CN204374472U - 6000nm long-pass infrared filtering sensitive element - Google Patents
6000nm long-pass infrared filtering sensitive element Download PDFInfo
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- CN204374472U CN204374472U CN201420757611.6U CN201420757611U CN204374472U CN 204374472 U CN204374472 U CN 204374472U CN 201420757611 U CN201420757611 U CN 201420757611U CN 204374472 U CN204374472 U CN 204374472U
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Abstract
The utility model discloses a kind of 6000nm long-pass infrared filtering sensitive element, comprising with Si is raw-material substrate, be the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer with Ge, ZnS for the first filming layer with Ge, ZnS.A kind of 6000nm long-pass infrared filtering sensitive element that the utility model obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.This optical filtering sensitive element 5%Cut on=6000 ± 300nm, 7500 ~ 13500nm, Tavg >=70%, 400 ~ 5500nm, Tavg≤0.1%, T≤3.0%.
Description
Technical field
The utility model relates to infrared filtering sensitive element field, especially a kind of 6000nm long-pass infrared filtering sensitive element.
Background technology
Infrared thermography (thermal imaging system or infrared thermography) detects infrared energy (heat) by noncontact, and be converted into electric signal, and then Heat of Formation image and temperature value over the display, and a kind of checkout equipment that can calculate temperature value.Infrared thermography (thermal imaging system or infrared thermography) can, by the heat precise quantification that detects or measurement, make you observe heat picture, accurately can also identify and Exact Analysis the fault zone of heating.
The detector of infrared thermography is the key realizing infrared energy (heat energy) switching electrical signals, the infrared energy (heat energy) sent due to various biology is different, so in order to observe the heat picture of certain particular organisms in routine use, people often add infrared filtering sensitive element in detector, detector can be made only to accept the infrared energy (heat energy) of specific band by infrared filtering sensitive element, ensure the imaging results of infrared thermography.
But current infrared filtering sensitive element, its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.
Utility model content
The purpose of this utility model is deficiency in order to solve above-mentioned technology and provides the 6000nm long-pass infrared filtering sensitive element that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio).
In order to achieve the above object, a kind of 6000nm long-pass infrared filtering sensitive element designed by the utility model, comprising with Si is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 237nm thickness from inside to outside, the ZnS layer of 171nm thickness, the Ge layer of 119nm thickness, the ZnS layer of 107nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 186nm thickness, the Ge layer of 111nm thickness, the ZnS layer of 205nm thickness, the Ge layer of 85nm thickness, the ZnS layer of 205nm thickness, the Ge layer of 78nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 147nm thickness, the ZnS layer of 249nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 121nm thickness, the ZnS layer of 176nm thickness, the Ge layer of 213nm thickness, the ZnS layer of 228nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 285nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 350nm thickness, the Ge layer of 107nm thickness, the ZnS layer of 418nm thickness, the Ge layer of 128nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 252nm thickness, the ZnS layer of 118nm thickness, the Ge layer of 294nm thickness, the ZnS layer of 1136nm thickness, the second described film plating layer is arranged in order the Ge layer including 207nm thickness from inside to outside, the ZnS layer of 302nm thickness, the Ge layer of 248nm thickness, the ZnS layer of 372nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 383nm thickness, the Ge layer of 226nm thickness, the ZnS layer of 400nm thickness, the Ge layer of 212nm thickness, the ZnS layer of 445nm thickness, the Ge layer of 207nm thickness, the ZnS layer of 429nm thickness, the Ge layer of 211nm thickness, the ZnS layer of 336nm thickness, the Ge layer of 255nm thickness, the ZnS layer of 502nm thickness, the Ge layer of 222nm thickness, the ZnS layer of 785nm thickness, the Ge layer of 202nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 402nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 377nm thickness, the ZnS layer of 684nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 890nm thickness, the Ge layer of 293nm thickness, the ZnS layer of 408nm thickness, the Ge layer of 354nm thickness, the ZnS layer of 1250nm thickness.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
A kind of 6000nm long-pass infrared filtering sensitive element that the utility model obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.This optical filtering sensitive element 5%Cut on=6000 ± 300nm, 7500 ~ 13500nm, Tavg >=70%, 400 ~ 5500nm, Tavg≤0.1%, T≤3.0%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate 2, second film plating layer 3.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1.
As Fig. 1, shown in Fig. 2, a kind of 6000nm long-pass infrared filtering sensitive element that the present embodiment describes, comprising with Si is raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 237nm thickness from inside to outside, the ZnS layer of 171nm thickness, the Ge layer of 119nm thickness, the ZnS layer of 107nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 186nm thickness, the Ge layer of 111nm thickness, the ZnS layer of 205nm thickness, the Ge layer of 85nm thickness, the ZnS layer of 205nm thickness, the Ge layer of 78nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 147nm thickness, the ZnS layer of 249nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 121nm thickness, the ZnS layer of 176nm thickness, the Ge layer of 213nm thickness, the ZnS layer of 228nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 285nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 350nm thickness, the Ge layer of 107nm thickness, the ZnS layer of 418nm thickness, the Ge layer of 128nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 252nm thickness, the ZnS layer of 118nm thickness, the Ge layer of 294nm thickness, the ZnS layer of 1136nm thickness, the second described film plating layer 3 is arranged in order the Ge layer including 207nm thickness from inside to outside, the ZnS layer of 302nm thickness, the Ge layer of 248nm thickness, the ZnS layer of 372nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 383nm thickness, the Ge layer of 226nm thickness, the ZnS layer of 400nm thickness, the Ge layer of 212nm thickness, the ZnS layer of 445nm thickness, the Ge layer of 207nm thickness, the ZnS layer of 429nm thickness, the Ge layer of 211nm thickness, the ZnS layer of 336nm thickness, the Ge layer of 255nm thickness, the ZnS layer of 502nm thickness, the Ge layer of 222nm thickness, the ZnS layer of 785nm thickness, the Ge layer of 202nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 402nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 377nm thickness, the ZnS layer of 684nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 890nm thickness, the Ge layer of 293nm thickness, the ZnS layer of 408nm thickness, the Ge layer of 354nm thickness, the ZnS layer of 1250nm thickness.
Claims (1)
1. a 6000nm long-pass infrared filtering sensitive element, comprising with Si is raw-material substrate (2), with Ge, ZnS is the first filming layer (1) and with Ge, ZnS is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 237nm thickness from inside to outside, the ZnS layer of 171nm thickness, the Ge layer of 119nm thickness, the ZnS layer of 107nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 186nm thickness, the Ge layer of 111nm thickness, the ZnS layer of 205nm thickness, the Ge layer of 85nm thickness, the ZnS layer of 205nm thickness, the Ge layer of 78nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 147nm thickness, the ZnS layer of 249nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 121nm thickness, the ZnS layer of 176nm thickness, the Ge layer of 213nm thickness, the ZnS layer of 228nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 285nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 350nm thickness, the Ge layer of 107nm thickness, the ZnS layer of 418nm thickness, the Ge layer of 128nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 252nm thickness, the ZnS layer of 118nm thickness, the Ge layer of 294nm thickness, the ZnS layer of 1136nm thickness, described the second film plating layer (3) is arranged in order the Ge layer including 207nm thickness from inside to outside, the ZnS layer of 302nm thickness, the Ge layer of 248nm thickness, the ZnS layer of 372nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 383nm thickness, the Ge layer of 226nm thickness, the ZnS layer of 400nm thickness, the Ge layer of 212nm thickness, the ZnS layer of 445nm thickness, the Ge layer of 207nm thickness, the ZnS layer of 429nm thickness, the Ge layer of 211nm thickness, the ZnS layer of 336nm thickness, the Ge layer of 255nm thickness, the ZnS layer of 502nm thickness, the Ge layer of 222nm thickness, the ZnS layer of 785nm thickness, the Ge layer of 202nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 402nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 377nm thickness, the ZnS layer of 684nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 890nm thickness, the Ge layer of 293nm thickness, the ZnS layer of 408nm thickness, the Ge layer of 354nm thickness, the ZnS layer of 1250nm thickness.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420757611.6U CN204374472U (en) | 2014-12-07 | 2014-12-07 | 6000nm long-pass infrared filtering sensitive element |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420757611.6U CN204374472U (en) | 2014-12-07 | 2014-12-07 | 6000nm long-pass infrared filtering sensitive element |
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| CN204374472U true CN204374472U (en) | 2015-06-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597538A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 6000 nm long-wave pass infrared filtering sensitive element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597538A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 6000 nm long-wave pass infrared filtering sensitive element |
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