；
Second cantilever beam (2) includes silica bottom (5), monocrystalline silicon (6), silicon dioxide top layer (7 and 13), nano-silicon
Film (8), thin film transistor (TFT) source (9), gate oxide (10), thin film transistor (TFT) grid end (11), thin film transistor (TFT) drain terminal (12)
With siliceous gauge block (4).
2. Multifunction Sensor according to claim 1, it is characterised in that
Integrated siliceous gauge block (4) is non-magnetic material.
3. Multifunction Sensor according to claim 1, it is characterised in that
The equivalent resistance R1With the equivalent resistance R2Series winding, forms the first output voltage Vout1；With
The equivalent resistance R3With the equivalent resistance R4Series winding, forms the second output voltage Vout2；With
The equivalent resistance R1' and the equivalent resistance R2' series winding, forms the 3rd output voltage Vout1′；With
The equivalent resistance R3' and the equivalent resistance R4' series winding, forms the 4th output voltage Vout2′。
4. Multifunction Sensor according to claim 3, it is characterised in that when having externally-applied magnetic field effect, because of magneticaction,
First cantilever beam bends, and the first Wheatstone bridge bridge resistance changes, first output voltage
Vout1With the second output voltage Vout2Difference output is constituted, realizes that externally-applied magnetic field is measured.
5. Multifunction Sensor according to claim 3, it is characterised in that there is applied force to be applied to the second cantilever beam top
When, second cantilever beam bends, and the second Wheatstone bridge bridge resistance changes, the 3rd output voltage
Vout1' and the 4th output voltage Vout2' difference output is constituted, realize that applied force is measured.
6. Multifunction Sensor according to claim 1, it is characterised in that
The first silicon overarm arm (1) and second silicon overarm arm (2) use micro-electronic machining system (MEMS) fabrication techniques,
With
The thin film transistor (TFT) is made using complementary metal oxide silicon (CMOS) technique.
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