CN204374468U

CN204374468U - 4700nm long-pass infrared filtering sensitive element

Info

Publication number: CN204374468U
Application number: CN201420757548.6U
Authority: CN
Inventors: 王继平; 刘晶; 吕晶
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Mai peak Polytron Technologies Inc
Priority date: 2014-12-07
Filing date: 2014-12-07
Publication date: 2015-06-03
Anticipated expiration: 2024-12-07

Abstract

The utility model discloses a kind of 4700nm long-pass infrared filtering sensitive element, comprising with Si is raw-material substrate, be the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer with Ge, ZnS for the first filming layer with Ge, ZnS.A kind of 4700nm long-pass infrared filtering sensitive element that the utility model obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.This optical filtering sensitive element 5%Cut on=4700nm, 6700 ~ 13500nm, Tavg >=70%, 1500 ~ 4200nm, Tavg≤0.5%, T≤3.0%.

Description

4700nm long-pass infrared filtering sensitive element

Technical field

The utility model relates to infrared filtering sensitive element field, especially a kind of 4700nm long-pass infrared filtering sensitive element.

Background technology

Infrared thermography (thermal imaging system or infrared thermography) detects infrared energy (heat) by noncontact, and be converted into electric signal, and then Heat of Formation image and temperature value over the display, and a kind of checkout equipment that can calculate temperature value.Infrared thermography (thermal imaging system or infrared thermography) can, by the heat precise quantification that detects or measurement, make you observe heat picture, accurately can also identify and Exact Analysis the fault zone of heating.

The detector of infrared thermography is the key realizing infrared energy (heat energy) switching electrical signals, the infrared energy (heat energy) sent due to various biology is different, so in order to observe the heat picture of certain particular organisms in routine use, people often add infrared filtering sensitive element in detector, detector can be made only to accept the infrared energy (heat energy) of specific band by infrared filtering sensitive element, ensure the imaging results of infrared thermography.

But current infrared filtering sensitive element, its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.

Utility model content

The purpose of this utility model is deficiency in order to solve above-mentioned technology and provides the 4700nm long-pass infrared filtering sensitive element that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio).

In order to achieve the above object, a kind of 4700nm long-pass infrared filtering sensitive element designed by the utility model, comprising with Si is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 96nm thickness from inside to outside, the ZnS layer of 158nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 147nm thickness, the Ge layer of 106nm thickness, the ZnS layer of 157nm thickness, the Ge layer of 89nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 198nm thickness, the Ge layer of 99nm thickness, the ZnS layer of 156nm thickness, the Ge layer of 101nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 163nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 232nm thickness, the Ge layer of 177nm thickness, the ZnS layer of 166nm thickness, the Ge layer of 135nm thickness, the ZnS layer of 261nm thickness, the Ge layer of 206nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 110nm thickness, the ZnS layer of 143nm thickness, the Ge layer of 241nm thickness, the ZnS layer of 126nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 209nm thickness, the Ge layer of 193nm thickness, the ZnS layer of 924nm thickness, the second described film plating layer is arranged in order the Ge layer including 109nm thickness from inside to outside, the ZnS layer of 152nm thickness, the Ge layer of 243nm thickness, the ZnS layer of 213nm thickness, the Ge layer of 203nm thickness, the ZnS layer of 248nm thickness, the Ge layer of 189nm thickness, the ZnS layer of 296nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 364nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 351nm thickness, the Ge layer of 184nm thickness, the ZnS layer of 358nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 267nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 197nm thickness, the ZnS layer of 561nm thickness, the Ge layer of 231nm thickness, the ZnS layer of 367nm thickness, the Ge layer of 372nm thickness, the ZnS layer of 265nm thickness, the Ge layer of 260nm thickness, the ZnS layer of 1005nm thickness.

The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.

A kind of 4700nm long-pass infrared filtering sensitive element that the utility model obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.This optical filtering sensitive element 5%Cut on=4700nm, 6700 ~ 13500nm, Tavg >=70%, 1500 ~ 4200nm, Tavg≤0.5%, T≤3.0%.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram.

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

In figure: the first filming layer 1, substrate 2, second film plating layer 3.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1.

As Fig. 1, shown in Fig. 2, a kind of 4700nm long-pass infrared filtering sensitive element that the present embodiment describes, comprising with Si is raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 96nm thickness from inside to outside, the ZnS layer of 158nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 147nm thickness, the Ge layer of 106nm thickness, the ZnS layer of 157nm thickness, the Ge layer of 89nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 198nm thickness, the Ge layer of 99nm thickness, the ZnS layer of 156nm thickness, the Ge layer of 101nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 163nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 232nm thickness, the Ge layer of 177nm thickness, the ZnS layer of 166nm thickness, the Ge layer of 135nm thickness, the ZnS layer of 261nm thickness, the Ge layer of 206nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 110nm thickness, the ZnS layer of 143nm thickness, the Ge layer of 241nm thickness, the ZnS layer of 126nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 209nm thickness, the Ge layer of 193nm thickness, the ZnS layer of 924nm thickness, the second described film plating layer 3 is arranged in order the Ge layer including 109nm thickness from inside to outside, the ZnS layer of 152nm thickness, the Ge layer of 243nm thickness, the ZnS layer of 213nm thickness, the Ge layer of 203nm thickness, the ZnS layer of 248nm thickness, the Ge layer of 189nm thickness, the ZnS layer of 296nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 364nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 351nm thickness, the Ge layer of 184nm thickness, the ZnS layer of 358nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 267nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 197nm thickness, the ZnS layer of 561nm thickness, the Ge layer of 231nm thickness, the ZnS layer of 367nm thickness, the Ge layer of 372nm thickness, the ZnS layer of 265nm thickness, the Ge layer of 260nm thickness, the ZnS layer of 1005nm thickness.

Claims

1. a 4700nm long-pass infrared filtering sensitive element, comprising with Si is raw-material substrate (2), with Ge, ZnS is the first filming layer (1) and with Ge, ZnS is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 96nm thickness from inside to outside, the ZnS layer of 158nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 147nm thickness, the Ge layer of 106nm thickness, the ZnS layer of 157nm thickness, the Ge layer of 89nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 198nm thickness, the Ge layer of 99nm thickness, the ZnS layer of 156nm thickness, the Ge layer of 101nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 163nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 232nm thickness, the Ge layer of 177nm thickness, the ZnS layer of 166nm thickness, the Ge layer of 135nm thickness, the ZnS layer of 261nm thickness, the Ge layer of 206nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 110nm thickness, the ZnS layer of 143nm thickness, the Ge layer of 241nm thickness, the ZnS layer of 126nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 209nm thickness, the Ge layer of 193nm thickness, the ZnS layer of 924nm thickness, described the second film plating layer (3) is arranged in order the Ge layer including 109nm thickness from inside to outside, the ZnS layer of 152nm thickness, the Ge layer of 243nm thickness, the ZnS layer of 213nm thickness, the Ge layer of 203nm thickness, the ZnS layer of 248nm thickness, the Ge layer of 189nm thickness, the ZnS layer of 296nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 364nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 351nm thickness, the Ge layer of 184nm thickness, the ZnS layer of 358nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 267nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 197nm thickness, the ZnS layer of 561nm thickness, the Ge layer of 231nm thickness, the ZnS layer of 367nm thickness, the Ge layer of 372nm thickness, the ZnS layer of 265nm thickness, the Ge layer of 260nm thickness, the ZnS layer of 1005nm thickness.