CN205428984U - Perpendicular ultraviolet LED chip - Google Patents
Perpendicular ultraviolet LED chip Download PDFInfo
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- CN205428984U CN205428984U CN201620254324.2U CN201620254324U CN205428984U CN 205428984 U CN205428984 U CN 205428984U CN 201620254324 U CN201620254324 U CN 201620254324U CN 205428984 U CN205428984 U CN 205428984U
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Abstract
The utility model relates to a perpendicular ultraviolet LED chip relates to the semiconductor device of the specially adapted for emission of light that has a current potential potential jump barrier at least, including N type epitaxial layer, multi -quantum well, P type epitaxial layer, niAg metal lead extension layer, DBR layer, P electrode stopper, bonded metal cr layer a, bonded metal au layer a, bonded metal au layer b, bonded metal cr layer b, silicon chip and N electrode, the utility model discloses a metal lead extension layer niAg in addition DBR replaces the perpendicular ultraviolet LED chip's among the prior art metallic reflective layer, has overcome among the prior art metallic reflective layer to the absorption of light, the luminous luminance that has improved perpendicular ultraviolet LED chip.
Description
Technical field
What the technical solution of the utility model related to an at least jump in potential potential barrier is specially adapted for photoemissive semiconductor
Device, specifically a kind of vertical UV LED chip.
Background technology
Along with the fast development of LED technology, wave-length coverage the ultraviolet LED of 350-280nm range of application the most increasingly
Extensively.Ultraviolet LED compares that traditional ultraviolet source is more energy-conservation, and the life-span is longer, and without noxious material.But and InGaN
Near ultraviolet LED or the blue-ray LED of base are compared, and the quantum efficiency of ultraviolet LED is the lowest, additionally plus metallic mirror
The power output that the absorption of ultraviolet band light directly results in ultraviolet LED is only the 5%-8% of input power.
Existing upside-down mounting and vertical UV LED chip mainly form metallic mirror based on the metal of Ni, Ag, Al and make
For the reflecting layer in LED chip to reach reflecting effect, and Cr, Pt, Au prepare metal electrode.But Ni, Ag, Al,
These metals of Cr, Pt, Au have the highest absorbability to wavelength at the ultraviolet band of 350-280nm, directly influence purple
The luminosity of outer LED chip.Existing DBR technology is used on packed LED chip, by packed LED chip
The back side back of the body plate DBR and reach reflect light and improve the purpose of brightness, the thickness of the DBR that the LED chip of different-waveband uses
Degree difference.CN201110212605.3 discloses TCO type conduction rectilinear blue-light LED chip of DBR and preparation method thereof,
Its main technical schemes is to use conduction DBR as speculum and TCO as current extending, there is TCO for deep ultraviolet
Light has the strongest absorbability, is not suitable for being applied to ultraviolet vertical LED chip, and TCO and electric conductivity DBR exist
Expensive, that preparation technology is unstable defect.
Utility model content
Technical problem to be solved in the utility model is: provides a kind of vertical UV LED chip, uses metal current expansion
The metallic reflector that layer Ni/Ag replaces vertical UV LED chip of the prior art plus DBR, overcomes in prior art
The metallic reflector absorption to light, improves the luminosity of vertical UV LED chip.
The utility model solves this technical problem and be the technical scheme is that a kind of vertical UV LED chip, including N
Type epitaxial layer, MQW, p-type epitaxial layer, Ni/Ag metal current extending, DBR layer, P electrode plug, bond wire
Cr layer a, bond wire Au layer a, bond wire Au layer b, bond wire Cr layer b, silicon chip and N electrode；Above-mentioned respectively
Layer order immediately is: N-type epitaxy layer immediately multiple quantum well layer, multiple quantum well layer immediately p-type epitaxial layer, p-type epitaxial layer
Immediately Ni/Ag metal current extending, Ni/Ag metal current extending immediately DBR layer, DBR layer immediately bond wire Cr
Layer a, bond wire Cr layer a immediately bond wire Au layer a, bond wire Au layer a immediately bond wire Au layer b,
Bond wire Au layer b immediately bond wire Cr layer b, bond wire Cr layer b immediately silicon chip, P electrode plug is prepared at Ni/Ag
It is embedded in DBR layer again on metal current extending, and the thickness of P electrode plug is identical with the thickness of DBR layer, N electrode
The most immediately Middle face in N-type epitaxy layer.
Above-mentioned a kind of vertical UV LED chip, described Ni/Ag metal current extending, wherein the thickness of Ni is
The thickness of Ag is
Above-mentioned a kind of vertical UV LED chip, described DBR layer, a layer thickness beSiO2, so
The rear TiO alternately covering 4～20 layers respectively2And SiO2Constitute, every layer of TiO2Thickness beEvery layer of SiO2
Thickness be
Above-mentioned a kind of vertical UV LED chip, described P electrode plug is 2～10, is to be made up of Cr/Al/Ti/Au, its
In, Cr thickness isAl thickness isTi thickness isThickness with Au
Change along with the change of DBR layer thickness.
Above-mentioned a kind of vertical UV LED chip, the thickness of Cr in described bond wire Cr layer a and bond wire Cr layer b
For
Above-mentioned a kind of vertical UV LED chip, the thickness of Au in described bond wire Au layer a and bond wire Au layer b
It is 1～5 μm.
Above-mentioned a kind of vertical UV LED chip, described N electrode is to be made up of Cr/Al/Ti/Au, and wherein, Cr thickness isAl thickness isTi thickness isWith Au thickness it is
The preparation method step of above-mentioned a kind of vertical UV LED chip is as follows:
The first step, grows N-type epitaxy layer, multiple quantum well layer and p-type extension on Sapphire Substrate slice, thin piece successively with MOCVD
Layer, is 98%H by the epitaxial wafer mass percent concentration grown2SO4It is 30%H with mass percent concentration2O2By volume
Mixed solution than=3: 1 is heated to 80 DEG C, soaks 10 minutes, then uses deionized water rinsing 5 minutes, finally with getting rid of
Dry machine dries 20 minutes；
Second step, at the surface of the p-type epitaxial layer of the Sapphire Substrate slice, thin piece processed through the first step, deposited by electron beam evaporation platform
Being deposited with one layer of ultra-thin W metal/Ag, as current extending, wherein the THICKNESS CONTROL of Ni existsThe thickness of Ag
ControlRequire that this metal current extending forms Ohmic contact with p-type epitaxial layer after next step annealing；
3rd step, the Ni/Ag metal current extending annealing furnace obtained by second step is at N2Anneal under environment, annealing temperature
Degree is 350 DEG C～400 DEG C, N2Flow velocity is 10L/min, and annealing time is 5～10 minutes；
4th step, the Ni/Ag metal current extending after three-step annealing prepares DBR layer, and the material of use is SiO2
And TiO2Evaporation source, the method for deposited by electron beam evaporation is first deposited with a layer thickness and isSiO2, then by TiO2
And SiO2Alternatively vaporised, evaporates 4～20 cycles, the TiO in each evaporation periods2Thickness be
SiO2Thickness beDuring evaporation, electron beam evaporation platform pressure value is 0.0213Pa, and temperature is 300 DEG C；
5th step, carries out gluing on the DBR layer that the 4th step prepares, exposes, develops and post bake, form out 2～10 P
Electrode plug figure, etches 2～10 P electrode holes with HF corrosive liquid the most again, and the degree of depth in etched P electrode hole is just
For the thickness of DBR layer, cleaning of removing photoresist the most again dries, and carries out gluing, exposed and developed, then deposited by electron beam evaporation the most again
Platform is deposited with Cr/Al/Ti/Au successively as P electrode plug, and guarantees that formed 2～10 P electrode plug is prepared above-mentioned
On Ni/Ag metal current extending, the thickness of P electrode plug is identical with the thickness of DBR layer；
6th step, after the evaporation P electrode plug of the 5th step completes, with blue film by useless metal-stripping, clear after stripping
Wash drying, on the above-mentioned DBR layer prepared, be then deposited with bonding metal layer, additionally the biggest with Sapphire Substrate slice, thin piece
It is deposited with the bonding metal layer of same thickness on little silicon chip or copper sheet, the first step will be completed and to the 5th step process and be deposited with bonding
The Sapphire Substrate slice, thin piece of metal level and evaporation have an equal amount of silicon chip of same thickness bonding metal layer or copper sheet to exist
It is bonded together in Bonding machine；
7th step, in the Bonding machine of the 6th step after bonding, uses laser lift-off technique by Sapphire Substrate slice, thin piece
Substrate strips down from epitaxial layer, then carries out gluing, exposed and developed, then deposited by electron beam evaporation platform evaporation N electrode,
After by useless metal removal, be finally completed the preparation of vertical UV LED chip.
Above-mentioned a kind of vertical UV LED chip, involved raw material is obtained by known approach.
The beneficial effects of the utility model are: compared with prior art, and the utility model has following prominent substantive distinguishing features
And marked improvement:
(1) main substantive distinguishing features of the present utility model is: DBR layer and Ni/Ag metal current extending combine group
Become high reflectivity mirror, utilize DBR layer to instead of the metallic reflector to ultraviolet light with absorption, directly increase
Luminous efficiency, overcomes the metallic reflector absorption to light in prior art, improves the luminescence of vertical UV LED chip
Brightness；And 2～10 P electrode plugs are deposited with on metal current extending, contribute to the extension of electric current, further
Increase LED chip brightness.
(2) the P electrode plug in the utility model and N electrode are all to be made up of Cr/Al/Ti/Au, this P electrode plug and N
Electrode all has reflex.
(3) preparation technology of the present utility model is simple, and production cost is low.
Accompanying drawing explanation
With embodiment, the utility model is further illustrated below in conjunction with the accompanying drawings.
Fig. 1 is the structural representation of the utility model a kind of vertical UV LED chip.
In figure, 1.N type epitaxial layer, 2. MQW, 3.P type epitaxial layer, 4.Ni/Ag metal current extending, 5.DBR
Layer, 6.P electrode plug, 7. bond wire Cr layer a, 8. bond wire Au layer a, 9. bond wire Au layer b, 10. bonding
Metal Cr layer b, 11. silicon chips, 12.N electrode.
Detailed description of the invention
Embodiment illustrated in fig. 1 shows, the composition of the utility model a kind of vertical UV LED chip include N-type epitaxy layer 1,
MQW 2, p-type epitaxial layer 3, Ni/Ag metal current extending 4,5, three P electrode plugs 6 of DBR layer, bonding gold
Belong to Cr layer a7, bond wire Au layer a8, bond wire Au layer b9, bond wire Cr layer b10, silicon chip 11 and N
Electrode 12；Above layers order immediately is: N-type epitaxy layer 1 immediately multiple quantum well layer 2, multiple quantum well layer 2 immediately P
Type epitaxial layer 3, p-type epitaxial layer 3 immediately Ni/Ag metal current extending 4, Ni/Ag metal current extending 4 is immediately
DBR layer 5, DBR layer 5 immediately bond wire Cr layer a7, bond wire Cr layer a7 immediately bond wire Au layer a8, key
Alloy belongs to Au layer a8 immediately bond wire Au layer b9, bond wire Au layer b9 immediately bond wire Cr layer b10, bonding
Metal Cr layer b10 immediately silicon chip 11, three P electrode plugs 6 are prepared and are embedded in again on Ni/Ag metal current extending 4
In DBR layer 5, and the thickness of P electrode plug 6 is identical with the thickness of DBR layer 5, N electrode 12 the most immediately N-type epitaxy layer
Middle face on 1.
Embodiment 1
A kind of vertical UV LED chip of the present embodiment constitute include N-type epitaxy layer 1, MQW 2, p-type epitaxial layer 3,
Ni/Ag metal current extending 4, DBR layer 5, P electrode plug 6, bond wire Cr layer a7, bond wire Au layer a8,
Bond wire Au layer b9, bond wire Cr layer b10, silicon chip 11 and N electrode 12；Above layers order immediately is:
N-type epitaxy layer 1 immediately multiple quantum well layer 2, multiple quantum well layer 2 immediately p-type epitaxial layer 3, p-type epitaxial layer 3 immediately Ni/Ag
Metal current extending 4, Ni/Ag metal current extending 4 immediately DBR layer 5, DBR layer 5 immediately bond wire Cr layer
A7, bond wire Cr layer a7 immediately bond wire Au layer a8, bond wire Au layer a8 immediately bond wire Au layer b9,
Bond wire Au layer b9 immediately bond wire Cr layer b10, bond wire Cr layer b10 immediately silicon chip 11, P electrode plug 6
Preparation is embedded in again in DBR layer 5 on Ni/Ag metal current extending 4, and the thickness of P electrode plug 6 and DBR
The thickness of layer 5 is identical, Middle face in N electrode 12 the most immediately N-type epitaxy layer 1.Wherein, Ni/Ag metal current extending
The thickness of the Ni in 4 isThe thickness of Ag isDBR layer 5 by a layer thickness isSiO2, then divide
Jiao Ti not cover the TiO of 4 layers2And SiO2Constitute, every layer of TiO2Thickness beEvery layer of SiO2Thickness beP electrode plug 6 is two, is all to be made up of Cr/Al/Ti/Au, and wherein, Cr thickness isAl thickness isTi thickness isChange along with the change of DBR layer 5 thickness with the thickness of Au；Bond wire Cr layer a7
With the thickness of Cr in bond wire Cr layer b10 it isAu in bond wire Au layer a8 and bond wire Au layer b9
Thickness be 1 μm；N electrode 12 is to be made up of Cr/Al/Ti/Au, and wherein, Cr thickness isAl thickness is
Ti thickness isWith Au thickness it is
Embodiment 2
Except as it is shown in figure 1, in addition to P electrode plug 6 is three, other are with embodiment 1.
Embodiment 3
Except Ni/Ag metal current extending 4, wherein the thickness of Ni isThe thickness of Ag isDBR layer 5 is by one
Layer thickness isSiO2, the most alternately cover the TiO of 12 layers2And SiO2Constitute, every layer of TiO2Thickness
It isEvery layer of SiO2Thickness beP electrode plug 6 is six, is all to be made up of Cr/Al/Ti/Au,
Wherein, Cr thickness isAl thickness isTi thickness isWith the thickness of Au along with DBR layer 5 thickness
Change and change；In bond wire Cr layer a7 and bond wire Cr layer b10, the thickness of Cr isBond wire Au
In layer a8 and bond wire Au layer b9, the thickness of Au is 3 μm；N electrode 12 is to be made up of Cr/Al/Ti/Au, wherein,
Cr thickness isAl thickness isTi thickness isWith Au thickness it isOutside, other are with implementing
Example 1.
Embodiment 4
Except Ni/Ag metal current extending 4, wherein the thickness of Ni isThe thickness of Ag isDBR layer 5 is by one
Layer thickness isSiO2, the most alternately cover the TiO of 20 layers2And SiO2Constitute, every layer of TiO2Thickness
It isEvery layer of SiO2Thickness beP electrode plug 6 is ten, is all to be made up of Cr/Al/Ti/Au,
Wherein, Cr thickness isAl thickness isTi thickness isThick along with DBR layer 5 with the thickness of Au
Degree change and change；In bond wire Cr layer a7 and bond wire Cr layer b10, the thickness of Cr isBonding gold
Belonging to the thickness of Au in Au layer a8 and bond wire Au layer b9 is 5 μm；N electrode 12 is to be made up of Cr/Al/Ti/Au,
Wherein, Cr thickness isAl thickness isTi thickness isWith Au thickness it isOutside, its
He is with embodiment 1.
Raw material involved in above-described embodiment is obtained by known approach.
Claims (7)
1. a vertical UV LED chip, it is characterised in that: include N-type epitaxy layer, MQW, p-type epitaxial layer, Ni/Ag metal current extending, DBR layer, P electrode plug, bond wire Cr layer a, bond wire Au layer a, bond wire Au layer b, bond wire Cr layer b, silicon chip and N electrode；Above layers order immediately is: N-type epitaxy layer immediately multiple quantum well layer, multiple quantum well layer immediately p-type epitaxial layer, p-type epitaxial layers proximate Ni/Ag metal current extending, Ni/Ag metal current extending immediately DBR layer, DBR layer immediately bond wire Cr layer a, bond wire Cr layer a immediately bond wire Au layer a, bond wire Au layer a immediately bond wire Au layer b, bond wire Au layer b immediately bond wire Cr layer b, bond wire Cr layer b immediately silicon chip, the preparation of P electrode plug is embedded in again in DBR layer on Ni/Ag metal current extending, and the thickness of P electrode plug is identical with the thickness of DBR layer, Middle face in N electrode the most immediately N-type epitaxy layer.
A kind of vertical UV LED chip, it is characterised in that: described Ni/Ag metal current extending, wherein the thickness of Ni is 5～10, and the thickness of Ag is 10～40.
A kind of vertical UV LED chip, it is characterised in that: described DBR layer, by the SiO that a layer thickness is 4200～44002, the most alternately cover the TiO of 4～20 layers2And SiO2Constitute, every layer of TiO2Thickness be 278～348, every layer of SiO2Thickness be 477～596.
A kind of vertical UV LED chip, it is characterized in that: described P electrode plug is 2～10, it is to be made up of Cr/Al/Ti/Au, wherein, Cr thickness be 10～100, Al thickness be 1000～3000, Ti thickness be that the thickness of 1000～3000 and Au changes along with the change of DBR layer thickness.
A kind of vertical UV LED chip, it is characterised in that: in described bond wire Cr layer a and bond wire Cr layer b, the thickness of Cr is 10～100.
A kind of vertical UV LED chip, it is characterised in that: in described bond wire Au layer a and bond wire Au layer b, the thickness of Au is 1～5 μm.
A kind of vertical UV LED chip, it is characterized in that: described N electrode is to be made up of Cr/Al/Ti/Au, wherein, Cr thickness be 10～100, Al thickness be 1000～3000, Ti thickness be 1000～3000 and Au thickness be 5000～10000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620254324.2U CN205428984U (en) | 2016-03-30 | 2016-03-30 | Perpendicular ultraviolet LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620254324.2U CN205428984U (en) | 2016-03-30 | 2016-03-30 | Perpendicular ultraviolet LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205428984U true CN205428984U (en) | 2016-08-03 |
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ID=56521780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620254324.2U Expired - Fee Related CN205428984U (en) | 2016-03-30 | 2016-03-30 | Perpendicular ultraviolet LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205428984U (en) |
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2016
- 2016-03-30 CN CN201620254324.2U patent/CN205428984U/en not_active Expired - Fee Related
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160803 |
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| CF01 | Termination of patent right due to non-payment of annual fee |