CN203720532U - Photoetching marking structure - Google Patents
Photoetching marking structure Download PDFInfo
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- CN203720532U CN203720532U CN201420019121.6U CN201420019121U CN203720532U CN 203720532 U CN203720532 U CN 203720532U CN 201420019121 U CN201420019121 U CN 201420019121U CN 203720532 U CN203720532 U CN 203720532U
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Abstract
The utility model provides a photoetching marking structure. The photoetching marking structure comprises a first test mark and a second test mark, wherein the first test mark comprises an inner-layer structure and an outer-layer structure surrounding the inner-layer structure, and the outer-layer structure comprises a plurality of first outer-layer substructure and a plurality of second outer-layer substructure; the second test mark comprises a plurality of third substructures and a plurality of fourth substructures, the third substructures are arranged in the first outer-layer substructures, and the fourth substructures surround the second outer-layer substructures. According to the photoetching marking structure, the critical size and the registering precision are judged according to a position relation between the second test mark and the first test mark, and the measurement of the critical size and the measurement of registering precision are combined together, so that measuring steps are simple, and the efficiency is high.
Description
Technical field
The utility model relates to technical field of integrated circuits, particularly a kind of photo-etching mark structure.
Background technology
Semiconductor technology continues to develop along Moore's Law, critical dimension is more and more less, the integrated level of chip is also more and more higher, this has proposed more and more stricter requirement to semiconductor fabrication process, therefore must in technological process, reduce as much as possible the error of each step, reduce the component failure causing because of error.
In semiconductor fabrication, photoetching process is as the core technology in each technology generation and develop.Photoetching is the technological process that the circuit structure of the upper graphic form of mask plate (mask) is transferred to the silicon chip surface that scribbles photoresist by steps such as aligning, exposure, developments, photoetching process can form one deck photoresist masking figure at silicon chip surface, and its subsequent technique is etching or Implantation.In the CMOS technique of standard, need to use the lithography step of tens of times, and affect the factor of photoetching process error, except the resolution of litho machine, also have the degree of accuracy of aiming at.Thereby, in photoetching process, must aim at wafer, just figure can be transferred on the photoresist layer of wafer accurately.
A complete wafer is generally divided into process island and test section, after multiple photoetching and etching technics, forms multiple integrated circuit on process island, makes semi-conductor chip through cutting and encapsulation.In ic manufacturing process, first on silicon substrate, form ground floor semiconductor structure through photoetching and etching technics, then aim at ground floor semiconductor structure, second layer semiconductor structure cover is engraved on ground floor, repeat aforesaid operations, current layer semiconductor structure is aimed to ground floor and cover is engraved on last layer, but current layer semiconductor structure cover is engraved in the technological process of last layer and has error.For this reason, form multiple integrated circuit on process island in, on test section, form multiple alignment patterns (photo-etching mark), each alignment patterns represents the alignment precision of equivalent layer to ground floor, just can judge the alignment precision of equivalent layer in integrated circuit by detecting the alignment precision of the alignment patterns on test section.
As shown in Figure 1, existing photo-etching mark structure comprises the first test badge and the second test badge, and described the first test badge is positioned at the second test badge inside, thereby makes whole test badge be " returning " font.Described the first test badge comprises four minor structures, by four independently strip structure 11 enclose and form, its upper and lower and left and right directions is all central shaft symmetry.Equally, described the second test badge comprises four minor structures, by four independently strip structure 21 enclose and form, its upper and lower and left and right directions is all central shaft symmetry.The first test badge is as the test badge of front one deck, and the second test badge is as the test badge of current layer.Can measure alignment (overlay) precision of photoetching by above-mentioned test badge, but also need additionally to measure critical size (CD), that is to say, need critical size to measure and two steps of cover locating tab assembly, and need two kinds of boards to measure respectively, step is complicated and loaded down with trivial details, inefficiency.
Utility model content
The purpose of this utility model is to provide a kind of photo-etching mark structure, the problem loaded down with trivial details, inefficiency to solve existing measuring process complexity.
For solving the problems of the technologies described above, the utility model provides a kind of photo-etching mark structure, comprise the first test badge and the second test badge, described the first test badge comprises endothecium structure and surrounds the layer structure of described endothecium structure, described layer structure comprises multiple the first outer minor structures and multiple the second outer minor structure, described the second test badge comprises multiple the 3rd minor structures and multiple the 4th minor structure, described the 3rd minor structure is arranged in described the first outer minor structure, and described the 4th minor structure is surrounded described the second outer minor structure.
Further, described endothecium structure by four independently measure-alike inner-electron structure enclose and form, its upper and lower and left and right directions is all central shaft symmetry.
Further, described layer structure is enclosed and is formed by two the first outer minor structures and two the second outer minor structures, and described the first outer minor structure and the second outer minor structure are oppositely arranged.
Further, first of described layer structure the outer minor structure is corresponding parallel with the inner-electron structure of described endothecium structure with the second outer minor structure.
Further, described the first outer minor structure and the second outer minor structure are strip, and the width of described the first outer minor structure is greater than the width of described the second outer minor structure.
Further, the width of described the first outer minor structure is between 3.5-4.5 μ m, and the width of described the second outer minor structure is between 1.5-2.5 μ m.
Further, described the second test badge is enclosed and is formed by two the 3rd minor structures and two the 4th minor structures, and described the 3rd minor structure and the 4th minor structure are oppositely arranged.
Further, the 3rd minor structure of described the second test badge is corresponding parallel with the inner-electron structure of described endothecium structure with the 4th minor structure.
Further, described the 3rd minor structure is strip, and described the 4th minor structure is annular.
Further, the width of described the 3rd minor structure is between 1.5-2.5 μ m, and the width of described the 4th minor structure is between 1.5-2.5 μ m.
Compared with prior art, the photo-etching mark structure that the utility model provides comprises the first test badge and the second test badge, described the first test badge comprises endothecium structure and layer structure, described layer structure surrounds endothecium structure, described layer structure comprises multiple the first outer minor structures and multiple the second outer minor structure, described the second test badge comprises multiple the 3rd minor structures and multiple the 4th minor structure, wherein the 3rd minor structure is arranged in the first outer minor structure, and the 4th minor structure is surrounded the second outer minor structure.Judge critical size (CD) and alignment (overlay) precision by the position relationship of the second test badge and the first test badge, CD and overlay measurement are combined, measuring process is simple, and efficiency is high.
Brief description of the drawings
Fig. 1 is the schematic diagram of existing photo-etching mark structure;
Fig. 2 is the schematic diagram of the photo-etching mark structure that provides of the utility model one embodiment;
Fig. 3 is the schematic diagram of the first test badge in Fig. 2;
Fig. 4 is the schematic diagram of the second test badge in Fig. 2;
Fig. 5 is the principle schematic of the photo-etching mark structure that provides of the utility model one embodiment.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail.
A lot of details are set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to the utility model intension in the situation that, and therefore the utility model is not subject to the restriction of following public specific embodiment.
Secondly, the utility model is described in detail in conjunction with schematic diagram, in the time that the utility model embodiment is described in detail in detail; for ease of explanation; represent that the sectional view of device architecture can disobey general ratio and do local amplification, and described schematic diagram is example, it should not limit the scope of the utility model protection at this.In addition in actual fabrication, should comprise, the three-dimensional space of length, width and the degree of depth.
Just as described in the background section, in prior art, need critical size to measure (CD) and two steps of alignment (overlay) measurement, and need two kinds of boards to measure respectively.Find after deliberation, CD is associated with overlay for the impact of technique, if CD control is better, also can accept even if overlay deviation is larger.Based on this, the utility model provides a kind of photo-etching mark structure, comprise the first test badge and the second test badge, described the first test badge comprises endothecium structure and layer structure, described layer structure surrounds endothecium structure, described layer structure comprises multiple the first outer minor structures and multiple the second outer minor structure, described the second test badge comprises multiple the 3rd minor structures and multiple the 4th minor structure, wherein the 3rd minor structure is arranged in the first outer minor structure, and the 4th minor structure is surrounded the second outer minor structure.Judge CD and overlay precision by the position relationship of the second test badge and the first test badge, CD and overlay measurement are combined, measuring process is simple, and efficiency is high.
Below in conjunction with accompanying drawing 2 to 4 detailed description photo-etching mark structure provided by the utility model.
Described photo-etching mark structure comprises the first test badge 100 and the second test badge 200.The first test badge 100 is as the test badge of front one deck, and the second test badge 200 is as the test badge of current layer.
Described the first test badge 100 comprises endothecium structure and surrounds the layer structure of described endothecium structure.Described endothecium structure comprises four inner-electron structures 101, by four independently measure-alike strip structure enclose and form, its upper and lower and left and right directions is all central shaft symmetry.Certainly, in other embodiments, described endothecium structure also can be for changing four strip structures that separate into a single square structure.Described layer structure comprises multiple the first outer minor structures 102 and multiple the second outer minor structure 103, specifically enclosed and formed by two the first outer minor structures 102 and two the second outer minor structures 103, the first outer minor structure 102 and the second outer minor structure 103 are oppositely arranged.The first outer minor structure 102 of described layer structure, the second outer minor structure 103 are corresponding parallel with four inner-electron structures 101 of described endothecium structure.
Described the second test badge 200 comprises multiple the 3rd minor structures 201 and multiple the 4th minor structure 202, is specifically enclosed and is formed by two the 3rd minor structures 201 and two the 4th minor structures 202, and the 3rd minor structure 201 and the 4th minor structure 202 are oppositely arranged.The 3rd minor structure 201 of described the second test badge 200, the 4th minor structure 202 are corresponding parallel with the inner-electron structure 201 of the endothecium structure of the first test badge 200.
In the present embodiment, the first outer minor structure 102 and the second outer minor structure 103 are strip, and the width W 1 of the first outer minor structure 102 is greater than the width W 2 of the second outer minor structure 103.The 3rd minor structure 201 is strip, and the 4th minor structure 202 is annular, and the 3rd minor structure 201 is arranged in the first outer minor structure 102, and the 4th minor structure 202 is surrounded the second outer minor structure 103.
In the present embodiment, the width W 1 of described the first outer minor structure 102 is between 3.5-4.5 μ m, and the width W 2 of described the second outer minor structure 103 is between 1.5-2.5 μ m.The width W 3 of described the 3rd minor structure 201 is between 1.5-2.5 μ m, and the width W 4 of described the 4th minor structure 202 is between 1.5-2.5 μ m.The Edge Distance L1 of the edge of described the first outer minor structure 102 and the 3rd minor structure 201 is between 0.5～1.5 μ m.The distance L 2 of the edge of described the second outer minor structure 103 and the 4th minor structure 202 inner edges is between 0.5～1.5 μ m.
While utilizing described photo-etching mark structure to measure, aim at the first test badge 100 of the test badge as front one deck as test badge second test badge 200 of current layer, the endothecium structure of the first test badge 100 is as reference point.If aligning and CD meet standard as shown in Figure 2 completely, datum line (as shown in phantom in Figure 2) is positioned at assigned address just.In the time that CD becomes large, the size of the second test badge 200 becomes large, alignment (overlay) size is also offset (shift) naturally, datum line (as shown in phantom in Figure 5) on directions X is offset to the right, datum line (as shown in phantom in Figure 5) in Y-direction offsets downward, and can measure side-play amount and then judge CD off-set value by measuring board.So, CD and overlay measurement can be combined by above-mentioned photo-etching mark structure, measuring process is simple, and efficiency is high.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the utility model.To be apparent for those skilled in the art to the multiple amendment of these embodiment, General Principle as defined herein can, in the situation that not departing from spirit or scope of the present utility model, realize in other embodiment.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a photo-etching mark structure, it is characterized in that, comprise the first test badge and the second test badge, described the first test badge comprises endothecium structure and surrounds the layer structure of described endothecium structure, described layer structure comprises multiple the first outer minor structures and multiple the second outer minor structure, described the second test badge comprises multiple the 3rd minor structures and multiple the 4th minor structure, described the 3rd minor structure is arranged in described the first outer minor structure, and described the 4th minor structure is surrounded described the second outer minor structure.
2. photo-etching mark structure as claimed in claim 1, is characterized in that, described endothecium structure by four independently measure-alike inner-electron structure enclose and form, its upper and lower and left and right directions is all central shaft symmetry.
3. photo-etching mark structure as claimed in claim 2, is characterized in that, described layer structure is enclosed and formed by two the first outer minor structures and two the second outer minor structures, and described the first outer minor structure and the second outer minor structure are oppositely arranged.
4. photo-etching mark structure as claimed in claim 3, is characterized in that, the first outer minor structure of described layer structure is corresponding parallel with the inner-electron structure of described endothecium structure with the second outer minor structure.
5. the photo-etching mark structure as described in claim 3 or 4, is characterized in that, described the first outer minor structure and the second outer minor structure are strip, and the width of described the first outer minor structure is greater than the width of described the second outer minor structure.
6. photo-etching mark structure as claimed in claim 5, is characterized in that, the width of described the first outer minor structure is between 3.5-4.5 μ m, and the width of described the second outer minor structure is between 1.5-2.5 μ m.
7. photo-etching mark structure as claimed in claim 3, is characterized in that, described the second test badge is enclosed and formed by two the 3rd minor structures and two the 4th minor structures, and described the 3rd minor structure and the 4th minor structure are oppositely arranged.
8. photo-etching mark structure as claimed in claim 6, is characterized in that, the 3rd minor structure of described the second test badge is corresponding parallel with the inner-electron structure of described endothecium structure with the 4th minor structure.
9. photo-etching mark structure as claimed in claim 7 or 8, is characterized in that, described the 3rd minor structure is strip, and described the 4th minor structure is annular.
10. photo-etching mark structure as claimed in claim 9, is characterized in that, the width of described the 3rd minor structure is between 1.5-2.5 μ m, and the width of described the 4th minor structure is between 1.5-2.5 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420019121.6U CN203720532U (en) | 2014-01-13 | 2014-01-13 | Photoetching marking structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420019121.6U CN203720532U (en) | 2014-01-13 | 2014-01-13 | Photoetching marking structure |
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| Publication Number | Publication Date |
|---|---|
| CN203720532U true CN203720532U (en) | 2014-07-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420019121.6U Expired - Fee Related CN203720532U (en) | 2014-01-13 | 2014-01-13 | Photoetching marking structure |
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| CN (1) | CN203720532U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783672A (en) * | 2016-11-30 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | A kind of standard film for verifying Overlay board precision, preparation method and verification method |
| CN109856930A (en) * | 2017-11-30 | 2019-06-07 | 京东方科技集团股份有限公司 | Alignment mark, substrate and preparation method thereof, exposure alignment method |
| CN111710617A (en) * | 2020-06-30 | 2020-09-25 | 度亘激光技术（苏州）有限公司 | Detection method of semiconductor structure and semiconductor structure |
-
2014
- 2014-01-13 CN CN201420019121.6U patent/CN203720532U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783672A (en) * | 2016-11-30 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | A kind of standard film for verifying Overlay board precision, preparation method and verification method |
| CN109856930A (en) * | 2017-11-30 | 2019-06-07 | 京东方科技集团股份有限公司 | Alignment mark, substrate and preparation method thereof, exposure alignment method |
| CN109856930B (en) * | 2017-11-30 | 2021-05-25 | 京东方科技集团股份有限公司 | Alignment mark, substrate, manufacturing method of substrate and exposure alignment method |
| US11315882B2 (en) | 2017-11-30 | 2022-04-26 | Ordos Yuansheng Optoelectronics Co., Ltd. | Alignment mark, substrate and manufacturing method therefor, and exposure alignment method |
| CN111710617A (en) * | 2020-06-30 | 2020-09-25 | 度亘激光技术（苏州）有限公司 | Detection method of semiconductor structure and semiconductor structure |
| CN111710617B (en) * | 2020-06-30 | 2023-08-22 | 度亘激光技术（苏州）有限公司 | Semiconductor structure and detection method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140716 Termination date: 20190113 |
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| CF01 | Termination of patent right due to non-payment of annual fee |