CN102866599B - Method for detecting controllability of mask aligner to graph fuzzy imaging - Google Patents
Method for detecting controllability of mask aligner to graph fuzzy imaging Download PDFInfo
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- CN102866599B CN102866599B CN201210389026.0A CN201210389026A CN102866599B CN 102866599 B CN102866599 B CN 102866599B CN 201210389026 A CN201210389026 A CN 201210389026A CN 102866599 B CN102866599 B CN 102866599B
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Abstract
The invention provides a method for detecting controllability of a mask aligner to graph fuzzy imaging. The method comprises the steps of 1 utilizing the mask aligner to perform exposure of a testing mask plate on a silicon wafer and performing development; 2 utilizing an electronic line width measuring device to detect the exposure size obtained by the silicon wafer; 3 performing subtraction of the exposure size obtained by the silicon wafer and the size of a preset mask plate, and 4 judging the controllability of the mask aligner to the graph fuzzy imaging according to a subtraction result obtained in the third step. The method utilizes the exposure of the of testing mask plate on the silicon wafer, utilizes the electronic line width measuring device to perform detection after the development, performs the subtraction of the actual exposure size obtained by the silicon wafer and the size of the preset mask plate and accordingly can test precision performance of the controllability of the mask aligner to the graph fuzzy imaging. Therefore, a measured graph of the silicon wafer used by the method is not required to be manufactured in advance, and the method is flexible, quick and convenient.
Description
Technical field
The present invention relates to semiconductor fabrication process, more particularly, the present invention relates to and a kind ofly detect the method for litho machine to figure fuzzy imaging control ability.
Background technology
Photoetching technique is with the continuous progress of integrated circuit fabrication process, constantly reducing of live width, the area of semiconductor devices is just becoming more and more less, and the layout of semiconductor, from common simple function discrete device, develops into the integrated circuit integrating high-density multifunction; IC(integrated circuit by initial) subsequently to LSI(large scale integrated circuit), VLSI(VLSI (very large scale integrated circuit)), until the ULSI(ULSI of today), the area of device reduces further, and function is more comprehensively powerful.
Consider the complicacy of technique research and development, the restriction of chronicity and high cost etc. unfavorable factor, on the basis of prior art level, how to improve the integration density of device further, reduce the area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thus raising overall interests, more and more will be subject to chip designer, the attention of manufacturer.Wherein photoetching process is just responsible for crucial effect, and for photoetching technique, namely lithographic equipment, technique and mask plate technology are the most important things wherein.
In order to obtain higher production capacity, the exposure area of litho machine also constantly increases, and has reached 26mm*33mm (X*Y) at present.The structure (see Fig. 1, Fig. 2) of mask aligner mask plate work stage, is blocked unnecessary light in exposure process by mask plate shadow shield 5, and then can define the feature size scope of exposure.
In order to ensure the predefined figure that litho machine can realize accurately on mask plate, mask plate shadow shield is just needed to locate accurately.When being positioned at the shadow shield border of litho machine, because light diffraction can occur, and then form border parasitic light, this is harmful for imaging, and industry is referred to as figure fuzzy (ImageBlur).Usually be can locate accurately and effective control shadow shield border parasitic light, the mensuration mask plate shadow shield detection architecture that industry is conventional to the requirement of the shadow shield of mask plate, as shown in Figure 3.Measure mask plate shadow shield detection architecture to be made up of the structure that size dimension is different respectively, all there is scale size on each limit of each figure, amplifies diagram and sees on the left of Fig. 3.
Adopt the workflow of this structure to be: first, silicon chip produces different size size by photoetching, etching technics and there is the graphic structure of rule on every bar limit; Secondly, then on silicon chip gluing, define identical dimension of picture according to former preposition at the region shadow shield of correspondence and expose respectively; Carry out reading (Fig. 4 right part A is photoresist actual graphical limit) by microscope and then obtain precision performance and the parasitic light control ability data of litho machine shadow shield.
In general, this method adjustment mask plate shadow shield size, silicon chip makes the mask plate figure realizing different size.Subsequently, again expose and confirm shadow shield mobile accuracy with microscope.It more directly can determine mask plate shadow shield positioning precision and parasitic light control ability data, but due to naked eyes limitation, cannot Accurate Expression mask plate shadow shield accuracy and parasitic light control ability data, and prepare because exposure silicon chip needs to make in advance and define concrete size, therefore the size of measurement pattern cannot also be adjusted flexibly according to the actual needs of client, to determine whether precision can reach requirement to different product dimension of picture size.Therefore the method is incomplete in other words.
Summary of the invention
Technical matters to be solved by this invention is for there is above-mentioned defect in prior art, provides a kind of and can improve the detection litho machine of the detectability that the camera lens figure fuzzy imaging of litho machine controls the method for figure fuzzy imaging control ability.
In order to realize above-mentioned technical purpose, according to the present invention, providing and a kind ofly detecting the method for litho machine to figure fuzzy imaging control ability, comprising: first step: utilize litho machine, exposed on silicon chip by test mask plate, and develop; Second step: utilize the exposure size that electronics Wire width measuring equipment detection silicon chip obtains; Third step: the exposure size obtained at silicon chip and predetermined mask board size are subtracted each other; 4th step: judge that litho machine is to figure fuzzy imaging control ability according to the result of subtracting each other that third step obtains.
Preferably, described test mask plate is phase shift mask plate and/or binary mask plate.
Preferably, the actual graphical area size of described test mask plate is 26mm × 33mm.
Preferably, the scope 0.01 micron ~ 26000 microns of the lateral dimension of the actual graphical regional graphics of described test mask plate; The scope of longitudinal size 0.01 micron ~ 33000 microns.
Preferably, by two, the identical but figure that attribute is contrary is formed described test mask plate actual graphical regional graphics, is that the main litho machine when two kinds contrary shows figure fuzzy imaging control ability precision for measure printing opacity be main and light tight.
Preferably, in described test mask plate actual graphical regional graphics, the light tight area in the light tight region of mask plate actual graphical regional graphics accounts for the scope 0% ~ 50% of graphics field area.
Preferably, in described test mask plate actual graphical regional graphics, the glazed area of the transmission region of mask plate actual graphical regional graphics accounts for the scope 0% ~ 50% of graphics field area.
Preferably, it is at least one in 0 degree, 90 degree, 270 degree, 360 degree that light tight region in described test mask plate actual graphical regional graphics and transmission region are put on mask plate, to determine that four orientation litho machines show figure fuzzy imaging control ability precision.
Preferably, the actual graphical regional graphics of described test mask plate include actual coordinate position.
The present invention utilizes test mask plate to expose on silicon chip, electronics Wire width measuring equipment is utilized to detect after development, the exposure size obtained at actual silicon chip and predetermined mask board size are subtracted each other, and then litho machine can be tested the precision of figure fuzzy imaging control ability is showed, thus, the present invention's silicon chip used is without the need to making mensuration figure in advance, convenient more flexibly.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Fig. 1 schematically shows the upward view of exposure photo-etching machine mask plate workpiece platform and mask plate.
Fig. 2 schematically shows the sectional view of exposure photo-etching machine mask plate workpiece platform and mask plate.
Fig. 3 schematically shows the mask plate photo-shield strip accuracy test structure of industrywide standard.
Fig. 4 schematically shows mask plate photo-shield strip accuracy test schematic enlarged-scale view and the test schematic diagram of industrywide standard.
Fig. 5 schematically shows according to the detection litho machine of the embodiment of the present invention the process flow diagram of the method for figure fuzzy imaging control ability.
Fig. 6 schematically shows the diagram in the test mask plate actual graphical region according to the embodiment of the present invention.
Reference number illustrates: 1, projection lens; 2, mask plate stationary platform; 3, mask plate; 4, mask plate actual graphical region; 5, mask plate shadow shield; 6, the figure (the identical but figure that attribute is contrary is formed design configuration by two) that test mask plate actual graphical region 4 is amplified; 7, the coordinates regional (coordinate axis center origin is mask plate center) of test mask plate actual graphical; 8, and the light tight region of test mask plate actual graphical regional graphics (x ' be pattern lateral dimensions; Y ' is longitudinal size); 9, the transmission region of test mask plate actual graphical regional graphics
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Traditional accuracy of mask plate hood determination techniques needs the mask plate figure making different size in advance on silicon chip.Subsequently, again expose and confirm shadow shield mobile accuracy with microscope.It more directly can determine mask plate shadow shield positioning precision, but due to naked eyes limitation, cannot Accurate Expression mask plate shadow shield accuracy and parasitic light control ability data, and prepare because exposure silicon chip needs to make in advance and define concrete size, therefore the size of measurement pattern cannot also be adjusted flexibly according to the actual needs of client, to determine whether precision can reach requirement to different product dimension of picture size.
Embodiment of the present invention proposition is a kind of detects the method for litho machine to figure fuzzy imaging control ability, and its effect improves the detectability controlled the camera lens figure fuzzy imaging of litho machine.
Fig. 5 schematically shows according to the detection litho machine of the embodiment of the present invention the process flow diagram of the method for figure fuzzy imaging control ability.
As shown in Figure 5, comprise according to the method for detection litho machine to figure fuzzy imaging control ability of the embodiment of the present invention:
First step S1: utilize litho machine, is exposed by test mask plate, and develops on silicon chip;
Second step S2: utilize the exposure size that electronics Wire width measuring equipment detection silicon chip obtains;
Third step S3: the exposure size obtained at silicon chip and predetermined mask board size are subtracted each other;
4th step S4: judge that litho machine is to figure fuzzy imaging control ability according to the result of subtracting each other that third step S3 obtains.
Utilize the test mask plate (see Fig. 6) of the embodiment of the present invention, silicon chip exposes, electronics Wire width measuring equipment is utilized to detect after development, the exposure size obtained at actual silicon chip (x ', y ') and predetermined mask board size are subtracted each other, and then precision performance (micron order) of litho machine to figure fuzzy imaging control ability can be tested.Embodiment of the present invention silicon chip used is without the need to making mensuration figure in advance, convenient more flexibly.
Specifically, above-mentioned test mask plate can be such as phase shift mask plate (PSM) or binary mask plate (Binary).
And preferably, the lateral dimension of the feature actual graphical area size X-direction of test mask plate is 26mm(1 times), the longitudinal size of Y-direction is 33mm(1 times).Such as, in test mask plate actual graphical regional graphics 6, the light tight region 8 of mask plate actual graphical regional graphics or the x ' of transmission region 9 are pattern lateral dimensions, y ' is longitudinal size, and x ' is of a size of 0.01 micron ~ 26000 microns, the scope of y ' size 0.01 micron ~ 33000 microns.In test mask plate actual graphical regional graphics 6, the light tight region 8 of mask plate actual graphical regional graphics or the horizontal quantity of figure step numeral of transmission region 9 are X/x ', and longitudinal quantity is Y/y '.That is, preferably, the scope 0.01 micron ~ 26000 microns of the lateral dimension of the X-direction of test mask plate actual graphical regional graphics 6; The scope of the longitudinal size of Y-direction 0.01 micron ~ 33000 microns.
Preferably, by two, the identical but figure that attribute is contrary is formed test mask plate actual graphical regional graphics 6, is main for measure printing opacity be main and light tight, two kinds contrary when, litho machine shows figure fuzzy imaging control ability precision.
Preferably, in the actual graphical regional graphics 6 of test mask plate, the light tight area 6-2 in the light tight region 8 of mask plate actual graphical regional graphics accounts for the scope 0% ~ 50% of graphics field area.
Preferably, in test mask plate actual graphical regional graphics 6, its glazed area of transmission region 9 6-1 of mask plate actual graphical regional graphics accounts for the scope 0% ~ 50% of graphics field area.
Preferably, it can be 0 degree, 90 degree, 270 degree, 360 degree that the transmission region 8 in test mask plate actual graphical regional graphics 6 and light tight region 9 are put on mask plate, to determine that four orientation litho machines show figure fuzzy imaging control ability precision.
Preferably, test mask plate actual graphical regional graphics 6 include actual coordinate position 7(coordinate axis center origin is mask plate center).
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (8)
1. detect the method for litho machine to figure fuzzy imaging control ability, it is characterized in that comprising:
First step: utilize litho machine, is exposed by test mask plate, and develops on silicon chip, and the actual graphical regional graphics of described test mask plate include actual coordinate position, and described coordinate position is determined by figure step;
Second step: utilize the exposure size that electronics Wire width measuring equipment detection silicon chip obtains;
Third step: the exposure size obtained at silicon chip and predetermined mask board size are subtracted each other;
4th step: judge that litho machine is to figure fuzzy imaging control ability according to the result of subtracting each other that third step obtains.
2. detection litho machine according to claim 1 is to the method for figure fuzzy imaging control ability, it is characterized in that, described test mask plate is phase shift mask plate and/or binary mask plate.
3. detection litho machine according to claim 1 and 2 is to the method for figure fuzzy imaging control ability, it is characterized in that, the actual graphical area size of described test mask plate is 26mm × 33mm.
4. detection litho machine according to claim 1 and 2 is to the method for figure fuzzy imaging control ability, it is characterized in that, the scope of the lateral dimension of the actual graphical regional graphics of described test mask plate 0.01 micron ~ 26000 microns; The scope of longitudinal size 0.01 micron ~ 33000 microns.
5. detection litho machine according to claim 1 and 2 is to the method for figure fuzzy imaging control ability, it is characterized in that, by two, the identical but figure that attribute is contrary is formed described test mask plate actual graphical regional graphics, is that the main litho machine when two kinds contrary shows figure fuzzy imaging control ability precision for measure printing opacity be main and light tight.
6. detection litho machine according to claim 5 is to the method for figure fuzzy imaging control ability, it is characterized in that, in described test mask plate actual graphical regional graphics, the light tight area in the light tight region of mask plate actual graphical regional graphics accounts for the scope 0% ~ 50% of graphics field area.
7. detection litho machine according to claim 5 is to the method for figure fuzzy imaging control ability, it is characterized in that, in described test mask plate actual graphical regional graphics, the glazed area of the transmission region of mask plate actual graphical regional graphics accounts for the scope 0% ~ 50% of graphics field area.
8. detection litho machine according to claim 1 and 2 is to the method for figure fuzzy imaging control ability, it is characterized in that, it is at least one in 0 degree, 90 degree, 270 degree, 360 degree that light tight region in described test mask plate actual graphical regional graphics and transmission region are put on mask plate, to determine that four orientation litho machines show figure fuzzy imaging control ability precision.
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| CN201210389026.0A CN102866599B (en) | 2012-10-12 | 2012-10-12 | Method for detecting controllability of mask aligner to graph fuzzy imaging |
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| CN201210389026.0A CN102866599B (en) | 2012-10-12 | 2012-10-12 | Method for detecting controllability of mask aligner to graph fuzzy imaging |
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| CN102866599B true CN102866599B (en) | 2015-05-06 |
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| CN107748479A (en) * | 2017-11-03 | 2018-03-02 | 武汉华星光电半导体显示技术有限公司 | It is a kind of to judge that baffle plate walks the mask plate and its method of precision |
| CN111736435A (en) * | 2020-07-23 | 2020-10-02 | 上海华力微电子有限公司 | Photoetching device and exposure method thereof |
Citations (5)
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| CN1349252A (en) * | 2000-08-23 | 2002-05-15 | 索尼株式会社 | Pattern testing device, explosure equipment control system |
| CN101315518A (en) * | 2007-05-30 | 2008-12-03 | Hoya株式会社 | Photomask testing method, photomask manufacture method, electronic component manufacture method, testing mask and testing mask set |
| CN102023488A (en) * | 2009-09-09 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring energy deviation of exposure machine in photoetching technique |
| CN102043343A (en) * | 2009-10-23 | 2011-05-04 | 无锡华润上华半导体有限公司 | Method for measuring focus point of exposure machine |
| CN102566291A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Test system for projection mask |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1349252A (en) * | 2000-08-23 | 2002-05-15 | 索尼株式会社 | Pattern testing device, explosure equipment control system |
| CN101315518A (en) * | 2007-05-30 | 2008-12-03 | Hoya株式会社 | Photomask testing method, photomask manufacture method, electronic component manufacture method, testing mask and testing mask set |
| CN102023488A (en) * | 2009-09-09 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring energy deviation of exposure machine in photoetching technique |
| CN102043343A (en) * | 2009-10-23 | 2011-05-04 | 无锡华润上华半导体有限公司 | Method for measuring focus point of exposure machine |
| CN102566291A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Test system for projection mask |
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