CN203746848U

CN203746848U - Positive packaging LED chip of N-electrode extension-wire dotted distribution

Info

Publication number: CN203746848U
Application number: CN201420037378.4U
Authority: CN
Inventors: 李瑶; 吴东海; 李志翔
Original assignee: NANTONG TONGFANG SEMICONDUCTOR CO Ltd
Current assignee: NANTONG TONGFANG SEMICONDUCTOR CO Ltd
Priority date: 2014-01-22
Filing date: 2014-01-22
Publication date: 2014-07-30
Anticipated expiration: 2024-01-22

Abstract

A positive packaging LED chip of N-electrode extension-wire dotted distribution relates to the semiconductor luminescence technology field. The chip of the utility model comprises a substrate, an N-type GaN layer, a luminescent layer, a P-type GaN layer and a transparent conducting layer which are successively arranged from bottom to top. A P-type electrode is arranged on the transparent conducting layer of one end of the chip. An N-type electrode is arranged on the N-type GaN layer of the other end of the chip. The structure is characterized in that one or more holes which are arranged vertically and downwardly on one of the N-type electrode of an upper surface of the chip is on the N-type GaN layer and is served as an N-type extension wire; metal is arranged in the hole and is connected to the N-type electrode; the metal, the transparent conducting layer and an inner wall of the hole are isolated by using an insulating layer. Compared to the prior art, by using the chip of the utility model, a voltage is reduced and simultaneously chip brightness can be increased, and light out-coupling efficiency is increased too.

Description

A kind of packed LED chip of N electrode line stretcher spot distribution

Technical field

The utility model relates to semiconductor light emitting technical field, particularly the packed LED chip of N electrode line stretcher spot distribution.

Background technology

Semiconductor light-emitting-diode has little, the photochromic variable color temperature of volume, high-luminous-efficiency, and the infrared proportion of ultraviolet is low, and the advantages such as good reliability meet energy-conserving and environment-protective trend.Be widely used in industry backlight, progressively open up markets and illumination is proper, have higher requirement for voltage and the brightness of semiconductor light-emitting-diode.Popular chip mostly is positive assembling structure in the market, also has and covers on a small quantity crystalline substance and thin-film LED.Cover crystalline substance and thin-film LED manufacture craft relative difficult, cost is relatively high.Formal dress chip preparing process is relatively ripe and simple, and cost is lower.In prior art, the current spread of positive cartridge chip is unsatisfactory, causes chip voltage higher, and same current drives the lower electric energy consuming high, does not have energy-saving effect.So at present positive cartridge chip all adopts electrode is stretched and is diffused in chip surface with line stretcher finger form, particularly N-type electrode.So, although solved current spread problem, when lower voltage, chip brightness also declines thereupon.Its reason is, one: N electrode line stretcher is that to lose part light-emitting area be cost; Two: this electrode line stretcher is placed in chip internal or outside all can absorption portion lateral emitting, causes chip brightness to decline thereupon.

Summary of the invention

For above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide a kind of packed LED chip of N electrode line stretcher spot distribution.It can improve chip brightness in reducing voltage, increases light emission rate.

For reaching above-mentioned utility model object, the technical solution of the utility model realizes as follows:

A packed LED chip for N electrode line stretcher spot distribution, it comprises the substrate, N-type GaN layer, luminescent layer, P type GaN layer and the transparency conducting layer that are arranged in order from bottom to up.P type electrode is set on the transparency conducting layer of chip one end, on the N-type GaN of chip other end layer, N-type electrode is set.Its design feature is, on described chip upper surface, one end of being positioned at N-type electrode offer vertically downward one or more hole to N-type GaN layer as N electrode line stretcher, in described hole, be provided with metal and be connected with N-type electrode, between metal and transparency conducting layer and hole inwall, adopt insulating barrier isolated.

In above-mentioned packed LED chip, the aperture in described hole is 5-10um.

In above-mentioned packed LED chip, the thickness of described insulating barrier is 1200-2400 dust, and insulating barrier adopts SiO2 or aluminium oxide.

N electrode line stretcher as above becomes the preparation method of the packed LED chip of spot distribution, and its method step is:

1) utilize metal organic-matter chemical vapor deposition techniques at substrate top surface epitaxial growth N-type successively GaN layer, luminescent layer and P type GaN layer;

2) utilize exposure technique and ICP technology to etch the hole at N-type GaN layer ohmic contact regions and N electrode line stretcher position;

3) utilize evaporation coating technique to prepare transparency conducting layer and utilize exposure technique and lithographic technique is prepared P type GaN layer ohmic contact regions;

4) utilize PECVD technology and exposure and lithographic technique to prepare insulating barrier;

5) utilize evaporation and exposure technique to prepare N-type electrode and P type electrode;

6) by the LED device completing from bottom surface attenuate;

7) utilize method of evaporating to make ODR reflector or DBR reflector;

8) become single crystal grain by laser cutting splitting.

The utility model is owing to having adopted said structure, avoid in prior art, P type GaN layer and luminescent layer under whole N electrode line stretcher all being etched away, and just offer one or more perforate in N electrode line stretcher position, bore dia is that 5-10um is suitable with N electrode line stretcher width, thereby reduce etching area, reduced as far as possible the damage to light-emitting area.In N electrode extending part hole, be provided with that metal is connected to each other and between metal and transparency conducting layer and hole inwall, adopt insulating barrier isolated, stop N electrode and the direct conducting of P electrode, thereby metal is connected with N-type electrode.The utility model can effectively improve the CURRENT DISTRIBUTION situation of positive cartridge chip and increase the actual light-emitting area of chip, when reducing voltage, has improved brightness, has increased light emission rate.

Below in conjunction with the drawings and specific embodiments, the utility model is described further.

Brief description of the drawings

Fig. 1 is the utility model structural representation;

Fig. 2 is the structural representation of N electrode line stretcher spot distribution in the utility model.

Embodiment

Referring to Fig. 1, the utility model comprises the substrate 110, N-type GaN layer 120, luminescent layer 130, P type GaN layer 140 and the transparency conducting layer 150 that are arranged in order from bottom to up.P type electrode 190 is set on the transparency conducting layer 150 of chip one end, on the N-type GaN of chip other end layer 120, N-type electrode 170 is set.On chip upper surface, one end of being positioned at N-type electrode 170 offer vertically downward one or more hole 200 to N-type GaN layer 120 as N electrode line stretcher, 200Nei aperture, hole is 5-10um.In hole 200, be provided with metal and be connected with N-type electrode 170, between metal and transparency conducting layer 150 and hole 200 inwalls, adopt insulating barrier 160 isolated.The thickness of insulating barrier 160 is 1200-2400 dust, and insulating barrier 160 adopts SiO2 or aluminium oxide.

Referring in Fig. 1, Fig. 2 shown in arrow, be that the electric current in the utility model chip points to, adopt after the utility model structure, not only CURRENT DISTRIBUTION is even, and reduces the loss that light-emitting area is caused.

The utility model N electrode line stretcher becomes the preparation method of the packed LED chip of spot distribution, and its method step is:

Embodiment mono-:

1) utilize metal organic-matter chemical vapor deposition techniques at substrate 110 upper surfaces epitaxial growth N-type successively GaN layer 120, luminescent layer 130 and P type GaN layer 140;

2) utilize exposure technique and ICP technology to etch the hole 200 at N-type GaN layer 120 ohmic contact regions and N electrode line stretcher position, 200Nei aperture, hole is 5um;

3) utilize evaporation coating technique to prepare transparency conducting layer 150 and utilize exposure technique and lithographic technique is prepared P type GaN layer 140 ohmic contact regions;

4) utilize PECVD technology and exposure and lithographic technique to prepare insulating barrier 160, the thickness of insulating barrier 160 is 1200 dusts;

5) utilize evaporation and exposure technique to prepare N-type electrode 170 and P type electrode 190;

6) by the LED device completing from bottom surface attenuate;

7) utilize method of evaporating to make ODR reflector or DBR reflector;

8) become single crystal grain by laser cutting splitting.

Embodiment bis-:

2) utilize exposure technique and ICP technology to etch the hole 200 at N-type GaN layer 120 ohmic contact regions and N electrode line stretcher position, 200Nei aperture, hole is 8um;

4) utilize PECVD technology and exposure and lithographic technique to prepare insulating barrier 160, the thickness of insulating barrier 160 is 1800 dusts;

6) by the LED device completing from bottom surface attenuate;

7) utilize method of evaporating to make ODR reflector or DBR reflector;

8) become single crystal grain by laser cutting splitting.

Embodiment tri-:

2) utilize exposure technique and ICP technology to etch the hole 200 at N-type GaN layer 120 ohmic contact regions and N electrode line stretcher position, 200Nei aperture, hole is 10um;

4) utilize PECVD technology and exposure and lithographic technique to prepare insulating barrier 160, the thickness of insulating barrier 160 is 2400 dusts;

6) by the LED device completing from bottom surface attenuate;

7) utilize method of evaporating to make ODR reflector or DBR reflector;

8) become single crystal grain by laser cutting splitting.

The foregoing is only the one of the utility model embodiment, but do not limit the utility model with this.All within the scope of technical solutions of the utility model, any amendment that those skilled in the art does, be equal to the apparent technical schemes such as replacement, all should belong to the scope of the utility model protection.

Claims

1. the packed LED chip of a N electrode line stretcher spot distribution, it comprises the substrate (110) being arranged in order from bottom to up, N-type GaN layer (120), luminescent layer (130), P type GaN layer (140) and transparency conducting layer (150), on the transparency conducting layer (150) of chip one end, P type electrode (190) is set, N-type electrode (170) is set on the N-type GaN of chip other end layer (120), it is characterized in that: on described chip upper surface, the one end that is positioned at N-type electrode (170) offer vertically downward one or more hole (200) to N-type GaN layer (120) as N electrode line stretcher, in described hole (200), being provided with metal is connected with N-type electrode (170), between metal and transparency conducting layer (150) and hole (200) inwall, adopt insulating barrier (160) isolated.

2. the packed LED chip of N electrode line stretcher spot distribution according to claim 1, is characterized in that: the aperture in described hole (200) is 5-10um.

3. the packed LED chip of N electrode line stretcher spot distribution according to claim 1 and 2, is characterized in that: the thickness of described insulating barrier (160) is 1200-2400 dust, and insulating barrier (160) adopts SiO2 or aluminium oxide.