CN104241511B - Method for manufacturing high-brightness flip ultraviolet LED chips - Google Patents
Method for manufacturing high-brightness flip ultraviolet LED chips Download PDFInfo
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- CN104241511B CN104241511B CN201410497803.2A CN201410497803A CN104241511B CN 104241511 B CN104241511 B CN 104241511B CN 201410497803 A CN201410497803 A CN 201410497803A CN 104241511 B CN104241511 B CN 104241511B
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- 238000001704 evaporation Methods 0.000 claims description 61
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a method for manufacturing high-brightness flip ultraviolet LED chips. The method has the advantages that the external quantum efficiency of the ultraviolet LED chips and the brightness of the chips can be improved, and contact voltages of the chips can be reduced; Ni/Ag/Al combined reflecting mirrors with high ultraviolet reflectance replace the traditional thick Ag reflecting mirrors, accordingly, the high-brightness flip ultraviolet LED chips are high in ultraviolet reflectance, and reflecting effects of the high-brightness flip ultraviolet LED chips are superior to reflecting effects of the Ag reflecting mirrors in deep ultraviolet regions; ultra-thin Ni/Ag of the high-brightness ultraviolet LED chips can be in ohmic contact with type-P gallium nitride after the ultra-thin Ni/Ag are annealed, accordingly, the contact voltages of the flip chips can be reduced, ultraviolet absorption can be reduced as compared with the traditional thick Ag reflecting mirrors, and the brightness of the chips can be improved.
Description
Technical field
The invention belongs to LED chip preparing technical field, relate generally to a kind of high brightness upside-down mounting UV LED chip preparation side
Method.
Background technology
With the development of LED application, because its spectral region is wider, (emission wavelength can cover 210-400nm ripple to ultraviolet LED
Section), more energy efficient, and do not contain noxious substance hydrargyrum, there is the incomparable advantage of other traditional UV sources, be widely used
Many aspects in life, such as ultraviolet disinfection, UV cured, optical pickocff, ultraviolet authentication, body fluid detection
With fields such as analyses.At present, the technical bottleneck of ultraviolet LED is mainly less efficient.Wavelength is less than to the chip of 365nm, purple
The output of outer LED is only the 5%-8% of input power；When wavelength is for more than 385nm, the efficiency of purple LED has carried
Height, but also only have the 15% of input power.
Flip LED chips can effectively improve the brightness of LED chip.Traditional flip-chip is based on blue chip, main
If forming flip-chip after being bound by chip and silicon substrate, then carry out Flip-Chip Using using formal dress technique.
But the thick reflecting mirror of formation Ag material is higher to visible reflectance in process, and to ultraviolet light (especially deep ultraviolet
Light) there is larger absorption it is difficult to effectively improve the brightness of ultraviolet LED.And, it is mainly P electricity during conventional flip chip electrode design
Pole and N electrode interval occurs, one employ when being and bind using eutectic plant stannum ball technique after carry out eutectic welding；Two is Jin Yujin
It is directly bound bonding, above all binding point requirements to binding substrate are higher, typically make suitable binding on a silicon substrate
It is bonded on silicon substrate, then according to formal dress technique carries out Flip-Chip Using after point.Therefore, traditional flip-chip in industry
Technique is not suitable for ultraviolet LED.
Content of the invention
The present invention proposes a kind of high brightness upside-down mounting UV LED chip preparation method, it is possible to increase the outer amount of UV LED chip
Sub- efficiency, improves chip brightness, reduces chip contact voltage.
The solution of the present invention is as follows：
A kind of high brightness upside-down mounting UV LED chip preparation method, mainly includes following link：
(1) the p-type gallium nitride layer subregion to ultraviolet LED epitaxial wafer surface and its under mqw light emitting layer carve
Erosion, until expose n type gallium nitride layer；
(2) it is exposed so that photoresist is covered in after exposure imaging in p-type gallium nitride surface spin coating photoresist and to it
Region within all etch areas and connect with all etch areas 10 microns (spacing within 10 microns, mainly for
Avoid being deposited with the N plug body of formation and p-type gallium nitride layer UNICOM later), then evaporated film Ni/Ag layer, Ni film and Ag thickness
Degree sum is not more thanWherein Ni film thickness requiresEvaporation rate requiresAg thickness
Degree requiresEvaporation rate requiresTo evaporation Ni/Ag thin film after epitaxial wafer peeled off and
Go removing glue, p-type gallium nitride surface forms Ni/Ag cover layer, 370～420 DEG C of 5～10min that carry out annealing under nitrogen environmental protection,
Form p-type ohmic contact layer；Then make same photoetching process, then evaporating Al film reflecting layer, Al film thickness requiresEvaporation rate requiresPeeled off again and removed photoresist, be formed as that there is high ultraviolet reflectivity
P-type Ohmic contact Ni/Ag/Al thin film；
(3) ultraviolet LED epitaxial wafer surface at this moment deposits layer of silicon dioxide as insulating barrier, along former etching path pair
Insulating barrier carries out corrosion and forms N electrode through hole, and is individually corroded to p-type nitrogen in another region in ultraviolet LED epitaxial wafer surface
Change gallium layer and form P electrode through hole；
(4) it is deposited with formation N metal closures, P metal closures respectively in N electrode through hole, P electrode through hole；
(5) it is directed to N metal closures and P metal closures, evaporation forms N binding electrode and P binding electrode, evaporated metal material respectively
Using Au/Sn or Ag/Sn；
(6) metal annealing fusion, nitrogen protection annealing, that is, prepare and complete upside-down mounting UV LED chip.
Based on above-mentioned basic solution, the present invention also does following optimization and limits：
Step (1) performs etching operation with inductively coupled plasma etching technology.
Step (3) is corroded to insulating barrier using BOE solution, and the key component of described BOE solution and proportioning are HF：
NH4F=1：9.
The evaporation process of step (4) evaporates formation metal closures successively using Cr/Ti/Al/Ti/Au.
During the evaporation of step (5), Au or Ag, form multicycle structure with Sn thin film alternating deposit.
According to above scheme, such high brightness upside-down mounting UV LED chip structure can be obtained, including ultraviolet LED epitaxial wafer；
It is characterized in that：The surface of ultraviolet LED epitaxial wafer has been sequentially depositing p-type Ohmic contact Ni/Ag/Al thin film and titanium dioxide
The insulating barrier of silicon material；In described p-type Ohmic contact Ni/Ag/Al thin film, Ni film thickness isAg film thickness requiresNi film is not more than with Ag film thickness sumAl film thicknessFrom silicon dioxide material
Insulating barrier to the n type gallium nitride layer of ultraviolet LED epitaxial wafer be formed with etched channels at least, be deposited with this etched channels
It is formed with N metal closures；It is formed with least one from the insulating barrier of silicon dioxide material to the p-type gallium nitride layer of ultraviolet LED epitaxial wafer
Place's etched channels, at this etched channels, evaporation is formed with P metal closures；It is deposited with formation in N metal closures and P metal closures surface respectively
There are N binding electrode and P binding electrode, binding electrode material is Au/Sn or Ag/Sn.
Material is the binding electrode of Au/Sn or Ag/Sn, can be that Au or Ag is many with what Sn thin film alternating deposit was formed
Periodic structure.
Ultraviolet LED epitaxial wafer surface common at present is mostly p-type gallium nitride layer, for blue light epitaxial wafer, its surface
Ohmic contact can be formed using p-type indium gallium nitrogen or using N-type indium gallium nitrogen formation tunneling effect reduction chip voltage, but ultraviolet
It is less that LED considers that extinction problem uses.Therefore, " surface of ultraviolet LED epitaxial wafer " referred to herein refers generally to p-type gallium nitride
Layer, but if it is determined that the surface of ultraviolet LED epitaxial wafer is p-type indium gallium nitrogen layer or N-type indium gallium nitrogen, then implement according to such scheme
Technology also should be regarded as falling into protection scope of the present invention.
Ni/Ag/Al combined films evaporation thickness requirement is not more than with Ag film thickness sum for Ni filmNi thickness simultaneously
Degree is less thanAg film thickness is more thanAl film thickness is more thanEvaporation rate requires to be more thanNi/
When Ag film thickness is larger, can not completely fuse after annealing, form Ni/Ag reflecting mirror, can have certain absorption to ultraviolet light, impact
The reflecting effect of Al reflecting mirror, if thickness is less, is difficult after annealing to form good Ohmic contact with p-type gallium nitride, preparation
Chip voltage is higher, requires the evaporation rate of Ni as little as possible in preparing simultaneously, reduces the absorption to ultraviolet light for the Ni film.Ultra-thin
Al film have certain transmission effects to ultraviolet light, therefore Al film thickness can not be ultra-thin, prepares in Al membrane process simultaneously and requires Al
Evaporation rate as big as possible, it is to avoid the oxidation of Al in preparation process, impact Al film mirror effect, reduce anti-to ultraviolet light
Penetrate.
Beneficial effects of the present invention are as follows：
The present invention is to evaporate Ni/Ag thin film in p-type gallium nitride surface, evaporates Al thin film under nitrogen environmental protection after annealing.
Good Ohmic contact can be formed with p-type gallium nitride after the annealing of Ni/Ag film layer, good current expansion effect can be played,
Reduce the contact voltage of chip.Al film has more than 85% reflecting effect to ultraviolet light, with Al film as upside-down mounting ultraviolet LED core
The reflecting layer of piece, it is possible to reduce the absorption to ultraviolet light for the material, improves the extraction yield to ultraviolet light for the LED chip.
The Ni/Ag/Al high ultraviolet reflectivity reflecting mirror of combination replaces traditional thick Ag reflecting mirror, to the reflectance of ultraviolet light relatively
Height, much larger than Ag mirror in the reflecting effect of dark purple exterior domain, can form and p-type gallium nitride using after ultra-thin Ni/Ag annealing
Ohmic contact, reduce flip-chip contact voltage, decrease the absorption to ultraviolet light for traditional thick Ag reflecting mirror, that is, simultaneously
Improve the brightness of chip.
Further design is optimized to the binding technology for preparing electrode parameter of flip-chip in the present invention, directly adopts
Au/Sn or Ag/Sn material forms binding electrode, and chip package can carry out flip-chip and encapsulation base using eutectic solder technology
Plate directly welds, and (need not reuse gold thread weldering after being first bound to Si substrate using gold thread solder technology after traditional first die bond
The encapsulation technology connecing), simplify packaging technology.Flip-chip and the direct eutectic of support weld simultaneously, reduce chip and support
Between thermal resistance, be conducive to radiating during chip operation, improve the reliability of UV LED chip.
Brief description
Fig. 1 is the upside-down mounting UV LED chip structure chart of invention.
Fig. 2 is an implementing procedure figure of the present invention.
Specific embodiment
Embodiment one
Fig. 1 is the upside-down mounting UV LED chip structure chart of the present invention, and its manufacturing process is as shown in Figure 2：Skill is etched using ICP
Art carries out the ultraviolet gallium nitride etching of low damage, and p-type Ohmic contact Ni/Ag/Al carrying out high reflectance with evaporation coating technique is thin
Film preparation and P, N binding electrode A u/Sn film layer preparation, are entered with PECVD deposition silicon dioxide insulating layer and using BOE to it
Row corrosion forms P, N electrode through hole.
The most preferred embodiment of preparation technology given below：
1st, by ultraviolet LED epitaxial wafer chloroazotic acid (HNO3：HCl=1：3) it is surface-treated, 10 minutes time, deionization
Water bath dries；
2nd, the ultraviolet gallium nitride lithographic technique that ICP equipment carries out low damage, epitaxial wafer subregion p-type gallium nitride layer are put into
And multiple quantum well light emitting layer performs etching below, expose n type gallium nitride layer, etching uses Cl2Flow is 50sccm,
Antenna RF power is 150W, and Bias RF power is 40W, 1.3 μm of etching depth；
3rd, film vapor deposition machine carries out Ni/Ag thin film evaporation, and Ni evaporation rate isEvaporation thicknessAg evaporates
Speed isEvaporation thicknessDuring evaporation, vacuum is higher than 2.0 × 10-6Torr；
4th, nitrogen protection annealing, 380 DEG C of annealing temperature, annealing time 5min；
5th, film vapor deposition machine carries out Al thin film evaporation, and evaporation rate isEvaporation thicknessTrue during evaporation
Reciprocal of duty cycle is higher than 2.0 × 10-6Torr；
6th, PECVD deposition silicon dioxide insulating layer, deposition uses material (SiH45%/N2) flow be 300sccm, N2O flows
Measure as 300sccm, RF power is 100W, 210 DEG C of depositing temperature, deposit thickness 230nm；
7th, use BOE solution (HF：NH4F=1：9) silicon oxide needing etching to part corrodes, etching time
30sec, forms PN electrode through hole, to meet the contact that PN binding layer is with gallium nitride layer；
8th, film vapor deposition machine carries out the evaporation of P, N metal closures, and evaporated metal material is Cr/Ti/Al/Ti/Au, Cr evaporation rate
ForThickness isTi evaporation rate isThickness isThe evaporation rate of Al isEvaporation thicknessThe evaporation rate of two layers of Ti isEvaporating thickness isThe evaporation of Au
Speed isEvaporation thicknessDuring evaporation, vacuum is higher than 2.0 × 10-6Torr；
9th, film vapor deposition machine carries out P, N binding electrode evaporation, and it is heavy that binding electrode material replaces for Au/Sn, Au and Sn thin film
Long-pending formation multicycle structure, amount of cycles is 5, and in each cycle, Au film evaporation thickness isEvaporation rate Sn thin film evaporation thickness isEvaporation rate isDuring evaporation, vacuum is above 2.0 × 10- 6Torr；
10th, metal annealing fusion, nitrogen protection annealing, 280 DEG C of annealing temperature, annealing time 5min；Upside-down mounting ultraviolet LED core
Piece machines.
The high brightness upside-down mounting UV LED chip that the present invention is obtained, can be directly bound and complete flip-chip in stent substrate
Welding.
Embodiment two
Film vapor deposition machine carries out Ni/Ag thin film evaporation, and Ni evaporation rate isEvaporation thicknessAg evaporates
Speed isEvaporation thicknessDuring evaporation, vacuum is higher than 2.0 × 10-6Torr；Nitrogen protection annealing, annealing temperature
400 DEG C of degree, annealing time 8min；Film vapor deposition machine carries out Al thin film evaporation, and evaporation rate isEvaporation thicknessRemaining technique is all identical with embodiment one technique, can prepare the upside-down mounting UV LED chip of high brightness, and can be straight
Connect and using eutectic solder technology, it is directly welded.
Embodiment three
Film vapor deposition machine carries out Ni/Ag thin film evaporation, and Ni evaporation rate isEvaporation thicknessAg evaporates
Speed isEvaporation thicknessDuring evaporation, vacuum is higher than 2.0 × 10-6Torr；Nitrogen protection annealing, annealing temperature
410 DEG C of degree, annealing time 10min；Film vapor deposition machine carries out Al thin film evaporation, and evaporation rate isEvaporation thicknessRemaining technique is all identical with embodiment one technique, can prepare the upside-down mounting UV LED chip of high brightness, and can be straight
Connect and using eutectic solder technology, it is directly welded.
40*40mil using the present invention program preparation2The UV LED chip of model peak wavelength 375nm, luminous power
90mw, voltage 3.5V；The chip of peak wavelength 385nm, luminous power is 155mw, voltage 3.3V；The chip of peak wavelength 400nm,
Luminous power is 250mw, voltage 3.2V.And use the ultraviolet LED core that the peak wavelength that traditional scheme prepares similar model is 375nm
Piece, luminous power 80mw, voltage 3.6V；The chip of peak wavelength 385nm, luminous power is 150mw, voltage 3.4V；Peak wavelength
The chip of 400nm, luminous power 250mw, voltage 3.3V.
Find that by voltage-contrast the LED chip voltage of the present invention program preparation is low compared with traditional die voltage, by light work(
Rate contrast finds that the LED chip brightness of this programme preparation is higher, shortens with peak wavelength, raising brightness is bigger, shows this
The film layer of bright scheme preparation, the reflection of more favourable ultraviolet light, be conducive to upside-down mounting UV LED chip to improve brightness, reduce voltage.With
When the program prepare chip can directly eutectic in base plate for packaging, it is to avoid the complicated technology of bonding wire after first die bond traditionally.
It is emphasized that giving the design parameter that can reach preferred technique effect in above example, but these
Design parameter is not construed as the restriction to the claims in the present invention protection domain.The principle of the present invention is elaborated in description, this
Skilled person it should be realized that under basic scheme, each design parameter is done appropriateness adjustment remain able to substantially real
The existing purpose of the present invention.
Claims (5)
1. a kind of high brightness upside-down mounting UV LED chip preparation method, mainly includes following link：
(1) the p-type gallium nitride layer subregion to ultraviolet LED epitaxial wafer surface and its under mqw light emitting layer perform etching,
Until exposing n type gallium nitride layer；
(2) be exposed in p-type gallium nitride surface spin coating photoresist and to it so that after exposure imaging photoresist be covered in all
Region, then evaporated film Ni/Ag layer, Ni film and Ag film within etch areas and connect with all etch areas 10 microns
Thickness sum is not more thanWherein Ni film thickness requiresEvaporation rate requires Ag thickness
Degree requiresEvaporation rate requiresEpitaxial wafer after evaporation Ni/Ag thin film is peeled off and is gone
Removing glue, p-type gallium nitride surface forms Ni/Ag cover layer, 370～420 DEG C of 5～10min that carry out annealing, shape under nitrogen environmental protection
Become p-type ohmic contact layer；Then make same photoetching process, then evaporating Al film reflecting layer, Al film thickness requiresEvaporation rate requiresPeeled off again and removed photoresist, be formed as that there is high ultraviolet reflectivity
P-type Ohmic contact Ni/Ag/Al thin film；
(3) ultraviolet LED epitaxial wafer surface at this moment deposits layer of silicon dioxide as insulating barrier, along former etching path to insulation
Layer carries out corrosion and forms N electrode through hole, and is individually corroded to p-type gallium nitride in another region in ultraviolet LED epitaxial wafer surface
Layer forms P electrode through hole；
(4) it is deposited with formation N metal closures, P metal closures respectively in N electrode through hole, P electrode through hole；
(5) it is directed to N metal closures and P metal closures, evaporation forms N binding electrode and P binding electrode respectively, evaporated metal material adopts
Au/Sn or Ag/Sn；
(6) metal annealing fusion, nitrogen protection annealing, that is, prepare and complete upside-down mounting UV LED chip.
2. high brightness upside-down mounting UV LED chip preparation method according to claim 1 it is characterised in that：Step (1) is used
Inductively coupled plasma etching technology performs etching operation.
3. high brightness upside-down mounting UV LED chip preparation method according to claim 1 it is characterised in that：Step (3) adopts
BOE solution corrodes to insulating barrier, and the key component of described BOE solution and proportioning are HF：NH4F=1：9.
4. high brightness upside-down mounting UV LED chip preparation method according to claim 1 it is characterised in that：The steaming of step (4)
Depositing process evaporates formation metal closures successively using Cr/Ti/Al/Ti/Au.
5. high brightness upside-down mounting UV LED chip preparation method according to claim 1 it is characterised in that：The steaming of step (5)
During plating, Au or Ag, form multicycle structure with Sn thin film alternating deposit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410497803.2A CN104241511B (en) | 2014-09-25 | 2014-09-25 | Method for manufacturing high-brightness flip ultraviolet LED chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410497803.2A CN104241511B (en) | 2014-09-25 | 2014-09-25 | Method for manufacturing high-brightness flip ultraviolet LED chips |
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| Publication Number | Publication Date |
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| CN104241511A CN104241511A (en) | 2014-12-24 |
| CN104241511B true CN104241511B (en) | 2017-02-15 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015172733A1 (en) * | 2014-05-15 | 2015-11-19 | The Hong Kong University Of Science And Technology | Gallium nitride flip-chip light emitting diode |
| CN104810460A (en) * | 2015-03-31 | 2015-07-29 | 长治市华光光电科技集团有限公司 | Back multilayer reflecting metal layer for increasing brightness of blue light chip and preparation method of metal layer |
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