CN203589021U - 一种360度透光led灯丝 - Google Patents

一种360度透光led灯丝 Download PDF

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CN203589021U
CN203589021U CN201320801193.1U CN201320801193U CN203589021U CN 203589021 U CN203589021 U CN 203589021U CN 201320801193 U CN201320801193 U CN 201320801193U CN 203589021 U CN203589021 U CN 203589021U
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led chip
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贺能
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Huizhou yingjir Lighting Technology Co. Ltd.
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HUIZHOU ENGLED PHOTOELECTRIC TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

本实用新型公开了一种360度透光LED灯丝，它包括透明基板、套装基板的透明外套，透明基板的上下面设有一列或者多列LED芯片，在透明基板两侧设有金属电极，金属电极穿出透明外套，金属电极和透明外套之间密封连接，所述透明基板的上下面均涂覆荧光粉层，相邻LED芯片通过金线串接在一起，LED芯片的间隔为0.5—4mm。本实用新型具有结构简单、组装方便、发光利率高、光照射角度广等优点。

Description

一种360度透光LED灯丝
技术领域
本实用新型涉及LED照明，具体是指一种360度透光LED灯丝。
背景技术
LED 是发光二极管  (LED,Lighting emitted diode的缩写)，它是利用在电场作用下，PN 结 发光的固态发光器件。它具有高寿命、环保、节能的特点，是绿色环保的新光源。现有的LED广泛在家庭、商场、酒店、汽车等诸多邻域应用。
目前的封装器件，主要是两种，一是直插LED，金属支架上固定LED芯片，然后用环氧树脂灌封而成；一种是平面结构封装，将ＬＥＤ芯片固定于平面支架或基板，然后用硅胶或树脂灌封。这两种结构的产品发光角度都小于180度，芯片底部光线全部浪费，侧部光线也有部分损耗。上述两种 LED 芯片的光利用率相当低，特别是未能充分利用 LED 芯片全周发光。
实用新型内容
本实用新型的目的是提供一种结构简单、组装方便、发光利率高、光照射角度广的360度透光LED灯丝。
为了实现上述目的，本实用新型设计出一种360度透光LED灯丝，包括透明基板、套装基板的透明外套，透明基板的上下面设有一列或者多列LED芯片，在透明基板两侧设有金属电极，金属电极穿出透明外套，金属电极和透明外套之间密封连接，所述透明基板的上下面均涂覆荧光粉层，相邻LED芯片通过金线串接在一起，LED芯片的间隔为0.5—4mm。
所述透明基板的上面设有一列LED芯片，在透明基板的上下面均涂覆荧光粉层，相邻LED芯片通过金线串接在一起，LED芯片的间隔为1mm。
所述透明基板的上下面各设有一列LED芯片，在透明基板的上下面均涂覆荧光粉层，相邻LED芯片通过金线串接在一起，LED芯片的间隔为4mm。
所述透明基板为玻璃基板或者环氧树脂基板或者蓝宝石基板或者透明陶瓷基板。
所述透明基板的厚度小于0.5mm。
本实用新型360度透光LED灯丝LED透明灯丝封装，将N颗小功率的LED芯片直接封装在耐高温、高强度透明基板上，采用金线串联导通，并在基板两下面涂覆荧光粉，由于基板很薄，通电点亮后灯丝360°发光。
附图说明：
图1是本实用新型360度透光LED灯丝的主视图；
图2是图1的内部结构示意图；
图3是本实用新型360度透光LED灯丝的立体结构示意图。
具体实施方式
为了便于本领域技术人员的理解，下面将结合具体实施例及附图对本实用新型的结构原理作进一步的详细描述。
如图1-图3所示，一种360度透光LED灯丝，它包括透明基板1、套装基板1的透明外套2，透明基板1的上下面设有一列或者多列LED芯片3，在透明基板1两侧设有金属电极4，金属电极4穿出透明外套2，金属电极4和透明外套2之间密封连接，所述透明基板1的上下面均涂覆荧光粉层5，相邻LED芯片3通过金线6串接在一起，LED芯片3的间隔为0.5—4mm。
如图2所示，所述透明基板1的上面设有一列LED芯片3，在透明基板1的上下面均涂覆荧光粉层5，相邻LED芯片3通过金线串接在一起，LED芯片3的间隔为1mm。为了达到照明高度的要求，可以在透明基板1的上下面各设有一列LED芯片3，在透明基板1的上下面均涂覆荧光粉层5，相邻LED芯片3通过金线串接在一起，LED芯片3的间隔为4mm。
本实用新型360度透光LED灯丝所述透明基板1为玻璃基板或者环氧树脂基板或者蓝宝石基板或者透明陶瓷基板。
本实用新型360度透光LED灯丝所述透明基板1的厚度小于0.5mm。
本实用新型360度透光LED灯丝采用透明超薄材质基板,该透明基板包括但不限于玻璃、环氧树脂、蓝宝石、透明陶瓷等，厚度小于0.5MM，在透明基板上直接固定芯片，芯片间正负电极用导线金线焊接，基板两侧外接电源正负极，在基板正反面均涂覆荧光粉，这样透明基板四周都被荧光粉包裹，ＬＥＤ芯片发出的蓝光光线全方位被荧光粉吸收并激发，使ＬＥＤ出光效率大大提升，并全角度发光，光线更加柔和天然，更接近白炽灯光线，但比白炽灯节能90%。
以上所述，仅为本实用新型的较佳实施例而已，并非对本实用新型作任何形式上的限制；凡本行业的普通技术人员均可按说明书附图所示和以上所述而顺畅地实施本实用新型；但是，凡熟悉本专业的技术人员在不脱离本实用新型技术方案范围内，可利用以上所揭示的技术内容而作出的些许更动、修饰与演变的等同变化，均为本实用新型的等效实施例；同时，凡依据本实用新型的实质技术对以上实施例所作的任何等同变化的更动、修饰与演变等，均仍属于本实用新型的技术方案的保护范围之内。

Claims (5)

1. 一种360度透光LED灯丝，包括透明基板(1)、套装基板（1）的透明外套（2），透明基板(1)的上下面设有一列或者多列LED芯片（3），在透明基板(1)两侧设有金属电极（4），金属电极（4）穿出透明外套（2），金属电极（4）和透明外套（2）之间密封连接，其特征在于：所述透明基板(1)的上下面均涂覆荧光粉层（5），相邻LED芯片（3）通过金线串接在一起，LED芯片（3）的间隔为0.5—4mm。
2.根据权利要求1所述的360度透光LED灯丝，其特征在于：所述透明基板(1)的上面设有一列LED芯片（3），在透明基板(1)的上下面均涂覆荧光粉层（5），相邻LED芯片（3）通过金线串接在一起，LED芯片（3）的间隔为1mm。
3.根据权利要求1所述的360度透光LED灯丝，其特征在于：所述透明基板(1)的上下面各设有一列LED芯片（3），在透明基板(1)的上下面均涂覆荧光粉层（5），相邻LED芯片（3）通过金线串接在一起，LED芯片（3）的间隔为4mm。
4.根据权利要求2或3所述的360度透光LED灯丝，其特征在于：所述透明基板(1)为玻璃基板或者环氧树脂基板或者蓝宝石基板或者透明陶瓷基板。
5.根据权利要求4所述的360度透光LED灯丝，其特征在于：所述透明基板(1)的厚度小于0.5mm。
CN201320801193.1U 2013-12-09 2013-12-09 一种360度透光led灯丝 Expired - Fee Related CN203589021U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104282831A (zh) * 2014-09-24 2015-01-14 惠州市英吉尔光电科技有限公司 一种led封装结构及封装工艺
CN106340580A (zh) * 2016-11-19 2017-01-18 莆田莆阳照明有限公司 一种长寿命led灯

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104282831A (zh) * 2014-09-24 2015-01-14 惠州市英吉尔光电科技有限公司 一种led封装结构及封装工艺
CN106340580A (zh) * 2016-11-19 2017-01-18 莆田莆阳照明有限公司 一种长寿命led灯

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Effective date of registration: 20180209

Address after: Chen Jiang Huifeng Street West three road 516006 in Guangdong province Huizhou City Zhongkai high tech Zone No. 108 A building, third floor

Patentee after: Huizhou yingjir Lighting Technology Co. Ltd.

Address before: 516006 Guangdong province Huizhou City Zhongkai high tech Zone District No. 54 (Building 3)

Patentee before: HUIZHOU ENGLED PHOTOELECTRIC TECHNOLOGY CO., LTD.

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