CN202472019U

CN202472019U - 5,300-nano band pass infrared optical filter

Info

Publication number: CN202472019U
Application number: CN2012200909561U
Authority: CN
Inventors: 吕晶
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Mai peak Polytron Technologies Inc
Priority date: 2012-03-12
Filing date: 2012-03-12
Publication date: 2012-10-03
Anticipated expiration: 2022-03-12

Abstract

The utility model discloses a 5,300-nano band pass infrared optical filter which comprises a substrate taking Si as a raw material, a first film coating layer taking Ge and SiO as a film coating material and a second film coating layer taking Ge and ZnS as a film coating material, wherein the substrate is arranged between the first film coating layer and the second film coating layer. The optical filter is characterized in that in the first film coating layer, Ge and SiO with different thickness are staggered with each other; in the second film coating layer, Ge and ZnS with different thickness are overlapped with each other; and Ge is arranged on the inner sides of the first film coating layer and the second film coating layer. Through the 5,300-nano band pass infrared optical filter disclosed by the utility model, the center wavelength is fixed at 5,300+/-1% nanometers, the peak transmittance is over 90%, the transmittance of the cut-off region is less than 0..1%, and the signal-to-noise ratio is greatly increased. Moreover, the optical filter disclosed by the utility model has low cost, is suitable for detecting NO gas, enhances the capability of distinguishing NO gas, improves the detection precision, can effectively improve the NO gas distinguishing rate of the analytical instrument, and better meet the practical using requirements.

Description

The aglow outer optical filter of 5300 nano belt

Technical field

The utility model relates to a kind of infrared fileter, particularly the aglow outer optical filter of 5300 nano belt.

Background technology

At nature, any object all have infrared line to send, and every kind of material all has its special emission or absorbs characteristic peak more than absolute zero (273 degree).Filter, allow specific infrared ray to pass through simultaneously with aglow outer optical filter by visible light.Utilization can detect the existence of predetermined substance with the characteristic that the characteristic infrared spectral line of this permission object of aglow outer optical filter sees through, and is widely used in security protection, environmental protection, industry, scientific research etc.Directly influence the precision and the sensitivity of detection with the quality of aglow outer optical filter.Present NO infrared optics analytical instrument is widely used, and detected gas contains measuring to be had in real time, continuous and reliable characteristics, but low through NO content in the object gas; The infrared signature absorption peak a little less than; Detection difficult, there are problems such as detecting device life-span weak point or cost height in therefore present domestic more employing chemical method and film temperature-sensitive probe method; Therefore should reduce cost, it is quite important in NO infrared optics analytical instrument to improve detection accuracy again.Just be used for the aglow outer optical filter of 5300 nano belt that NO surveys at present, accuracy of detection is not high, transmitance and signal to noise ratio (S/N ratio) are low, and the phenomenon of mistake survey sometimes appears in low precision, can not satisfy the needs of market development.

The utility model content

The purpose of the utility model is to provide a kind of peak transmittance high for the deficiency that solves above-mentioned prior art, can improve signal to noise ratio (S/N ratio) greatly, and is applicable to the aglow outer optical filter of 5300 nano belt that detects NO gas.

To achieve these goals; The aglow outer optical filter of 5300 nano belt that the utility model designed; Comprise that with Si be raw-material substrate; Be the first filming layer of Coating Materials and be second coatings of Coating Materials with Ge, SiO with Ge, ZNS; And said substrate is located between the first filming layer and second coatings; It is characterized in that said the first filming layer comprises the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the 122nm thickness that is arranged in order from inside to outside, 295nm thickness, 91nm thickness, 367nm thickness, 88nm thickness, 251nm thickness, 373nm thickness, 320nm thickness, 126nm thickness, 446nm thickness, 124nm thickness, 85nm thickness, 220nm thickness, 328nm thickness, 97nm thickness, 598nm thickness, 175nm thickness, 235nm thickness, 222nm thickness, 550nm thickness, 161nm thickness, 251nm thickness, 278nm thickness, 1382nm thickness, 504nm thickness, 1240nm thickness, 514nm thickness and the SiO layer of 628nm thickness, said second coatings comprises the Ge layer of the 296nm thickness that is arranged in order from inside to outside, the ZnS layer of 402nm thickness, the Ge layer of 108nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 272nm thickness, the ZnS layer of 510nm thickness, the Ge layer of 257nm thickness, the ZnS layer of 431nm thickness, the Ge layer of 173nm thickness, the ZnS layer of 410nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 529nm thickness, the Ge layer of 286nm thickness, the ZnS layer of 567nm thickness, the Ge layer of 608nm thickness, the ZnS layer of 789nm thickness, the Ge layer of 339nm thickness, the ZnS layer of 607nm thickness, the Ge layer of 365nm thickness, the ZnS layer of 996nm thickness, the Ge layer of 457nm thickness, the ZnS layer of 621nm thickness, the Ge layer of 338nm thickness, the ZnS layer of 790nm thickness, the Ge layer of 528nm thickness and the ZnS layer of 212nm thickness.

The corresponding thickness of above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Usually the tolerance of thickness is about 10nm.

The aglow outer optical filter of 5300 nano belt that the utility model obtains through above-mentioned design, has realized that cost is low; And be applicable to and detect NO gas, this optical filter can realize that centre wavelength orientates 5300 ± 1% nanometers as, and peak transmittance reaches more than 90%; The cut-off region transmitance has improved signal to noise ratio (S/N ratio) greatly less than 0.1%, can increase the resolution characteristic to NO gas; Improve accuracy of detection, can effectively improve the resolution of analytical instrument, better meet the request for utilization in the reality NO gas.

Description of drawings

Fig. 1 is the one-piece construction synoptic diagram of embodiment;

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

Among the figure: the first filming layer 1, substrate 2, second coatings 3.

Embodiment

Below in conjunction with accompanying drawing and embodiment the utility model is further specified.

Embodiment:

As shown in Figure 1; The aglow outer optical filter of 5300 nano belt that present embodiment provides; Comprise that with Si be raw-material substrate 2; Be the first filming layer 1 of Coating Materials and be second coatings 3 of Coating Materials with Ge, SiO with Ge, ZnS; And substrate 2 is located between the first filming layer 1 and second coatings 3; The first filming layer 1 comprises the Ge layer of the 122nm thickness that is arranged in order from inside to outside, the SiO layer of 295nm thickness, the Ge layer of 91nm thickness, the SiO layer of 367nm thickness, the Ge layer of 88nm thickness, the SiO layer of 251nm thickness, the Ge layer of 373nm thickness, the SiO layer of 320nm thickness, the Ge layer of 126nm thickness, the SiO layer of 446nm thickness, the Ge layer of 124nm thickness, the SiO layer of 85nm thickness, the Ge layer of 220nm thickness, the SiO layer of 328nm thickness, the Ge layer of 97nm thickness, the SiO layer of 598nm thickness, the Ge layer of 175nm thickness, the SiO layer of 235nm thickness, the Ge layer of 222nm thickness, the SiO layer of 550nm thickness, the Ge layer of 161nm thickness, the SiO layer of 251nm thickness, the Ge layer of 278nm thickness, the SiO layer of 1382nm thickness, the Ge layer of 504nm thickness, the SiO layer of 1240nm thickness, the Ge layer of 514nm thickness and the SiO layer of 628nm thickness, and said second coatings comprises the Ge layer of the 296nm thickness that is arranged in order from inside to outside, the ZnS layer of 402nm thickness, the Ge layer of 108nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 272nm thickness, the ZnS layer of 510nm thickness, the Ge layer of 257nm thickness, the ZnS layer of 431nm thickness, the Ge layer of 173nm thickness, the ZnS layer of 410nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 529nm thickness, the Ge layer of 286nm thickness, the ZnS layer of 567nm thickness, the Ge layer of 608nm thickness, the ZnS layer of 789nm thickness, the Ge layer of 339nm thickness, the ZnS layer of 607nm thickness, the Ge layer of 365nm thickness, the ZnS layer of 996nm thickness, the Ge layer of 457nm thickness, the ZnS layer of 621nm thickness, the Ge layer of 338nm thickness, the ZnS layer of 790nm thickness, the Ge layer of 528nm thickness and the ZnS layer of 212nm thickness.

The aglow outer optical filter of 5300 nano belt that present embodiment provides; Its measured curve is as shown in Figure 2, and present embodiment can realize that centre wavelength orientates 5300 ± 1% nanometers as, and peak transmittance reaches more than 90%; The cut-off region transmitance has improved signal to noise ratio (S/N ratio) greatly less than 0.1%.

Claims

1. aglow outer optical filter of nano belt; Comprise that with Si be raw-material substrate; Be the first filming layer of Coating Materials and be second coatings of Coating Materials with Ge, SiO with Ge, ZnS; And said substrate is located between the first filming layer and second coatings; It is characterized in that said the first filming layer comprises the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the SiO layer of the Ge layer of the 122nm thickness that is arranged in order from inside to outside, 295nm thickness, 91nm thickness, 367nm thickness, 88nm thickness, 251nm thickness, 373nm thickness, 320nm thickness, 126nm thickness, 446nm thickness, 124nm thickness, 85nm thickness, 220nm thickness, 328nm thickness, 97nm thickness, 598nm thickness, 175nm thickness, 235nm thickness, 222nm thickness, 550nm thickness, 161nm thickness, 251nm thickness, 278nm thickness, 1382nm thickness, 504nm thickness, 1240nm thickness, 514nm thickness and the SiO layer of 628nm thickness, said second coatings comprises the Ge layer of the 296nm thickness that is arranged in order from inside to outside, the ZnS layer of 402nm thickness, the Ge layer of 108nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 272nm thickness, the ZnS layer of 510nm thickness, the Ge layer of 257nm thickness, the ZnS layer of 431nm thickness, the Ge layer of 173nm thickness, the ZnS layer of 410nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 529nm thickness, the Ge layer of 286nm thickness, the ZnS layer of 567nm thickness, the Ge layer of 608nm thickness, the ZnS layer of 789nm thickness, the Ge layer of 339nm thickness, the ZnS layer of 607nm thickness, the Ge layer of 365nm thickness, the ZnS layer of 996nm thickness, the Ge layer of 457nm thickness, the ZnS layer of 621nm thickness, the Ge layer of 338nm thickness, the ZnS layer of 790nm thickness, the Ge layer of 528nm thickness and the ZnS layer of 212nm thickness.