CN104597543A - 7600 nm long-wave pass infrared filtering sensitive element - Google Patents
7600 nm long-wave pass infrared filtering sensitive element Download PDFInfo
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- CN104597543A CN104597543A CN201410733567.XA CN201410733567A CN104597543A CN 104597543 A CN104597543 A CN 104597543A CN 201410733567 A CN201410733567 A CN 201410733567A CN 104597543 A CN104597543 A CN 104597543A
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- 238000001914 filtration Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 4
- 238000009501 film coating Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 238000009529 body temperature measurement Methods 0.000 abstract 1
- 238000001931 thermography Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a 7600 nm long-wave pass infrared filtering sensitive element. The 6000 nm long-wave pass infrared filtering sensitive element comprises a substrate taking Ge as raw material, a first film coating layer made of Ge and ZnS and a second film coating layer made of Ge and ZnS; the substrate is arranged between the first film coating layer and the second film coating layer. The 7600 nm long-wave pass infrared filtering sensitive element can largely improve the signal-to-noise ratio and improve the testing accuracy during the temperature measurement process, and is applicable to popularize and use on a large scale. The 50% Cut on of the filtering sensitive element is equal to 7600+/-50 nm, 7700-11000 nm; Tavg is not less than 90%, 8000-11000 nm; T is not less than 88%, 1500-7400 nm, and T is not more than 3%.
Description
Technical field
The present invention relates to infrared filtering sensitive element field, especially a kind of 7600nm long-pass infrared filtering sensitive element.
Background technology
Infrared thermography (thermal imaging system or infrared thermography) detects infrared energy (heat) by noncontact, and be converted into electric signal, and then Heat of Formation image and temperature value over the display, and a kind of checkout equipment that can calculate temperature value.Infrared thermography (thermal imaging system or infrared thermography) can, by the heat precise quantification that detects or measurement, make you observe heat picture, accurately can also identify and Exact Analysis the fault zone of heating.
The detector of infrared thermography is the key realizing infrared energy (heat energy) switching electrical signals, the infrared energy (heat energy) sent due to various biology is different, so in order to observe the heat picture of certain particular organisms in routine use, people often add infrared filtering sensitive element in detector, detector can be made only to accept the infrared energy (heat energy) of specific band by infrared filtering sensitive element, ensure the imaging results of infrared thermography.
But current infrared filtering sensitive element, its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.
Summary of the invention
The object of the invention is the deficiency in order to solve above-mentioned technology and the 7600nm long-pass infrared filtering sensitive element that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio) is provided.
In order to achieve the above object, a kind of 7600nm long-pass infrared filtering sensitive element designed by the present invention, comprising with Ge is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 165nm thickness from inside to outside, the ZnS layer of 237nm thickness, the Ge layer of 223nm thickness, the ZnS layer of 411nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 338nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 171nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 157nm thickness, the ZnS layer of 499nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 125nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 391nm thickness, the ZnS layer of 178nm thickness, the Ge layer of 166nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 131nm thickness, the ZnS layer of 623nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 310nm thickness, the ZnS layer of 498nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 583nm thickness, the Ge layer of 191nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 344nm thickness, the ZnS layer of 888nm thickness, the Ge layer of 69nm thickness, the ZnS layer of 291nm thickness, the Ge layer of 49nm thickness, the ZnS layer of 402nm thickness, the Ge layer of 614nm thickness, the ZnS layer of 949nm thickness, the second described film plating layer is arranged in order the Ge layer including 178nm thickness from inside to outside, the ZnS layer of 371nm thickness, the Ge layer of 309nm thickness, the ZnS layer of 614nm thickness, the Ge layer of 381nm thickness, the ZnS layer of 530nm thickness, the Ge layer of 264nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 94nm thickness, the ZnS layer of 549nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 654nm thickness, the Ge layer of 347nm thickness, the ZnS layer of 802nm thickness, the Ge layer of 274nm thickness, the ZnS layer of 663nm thickness, the Ge layer of 411nm thickness, the ZnS layer of 736nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 576nm thickness, the Ge layer of 525nm thickness, the ZnS layer of 653nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 558nm thickness, the ZnS layer of 1070nm thickness.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
A kind of 7600nm long-pass infrared filtering sensitive element that the present invention obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.This optical filtering sensitive element 50%Cut on=7600 ± 50nm, 7700 ~ 11000nm, Tavg >=90%, 8000 ~ 11000nm, T >=88%, 1500 ~ 7400nm, T≤3%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate 2, second film plating layer 3.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1.
As depicted in figs. 1 and 2, a kind of 7600nm long-pass infrared filtering sensitive element that the present embodiment describes, comprising with Ge is raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 165nm thickness from inside to outside, the ZnS layer of 237nm thickness, the Ge layer of 223nm thickness, the ZnS layer of 411nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 338nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 171nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 157nm thickness, the ZnS layer of 499nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 125nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 391nm thickness, the ZnS layer of 178nm thickness, the Ge layer of 166nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 131nm thickness, the ZnS layer of 623nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 310nm thickness, the ZnS layer of 498nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 583nm thickness, the Ge layer of 191nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 344nm thickness, the ZnS layer of 888nm thickness, the Ge layer of 69nm thickness, the ZnS layer of 291nm thickness, the Ge layer of 49nm thickness, the ZnS layer of 402nm thickness, the Ge layer of 614nm thickness, the ZnS layer of 949nm thickness, the second described film plating layer 3 is arranged in order the Ge layer including 178nm thickness from inside to outside, the ZnS layer of 371nm thickness, the Ge layer of 309nm thickness, the ZnS layer of 614nm thickness, the Ge layer of 381nm thickness, the ZnS layer of 530nm thickness, the Ge layer of 264nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 94nm thickness, the ZnS layer of 549nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 654nm thickness, the Ge layer of 347nm thickness, the ZnS layer of 802nm thickness, the Ge layer of 274nm thickness, the ZnS layer of 663nm thickness, the Ge layer of 411nm thickness, the ZnS layer of 736nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 576nm thickness, the Ge layer of 525nm thickness, the ZnS layer of 653nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 558nm thickness, the ZnS layer of 1070nm thickness.
Claims (1)
1. a 7600nm long-pass infrared filtering sensitive element, comprising with Ge is raw-material substrate (2), with Ge, ZnS is the first filming layer (1) and with Ge, ZnS is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 165nm thickness from inside to outside, the ZnS layer of 237nm thickness, the Ge layer of 223nm thickness, the ZnS layer of 411nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 338nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 171nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 157nm thickness, the ZnS layer of 499nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 125nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 391nm thickness, the ZnS layer of 178nm thickness, the Ge layer of 166nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 131nm thickness, the ZnS layer of 623nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 310nm thickness, the ZnS layer of 498nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 583nm thickness, the Ge layer of 191nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 344nm thickness, the ZnS layer of 888nm thickness, the Ge layer of 69nm thickness, the ZnS layer of 291nm thickness, the Ge layer of 49nm thickness, the ZnS layer of 402nm thickness, the Ge layer of 614nm thickness, the ZnS layer of 949nm thickness, described the second film plating layer (3) is arranged in order the Ge layer including 178nm thickness from inside to outside, the ZnS layer of 371nm thickness, the Ge layer of 309nm thickness, the ZnS layer of 614nm thickness, the Ge layer of 381nm thickness, the ZnS layer of 530nm thickness, the Ge layer of 264nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 94nm thickness, the ZnS layer of 549nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 654nm thickness, the Ge layer of 347nm thickness, the ZnS layer of 802nm thickness, the Ge layer of 274nm thickness, the ZnS layer of 663nm thickness, the Ge layer of 411nm thickness, the ZnS layer of 736nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 576nm thickness, the Ge layer of 525nm thickness, the ZnS layer of 653nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 558nm thickness, the ZnS layer of 1070nm thickness.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410733567.XA CN104597543A (en) | 2014-12-07 | 2014-12-07 | 7600 nm long-wave pass infrared filtering sensitive element |
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| CN201410733567.XA CN104597543A (en) | 2014-12-07 | 2014-12-07 | 7600 nm long-wave pass infrared filtering sensitive element |
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| CN104597543A true CN104597543A (en) | 2015-05-06 |
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| CN201410733567.XA Pending CN104597543A (en) | 2014-12-07 | 2014-12-07 | 7600 nm long-wave pass infrared filtering sensitive element |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487156A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared filter applied to medium wave infrared imaging |
| CN106443856A (en) * | 2016-11-02 | 2017-02-22 | 天津津航技术物理研究所 | Preparation method of ultrawide-band infrared cut-off film filter |
Citations (6)
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|---|---|---|---|---|
| US6091127A (en) * | 1997-04-02 | 2000-07-18 | Raytheon Company | Integrated infrared detection system |
| CN103698831A (en) * | 2013-11-29 | 2014-04-02 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with pass band of 7,600 to 9,900 nm |
| CN103713347A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Infrared temperature measuring filter with passing band of 7550-13900 nm |
| CN103713345A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Infrared temperature measuring filter with passing band of 7600-9300 nm |
| CN203551827U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Infrared measuring temperature filter with pass band of 7600-9900 nm |
| CN204374475U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | 7600nm long-pass infrared filtering sensitive element |
-
2014
- 2014-12-07 CN CN201410733567.XA patent/CN104597543A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6091127A (en) * | 1997-04-02 | 2000-07-18 | Raytheon Company | Integrated infrared detection system |
| CN103698831A (en) * | 2013-11-29 | 2014-04-02 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with pass band of 7,600 to 9,900 nm |
| CN103713347A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Infrared temperature measuring filter with passing band of 7550-13900 nm |
| CN103713345A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Infrared temperature measuring filter with passing band of 7600-9300 nm |
| CN203551827U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Infrared measuring temperature filter with pass band of 7600-9900 nm |
| CN204374475U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | 7600nm long-pass infrared filtering sensitive element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487156A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared filter applied to medium wave infrared imaging |
| CN106443856A (en) * | 2016-11-02 | 2017-02-22 | 天津津航技术物理研究所 | Preparation method of ultrawide-band infrared cut-off film filter |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant before: Multi IR Optoelectronics Co., Ltd. |
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Application publication date: 20150506 |