CN203659553U - Wafer resistor - Google Patents
Wafer resistor Download PDFInfo
- Publication number
- CN203659553U CN203659553U CN201320696189.3U CN201320696189U CN203659553U CN 203659553 U CN203659553 U CN 203659553U CN 201320696189 U CN201320696189 U CN 201320696189U CN 203659553 U CN203659553 U CN 203659553U
- Authority
- CN
- China
- Prior art keywords
- resistor
- matrix
- wafer
- conductive film
- conducting film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 4
- 150000004706 metal oxides Chemical class 0.000 abstract description 4
- 229910001120 nichrome Inorganic materials 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 4
- 239000004927 clay Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910001006 Constantan Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009422 external insulation Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000005028 tinplate Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Landscapes
- Non-Adjustable Resistors (AREA)
- Details Of Resistors (AREA)
Abstract
The utility model relates to a resistor, and particularly relates to a wafer resistor. The wafer resistor comprises a base body, an insulated coating, leadless caps and a conductive film. The wafer resistor is characterized in that the conductive film is attached to the surface of the base body; the leadless caps are fixedly arranged at two ends of the base body and connected with the conductive film; the insulating coating is coated at the external surface of the conductive film; the conductive film is a nichrome film layer; the base body is a cylindrical solid core ceramic resistor. The wafer resistor is sintered by a metal oxide and a ceramic material mixed at high temperature, so that the wafer resistor has the advantages of being small in volume, and strong in load capacity, can bear instantaneous high-temperature and high-pressure action, and is mainly applied to ignition of automobiles and motorcycles.
Description
Technical field
The utility model relates to a kind of resistor, particularly a kind of wafer resistance.
Background technology
Wafer resistance can be described as again column type resistance, without pin resistance or without lead resistance, be mainly applicable to, in the high Higher-Order Circuit of power-type/impacting with high pressure type/security requirement, belong to Surface Mount Component.
At present; resistor is made up of matrix, ceramics pole, conductive layer, lead-out wire and protective layer conventionally; on ceramics pole, be wound around conductive layer; this conductive layer be conductive filament as nickel filament, constantan wire etc., at conductive layer outer cladding matrix, matrix outer cladding protective layer as paint etc.; two ends at conductive layer connect lead-out wire; said structure is general electric resistance structure, compared with wafer electric resistance structure, comparatively complicated.
As the patent of Granted publication CN 201673813 U provides a kind of Novel resistor, comprise resistive element and lead-out wire, resistive element is made up of ceramic matrix and glass glaze conducting film, glass glaze conducting film is coated on ceramic matrix outer surface, between resistive element and lead-out wire, be threaded, also be provided with solder joint at resistive element and lead-out wire junction, be also provided with secondary lead-out wire at the two ends of resistive element, between secondary lead-out wire and resistive element, be threaded; This utility model is conducting film owing to adopting glass glaze electric conducting material, can be used for interchange, direct current and impulse circuit and high-tension apparatus, has good high pressure resistant and power load performance, meets the requirement of high-tension circuit and high-power circuit; In addition, resistive element and lead-out wire adopt and are threaded and the setting of solder joint, and secondary lead-out wire for subsequent use is set, and connect very firmly, and reliability is high, can meet instructions for use high-power, large electric current.But this traditional lead-in wire installation method is comparatively complicated, cannot meet the requirement that Fast Installation is produced, in addition, this resistor design does not possess resistant to elevated temperatures performance.
Summary of the invention
The purpose of this utility model is in order to overcome above deficiency, and a kind of wafer resistor of simple in structure, high temperature high voltage resistant is provided, and this resistance adopts metal oxide and ceramic material to mix at high temperature sintering and forms, and can bear the effect of moment HTHP.
The technical solution of the utility model is: a kind of wafer resistance, seal, form without lead cap and conducting film by matrix, insulation, it is characterized in that: conducting film is attached to matrix surface, be packed in the two ends of matrix and be connected with conducting film without lead cap, insulating bag package overlays on the outer surface of conducting film.
Described matrix is columned real core ceramic resistor, is mixed by clay, aluminium oxide, ceramic inserts.
Described conducting film is nichrome rete.
Described is forced zinc-plated chapeau de fer without lead cap.
The glued membrane for being made up of epoxy resin/glass fabric or epoxy resin/paper-based composite material is sealed in described insulation.
The beneficial effects of the utility model are:
The utility model design, without lead-in wire cylindrical outer shape, adopts metal oxide and ceramic material to mix at high temperature sintering and forms, and can bear the effect of moment HTHP, is mainly used in automobile, motorcycle ignition.
Accompanying drawing explanation
Fig. 1 is the structural representation of wafer resistor described in the utility model.
In figure, 1-is without lead cap, 2-matrix, and 3-conducting film, 4-insulation is sealed.
Embodiment
Below in conjunction with embodiment, the utility model is described further:
In the present embodiment, as shown in Figure 1, a kind of wafer resistance, seal 4, form without lead cap 1 and conducting film 3 by matrix 2, insulation, conducting film 3 is nichrome rete, is attached to matrix 2 surfaces, and matrix 2 is mixed by clay, aluminium oxide and ceramic inserts, there is the powerful feature of transient absorption, have noninductive, high pressure resistant, volume is little and the characteristic such as stable performance.
Being packed in the two ends of matrix 2 and contacting with the conducting film 3 of nichrome without lead cap 1 of forced tinplate, 4 outer surfaces that are coated on conducting film are sealed in insulation, and insulation seals 4 for by the epoxy resin glued membrane mutually formulated with paper-based composite material.
Matrix is real core ceramic resistor, is mixed by clay, aluminium oxide and ceramic inserts, forms resistance core through HTHP sintering, then coats external insulation moulding.
The utility model can be according to client's designing requirement customization size, and surface mount, reduces technological process; The rated power of cermet resistance is up to 5W, and the power of a cermet resistance can reach the power reaching after the brilliant resistance assembling of several real core carbon, replaces the brilliant real core resistance of 1W and 2W carbon, reduces installation cost.In addition, adopt metal oxide and ceramic material to mix at high temperature sintering and form, have volume little, load-bearing capacity is strong, can bear the effect of moment HTHP, is mainly used in automobile, motorcycle ignition.
More than show and described principal character of the present utility model and advantage of the present utility model.The technical staff of the industry should understand, and the utility model is not restricted to the described embodiments, and the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (4)
1. a wafer resistance, is sealed, is formed without lead cap and conducting film by matrix, insulation, it is characterized in that: conducting film is attached to matrix surface, and be packed in the two ends of matrix and be connected with conducting film without lead cap, insulating bag package overlays on the outer surface of conducting film.
2. wafer resistance according to claim 1, is characterized in that: described matrix is columned real core ceramic resistor.
3. wafer resistance according to claim 1, is characterized in that: described is forced zinc-plated chapeau de fer without lead cap.
4. wafer resistance according to claim 1, is characterized in that: the glued membrane for being made up of epoxy resin/glass fabric or epoxy resin/paper-based composite material is sealed in described insulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320696189.3U CN203659553U (en) | 2013-11-07 | 2013-11-07 | Wafer resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320696189.3U CN203659553U (en) | 2013-11-07 | 2013-11-07 | Wafer resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203659553U true CN203659553U (en) | 2014-06-18 |
Family
ID=50925917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320696189.3U Expired - Fee Related CN203659553U (en) | 2013-11-07 | 2013-11-07 | Wafer resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203659553U (en) |
-
2013
- 2013-11-07 CN CN201320696189.3U patent/CN203659553U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140618 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |