CN203622170U - Chemical mechanical grinding component - Google Patents
Chemical mechanical grinding component Download PDFInfo
- Publication number
- CN203622170U CN203622170U CN201320835691.8U CN201320835691U CN203622170U CN 203622170 U CN203622170 U CN 203622170U CN 201320835691 U CN201320835691 U CN 201320835691U CN 203622170 U CN203622170 U CN 203622170U
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- wafer
- grinding
- radius
- ground
- ring
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model provides a chemical mechanical grinding component which at least comprises a grinding mat for grinding a wafer to be ground, a polishing ring arranged on the grinding mat and around the periphery of the wafer to be ground, a body provided with a plurality of air channels, a membrane arranged on the lower surface of the body, a locating ring fixed at the end, close to the wafer to be ground, of the body and arranged around the membrane, and a connecting rod located at the end, far from the wafer to be ground, of the body. A grinding head is large in size, the radius R1 of the membrane is larger than or equal to the radius R2 of the wafer, the polishing ring arranged around the periphery of the wafer to be ground is arranged on the grinding mat, in grinding, the polishing ring occupies the position of the edge of an original wafer, the wafer which really needs to be ground is located at the center of the grinding head and the center of the membrane, pressure of the membrane is adjusted to achieve control over the film thickness of the whole wafer, and therefore the problem that the film thickness of the edge of the wafer is hard to master is avoided.
Description
Technical field
The utility model relates to semiconductor manufacturing equipment field, particularly relates to a kind of cmp assembly.
Background technology
Cmp is also known as chemical-mechanical planarization (Chemical Mechanical Planarization, CMP) or chemically mechanical polishing (Chemical Mechanical Polishing, CMP).In semiconductor fabrication process, flattening surface is an important technology processing high density photoetching, in the process of flattening surface, the uniformity of controlling wafer surface thickness is extremely important, do not have the flat surfaces of height fall just can avoid the scattering that exposes because only have, and reach accurate design transfer; Meanwhile, the uniformity of wafer surface thickness also will have influence on the unit for electrical property parameters of electronic device, and meeting in uneven thickness makes the device performance of producing on same wafer produce difference, affects yield rate.
Along with the development of semiconductor fabrication process, chemically mechanical polishing is considered to current unique technology that the wafer overall situation and local planarization can be provided.CMP process be widely used in inter-level dielectric, metal level (as tungsten plug, copper connecting lines), shallow trench isolation from removal and smooth, become one of field with fastest developing speed in semiconductor fabrication process.Fig. 1 a is chemical mechanical polishing device schematic diagram of the prior art.As shown in Figure 1a, described chemical mechanical polishing device comprises grinding head 10, grinding plate (not shown), adheres to grinding pad 11 and grinding fluid nozzle 12 on described grinding plate.While carrying out cmp, described grinding plate rotation, drive described grinding pad 11 to rotate together (as shown in the thick arrow in Fig. 1 a), described grinding fluid nozzle 12 is to described grinding pad 11 jet grinding liquid, and the centrifugal force producing by described grinding pad 11 rotations is evenly distributed on described grinding pad 11 described lapping liquid, described grinding head 10 adsorbs the wafer that will grind, and the face to be ground of described wafer is pressed on the lapped face of described grinding pad 11, described grinding head 10 drives described wafer to rotate together (as shown in the fine rule head of Fig. 1 a), relative motion between the lapped face of by described wafer to be ground and described grinding pad 11 is by be ground planarization of described wafer.
Fig. 1 b is grinding assembly structural representation of the prior art.As shown in Figure 1 b, this grinding assembly structure at least comprises: body 14, in described body 14, be provided with gas passage 15, both can vacuumize generation negative pressure by described gas passage 15, can lead to again γ-ray emission normal pressure, described normal pressure is pressed in described wafer 13 and locating ring 17 lapped face of grinding pad 11; Be arranged at one end barrier film 16 of body 14 near wafer, described barrier film 16 is for adsorbing wafer 13; Be fixed on the locating ring 17 of body 17 near wafer 13 outsides, one end, described locating ring 17 is for limiting the position of wafer 13, and the face that described locating ring 17 contacts described grinding pad 11 is provided with groove, and described groove is for delivery of lapping liquid; Described body 14 is provided with connecting rod 18 away from one end of wafer 13, and described connecting rod 18 rotates, and drives described body 14, barrier film 16, locating ring 17 to rotate together with wafer 13.But while using grinding head 10 to grind wafer 13 in prior art, because the edge of wafer 13 is positioned at the edge of grinding pad 11 and barrier film 16, and grinding pad 11 meeting under large pressure-acting occurs curling, and there is the inhomogeneous situation of the pressure distribution of existing at barrier film 16 edges, this will make wafer 13 will depart from the thickness at wafer 13 centers far away at the thickness of the process Zhong Qi edge of grinding, and wafer 13 edge's thickness are difficult to control.
Therefore, provide a kind of follow-on cmp assembly very necessary.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of cmp assembly, for solving prior art because the edge of wafer is positioned at the edge of grinding pad and barrier film, and grinding pad meeting under large pressure-acting occurs curling, grinding head diaphragm edge has the inhomogeneous situation of pressure distribution and the thickness of the crystal round fringes that causes departs from the thickness of crystal circle center, the unmanageable problem of thickness of crystal round fringes far away.
For achieving the above object and other relevant objects, the utility model provides a kind of cmp assembly, and described cmp assembly at least comprises:
Be placed with the grinding pad of wafer to be ground;
Be located on described grinding pad and be enclosed in the buffing ring of described polished wafer periphery;
Be provided with the body of some gas passages;
Be arranged at the barrier film of described body lower surface;
Be fixed on described body near one end of wafer to be ground, surround described barrier film and for holding wafer to be ground and being enclosed in the locating ring of the buffing ring of described polished wafer periphery;
Be positioned at the connecting rod of described body away from one end of wafer to be ground.
As a kind of preferred version of cmp assembly of the present utility model, the radius R of described barrier film
1be more than or equal to the radius R of wafer
2.
As a kind of preferred version of cmp assembly of the present utility model, the radius R of described barrier film
1for 400mm.
As a kind of preferred version of cmp assembly of the present utility model, between the madial wall of described locating ring and the edge of described wafer, be provided with gap, the width d in described gap
1be more than or equal to interior outer radius poor of buffing ring.
As a kind of preferred version of cmp assembly of the present utility model, the material of described buffing ring is silicon or polyphenylene sulfide.
As a kind of preferred version of cmp assembly of the present utility model, the inside radius R of described buffing ring
3with wafer radius R
2equate.
As a kind of preferred version of cmp assembly of the present utility model, the outer radius R of described buffing ring
4for wafer radius R
21.3～1.5 times.
As a kind of preferred version of cmp assembly of the present utility model, the thickness d of described buffing ring
2be less than or equal to the thickness of wafer.
As mentioned above, cmp assembly of the present utility model, has following beneficial effect: grinding head is designed to large scale grinding head, the radius R of membrane portions
1be more than or equal to the radius R of wafer
2the buffing ring that surrounds polished wafer periphery is set simultaneously on grinding pad, when grinding, buffing ring has occupied the position that is equivalent to original crystal round fringes, making really needs the wafer grinding to be positioned at the central authorities of grinding head and barrier film, by the adjusting to barrier film pressure, realize the control to whole wafer film thickness, be difficult for thereby avoided crystal round fringes place thickness the problem of controlling.
Accompanying drawing explanation
Fig. 1 a is shown as chemical mechanical polishing device schematic diagram of the prior art.
Fig. 1 b is shown as grinding head cutaway view of the prior art.
Fig. 2 is shown as cmp assembly cutaway view of the present utility model.
Element numbers explanation
10 grinding heads
11,21 grinding pads
12 grinding fluid nozzles
13,23 wafers
14,24 bodies
15,25 gas passages
16,26 barrier films
17,27 locating rings
18,28 connecting rods
29 buffing rings
R
1barrier film radius
R
2wafer radius
D
1gap width between locating ring madial wall and wafer edge
R
3buffing ring inside radius
R
4buffing ring outer radius
D
2buffing ring thickness
The specific embodiment
By particular specific embodiment, embodiment of the present utility model is described below, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by the disclosed content of this description.
Refer to Fig. 2.Notice, appended graphic the illustrated structure of this description, ratio, size etc., all contents in order to coordinate description to disclose only, understand and read for person skilled in the art scholar, not in order to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, all should still drop on the technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, in this description, quote as " on ", the term of D score, " left side ", " right side ", " centre " and " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, changing under technology contents, when being also considered as the enforceable category of the utility model without essence.
Refer to Fig. 2, the utility model provides a kind of cmp assembly, and described cmp assembly at least comprises: the grinding pad 21 that is placed with wafer 23 to be ground; Be located on described grinding pad 21 and be enclosed in the buffing ring 29 of described polished wafer 23 peripheries; Be provided with the body 24 of some gas passages 25; Be arranged at the barrier film 26 of described body 24 lower surfaces; Be fixed on described body 24 near one end of wafer 23 to be ground, surround described barrier film 26 and for holding wafer 23 to be ground and being enclosed in the locating ring 27 of the buffing ring 29 of described polished wafer 23 peripheries; Be positioned at the connecting rod 28 of described body 24 away from one end of wafer 23 to be ground.
Described buffing ring 29 is arranged on grinding pad 21, is enclosed in the periphery of wafer 23.Described buffing ring 29 be shaped as annular, its inside radius R
3radius R with wafer 23
2equate its outer radius R
4for the radius R of wafer 23
21.3～1.5 times, its thickness d
2be less than or equal to the thickness of wafer 23.Wafer take diameter as 300mm is example, and recommending the interior diameter of its corresponding buffing ring of design is 300mm, and overall diameter is 400mm, thickness d
2be 8～10mm.In gap between locating ring 27 madial walls and wafer 23 edges, design is enclosed in the buffing ring 29 at the edge of wafer 23, before grinding, within wafer 23 is fixed on buffing ring 29, when grinding, buffing ring 29 has occupied the position that is equivalent to original wafer 23 edges, making really needs the wafer 23 grinding to be positioned at the central authorities of grinding head and barrier film 26, by the adjusting to barrier film 26 pressure, realize the control to whole wafer 23 thickness, be difficult for thereby avoided wafer 23 edge's thickness the problem of controlling.
In the present embodiment, the material of described buffing ring 29 can be selected the material consistent with wafer 23, and for example Si material also can be selected the material consistent with locating ring 27, for example PPS(Ployphenylene Sulfide, polyphenylene sulfide) material.
In described body 24, be provided with some gas passages 25, both can have vacuumized generation negative pressure by described gas passage 25, can lead to again γ-ray emission normal pressure, described normal pressure can be pressed in described wafer 23 and locating ring 27 lapped face of grinding pad 21.
Described barrier film 26 is arranged at the lower surface of body 24, and it act as for adsorbing wafer 23.The radius R of described barrier film 26
1be less than or equal to locating ring 27 inside radius, be more than or equal to the radius R of wafer 23
2, preferably, the radius R of barrier film 26
1be greater than the radius R of wafer 23
2, equal the internal diameter of locating ring 27.Take diameter as 300mm wafer is as example, recommending the diameter of its corresponding barrier film of design is 400mm.The radius R of barrier film 26
1be greater than the radius R of wafer 23
2, this has just guaranteed that wafer 23 is positioned at the central authorities of barrier film 26 in grinding as far as possible, thereby has avoided because of barrier film 26 impacts of rim pressure maldistribution on wafer 23 film thickness monitorings.
Described locating ring 27 be fixed on described body 24 near one end of wafer 23 to be ground, surround described barrier film 26 and for holding wafer 23 to be ground and being enclosed in the buffing ring 29 of described polished wafer 23 peripheries, its overall diameter is identical with the diameter of body 24.
Between the edge of the madial wall of locating ring 27 and wafer 23, be provided with gap, the width d in described gap
1can put buffing ring 29 into for lower limit, and the width d in described gap
1be more than or equal to interior outer radius poor of buffing ring 29.In the present embodiment, preferably, the width d in described gap
1equal the difference R of the interior outer radius of buffing ring 29
4-R
3.
It should be noted that, the face that described locating ring 27 contacts described grinding pad 21 is provided with groove, and described groove is for delivery of lapping liquid.
Be positioned at described, the connecting rod 28 of 24 one end away from wafer 23 to be ground, when described connecting rod 28 rotates, drives described body 24, barrier film 26, locating ring 27 to rotate together with wafer 23, realizes the process of lapping of wafer 23.
In sum, the utility model provides a kind of cmp assembly, and grinding head is designed to large scale grinding head, the radius R of membrane portions
1be more than or equal to the radius R of wafer
2the buffing ring that surrounds polished wafer periphery is set simultaneously on grinding pad, when grinding, buffing ring has occupied the position that is equivalent to original crystal round fringes, making really needs the wafer grinding to be positioned at the central authorities of grinding head and barrier film, by the adjusting to barrier film pressure, realize the control to whole wafer film thickness, be difficult for thereby avoided crystal round fringes place thickness the problem of controlling.So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (8)
1. a cmp assembly, is characterized in that, described cmp assembly comprises:
Be placed with the grinding pad of wafer to be ground;
Be located on described grinding pad and be enclosed in the buffing ring of described polished wafer periphery;
Be provided with the body of some gas passages;
Be arranged at the barrier film of described body lower surface;
Be fixed on described body near one end of wafer to be ground, surround described barrier film and for holding wafer to be ground and being enclosed in the locating ring of the buffing ring of described polished wafer periphery;
Be positioned at the connecting rod of described body away from one end of wafer to be ground.
2. cmp assembly according to claim 1, is characterized in that: the radius R of described barrier film
1be more than or equal to the radius R of wafer
2.
3. cmp assembly according to claim 1, is characterized in that: the radius R of described barrier film
1for 400mm.
4. cmp assembly according to claim 1, is characterized in that: between the madial wall of described locating ring and the edge of described wafer, be provided with gap, the width d in described gap
1be more than or equal to interior outer radius poor of buffing ring.
5. cmp assembly according to claim 1, is characterized in that: the material of described buffing ring is silicon or polyphenylene sulfide.
6. cmp assembly according to claim 1, is characterized in that: the inside radius R of described buffing ring
3with wafer radius R
2equate.
7. cmp assembly according to claim 1, is characterized in that: the outer radius R of described buffing ring
4for wafer radius R
21.3～1.5 times.
8. cmp assembly according to claim 1, is characterized in that: the thickness d of described buffing ring
2be less than or equal to the thickness of wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320835691.8U CN203622170U (en) | 2013-12-17 | 2013-12-17 | Chemical mechanical grinding component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320835691.8U CN203622170U (en) | 2013-12-17 | 2013-12-17 | Chemical mechanical grinding component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203622170U true CN203622170U (en) | 2014-06-04 |
Family
ID=50808688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320835691.8U Expired - Fee Related CN203622170U (en) | 2013-12-17 | 2013-12-17 | Chemical mechanical grinding component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203622170U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104308736A (en) * | 2014-08-27 | 2015-01-28 | 上海华力微电子有限公司 | Defect detection method for membrane of grinding head |
| CN108818294A (en) * | 2018-06-26 | 2018-11-16 | 长江存储科技有限责任公司 | grinding head, grinding system and grinding method |
| CN111168561A (en) * | 2019-12-26 | 2020-05-19 | 西安奕斯伟硅片技术有限公司 | Polishing head and wafer polishing device |
| CN113927472A (en) * | 2020-07-13 | 2022-01-14 | 济南晶正电子科技有限公司 | Device for improving polishing thickness uniformity of wafer |
| CN114147624A (en) * | 2021-11-02 | 2022-03-08 | 北京子牛亦东科技有限公司 | Check ring of grinding head for chemical mechanical grinding equipment |
| CN114473853A (en) * | 2021-12-21 | 2022-05-13 | 北京子牛亦东科技有限公司 | Diaphragm of grinding head for chemical mechanical grinding equipment |
| CN114515995A (en) * | 2022-03-21 | 2022-05-20 | 上海江丰平芯电子科技有限公司 | Wafer polishing head and wafer adsorption method |
| CN115302403A (en) * | 2021-12-16 | 2022-11-08 | 清华大学 | Bearing head for chemical mechanical polishing and polishing equipment |
-
2013
- 2013-12-17 CN CN201320835691.8U patent/CN203622170U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104308736A (en) * | 2014-08-27 | 2015-01-28 | 上海华力微电子有限公司 | Defect detection method for membrane of grinding head |
| CN108818294A (en) * | 2018-06-26 | 2018-11-16 | 长江存储科技有限责任公司 | grinding head, grinding system and grinding method |
| CN111168561A (en) * | 2019-12-26 | 2020-05-19 | 西安奕斯伟硅片技术有限公司 | Polishing head and wafer polishing device |
| CN111168561B (en) * | 2019-12-26 | 2022-05-13 | 西安奕斯伟材料科技有限公司 | Polishing head and wafer polishing device |
| CN113927472A (en) * | 2020-07-13 | 2022-01-14 | 济南晶正电子科技有限公司 | Device for improving polishing thickness uniformity of wafer |
| CN113927472B (en) * | 2020-07-13 | 2022-07-19 | 济南晶正电子科技有限公司 | Device for improving polishing thickness uniformity of wafer |
| CN114147624A (en) * | 2021-11-02 | 2022-03-08 | 北京子牛亦东科技有限公司 | Check ring of grinding head for chemical mechanical grinding equipment |
| CN115302403A (en) * | 2021-12-16 | 2022-11-08 | 清华大学 | Bearing head for chemical mechanical polishing and polishing equipment |
| CN114473853A (en) * | 2021-12-21 | 2022-05-13 | 北京子牛亦东科技有限公司 | Diaphragm of grinding head for chemical mechanical grinding equipment |
| CN114515995A (en) * | 2022-03-21 | 2022-05-20 | 上海江丰平芯电子科技有限公司 | Wafer polishing head and wafer adsorption method |
| CN114515995B (en) * | 2022-03-21 | 2023-12-29 | 上海江丰平芯电子科技有限公司 | Wafer polishing head and wafer adsorption method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140604 Termination date: 20191217 |