CN103182676B - Grinding pad, the lapping device using this grinding pad and Ginding process - Google Patents
Grinding pad, the lapping device using this grinding pad and Ginding process Download PDFInfo
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Abstract
Grinding pad, the lapping device using this grinding pad and Ginding process.A kind of grinding pad, comprises, the first milling zone, is arranged at grinding pad edge, for grinding crystal wafer edge; Second milling zone, described second milling zone at least can hold whole crystal column surface, for grinding whole wafer; Wherein, between the first milling zone of described grinding pad and the second milling zone, there is groove.A kind of lapping device using this grinding pad, comprise grinding table, grinding head and the first conveying device, described wafer is placed on grinding pad, and crystal round fringes is contacted with the first milling zone, keep described grinding table static, spin finishing head is with grinding crystal wafer edge, and the liquid that the first conveying device is sprayed only rests on the first milling zone.The present invention both can grind whole crystal column surface, again can grinding crystal wafer fringe region separately, improve the central area of grinding wafer and the uniformity of fringe region, greatly improved semiconductor devices and produce yield.
Description
Technical field
The present invention relates to semiconductor fabrication process technical field, particularly relate to for the grinding pad of chemical mechanical milling tech, the lapping device using this grinding pad and Ginding process.
Background technology
Cmp (CMP) technique is a kind of technology that can provide the wafer overall situation and local planarization.Chemical mechanical milling tech be widely used in inter-level dielectric, metal level or shallow trench isolation from removal and smooth, become technique important in semiconductor manufacturing.
The mechanism of CMP is: carry out planarizing surface of wafer by the relative motion between wafer and grinding pad under pressure.Fig. 1 is the lapping device grinding crystal wafer schematic diagram of prior art, and when grinding crystal wafer, wafer 7 is fixed on grinding head, and wafer surface to be ground is towards the grinding pad 1 on grinding table 5; Conveying device 8, to grinding pad conveying lapping liquid, contains abrasive grains in described lapping liquid.In process of lapping, crystal column surface material and lapping liquid generation chemical reaction, generate the superficial layer relatively easily removed of one deck, under the effect of abrasive grains, this superficial layer with the relative motion of grinding pad in mechanically ground away.Owing to inevitably producing as grinding byproducts such as particles in attrition process process, grinding pad cleaning device can be set usually above grinding pad, to remove the grinding byproducts such as the particle on grinding pad surface in time.
Existing wafer CMP, can only grind full wafer crystal column surface usually, but integrated along with semiconductor devices, becomes most important to the accurate control of each technique.In semiconductor components and devices manufacture process, at full wafer wafer after CMP grinding, often there is the phenomenon of crystal circle center region and fringe region (non-uniformity) in uneven thickness, and there is grinding residue at crystal round fringes, if this grinding residue is not removed and can contamination grinding device further, therefore, need again to grind to remove this residue to the edge of wafer, and existing CMP device cannot remove separately the grinding residue of crystal round fringes.Such as in GST CMP, GST alloy is IV-V-VI ternary compound, be applied to the very promising material of phase transition storage (PCM), because CMP exists the uneven problem of grinding usually, therefore after cmp, edge more easily produces GST residue, causes GST CMP ratio of defects to improve.According to solving the problems referred to above for the CMP device grinding whole wafer shown in Fig. 1, although the grinding residue of crystal round fringes can be removed, the phenomenon of overmastication can be there is in crystal circle center region.
In addition, in other technique, often complicated than the control of central area to the control in crystal round fringes region.Such as, in the depositing technics of film, therefore, if the film in this region is not removed, easily there is peeling phenomenon in the film poor adherence of fringe region in subsequent technique, thus, needs to remove separately the film of crystal round fringes.Solve the problems referred to above according to existing CMP device, the film of whole wafer can be removed.
The U.S. Patent application being US2011/0171882A1 as publication number discloses a kind of chemical mechanical polishing device, comprise grinding bracing or strutting arrangement, in order to support grinding head when grinding crystal wafer, and keep being horizontal with grinding table, change the bearing height of grinding bracing or strutting arrangement according to degree of grinding in real time, improve the lapping uniformity of semiconductor crystal wafer center and marginal zone.Said method solves district of crystal circle center that prior art exists and the uneven problem of the grinding of marginal zone by improving lapping device, but, lapping device is relatively accurate processing unit (plant), means raising production cost to the improvement of lapping device.
In view of this, need a kind of new chemical mechanical polishing device and use this device to carry out the method for grinding.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of grinding pad, uses the lapping device of this grinding pad and Ginding process, and energy is grinding crystal wafer edge separately, obtains preferably lapping uniformity, improves wafer production yield.
For solving the problems of the technologies described above, first the embodiment of the present invention provides a kind of grinding pad, comprising:
First milling zone, is arranged at grinding pad edge, for grinding crystal wafer edge;
Second milling zone, described second milling zone at least can hold whole wafer, for grinding whole crystal column surface;
Wherein, between the first milling zone of described grinding pad and the second milling zone, there is groove.
Alternatively, described grinding pad has multiple first milling zone.
Alternatively, the profile of described groove is curved.
Alternatively, described groove comprises arc, and the diameter of described arc is 0.5cm ~ 5cm.
Alternatively, the width of described groove is 0.5cm ~ 2cm.
Further embodiment of this invention provides a kind of lapping device comprising above-mentioned grinding pad, and described lapping device also comprises the first conveying device.
Alternatively, described first conveying device can turn to above the first milling zone with to first milling zone surface atomizing of liquids, described first conveying device also can turn to above the second milling zone with to second milling zone surface atomizing of liquids.
Alternatively, described lapping device also comprises the second conveying device, described first conveying device in order to first milling zone surface atomizing of liquids, described second conveying device in order to second milling zone surface atomizing of liquids.
Yet another embodiment of the invention provides a kind of Ginding process applying above-mentioned lapping device, comprising:
There is provided grinding pad, be placed on rotatable grinding table, described grinding pad comprises the first milling zone and the second milling zone, has groove between described first milling zone and the second milling zone;
There is provided wafer, by described wafer load on grinding head;
First conveying device is provided, is placed in above described grinding pad, described first conveying device, liquid required during in order to supply grinding crystal wafer;
When needs grind whole crystal column surface, grinding crystal wafer process comprises: adopt the second milling zone to grind whole crystal column surface, adopts the edge of the first milling zone to wafer to grind;
When only needing grinding crystal wafer edge, the edge of the first milling zone to wafer is adopted to grind.
Alternatively, when grinding whole crystal column surface, jet grinding liquid to the second milling zone.
Alternatively, when only grinding whole crystal round fringes, grinding head rotates, and grinding table keeps static.
Alternatively, when only grinding crystal wafer edge, jet grinding liquid to the first milling zone, sprays deionized water to the second milling zone simultaneously.
Alternatively, after grinding whole crystal column surface and crystal round fringes, jet cleaning liquid cleans to the whole surface of grinding pad.
Alternatively, described first milling zone has multiple, when the first milling zone reaches CMP service life, carries wafer move to another the first milling zone grinding crystal wafer edge by grinding head.
Compared with prior art, the embodiment of the present invention has the following advantages:
The embodiment of the present invention by arranging the first milling zone and the second milling zone that are separated from each other on grinding pad, first milling zone energy grinding crystal wafer edge separately, second milling zone can grind whole crystal column surface, improves the central area of grinding wafer and the uniformity of fringe region;
The embodiment of the present invention is by controlling conveying device jet grinding liquid, when grinding crystal wafer edge time, to the first milling zone jet grinding liquid, spray deionized water to the second milling zone simultaneously, thus when independent grinding crystal wafer edge, can lubrication be played, prevent the second milling zone damage crystal column surface;
The embodiment of the present invention, owing to eliminating the residue of the crystal round fringes caused by grinding inhomogeneities or other technique, improves semiconductor devices and produces yield;
The present invention only improves the structure of grinding pad, does not improve production cost.
Accompanying drawing explanation
Fig. 1 is the lapping device grinding crystal wafer schematic diagram of prior art;
Fig. 2 is the schematic top plan view of the grinding pad of one embodiment of the invention;
Fig. 3 ~ Fig. 6 is one embodiment of the invention grinding pad manufacturing process schematic diagram;
Fig. 7 is the cross-sectional schematic of the lapping device grinding crystal wafer utilizing one embodiment of the invention;
Fig. 8 is the lapping device grinding crystal wafer schematic diagram utilizing one embodiment of the invention grinding pad;
Fig. 9 is the Ginding process schematic flow sheet of the lapping device utilizing one embodiment of the invention.
Detailed description of the invention
Cannot the technical problem at grinding crystal wafer edge separately for solving CMP device that prior art exists, the embodiment of the present invention is improved for existing grinding pad, grinding pad arranges the first milling zone and the second milling zone that are separated from each other, utilize this grinding pad, can solve existing CMP device cannot the technical problem at grinding crystal wafer edge separately.Below with reference to accompanying drawing, embodiment of the present invention is described in detail.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Embodiment one:
For solving the problems of the technologies described above, the invention provides a kind of can the grinding pad at grinding crystal wafer edge separately, according to an embodiment of the present invention, this grinding pad comprises:
First milling zone, is arranged at grinding pad edge, for grinding crystal wafer edge;
Second milling zone, described second milling zone at least can hold whole wafer, for grinding whole crystal column surface;
Wherein, between the first milling zone of described grinding pad and the second milling zone, there is groove.
Fig. 2 is the top view of the grinding pad of one embodiment of the invention.As shown in the figure, grinding pad 1 is provided with multiple first milling zone 11, described first milling zone 11 is arranged at intervals at the edge of grinding pad 1, and around the second milling zone 12 of grinding pad 1, between first milling zone 11 and the second milling zone 12, there is groove 13, and the first milling zone 11 is separated with the second milling zone 12 by groove 13.Described first milling zone 11, second milling zone 12 and groove 13 together constitute the shape of grinding pad 1, and corresponding with the shape of grinding table, are set on grinding table to be aimed at by grinding pad 1.
Although those skilled in the art will be appreciated that in Fig. 2 be provided with 4 the first milling zones, not as limit, and the plurality of first milling zone does not really want uniform intervals arrangement yet, as long as satisfied first milling zone is separated with the second milling zone arranges.
The profile of the described groove 13 between described first milling zone 11, second milling zone 12 is curved.Described groove 13 can be the band of arc, and the band of described arc comprises arc and outer arcuate, and the sidewall near the first milling zone 11 of groove 13 is arc, and the sidewall near the second milling zone 12 of groove 13 is outer arcuate.The diameter of described arc is 0.5cm ~ 5cm.The width of described groove is 0.5cm ~ 2cm.
Elaborate to grinding pad of the present invention below in conjunction with Fig. 3 ~ Fig. 6, Fig. 3 ~ Fig. 6 is the manufacturing process schematic diagram of one embodiment of the invention grinding pad.
There is provided conventional grinding pad 1 in Fig. 3, grinding pad 1 is made up of three-decker, comprises grinding layer 3 from top to bottom, secondary grinding layer 2 and adhesion layer 4.Grinding pad shown in Fig. 3 is double-deck grinding layer structure, but the present invention is not limited thereto, namely grinding layer also can be individual layer or more Rotating fields wherein.Grinding layer 3 contacts with crystal column surface to be ground when grinding, is usually made up of polymeric substrate.Adhesion layer 4 note is attached to the back side of time grinding layer 2, and usually with attachment on adhesion layer 4, to protect adhesion layer 4, this adhesion layer 4 and attachment such as can adopt double faced adhesive tape.During use, the attachment on the adhesion layer 4 of grinding pad 1 is torn, then utilize the effect of sticking together of adhesion layer 4 that grinding pad 1 is attached on grinding table.
Then as shown in Figure 4, trench line L is gone out in grinding pad edge cuts, for grinding pad being arranged for first milling zone at grinding crystal wafer edge, and for grinding the second milling zone of whole crystal column surface.The degree of depth of cutting trench line shown in figure just touches the adhesion layer 4 of grinding pad 1, facilitates the follow-up attachment by adhesion layer 4 to remove from grinding pad so behind.As long as but those skilled in the art will be appreciated that the degree of depth of this trench line meets when the first milling zone grinding crystal wafer edge, the liquid being injected into the first milling zone is intercepted unlikely inflow second milling zone by the groove between this trench line.According to the size (if the first milling zone is for semicircle, being this round diameter length) of first milling zone that will be formed, and according to the groove width that will be formed, grinding pad cuts out trench line L.
It is noted that grinding pad of the present invention not only can grinding crystal wafer edge separately, whole crystal column surface can also be ground, therefore, grinding pad also has the second milling zone except the first milling zone, and described second milling zone at least can hold whole wafer, to grind whole crystal column surface.
As one embodiment of the invention, the profile of described groove 13 can semicircular in shape, and is approximately 0.5cm ~ 5cm near this semicircle diameter of the sidewall of the first milling zone 11.The width of the groove between described trench line is approximately 0.5cm ~ 2cm.Will be appreciated that the surface size according to grinding pad and wafer to be processed, as those skilled in the art, in above-mentioned scope, suitably can adjust the size of the first milling zone and groove width.
It is noted that only define the trench line L of grinding pad part to be removed in Fig. 4, that is, the grinding pad part to be removed between two trench line L is not also removed, that is, grinding pad now still forms entirety on the surface.Such processing, is convenient to grinding pad to adhere on grinding table as a whole, adheres to again, may cause the position misalignment between grinding pad and grinding table if be separated by first, second milling zone after arranging.
Next, as shown in Figure 5, the attachment on the undermost adhesion layer 4 of removing grinding pad, utilizes the effect of sticking together of adhesion layer 4 to be attached on grinding table 5 by grinding pad 1.Because the grinding pad part between trench line L is not yet removed, make grinding pad still can be used as entirety and adhere on grinding table.
Finally, as shown in Figure 6, remove the grinding pad material between trench line L, form groove 13.Like this, grinding pad 1 defines the first milling zone 11 and the second milling zone 12 be separated by groove 13.Described first milling zone 11, second milling zone 12 and groove 13 together constitute the shape of grinding pad 1, and corresponding with the shape of grinding table 5, that is, grinding pad 1 is aimed at and is set on grinding table 5.Certainly, it should be noted that when removing the grinding pad material between trench line L and forming groove as those skilled in the art, the grinding pad surface treatment of groove both sides should be made to obtain enough smooth, to ensure the flatness requirement of grinding wafer.
Embodiment two:
According to another embodiment of the present invention, the invention provides a kind of lapping device comprising above-mentioned grinding pad, this lapping device also comprises the first conveying device.Described grinding pad is arranged on grinding table, and described grinding pad comprises the first milling zone for grinding crystal wafer edge, and for grinding the second milling zone of whole crystal column surface; Between first milling zone of described grinding pad and the second milling zone, there is groove.Described groove does not enter the second milling zone in order to isolate lapping liquid when grinding crystal wafer edge.Further, described first milling zone, the second milling zone and groove form the shape of grinding pad jointly, and corresponding with the shape of described grinding table.
With reference to the sectional view that figure 7, Fig. 7 is embodiment of the present invention lapping device grinding crystal wafer.This lapping device comprises: grinding table 5, for placing grinding pad, described grinding pad comprises the first milling zone 11 for grinding crystal wafer edge, and for grinding the second milling zone 12 of whole crystal column surface, has groove 13 between the first milling zone of described grinding pad and the second milling zone; Grinding head 6, grinds for clamping wafer; Wafer 7 to be ground, is arranged on grinding head 6; And conveying device 8, is arranged on the top of grinding table 5, liquid required during in order to supply grinding crystal wafer 7.
The profile of the described groove 13 between described first milling zone 11, second milling zone 12 is curved.Described groove 13 can be the band of arc, and the band of described arc comprises arc and outer arcuate, and the sidewall near the first milling zone 11 of groove 13 is arc, and the sidewall near the second milling zone 12 of groove 13 is outer arcuate.The diameter of described arc is 0.5cm ~ 5cm.The width of described groove is 0.5cm ~ 2cm.Will be appreciated that the surface size according to grinding pad and wafer to be processed, as those skilled in the art, in above-mentioned scope, suitably can adjust the size of the first milling zone and groove width.
Further, conveying device 8 comprises two transfer passages, carries lapping liquid or cleaning fluid respectively.Lapping liquid comprises planarized required chemical reagent and abrasive grains, becomes thick liquid, be ejected on grinding pad 1 by conveying device after the two mixing.Cleaning fluid grinds byproduct for removing the particle etc. produced in process of lapping, and cleaning fluid can be such as deionized water.
Conveying device 8 supplies lapping liquid or cleaning fluid in a controlled manner respectively.Described controlled mode refers to the needs according to grinding crystal wafer, such as, be independent grinding crystal wafer edge or the needs grinding whole crystal column surface, specifically will elaborate hereinafter.
As one embodiment of the invention, this conveying device can pivotally be arranged on grinding table, in time only needing grinding crystal wafer edge, rotate this conveying device, the liquid outlet of this conveying device is made to be positioned at the top of the first milling zone, in order to the first milling zone atomizing of liquids, and the liquid that conveying device is sprayed is not entered the second milling zone by trench isolations; And when needs grind whole crystal column surface, rotate this conveying device, make the liquid outlet of this conveying device be positioned at the top of the second milling zone of grinding pad, to the second milling zone atomizing of liquids of grinding pad.
As another embodiment of the present invention, two conveying devices can also be set respectively, above the first milling zone that the liquid outlet of these two conveying devices lays respectively at grinding pad and the second milling zone.Wherein, described first conveying device in order to first milling zone surface atomizing of liquids, described second conveying device in order to second milling zone surface atomizing of liquids, first conveying device spray liquid do not entered the second milling zone by trench isolations.
Therefore, utilize the lapping device of grinding pad of the present invention, by controlling conveying device and form the object that the first milling zone can realize independent grinding crystal wafer edge on grinding pad.
Embodiment three:
Below in conjunction with accompanying drawing, the above-mentioned lapping device of use of the present invention is elaborated to the Ginding process that crystal round fringes grinds separately.
According to an embodiment more of the present invention, provide a kind of Ginding process utilizing the lapping device of aforementioned grinding pad.Fig. 9 is the schematic flow sheet that the embodiment of the present invention uses the Ginding process of above-mentioned lapping device.This Ginding process, comprising:
Step S1, provides grinding pad, is placed on rotatable grinding table, and described grinding pad comprises the first milling zone and the second milling zone, has groove between described first milling zone and the second milling zone;
Step S2, provides wafer, by described wafer load on grinding head;
Step S3, provides the first conveying device, is placed in above grinding pad, described first conveying device, liquid required during in order to supply grinding crystal wafer;
Step S4, when needs grind whole crystal column surface, grinding crystal wafer process comprises: adopt the second milling zone to grind whole crystal column surface, then, adopts the edge of the first milling zone to wafer to grind;
Step S5, when only needing grinding crystal wafer edge, adopts the edge of the first milling zone to wafer to grind.
According to the method for the formation grinding pad of aforementioned embodiments, the grinding pad comprising the first milling zone 11 and the second milling zone 12 is arranged on grinding table 5, grinding head 6 carries wafer 7 and rides over downwards on grinding pad, liquid required when conveying device 8 is in order to supply grinding crystal wafer.
Below in conjunction with reference to figure 7 and Fig. 9, Ginding process of the present invention is described in detail.
According to step S1, provide grinding pad, be placed on rotatable grinding table 5.This grinding pad comprises: the first milling zone 11, is arranged at grinding pad edge, for grinding crystal wafer edge; Second milling zone 12, described second milling zone holds whole wafer, for grinding whole crystal column surface; Wherein, the first milling zone of described grinding pad is separated setting with the second milling zone by groove 13.
According to step S2, provide wafer 7, described wafer is arranged on grinding head 6.Because the grinding pad adopted in the present invention has the first milling zone 11 and the second milling zone 12 respectively, therefore, wafer to be ground is according to the needs of grinding, namely, if desired grind whole crystal column surface, then wafer is positioned over the second milling zone 12 (as shown in bold portion in Fig. 7) of grinding pad; If desired independent grinding crystal wafer edge, be then positioned over wafer on grinding pad, and make crystal round fringes be arranged in the first milling zone 11 (as shown in Fig. 7 dotted portion).
Except aforementioned independent grinding crystal wafer edge or the needs grinding whole crystal column surface, when independent grinding crystal wafer edge, also need the needs considering removed crystal round fringes width, also namely crystal round fringes enters the width (width in Fig. 8 folded by two unidirectional arrow) of the first milling zone 11.As one embodiment of the invention, this width can be arranged in advance in grinding operation parameter (recipe), so can control the position of wafer to be ground on grinding pad by controlling the movement of grinding head, with according to required grinding crystal wafer.
According to step S3, provide the first conveying device, be placed in above grinding pad, described first conveying device, liquid required during in order to supply grinding crystal wafer.
According to one embodiment of the invention, conveying device 8 supplies the liquid needed for grinding crystal wafer, can carry lapping liquid or cleaning fluid respectively.Lapping liquid comprises planarized required chemical reagent and abrasive grains.Cleaning fluid can be such as deionized water.
According to step S4, when needs grind whole crystal column surface, adopt the second milling zone 12 to grind whole crystal column surface, adopt the edge of the first milling zone 11 pairs of wafers to grind;
When needs grind whole crystal column surface, wafer 7 is positioned at the second milling zone 12, and spin finishing head 6 and grinding table 5 are to grind whole wafer 7 surface; When grinding whole crystal column surface, to the second milling zone 12 jet grinding liquid.Then, grinding head carries wafer and moves to the first milling zone 11 pairs of crystal round fringes and grind, and after grinding whole crystal column surface, jet cleaning liquid cleans to the whole surface of grinding pad.Will be appreciated that, although above-described embodiment gives first grind whole crystal column surface, then the method at independent grinding crystal wafer edge, as other embodiments of the present invention, also can first independent grinding crystal wafer edge, and then grind whole crystal column surface, thus realize the CMP to whole crystal column surface.
As one embodiment of the invention, can by arranging in grinding operation parameter (recipe) in advance, the position of wafer to be ground on grinding pad is controlled by the movement controlling grinding head, such as, when grinding whole crystal column surface, making wafer only be arranged in the second milling zone and grinding.
According to step S5, when only needing grinding crystal wafer edge, the edge of the first milling zone 11 pairs of wafers is adopted to grind.
When only needing grinding crystal wafer edge, according to crystal round fringes width to be ground, control grinding head moves, the wafer 7 that grinding head 6 is adsorbed enters the first milling zone 11, keep grinding table 5 static, and only drive wafer 7 to rotate with grinding head 6, conveying device 8 is to the first milling zone 11 jet grinding liquid, spray deionized water to the second milling zone 12, with the second milling zone surface of " lubrication " grinding pad simultaneously.After grinding crystal round fringes, jet cleaning liquid cleans to the whole surface of grinding pad.
Why keeping grinding table 5 static, is because crystal round fringes scope to be ground is relatively little, if grinding head 6 and both grinding tables 5 rotate simultaneously, is only positioned at possibly accurately cannot control crystal round fringes to be ground in the first milling zone 11.
Owing to grinding pad 1 being provided with multiple first milling zone 11, when the first milling zone 11 is after grinding after a while, when reaching CMP service life of this first milling zone 11, now carry wafer by grinding head and move to the operation that next first milling zone 11 continues independent grinding crystal wafer edge.
Therefore, from the above, because crystal round fringes to be ground is positioned at the first milling zone, the lapping liquid that conveying device is sprayed also only rests on the first milling zone, under the rotation of grinding head, makes only have crystal round fringes to be polished.When grinding crystal wafer edge, crystal circle center's region most surfaces is positioned at the second milling zone, exist owing to not having lapping liquid at the second milling zone, therefore the central area of wafer can't be polished, and grinding pad not scratch crystal circle center region surface can be ensured by spraying deionized water to the second milling zone, so just achieve independent grinding crystal wafer edge, be unlikely to again the object in overmastication crystal circle center region.Further, due to the setting of groove, not only when independent grinding crystal wafer edge, unnecessary lapping liquid can be intercepted and enters the second milling zone, again can so that the residues such as lapping liquid waste liquid be discharged in time.
When below elaborating independent grinding crystal wafer edge, how conveying device supplies lapping liquid or cleaning fluid in a controlled manner:
When lapping device comprise one pivotally arrange conveying device time, now this conveying device rotatable, the liquid outlet of this conveying device is made to be positioned at the top of the first milling zone of grinding pad, preferably, conveying device liquid outlet sprays towards the contact surface center of crystal round fringes and the first milling zone, and the liquid that conveying device is sprayed is not entered the second milling zone by trench isolations, after cmp, this conveying device jet cleaning liquid, removes the residues such as grinding waste liquid to the surperficial jet cleaning liquid of the first milling zone (also can be whole grinding pad).
When lapping device comprises two conveying devices, the first conveying device liquid outlet is arranged on above the first milling zone, and the second conveying device liquid outlet is arranged on above the second milling zone.During grinding crystal wafer edge, first conveying device work, and the liquid sprayed is not entered the second milling zone by trench isolations, and the second conveying device not jet grinding liquid, but can while grinding crystal wafer edge, continue to spray deionized water, play the effect of " lubrication ", guarantee that crystal circle center region is unlikely to polished pad surface scratches.After cmp, the first and second conveying devices all can jet cleaning liquid, removes the residues such as grinding waste liquid to the surperficial jet cleaning liquid of the first milling zone (also can be whole grinding pad).
That is, no matter which kind of set-up mode is conveying device be, as long as ensure in time only needing grinding crystal wafer edge, lapping liquid only rests on the first milling zone.
When below elaborating the whole crystal column surface of grinding, how conveying device supplies lapping liquid or cleaning fluid in a controlled manner:
When lapping device comprise one pivotally arrange conveying device time, now this conveying device rotatable, the liquid outlet of this conveying device is made to be positioned at the top of the second milling zone of grinding pad, preferably, be positioned at above the second milling zone central area, and conveying device to the second milling zone surface jet grinding liquid to grind whole crystal column surface, after cmp, to the second milling zone (also can be whole grinding pad) surperficial jet cleaning liquid, remove the residues such as grinding waste liquid.
When lapping device comprises two conveying devices, the first conveying device liquid outlet is arranged on above the first milling zone, and the second conveying device liquid outlet is arranged on above the second milling zone.When grinding whole crystal column surface, first conveying device not jet grinding liquid (because its liquid sprayed cannot be entered the second milling zone by trench isolations), and grind whole crystal column surface by the second conveying device jet grinding liquid, after cmp, first and second conveying devices all can jet cleaning liquid, to the second milling zone (also can be whole grinding pad) surperficial jet cleaning liquid, remove the residues such as grinding waste liquid.
In conjunction with the description in aforementioned background art, the application under utilizing grinding pad of the present invention, lapping device and Ginding process thereof can have two kinds of different situations.
Application 1: carry out CMP operation to wafer, solves CMP and grinds uneven problem.
Utilize grinding pad of the present invention, lapping device and Ginding process thereof, first whole crystal column surface is ground: grinding head carries wafer when being positioned at the second milling zone, described grinding table and grinding head all rotate to grind whole crystal column surface, and conveying device is to whole grinding pad surface, or only to the second milling zone jet grinding liquid.When full wafer wafer is after CMP grinding, crystal circle center region and fringe region phenomenon in uneven thickness are there is.
Then, independent grinding crystal wafer edge: grinding head is according to the setting in grinding operation parameter, carry wafer and move to the first milling zone, crystal round fringes is contacted with the first milling zone, stop the rotation grinding table, and grinding head rotates with grinding crystal wafer edge, now, the lapping liquid that conveying device is sprayed cannot be entered the second milling zone by trench isolations, only rests on the first milling zone.
Will be appreciated that, although above-described embodiment gives first grind whole crystal column surface, then the method at independent grinding crystal wafer edge, as other embodiments of the present invention, also can first independent grinding crystal wafer edge, and then grind whole crystal column surface, CMP can be solved equally and grind uneven problem.
In a word, utilize above-mentioned Ginding process, achieve the object at independent grinding crystal wafer edge, solve the non-uniformity problem of CMP grinding, crystal circle center's region transitions grinding can not be made again simultaneously.
Application 2: for the situation needing to carry out the film of crystal round fringes removal separately caused due to other technique.
For above-mentioned situation, unnecessary whole wafer to be ground, only need grinding crystal wafer edge.Utilize Ginding process of the present invention, grinding head carries pending wafer and moves to the first milling zone, crystal round fringes is contacted with the first milling zone, keep grinding table static, and grinding head rotates with grinding crystal wafer edge, now, the liquid that conveying device is sprayed only rests on the first milling zone, achieves the object removing crystal round fringes film.
The present invention by arranging the first milling zone and the second milling zone that are separated from each other on grinding pad, when crystal round fringes is positioned over the first milling zone, by controlling the injection of lapping liquid, making lapping liquid not enter the second milling zone, thus realizing the object at independent grinding crystal wafer edge; And when wafer is positioned at the second milling zone, then still can grind whole crystal column surface.
Therefore, the present invention is by the structure of adjustment grinding pad, what solve that prior art exists can not the technical problem of grinding crystal wafer fringe region separately, achieve and both can grind separately whole crystal column surface, again can grinding crystal wafer fringe region separately, improve the central area of grinding wafer and the uniformity of fringe region; Owing to eliminating the residue (or the grinding residue that causes after CMP grinding, or the thin film residue removed of the need produced in other techniques) of crystal round fringes, semiconductor devices is produced yield and is also greatly improved; And to the improvement of grinding pad, can't production cost be improved.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (13)
1. a grinding pad, is characterized in that, comprising:
First milling zone, is arranged at grinding pad edge, for grinding crystal wafer edge;
Second milling zone, described second milling zone at least can hold whole wafer, for grinding whole crystal column surface;
Wherein, have groove between the first milling zone of described grinding pad and the second milling zone, described groove enters described second milling zone for stoping at the lapping liquid of described first milling zone.
2. grinding pad as claimed in claim 1, it is characterized in that, described grinding pad has multiple first milling zone.
3. grinding pad as claimed in claim 2, it is characterized in that, the profile of described groove is curved.
4. grinding pad as claimed in claim 3, it is characterized in that, described groove comprises arc, and the diameter of described arc is 0.5cm ~ 5cm.
5. grinding pad as claimed in claim 1, it is characterized in that, the width of described groove is 0.5cm ~ 2cm.
6. comprise a lapping device for grinding pad described in any one of Claims 1 to 5, described lapping device also comprises the first conveying device.
7. lapping device as claimed in claim 6, it is characterized in that, described first conveying device can turn to above the first milling zone with to first milling zone surface atomizing of liquids, described first conveying device also can turn to above the second milling zone with to second milling zone surface atomizing of liquids.
8. lapping device as claimed in claim 6, it is characterized in that, described lapping device also comprises the second conveying device, described first conveying device in order to first milling zone surface atomizing of liquids, described second conveying device in order to second milling zone surface atomizing of liquids.
9. a Ginding process, is characterized in that, comprising:
There is provided grinding pad, be placed on rotatable grinding table, described grinding pad comprises the first milling zone and the second milling zone, has groove between described first milling zone and the second milling zone;
There is provided wafer, by described wafer load on grinding head;
First conveying device is provided, is placed in above described grinding pad, described first conveying device, liquid required during in order to supply grinding crystal wafer;
When needs grind whole crystal column surface, grinding crystal wafer process comprises:
Jet grinding liquid to the second milling zone when adopting described second milling zone to grind whole crystal column surface,
Jet cleaning liquid to the second milling zone cleans,
Jet grinding liquid to the first milling zone when adopting the described edge of the first milling zone to wafer to grind, described lapping liquid is limited in described first milling zone by described groove;
When only needing grinding crystal wafer edge, jet grinding liquid to the first milling zone when adopting the edge of the first milling zone to wafer to grind, described lapping liquid is limited in described first milling zone by described groove.
10. Ginding process as claimed in claim 9, is characterized in that, when only grinding whole crystal round fringes, grinding head rotates, and grinding table keeps static.
11. Ginding process as claimed in claim 10, is characterized in that, when only grinding crystal wafer edge, jet grinding liquid to the first milling zone, sprays deionized water to the second milling zone simultaneously.
12. Ginding process as claimed in claim 9, is characterized in that, after grinding whole crystal column surface and crystal round fringes, jet cleaning liquid cleans to the whole surface of grinding pad.
13. Ginding process as claimed in claim 9, it is characterized in that, described first milling zone has multiple, when the first milling zone reaches CMP service life, carries wafer move to another the first milling zone grinding crystal wafer edge by grinding head.
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| CN105619202A (en) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | Chemical mechanical grinding device and chemical mechanical grinding method thereof |
| CN109531404A (en) * | 2018-11-30 | 2019-03-29 | 上海华力微电子有限公司 | A kind of grinding system and grinding method for chemical mechanical grinding |
| CN110842754A (en) * | 2019-11-14 | 2020-02-28 | 西安奕斯伟硅片技术有限公司 | Edge polishing system, edge polishing method and wafer |
| CN112720282B (en) * | 2020-12-31 | 2022-04-08 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN114290231A (en) * | 2021-12-30 | 2022-04-08 | 西安奕斯伟材料科技有限公司 | Polishing apparatus and polishing method |
| CN115488754A (en) * | 2022-09-30 | 2022-12-20 | 上海芯物科技有限公司 | CMP automatic film pasting device and method |
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| CN1186010A (en) * | 1996-12-24 | 1998-07-01 | Lg半导体株式会社 | Chemical mechanical polishing method and apparatus thereof |
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