CN105702820B - The reversed polarity AlGaInP base LED and its manufacturing method of surface covering ITO - Google Patents
The reversed polarity AlGaInP base LED and its manufacturing method of surface covering ITO Download PDFInfo
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- CN105702820B CN105702820B CN201610216232.XA CN201610216232A CN105702820B CN 105702820 B CN105702820 B CN 105702820B CN 201610216232 A CN201610216232 A CN 201610216232A CN 105702820 B CN105702820 B CN 105702820B
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- 239000010931 gold Substances 0.000 claims 3
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Computer Hardware Design (AREA)
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Abstract
Surface covers the reversed polarity AlGaInP base LED and its manufacturing method of ITO, belongs to technical field of semiconductors.N-shaped AlGaInP current extending is replaced using ITO extension current extending, the problem of can not only improving the current expansion uniformity of LED chip, but also eliminate N-shaped AlGaInP current extending extinction, improves light extraction efficiency.Therefore, the service life of reversed polarity AlGaInP base LED can be extended, improve its photoelectric conversion efficiency.The present invention has the advantages that simple process, facilitates production operation.
Description
Technical field
The present invention relates to a kind of surface covering ITO current extending reversed polarity AlGaInP base LED and its manufacturing method,
Belong to technical field of semiconductors.
Background technique
It is a kind of direct band-gap semicondictor with the matched AlGaInP sill of GaAs substrate lattice, by adjusting Al and Ga
Ratio, forbidden bandwidth can change in 1.9eV between 2.3eV.The wave-length coverage of AlGaInP base LED can cover 550nm~
650nm has a wide range of applications in fields such as RGB three primary colours display screen, traffic lights, automobile lamps.
Conventional AlGaInP base LED is that the face p goes out light, and epitaxial layer structure is usual are as follows: it is slow successively to give birth to GaAs on gaas substrates
Rush layer, DBR mirror layer, N-shaped limiting layer, MQW multiple quantum well active layer, p-type limiting layer, p-type GaP Window layer.Due to GaAs
Substrate extinction is needed to be reflected back the light of directive substrate using DBR mirror layer and reduces substrate extinction problem.
Reversed polarity AlGaInP base LED is that the face n goes out light, and epitaxial layer structure is usual are as follows: successively gives birth to GaAs on gaas substrates
Buffer layer, etch stop layers, N-shaped roughened layer, N-shaped current extending, N-shaped limiting layer, MQW multiple quantum well active layer, p-type limitation
Layer, p-type GaP Window layer.By the way that epitaxial layer to be bonded in permanent substrate, then to remove the GaAs temporary substrates of extinction, GaAs slow
Layer and etch stop layers are rushed, realizes that the face n goes out light.ODR reflecting mirror is made between bonded layer and epitaxial layer, and N-shaped is roughened
Layer carries out roughing in surface, light extraction efficiency can be improved 2-5 times.High brightness AlGaInP base LED is mainly reversed polarity knot at present
Structure.
However, the reversed polarity AlGaInP base LED partially short for wavelength, especially wavelength are less than the AlGaInP base of 590nm
LED, since emission wavelength is close to the absorption band edge of AlGaInP material, there is asking for extinction in N-shaped AlGaInP current extending
Topic.The conductivity for showing N-shaped AlGaInP current extending is higher, current expansion is better, and extinction is more serious.
Application No. is the Patent Application Publications of 201410102782.X " to propose that a kind of Window layer is covered with the anti-of tin indium oxide
Polarity AlGaInP light emitting diode construction " it is less than the reversed polarity AlGaInP base LED of 590nm for wavelength, there are one for the structure
Determine drawback.On the one hand, when requiring the face n Window layer band gap width sufficiently wide, it will cause epitaxial growth difficulty；On the other hand, oxygen
Change Window layer of the indium tin with cylinder form through aperture directly to contact with n-type semiconductor layer, it is desirable that the aperture depth of Window layer
Equal to the thickness of Window layer, this is more difficult to control in chip processing procedure.Aperture is too deep, can damage MQW active layer, cause luminous efficiency
Reduction and electric leakage or even dead lamp；Aperture is excessively shallow, and Window layer will affect the electrical contact between tin indium oxide and n-type semiconductor layer.
Summary of the invention
Aiming at the problem that the partially short reversed polarity AlGaInP base LED of above-mentioned wavelength encounters, the present invention proposes a kind of surface covering
The reversed polarity AlGaInP base LED of ITO current extending.
The present invention be disposed in the permanent substrate with back electrode metal bonding layer, ODR reflecting mirror, epitaxial layer,
ITO extends current extending and main electrode；The ODR reflecting mirror is made of metallic reflector interconnected and media coating,
Media coating is connected with epitaxial layer；Metallic reflector is connected with metal bonding layer；Between ITO current extending and epitaxial layer
It is provided with Ohmic contact point；ITO current expansion layer surface is in roughening shape.
The invention has the advantages that: due to replacing N-shaped AlGaInP current extending using ITO extension current extending, both may be used
The problem of improving the current expansion uniformity of LED chip, and eliminating N-shaped AlGaInP current extending extinction, improve out light efficiency
Rate.Therefore, the service life of reversed polarity AlGaInP base LED can be extended, improve its photoelectric conversion efficiency.
Further, ITO current extending roughing in surface shape pattern character size is 5nm~200nm, at the roughing in surface
Reason and the purpose of design of roughening shape pattern character size are to reduce the total reflection of light, as much as possible raising light extraction efficiency.
The epitaxial layer includes: p-GaP Window layer, p-AlGaInP limiting layer, MQW multiple quantum well active layer, n-
AlGaInP limiting layer, n-GaAs ohmic contact layer.Compared with conventional reversed polarity AlGaInP base LED epitaxial structure, in n-
Reduce n-AlGaInP current extending and N-shaped roughened layer between AlGaInP limiting layer, n-GaAs ohmic contact layer.
Media coating in ODR reflecting mirror of the present invention is SiO2、Si3N4、MgF2, in ITO at least any one,
Metallic reflector in ODR reflecting mirror be Ag, Al, Au, AuZn alloy, in AuBe alloy at least any one.
The starting point of the design is the ODR reflecting mirror in order to obtain high reflectance, the media coating and metallic reflector
It may be performed in different combinations.
The present invention is another object is that propose a kind of manufacturer of the reversed polarity AlGaInP base LED chip of surface covering ITO
Method.
The present invention the following steps are included:
1) successively epitaxial growth buffer, etch stop layers, n-GaAs ohmic contact layer, n- on temporary substrates
AlGaInP limiting layer, MQW multiple quantum well active layer, p-AlGaInP limiting layer, p-GaP Window layer form epitaxial wafer；
2) ODR reflecting mirror and metal bonding layer are successively made in the p-GaP Window layer of epitaxial wafer；
3) metal bonding layer is made in permanent substrate front；
4) by the metal bonding layer on the metal bonding layer and permanent substrate on epitaxial wafer, by wafer bonding to permanently
On substrate, the crude product of bonding is formed；
5) temporary substrates, buffer layer and the etch stop layers on the crude product that removal has been bonded, expose n-GaAs ohm
Contact layer；
6) photoetching, evaporation metal, Lift-off produce Ohmic contact point；
7) n-GaAs Ohmic contact layer pattern is etched, the n-GaAs ohmic contact layer below Ohmic contact point is only retained；
8) in n-AlGaInP limiting layer and Ohmic contact point one layer of ITO current extending of disposed thereon, and by ITO electric current
Extension layer surface makees roughening treatment；
9) photoetching, evaporation metal, Lift-off completion main electrode production are carried out in ITO current expansion layer surface；
10) photoetching is carried out in ITO current expansion layer surface, luminous zone surface forms photoetching compound protective layer, only exposes cutting
Road, then etches away the ITO current extending of Cutting Road with ITO etching solution, then etches Cutting Road, and etch depth reaches p-
GaP Window layer；
11) back electrode is made at the permanent substrate back side；
12) cutting, sliver obtain LED chip.
According to the present invention is common process, has the advantages that simple process, facilitates production operation.
In the step 8), ITO current extending roughing in surface shape pattern character size is 5nm~200nm.It is roughened
The surface topography of shape can be obtained by adjusting ito thin film deposition process parameters, or be obtained by wet etchings such as such as concentrated sulfuric acids
, or obtained using dry etching.
Detailed description of the invention
Fig. 1 is to have made the structural schematic diagram of ODR reflecting mirror and metal bonding layer on epitaxial wafer surface in manufacturing process.
Fig. 2 is that the structural schematic diagram after metal bonding layer has been made in permanent substrate in manufacturing process.
Fig. 3 is the reversed polarity AlGaInP base LED chip the schematic diagram of the section structure that surface of the present invention covers ITO.
Fig. 4 is the top view of Fig. 3.
Fig. 5 is the ITO current expansion layer surface canonical form looks of the roughening shape of the present invention of scanning electron microscope shooting.
Specific embodiment
One, it is the structural schematic diagram of preferred embodiment of the present invention in the production process as illustrated in fig. 1 and 2, manufacturing step is as follows:
1, as shown in Figure 1, using MOCVD device in 101 growing epitaxial layers of GaAs temporary substrates, epitaxial layer includes GaAs
Buffer layer 102, GaInP cutoff layer 103, n-GaAs ohmic contact layer 104, n-AlGaInP limiting layer 105, MQW multiple quantum wells have
Active layer 106, p-AlGaInP limiting layer 107, p-GaP Window layer 108.
Wherein 104 preferred thickness of n-GaAs ohmic contact layer is 20nm to 100nm, and doping concentration is 1 × 1019cm-3With
On, doped chemical Si, to form good Ohmic contact with Ohmic contact point 204.
The preferred thickness of p-GaP Window layer 108 is 600nm to 8000nm, and doping concentration is 1 × 1018cm-3More than, doping
Element is Mg, to guarantee the good Ohmic contact in the face p and current expansion ability.
2) the positive p-GaP Window layer 108 of epitaxial wafer is successively cleaned using acetone, isopropanol, deionized water, nitrogen is blown
It is dry, SiO is deposited in p-GaP Window layer2Media coating 109, by spin coating positive photoresist, exposure, exposure mask figure is made in development
Shape, using BOE solution by SiO2Media coating 109 etches conductive hole, is 300nm in 109 surface evaporation thickness of media coating
AuZn and 500nm Al as metallic reflector 110.Metallic reflector 110 can also using Ag, Al, Au, AuZn alloy,
Any one in AuBe alloy or combination.By SiO2Media coating 109 and AuZn/Al metallic reflector 110 collectively form ODR
Reflecting mirror, while SiO2AuZn and p-GaP Window layer 108 is formed good by 440 DEG C of annealing 10min in deielectric-coating conductive hole
Electrical contact.Deielectric-coating 109 can also use Si3N4、MgF2, any one or combination in ITO.
Above-mentioned SiO2Media coating 109 can also use Si3N4、MgF2, in ITO at least any one.
Evaporation thickness is the Au of 1000nm as metal bonding layer 111 on the ODR reflecting mirror made.
3) as shown in Fig. 2, in permanent substrate --- evaporation thickness is the Au of 1000nm as metal bonding on Si substrate 201
Layer 202.
Permanent substrate can also use Mo substrate, Cu substrate, SiC substrate, Ge substrate, molybdenum-copper substrate or tungsten-copper alloy
Any one in substrate.
4) product that step 2 is made and the product that step 3) is made are immersed in acetone soln and is cleaned by ultrasonic
Then 10min is rinsed well with isopropanol and deionized water respectively, be dried with nitrogen.Opposite, the In by metal bonding layer 111 and 202
300 DEG C, the effect of 5000kg pressure is lower is bonded to the two together by 20min.
5) by the temporary substrates for the product that step 4) is made in the way of mechanical lapping --- GaAs substrate 101 is thinned to
It is about 20 μm remaining, then the NH for being 1:5 with volume ratio4OH and H2O2Mixed solution etches 10min, removes 101 He of GaAs temporary substrates
Buffer layer 102, chemical etching stop on GaInP cutoff layer 103, then immerse HCl and H that volume ratio is 1:23PO4Mixed solution
Middle etching 1min removes GaInP cutoff layer 103, exposes n-GaAs ohmic contact layer 104.
6) soft to dry, expose, after development by the spin coating negative photoresist on n-GaAs ohmic contact layer 104, it is put into electronics
The Au of the AuGe and 100nm thickness of cold plating 50nm thickness, Lift-off produce Ohmic contact point 204 in beam evaporation platform.
7) carried out in 350 DEG C of nitrogen atmosphere annealing furnaces annealing 10min processing, make AuGe Au Ohmic contact point 204 and n-
GaAs ohmic contact layer 104 forms good electrical contact, then immerses the H that volume ratio is 1: 2: 2 again3PO4、H2O2And H2O's
Mixed solution etches 104 figure of n-GaAs ohmic contact layer, and the n-GaAs ohm for only retaining 204 lower section of Ohmic contact point connects
Contact layer 104.
8) in n-AlGaInP limiting layer 105 and Ohmic contact point 204 disposed thereon, one layer of ITO current extending 205, ITO
Current extending 205 can be deposited by the way of electron beam evaporation or magnetron sputtering.
In roughening shape, the surface topography for being roughened shape can be heavy by adjusting ito thin film on ITO current extending 205 surface
Product technological parameter obtains, and is perhaps obtained by such as concentrated sulfuric acid wet etching or is obtained using dry etching.
It is illustrated in figure 5 the present invention and passes through the ITO surface topography of adjusting electron beam evaporation process gain of parameter.
9) soft to dry, expose, developing, being spin-dried in ITO layer surface spin coating negative photoresist, plasma gluing is then carried out, is steamed
The Au of 4 μ m thicks is plated, Lift-off completes the production of main electrode 206.
10) in the surface spin coating positive photoresist of ITO current extending 205 and main electrode 206, it is soft dry, exposure, development,
It is hard to dry, form masking layer pattern when etching Cutting Road.Wafer is immersed in ITO etching solution, wet etching removes Cutting Road
ITO, then ICP dry etching epitaxial layer is used, depth reaches p-GaP Window layer 108, forms Cutting Road, then removes photoresist, cleans.
It can also be using any one method in wet etching, blade cutting, laser cutting when etching Cutting Road.
11), in permanent substrate --- 201 back side of Si substrate use the mode of electron beam hot evaporation distinguish evaporation thickness for
The Ti and Au of 20nm and 100nm completes the production of LED chip back electrode 203.
When permanent substrate is Si substrate, Ge substrate, any one in SiC substrate, step 11) needs to subtract comprising substrate
Thin, three back electrode vapor deposition, back electrode alloy contents.
12) it tests, cut, sliver, complete LED chip process flow, obtain independent LED chip.
Two, manufactured product structure feature:
As shown in Figure 3,4,202 He of metal bonding layer is disposed in the permanent substrate 201 with back electrode 203
111, ODR reflecting mirror 110 and 109, epitaxial layer 104 to 108, ITO current extending 205 and main electrode 206.
Wherein, epitaxial layer includes: p-GaP Window layer 108, p-AlGaInP limiting layer 107, MQW multiple quantum well active layer
106, n-AlGaInP limiting layer 105, n-GaAs ohmic contact layer 104.
ODR reflecting mirror is made of metallic reflector 110 and media coating 109, the window in media coating 109 and epitaxial layer
Layer 108 is connected；Metallic reflector 110 is connected with metal bonding layer 111；206 electricity of ITO current extending 205 and main electrode
Learn connection；Ohmic contact point 204 is provided between ITO current extending 205 and epitaxial layer.
In roughening shape, roughening shape pattern character size is 5nm~200nm on ITO current extending 205 surface as seen from Figure 5.
The characteristic size of the above roughening shape figure refers to the lateral dimension of " graininess ", is in the semiconducter IC industry borrowed
Noun.
Claims (8)
1. surface covers the reversed polarity AlGaInP base LED of ITO layer, gold is disposed in the permanent substrate with back electrode
Belong to bonded layer, ODR reflecting mirror, epitaxial layer, ITO extension current extending and main electrode；The ODR reflecting mirror is by interconnected
Metallic reflector and media coating are constituted, and media coating is connected with epitaxial layer；Metallic reflector is connected with metal bonding layer；
It is characterized by: ITO current expansion layer surface is provided with Ohmic contact between ITO current extending and epitaxial layer in roughening shape
Point；The epitaxial layer sequentially consists of: p-GaP Window layer, p-AlGaInP limiting layer, MQW multiple quantum well active layer, n-
AlGaInP limiting layer, n-GaAs ohmic contact layer, wherein p-GaP Window layer is connect with ODR media coating, and n-GaAs ohm connect
Contact layer is connected by Ohmic contact point with ITO current extending.
2. the reversed polarity AlGaInP base LED of surface covering ITO layer according to claim 1, it is characterised in that ITO electric current expands
Opening up layer surface roughening shape pattern character size is 5nm~200nm.
3. the reversed polarity AlGaInP base LED of surface covering ITO layer according to claim 1, it is characterised in that the deielectric-coating
Layer is SiO2、Si3N4、MgF2, in ITO at least any one.
4. the reversed polarity AlGaInP base LED of surface covering ITO layer according to claim 1, it is characterised in that the metal is anti-
Penetrate layer be Ag, Al, Au, AuZn alloy, in AuBe alloy at least any one.
5. the manufacturing method of the reversed polarity AlGaInP base LED of covering ITO layer in surface as described in claim 1, including following step
It is rapid:
1) successively epitaxial growth buffer, etch stop layers, n-GaAs ohmic contact layer, n-AlGaInP are limited on temporary substrates
Preparative layer, MQW multiple quantum well active layer, p-AlGaInP limiting layer, p-GaP Window layer form epitaxial wafer；
2) media coating, metallic reflector and metal bonding layer are successively made in the p-GaP Window layer of epitaxial wafer；
3) metal bonding layer is made in permanent substrate front；
4) by the metal bonding layer on the metal bonding layer and permanent substrate on epitaxial wafer, by wafer bonding to permanent substrate
On, form the crude product of bonding；
5) temporary substrates, buffer layer and the etch stop layers on the crude product that removal has been bonded, expose n-GaAs Ohmic contact
Layer；
6) photoetching, evaporation metal, Lift-off produce Ohmic contact point；
7) n-GaAs Ohmic contact layer pattern is etched, the n-GaAs ohmic contact layer below Ohmic contact point is only retained；
8) in n-AlGaInP limiting layer and Ohmic contact point one layer of ITO current extending of disposed thereon, and by ITO current expansion
Layer surface makees roughening treatment；
9) photoetching, evaporation metal, Lift-off completion main electrode production are carried out in ITO current expansion layer surface；
10) photoetching is carried out in ITO current expansion layer surface, luminous zone surface forms photoetching compound protective layer, only exposes Cutting Road, so
The ITO current extending of Cutting Road is etched away with ITO etching solution afterwards, then etches Cutting Road, etch depth reaches p-GaP window
Layer；
11) back electrode is made at the permanent substrate back side；
12) cutting, sliver obtain LED chip.
6. manufacturing method according to claim 5, it is characterised in that in the step 2, the media coating is SiO2、
Si3N4、MgF2, in ITO at least any one.
7. according to the manufacturing method of claim 5 or 6, it is characterised in that in the step 2, the metallic reflector be Ag,
In Al, Au, AuZn alloy, AuBe alloy at least any one.
8. manufacturing method according to claim 5, it is characterised in that in the step 8), the ITO current expansion layer surface
Roughening shape pattern character size is 5nm~200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610216232.XA CN105702820B (en) | 2016-04-08 | 2016-04-08 | The reversed polarity AlGaInP base LED and its manufacturing method of surface covering ITO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610216232.XA CN105702820B (en) | 2016-04-08 | 2016-04-08 | The reversed polarity AlGaInP base LED and its manufacturing method of surface covering ITO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105702820A CN105702820A (en) | 2016-06-22 |
| CN105702820B true CN105702820B (en) | 2019-11-22 |
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Family Applications (1)
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| CN108231962A (en) * | 2018-02-08 | 2018-06-29 | 扬州乾照光电有限公司 | A kind of light emitting diode and preparation method thereof |
| CN111106209B (en) * | 2018-10-29 | 2020-12-11 | 山东浪潮华光光电子股份有限公司 | Preparation method of AlGaInP quaternary LED chip |
| CN110379901B (en) * | 2019-05-22 | 2020-10-27 | 华灿光电(苏州）有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN110718613A (en) * | 2019-08-28 | 2020-01-21 | 华灿光电(苏州）有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN112447890B (en) * | 2019-08-29 | 2021-11-02 | 山东浪潮华光光电子股份有限公司 | Method for improving LED chip manufacturing yield |
| CN112038457B (en) * | 2020-09-11 | 2021-10-29 | 扬州乾照光电有限公司 | Flip red light LED chip and manufacturing method thereof |
| CN116435418B (en) * | 2023-06-13 | 2023-08-25 | 南昌凯捷半导体科技有限公司 | 590nm reversed-polarity LED epitaxial wafer and preparation method thereof |
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